Ultra Fast NPT - IGBT

Transcription

1 APT4GR2B2D3 2V, 4A, (on) = 2.V Typical Ultra Fast NPT - IGBT The Ultra Fast NPT - IGBT is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Ultra Fast NPT-IGBT offers superior ruggedness and ultrafast switching speed. TO-247 Features Low Saturation Voltage Low Tail Current RoHS Compliant Short Circuit Withstand Rated High Frequency Switching to KHz Ultra Low Leakage Current Combi (IGBT and Diode) Unless stated otherwise, Microsemi discrete IGBTs contain a single IGBT die. This device is recommended for applicatio such as induction heating (IH), motor control, general purpose inverters and uninterruptible power supplies (UPS). MAXIMUM RATINGS All Ratings: T C unless otherwise specifi ed. Symbol Parameter Ratings Unit V ces Collector Emitter Voltage 2 V Gate-Emitter Voltage ±3 Continuous Collector T C 88 2 Continuous Collector T C = C 4 A M Pulsed Collector Current 6 SCWT Short Circuit Withstand Time: = 6V, = V, T C =2 C μs P D Total Power T C W,T STG Operating and Storage Junction Temperature Range - to C T L Max. Lead Temp. for Soldering:.63" from Case for Sec. 3 STATIC ELECTRICAL CHARACTERISTICS Symbol Parameter Min Typ Max Unit V (BR)CES Collector-Emitter Breakdown Voltage ( = V, =.ma) 2 (TH) Gate Threshold Voltage ( =, = 2.mA, T j ) (ON) Collector-Emitter On Voltage ( = V, = 4A, T j ) Collector-Emitter On Voltage ( = V, = 4A, T j ) 3. Collector-Emitter On Voltage ( = V, = 88A, T j ) 3.2 Volts ES Collector Cut-off Current ( = 2V, = V, T j ) 2 2 μa Collector Cut-off Current ( = 2V, = V, T j ) 2 2 I GES Gate-Emitter Leakage Current ( = ±2V) ±2 na CAUTION: These Devices are Seitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. Microsemi Website Rev A 4-22

2 DYNAMIC CHARACTERISTICS APT4GR2B2D3 Symbol Parameter Test Conditio Min Typ Max Unit C ies Input Capacitance Capacitance 398 C oes Output Capacitance = V, = 2V 32 pf C res Reverse Trafer Capacitance f = MHz 8 P Gate to Emitter Plateau Voltage 7 V Gate Charge 3 Q g Total Gate Charge 2 = V Q ge Gate-Emitter Charge 2 = 6V nc 9 Gate- Collector Charge = 4A Q gc t d(on) t r t d(off) t f 6 Turn-On Delay Time Current Rise Time Turn-Off Delay Time Current Fall Time Turn-On Switching Energy Turn-Off Switching Energy Inductive Switching (2 C) V CC = 6V = V = 4A R G = 4.3 Ω 4 = +2 C t d(on) Turn-On Delay Time Inductive Switching (2 C) 22 t r Current Rise Time V CC = 6V 2 t d(off) Turn-Off Delay Time = V 8 t f Current Fall Time = 4A 47 Turn-On Switching Energy R G = 4.3 Ω Turn-Off Switching Energy = +2 C 86 2 μj μj THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic Min Typ Max Unit R θjc Junction to Case Thermal Resistance (Diode).8 Junction to Case Thermal Resistance (IGBT).2 R θja Junction to Ambient Thermal Resistance 4 W T Package Weight C/W.22 oz 6.2 g Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature. 2 Pulse test: Pulse Width < 38μs, duty cycle < 2%. 3 See Mil-Std-7 Method R G is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC442) is the clamped inductive turn on energy that includes a commutating diode reverse recovery current in the IGBT turn on energy loss. A combi device is used for the clamping diode. 6 is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-. Microsemi reserves the right to change, without notice, the specificatio and information contained herein Rev A 4-22

3 , COLLECTOR CURRENT (A), COLLECTOR-TO-EMITTER VOLTAGE (V), COLLECTOR-TO-EMITTER VOLTAGE (V), DC COLLECTOR CURRENT (A) , COLLECTOR-TO-EMITTER VOLTAGE (V) FIGURE, Output Characteristics ( ). = 8A , Junction Temperature ( C) FIGURE 3, On State Voltage vs Junction Temperature 6. 2μs PULSE TEST <. % DUTY CYCLE , GATE-TO-EMITTER VOLTAGE (V) FIGURE, On State Voltage vs Gate-to-Emitter Voltage = V = - C = 8A = 4A = 2A = C = 4A = 2A = V. 2μs PULSE TEST <. % DUTY CYCLE T C, Case Temperature ( C) FIGURE 7, DC Collector Current vs Case Temperature, COLLECTOR CURRENT (A), COLLECTOR CURRENT (A) V GS(TH), THRESHOLD VOLTAGE (NORMALIZED), GATE-TO-EMITTER VOLTAGE (V) V 3V V μs PULSE TEST<. % DUTY CYCLE APT4GR2B2D3, COLLECTOR-TO-EMITTER VOLTAGE (V) FIGURE 2, Output Characteristics ( ) , GATE-TO-EMITTER VOLTAGE (V) FIGURE 4, Trafer Characteristics = 4A = 24V = 6V 9V = - C , JUNCTION TEMPERATURE FIGURE 6, Threshold Voltage vs Junction Temperature 8V 7V = 96V 6V 2 3 GATE CHARGE (nc) FIGURE 8, Gate charge 2-64 Rev A 4-22

4 .E 8 APT4GR2B2D3 C ies C, CAPACITANCE (pf).e 9.E C oes V CC APT3DQ2 C res A.E 2 3 4, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) FIGURE 9, Capacitance vs Collector-To-Emitter Voltage D.U.T. FIGURE, Inductive Switching Test Circuit T r SWITCHING TIME () T d(on) = 6V, =V, R G = 4.3Ω or 2 C E, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE, Turn-On Time vs Collector Current SWITCHING TIME () T f T d(off) = 6V, =V, R G = 4.3Ω E, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 2, Turn-Off Time vs Collector Current SWITCHING ENERGY LOSS (μj) = 6V, =V, R G = 4.3Ω E, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 3, Energy Loss vs Collector Current SWITCHING ENERGY LOSS (μj) 7 3 = 6V, =V, = 4A R G, GATE RESISTANCE (Ω) FIGURE 4, Energy Loss vs Gate Resistance 2-64 Rev A 4-22 SWITCHING ENERGY LOSSES (μj) = 6V, =V, R G = 4.3Ω = 4A 2 7 2, JUNCTION TEMPERATURE ( C) FIGURE, Energy Losses vs Junction Temperature, COLLECTOR CURRENT (A) μs ms ms ms. 2, COLLECTOR-TO-EMITTER VOLTAGE FIGURE 6, Minimum Switching Safe Operating Area

5 APT4GR2B2D3.3 Z θjc, THERMAL IMPEDANCE ( C/W) D = Duty Factor D = t /t 2 Peak T. SINGLE PULSE J = P DM x Z θjc +T C Rev A 4-22 Note: P DM t t 2 RECTANGULAR PULSE DURATION (SECONDS) Figure 7, Maximum Effective Traient Thermal Impedance, Junction-To-Case vs Pulse Duration

6 APT4GR2B2D3 ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE MAXIMUM RATINGS All Ratings: T C unless otherwise specifi ed. Symbol Characteristic / Test Conditio APT4GR2B2D3 UNIT (AV) (RMS) SM Maximum Average Forward Current (T C = C, Duty Cycle =.) RMS Forward Current (Square wave, % duty) Non-Repetitive Forward Surge Current ( = 4 C, 8.3ms) Amps STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditio MIN TYP MAX UNIT V F Forward Voltage = 3A = 6A = 3A, Volts DYNAMIC CHARACTERISTICS Symbol Characteristic Test Conditio MIN TYP MAX UNIT Reverse Recovery Time = A, di F /dt = -A/μs, = 3V, Reverse Recovery Time I Reverse Recovery Charge F = 3A, di F /dt = -2A/μs = 8V, T C Maximum Reverse Recovery Current nc Amps Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current = 3A, di F /dt = -2A/μs = 8V, T C nc Amps Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current = 3A, di F /dt = -A/μs = 8V, T C nc Amps Rev A 4-22 Z θjc, THERMAL IMPEDANCE ( C/W) D = SINGLE PULSE Duty Factor D = t /t 2 Peak = P DM x Z θjc + T C RECTANGULAR PULSE DURATION (seconds) FIGURE 8. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION Note: P DM t t 2

7 APT4GR2B2D3, REVERSE RECOVERY CHARGE, FORWARD CURRENT (nc) (A) = 8V V F, ANODE-TO-CATHODE VOLTAGE (V) -di F /dt, CURRENT RATE OF CHANGE(A/μs) Figure 9. Forward Current vs. Forward Voltage Figure 2. Reverse Recovery Time vs. Current Rate of Change = 8V = 7 C 6A A = - C 3A, REVERSE RECOVERY CURRENT, REVERSE RECOVERY TIME (A) () = 8V 6A 6A 3A A 3A A di F /dt, CURRENT RATE OF CHANGE (A/μs) -di F /dt, CURRENT RATE OF CHANGE (A/μs) Figure 2. Reverse Recovery Charge vs. Current Rate of Change Figure 22. Reverse Recovery Current vs. Current Rate of Change C J, JUNCTION CAPACITANCE K f, DYNAMIC PARAMETERS (pf) (Normalized to A/μs) Duty cycle =. = 7 C , JUNCTION TEMPERATURE ( C) Case Temperature ( C) Figure 23. Dynamic Parameters vs. Junction Temperature Figure 24. Maximum Average Forward Current vs. CaseTemperature , REVERSE VOLTAGE (V) Figure 2. Junction Capacitance vs. Reverse Voltage (AV) (A) Rev A 4-22

8 Dynamic Characteristics unless otherwise specified APT4GR2B2D3 V r +8V di F /dt Adjus t V D.U.T. 3μH / Waveform PEARSON 2878 CURRENT TRANSFORMER Figure 26. Diode Test Circuit Forward Conduction Current di F /dt - Rate of Diode Current Change Through Zero Crossing. - Maximum Reverse Recovery Current - Reverse Recovery Time measured from zero crossing where diode current goes from positive to negative, to the point at Zer o which the straight line through and.2, passes through zero. - Area Under the Curve Defi ned by and t RR. Figure 27. Diode Reverse Recovery Waveform Definition T-MAX (B2) Package Outline e3 % Sn Plated 4.69 (.8).3 (.29).49 (.9) 2.49 (.98).49 (.6) 6.26 (.64).38 (.22) 6.2 (.244) Collector (Cathode) 2.8 (.89) 2.46 (.84) 4. (.77) Max (.3) 3.2 (.23) 2-64 Rev A (.6).6(.4) 9.8 (.78) 2.32 (.8). (.4).4 (.) 2.2 (.87) 2.9 (.2).4 (.2) BSC 2-Plcs. These dimeio are equal to the TO-247 without the mounting hole. Dimeio in Millimeters and (Inches).6 (.6) 2.3 (.84) Gate Collector (Cathode) Emitter (Anode)