Insulated Gate Bipolar Transistor (Trench IGBT), 140 A

Transcription

1 Insulated Gate Bipolar Transistor (Trench IGBT), 4 A VS-GT4DA6U PRODUCT SUMMARY SOT-7 V CES 6 V I C DC 4 A at 9 C () V CE(on) typical at A, 5 C.7 V I F DC 7 A at 9 C Speed 8 khz to 3 khz Package SOT-7 Circuit Single switch diode Note () Maximum collector current admitted is A, to do not exceed the maximum temperature of terminals FEATURES Trench IGBT technology with positive temperature coefficient Square RBSOA 3 μs short circuit capability FRED Pt antiparallel diodes with ultrasoft reverse recovery T J maximum = 75 C Fully isolated package Very low internal inductance ( 5 nh typical) Industry standard outline UL approved file E78996 Material categorization: for definitions of compliance please see BENEFITS Designed for increased operating efficiency in power conversion: UPS, SMPS, welding, induction heating Easy to assemble and parallel Direct mounting to heatsink Plug-in compatible with other SOT-7 packages Lower conduction losses and switching losses Low EMI, requires less snubbing ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS Collector to emitter voltage V CES 6 V T C = 5 C Continuous collector current I () C T C = 9 C 4 Pulsed collector current I CM 35 A Clamped inductive load current I LM 35 T C = 5 C 4 Diode continuous forward current I F T C = 9 C 7 Gate-to-emitter voltage V GE ± V T C = 5 C 65 Power dissipation, IGBT P D T C = 9 C 37 W T C = 5 C 38 Power dissipation, diode P D T C = 9 C 35 Isolation voltage V ISOL Any terminal to case, t = min 5 V Note () Maximum collector current admitted is A, to do not exceed the maximum temperature of terminals Revision: 3-May-6 Document Number: 9477 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

2 VS-GT4DA6U ELECTRICAL SPECIFICATIONS (T J = 5 C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Collector to emitter breakdown voltage V BR(CES) V GE = V, I C = 5 μa Collector to emitter voltage V CE(on) V GE = 5 V, I C = A, T J = 5 C -.. V V GE = 5 V, I C = A -.7. V GE = 5 V, I C = A, T J = 75 C V CE = V GE, I C = 5 μa Gate threshold voltage V GE(th) V CE = V GE, I C = 5 μa, T J = 5 C Temperature coefficient of threshold voltage V GE(th) / T J V CE = V GE, I C = ma (5 C to 5 C) mv/ C Collector to emitter leakage current I CES V GE = V, V CE = 6 V -.6 μa V GE = V, V CE = 6 V, T J = 5 C ma V GE = V, V CE = 6 V, T J = 75 C Forward voltage drop, diode V FM I F = 4 A, V GE = V, T J = 5 C V I F = 4 A, V GE = V I F = 4 A, V GE = V, T J = 5 C -. - Gate to emitter leakage current I GES V GE = ± V - - ± na SWITCHING CHARACTERISTICS (T J = 5 C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Turn-on switching loss E on Turn-off switching loss E off mj Total switching loss E tot I C = A, V CC = 36 V, Turn-on delay time t d(on) V GE = 5 V, R g = Rise time t L = 5 μh, T J = 5 C r Energy losses ns Turn-off delay time t d(off) include tail and Fall time t f diode Turn-on switching loss E on recovery Diode used Turn-off switching loss E off 6APH mj Total switching loss E tot I = A, V = 36 V, C CC Turn-on delay time t d(on) V GE = 5 V, R g = Rise time t r L = 5 μh, T J = 5 C Turn-off delay time t d(off) ns Fall time t f - - Reverse bias safe operating area RBSOA T J = 75 C, I C = 35 A, R g = V GE = 5 V to V, V CC = 4 V, V P = 6 V, L = 5 μh Fullsquare Diode reverse recovery time t rr ns Diode reverse recovery current I rr I F = 5 A, di F /dt = A/μs, V R = V A Diode recovery charge Q rr - - nc Diode reverse recovery time t rr ns Diode peak reverse current I rr I F = 5 A, di F /dt = A/μs, V R = V, T J = 5 C A Diode recovery charge Q rr nc Short circuit safe operating area SCSOA T J = 75 C, R g = V GE = 5 V to V, V CC = 4 V, V P = 6 V 3 μs Revision: 3-May-6 Document Number: 9477 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

3 VS-GT4DA6U THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL MIN. TYP. MAX. UNITS Junction and storage temperature range T J, T Stg C Junction to case IGBT R thjc Diode C/W Case to heatsink R thcs Flat, greased surface -. - Weight g Mounting torque Torque to terminal - -. (9.7) Nm (lbf.in) Torque to heatsink (.5) Nm (lbf.in) Case style SOT Allowable Case Temperature ( C) DC Allowable Case Temperature ( C) I C - Continuous Collector Current (A) I F - Continuous Forward Current (A) Fig. - Maximum DC IGBT Collector Current vs. Case Temperature Fig. 3 - Maximum Allowable Forward Current vs. Case Temperature, Diode Leg I C - Collector-to-Emitter Current (A) V GE = 5 V T J = 5 C T J = 5 C T J = 75 C I F - Forward Current (A) 6 T J = 75 C 8 4 T J = 5 C T J = 5 C V CE - Collector-to-Emitter Voltage (V) V F - Forward Voltage Drop Characteristics (V) Fig. - Typical Collector to Emitter Current Output Characteristics of IGBT Fig. 4 - Typical Diode Forward Voltage Drop Characteristics Revision: 3-May-6 3 Document Number: 9477 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

4 VS-GT4DA6U I C - Collector-to-Emitter Current (A) 4 T J = 75 C T J = 5 C T J = 5 C V CE - Collector-to-Emitter Voltage (V) I C = A I C = 75 A I C = 5 A I C = 5 A V GE - Gate-to-Emitter Voltage (V) T J - Junction Temperature ( C) Fig. 5 - Typical IGBT Transfer Characteristics Fig. 8 - Typical IGBT Collector to Emitter Voltage vs. Junction Temperature, V GE = 5 V. I CES - Collector Current (ma).... T J = 75 C T J = 5 C T J = 5 C Switching Energy (mj) E off E on V CES - Collector-to-Emitter Voltage (V) I C - Collector Current (A) Fig. 6 - Typical IGBT Zero Gate Voltage Collector Current Fig. 9 - Typical IGBT Energy Losses vs. I C T J = 5 C, L = 5 μh, V CC = 36 V, R g = 5, V GE = 5 V, Diode used: 6APH6 5 Threshold Voltage (V) V GETH T J = 5 C T J = 5 C Switching Time (μs). t f t r t d(on) t d(off) I C (ma) Fig. 7 - Typical IGBT Threshold Voltage I C - Collector Current (A) Fig. - Typical IGBT Switching Time vs. I C T J = 5 C, L = 5 μh, V CC = 36 V, R g = 5, V GE = 5 V, Diode used: 6APH6 Revision: 3-May-6 4 Document Number: 9477 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

5 VS-GT4DA6U Energy Losses (mj) E on E off t rr (ns) C 5 C V R = V I F = 5 A 4 R g (Ω) di F /dt (A/μs) Fig. - Typical IGBT Energy Loss vs. R g T J = 5 C, I C = A, L = 5 μh, V CC = 36 V, V GE = 5 V, Diode used: 6APH6 Fig. 3 - Typical Reverse Recovery Time vs. di F /dt of Diode Switching Time (μs). t d(on) t d(off) t r t f Q rr (nc) C V R = V I F = 5 A 5 C R g (Ω) Fig. - Typical IGBT Switching Time vs. R g T J = 5 C, L = 5 μh, V CC = 36 V, I C = A, V GE = 5 V, Diode used: 6APH6 di F /dt (A/μs) Fig. 4 - Typical Stored Charge vs. di F /dt of Diode 35 3 V R = V I F = 5 A 5 I RR (A) 5 5 C 5 C 5 di F /dt (A/μs) Fig. 5 - Typical Reverse Recovery Current vs. di F /dt of Diode Revision: 3-May-6 5 Document Number: 9477 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

6 VS-GT4DA6U Z thjc - Thermal Impedance Junction to Case ( C/W). D =.75 D =.5 D =.5 t. D =. t D =.5 D =. Notes: DC. Duty factor D = t /t.. Peak T J = P DM x Z thjc + T C t - Rectangular Pulse Duration (s) Fig. 6 - Maximum Thermal Impedance Z thjc Characteristics, IGBT P DM Z thjc - Thermal Impedance Junction to Case ( C/W).. D =.75 D =.5 D =.5 D =. D =.5 D =. DC Notes:. Duty factor D = t /t.. Peak T J = P DM x Z thjc + T C P DM t t t - Rectangular Pulse Duration (s) Fig. 7 - Maximum Thermal Impedance Z thjc Characteristics, Diode I C (A).. V CE (V) Fig. 8 - IGBT Reverse BIAS SOA, T J = 75 C, V GE = 5 V Revision: 3-May-6 6 Document Number: 9477 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

7 VS-GT4DA6U 5 V V L V C * D.U.T. D.U.T. R = V CC I CM + - V CC R g * Driver same type as D.U.T.; V C = 8 % of V ce(max) * Note: Due to the 5 V power supply, pulse width and inductor will increase to obtain Id 9a - Clamped Inductive Load Test Circuit 9b - Pulsed Collector Current Test Circuit Diode clamp/ D.U.T. L V R g D.U.T./ driver + - V CC a - Switching Loss Test Circuit 9 % 3 % V C 9 % t d(off) I C % 5 % t r t f t d(on) t = 5 µs E on E off E ts = (E on + E off ) b - Switching Loss Waveforms Test Circuit Revision: 3-May-6 7 Document Number: 9477 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

8 VS-GT4DA6U ORDERING INFORMATION TABLE Device code VS- G T 4 D A 6 U product - Insulated Gate Bipolar Transistor (IGBT) - T = trench IGBT Technology - Current rating (4 = 4 A) - Circuit configuration (D = single switch with antiparallel diode) - Package indicator (A = SOT-7) - Voltage rating (6 = 6 V) - Speed/type (U = ultrafast IGBT) CIRCUIT CONFIGURATION CIRCUIT CIRCUIT CONFIGURATION CODE CIRCUIT DRAWING 3 (C) Lead Assignment 4 3 Single switch diode D (G), 4 (E) Dimensions Packaging information LINKS TO RELATED DOCUMENTS Revision: 3-May-6 8 Document Number: 9477 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

9 Outline Dimensions SOT-7 Generation II DIMENSIONS in millimeters (inches) Ø 4. (.6) Ø 4.3 (.69) 38.3 (.58) 37.8 (.488) -A- 4 x M4 nuts.5 (.49) 3. (.5) 6.5 (.46) 6.5 (.56) 5.7 (.) 4.7 (.97) -B (.93) 7.6 (.99) 3.5 (.) 9.8 (.73) 4.9 (.587) 5. (.598) R full. (.83). (.87) 3.5 (.4) 3. (.64) 8.3 (.37) 4 x 7.7 (.33).5 (.) M C A M B M. (.87).9 (.75) 4. (.6) 4.5 (.77) -C-.3 (.5).3 (.484).7 (.46) 5. (.984) 5.5 (.4) Note Controlling dimension: millimeter Revision: -Aug- Document Number: 9543 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

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