AOKS40B65H1/AOTS40B65H1

Transcription

1 AOKS4B5H/AOTS4B5H 5V, 4AAlpha IGBT TM General Description Latest AlphaIGBT (α IGBT) technology 5V breakdown voltage High efficient turn-on di/dt controllability Very high switching speed Low turn-off switching loss and softness Very good EMI behavior Short-circuit ruggedness Product Summary V CE I C (T C = C) 5V 4A V CE(sat) (T J =5 C).9V Applications Power factor correction UPS & Solar Inverters Very High Switching Frequency Applications Welding Machines TO-47 TO- C AOKS4B5H G C E AOTS4B5H E G C G E Orderable Part Number Package Type Form Minimum Order Quantity AOKS4B5H TO47 Tube 4 AOTS4B5H TO Tube Absolute Maximum Ratings T A =5 C unless otherwise noted Parameter Symbol AOKS4B5H/AOTS4B5H Units Collector-Emitter Voltage 5 V Gate-Emitter Voltage Continuous Collector Current Pulsed Collector Current, Limited by T Jmax Turn off SOA, V CE 5V, Limited by T Jmax V CE V GE T C =5 C 8 T C = C Short circuit withstanding time ) V GE = 5V, V CC V, T J 75 C Power Dissipation T C =5 C T C = C I C I CM I LM t SC P D Junction and Storage Temperature Range Maximum lead temperature for soldering T J, T STG -55 to 75 C purpose, /8" from case for 5 seconds Thermal Characteristics T L C Parameter Maximum Junction-to-Ambient Maximum IGBT Junction-to-Case Symbol R θ JA R θ JC AOKS4B5H/AOTS4B5H 4.5 Units C/W C/W ) Allowed number of short circuits: <; time between short circuits: >s. ± 4 A 5 µs 5 V A A W Rev..: April 5 Page of 7

2 Electrical Characteristics (T J =5 C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV CES Collector-Emitter Breakdown Voltage I C =ma, V GE =V, T J =5 C V V CE(sat) T J =5 C T J =5 C -. - T J =75 C -. - V GE(th) Gate-Emitter Threshold Voltage V CE =5V, I C =ma V I CES T J =5 C - - T J =5 C T J =75 C - - I GES Gate-Emitter leakage current V CE =V, V GE =±V - - ± na g FS C ies C oes C res Q g Q ge Q gc I C(SC) R g t D(on) t r t D(off) t f E on E off E total t D(on) t r t D(off) t f E on E off E total Collector-Emitter Saturation Voltage Zero Gate Voltage Collector Current Forward Transconductance DYNAMIC PARAMETERS Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate to Emitter Charge V GE =5V, V CC =5V, I C =4A Gate to Collector Charge Short circuit collector current Gate resistance SWITCHING PARAMETERS, (Load Inductive, T J =5 C) Turn-On DelayTime Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Turn-On Energy Turn-Off Energy Total Switching Energy SWITCHING PARAMETERS, (Load Inductive, T J =75 C) Turn-On DelayTime Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Turn-On Energy Turn-Off Energy Total Switching Energy V GE =5V, I C =4A V CE =5V, V GE =V V CE =V, I C =4A V GE =V, V CC =5V, f=mhz V GE =5V, V CC =V, t sc 5us, T J 75 C V GE =V, V CC =V, f=mhz T J =5 C V GE =5V, V CC =4V, I C =4A, R G =7.5Ω and include diode (AOK4B5H) reverse recovery T J =75 C V GE =5V, V CC =4V, I C =4A, R G =7.5Ω and include diode (AOK4B5H) reverse recovery V µa - - S pf pf pf - - nc nc nc A Ω ns - - ns - - ns ns mj mj mj ns ns ns ns mj mj mj THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev..: April 5 Page of 7

3 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5 7V V 5V V 5 5V 7V V 9 V 9 V 9V 9V V Figure : Output Characteristic (T j =5 C ) V GE = 7V Figure : Output Characteristic (T j =75 C ) V GE =7V 7.5 V CE =V C 5 C V CE(sat) (V) 4.5 I C =8A I C =4A -4 C.5 I C =A 9 5 V GE (V) Figure : Transfer Characteristic Temperature ( C) Figure 4: Collector-Emitter Saturation Voltage vs. Junction Temperature 7 V GE(TH) (V) T J ( C) Figure 5: V GE(TH) vs. T j Rev..: April 5 Page of 7

4 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5 V CE =5V I C =4A C ies V GE (V) 9 Capacitance (pf) C oes C res Q g (nc) Figure : Gate-Charge Characteristics Figure 7: Capacitance Characteristic 5 Power Disspation(W) T CASE ( C) Figure 9: Power Disspation as a Function of Case Current rating 8 4 Switching Time (ns) Td(off) Tf Td(on) Tr T CASE ( C) Figure : Current De-rating T J ( C) Figure : Switching Time vs.t j (V GE =5V,V CE =4V,I C =4A,R g =7.5Ω) Rev..: April 5 Page 4 of 7

5 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS Td(off) Tf Td(on) Tr Td(off) Tf Td(on) Tr Switching Time (ns) Switching Time (ns) Figure : Switching Time vs. I C (T j =75 C,V GE =5V,V CE =4V,R g =7.5Ω) 4 8 R g (Ω) Figure : Switching Time vs. R g (T j =75 C,V GE =5V,V CE =4V,I C =4A) SwitchIng Energy (mj) 4 Switching Energy (mj) Figure 4: Switching Loss vs. I C (T j =75 C,V GE =5V,V CE =4V,R g =7.5Ω) 4 8 R g (Ω) Figure 5: Switching Loss vs. R g (T j =75 C,V GE =5V,V CE =4V,I C =4A) Switching Energy (mj) Switching Energ y (mj) T J ( C) Figure : Switching Loss vs. T j (V GE =5V,V CE =4V,I C =4A,R g =7.5Ω) Figure 7: Switching Loss vs. V CE (T j =75 C,V GE =5V,I C =4A,R g =7.5Ω) Rev..: April 5 Page 5 of 7

6 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS Z θjc Normalized Transient Thermal Resistance.. D=T on /T T J,PK =T C +P DM.Z θjc.r θjc R θjc =.5 C/W Single Pulse In descending order D=.5,.,.,.5,.,., single pulse P DM T on T. E- E Pulse Width (s) Figure 8: Normalized Maximum Transient Thermal Impedance for IGBT Rev..: April 5 Page of 7

7 Figure A: Gate Charge Test Circuit & Waveforms Figure B: Inductive Switching Test Circuit & Waveforms Rev..: April 5 Page 7 of 7