FGL60N100BNTD 1000 V, 60 A NPT Trench IGBT

Transcription

1 FGLNBNTD V, A NPT Trench IGBT Features High Speed Switching Low Saturation Voltage: V CE(sat) =.5 = A High Input Impedance Built-in Fast Recovery Diode Applications UPS, Welder General Description Using Fairchild's proprietary trench design and advanced NPT technology, the V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. This device offers the optimum performance for hard switching application such as UPS, welder applications. G C FGLNBNTD V, A NPT Trench IGBT G C E TO- 3L E Absolute Maximum Ratings Symbol Description Ratings Unit V CES Collector to Emitter Voltage V S Gate to Emitter Voltage 5 V Collector = o C A Collector = 5 o C A M () Pulsed Collector = 5 o C A I F Diode Continuous Forward = o C 5 A P D Maximum Power = 5 o C W Maximum Power = o C 7 W T J Operating Junction Temperature -55 to +5 o C T stg Storage Temperature Range -55 to +5 o C T L Maximum Lead Temp. for soldering Purposes, / from case for 5 seconds 3 o C Notes: : Repetitive rating: Pulse width limited by max. junction temperature Thermal Characteristics Symbol Parameter Ratings Unit R JC (IGBT) Thermal Resistance, Junction to Case.9 o C/W R JC (Diode) Thermal Resistance, Junction to Case. o C/W R JA Thermal Resistance, Junction to Ambient 5 o C/W

2 Package Marking and Ordering Information Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity FGLNBNTD FGLNBNTD TO- Tube N/A N/A 3 Electrical Characteristics of the IGBT = 5 C unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Unit Off Characteristics BV CES Collector to Emitter Breakdown Voltage = V, = ma - - V ES Collector Cut-Off Current V CE = V CES, = V - - ma I GES G-E Leakage Current = S, V CE = V - - ±5 na On Characteristics (th) G-E Threshold Voltage = ma, V CE = V = A, = 5 V -.5. V V CE(sat) Collector to Emitter Saturation Voltage = A, = 5 V, V Dynamic Characteristics C ies Input Capacitance - - pf C oes Output Capacitance V CE = V, = V, f = MHz - - pf C res Reverse Transfer Capacitance - - pf FGLNBNTD V, A NPT Trench IGBT Switching Characteristics t d(on) Turn-On Delay Time - - ns t r Rise Time V CC = V, = A, R G = 5, = 5 V, ns t d(off) Turn-Off Delay Time Inductive Load, = 5 o C ns t f Fall Time ns Q g Total Gate Charge nc Q ge Gate to Emitter Charge V CE = V, = A, = 5 V, = 5 o C nc Q gc Gate to Collector Charge nc Electrical Characteristics of the Diode = 5 C unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max Unit V FM Diode Forward Voltage I F = 5 A -..7 V I F = A -.. V t rr Diode Reverse Recovery Time I F = A, di/dt = A/us -..5 us I R Instantaneous V RRM = V -.5. ua

3 Typical Performance Characteristics Figure. Typical Output Characteristics Figure. Typical Saturation Voltage Characteristics Collector Current, = 5 V 5V V 9V = V 3 5 Figure 3. Saturation Voltage vs. Case Temperature at Variant Current Level 3 =5V Case Temperature, [ ] A A 3A =A V 7V Collector Current, = 5V = 5 = = 5 = 5 3 Figure. Saturation Voltage vs. 3A A A =A = - O C Gate-Emitter Voltage, FGLNBNTD V, A NPT Trench IGBT Figure 5. Saturation Voltage vs. Figure. Saturation Voltage vs. = 5 = 5 3A A A = A 3A A A = A Gate-Emitter Voltage, Gate-Emitter Voltage, 3

4 Typical Performance Characteristics Figure 7. Capacitance Characteristics Capacitance [pf] = V, f = MHz = Figure 9. Switching Characteristics vs. Collector Current V CC =V, Rg=5Ω =± 5V, =5 Cies Coes Cres Figure. Switching Loss vs. Gate Resistance Switching Time [ns] V CC =V, =A =? 5V =5 o C 5 5 Gate Resistance, R G [? ] Tdoff Tdon Tf Figure. Gate Charge Characteristics V CC =V, R L = Ω =5 Tr FGLNBNTD V, A NPT Trench IGBT Switching Time [ns] Tdoff Tf Tr Tdon Gate-Emitter Voltage, Collector Current, Gate Charge, Q g [nc] Figure. SOA Characteristics Figure. Forward Characteristics Collector Current, MAX. (Pulsed) MAX. (Continuous) DC Operation ms us 5us Single Nonrepetitive Pulse = 5 Curve must be darated linearly with increase in temperature. Forward Current, I F = = Forward Voltage, V FM

5 Typical Performance Characteristics Figure 3. Reverse Recovery Characteristics vs. di/dt Reverse Recovery Time, t rr [us] I rr t rr I F =A =5?. di/dt [A/us] Figure 5. Reverse Current vs. Reverse Voltage Reverse Recovery Current I rr Figure. Reverse Recovery Characteristics vs. Forward Current Reverse Recovery Time, t rr [us] Figure. Junction Capacitance 5 t rr I rr Forward Current, I F di/dt=-a/us =5? = 5 Reverse Recovery Current I rr FGLNBNTD V, A NPT Trench IGBT Reverse Current, I R [ua].. = 5 = 5 Capacitance, C j [pf] 5 5 E Reverse Voltage, V R. Reverse Voltage, V R Figure 7.Transient Thermal Impedance of IGBT Thermal Response, Z [ /W] THJC P DM t t E - 3 s in g le p u ls e R e c ta n g u la r P u ls e D u r a t io n [ s e c ] 5

6 Mechanical Dimensions FGLNBNTD V, A NPT Trench IGBT Figure. TO- 3L - 3LD; TO; MOLDED; JEDEC VARIATION AA