Item Symbol Condition Value Units V C = 25 C 1200 V V C = 25 C ±20

Transcription

1 LUHG121_Preliminary LUHG121Z*_Preliminary SEPT. 29 SUSPM TM 12V A 2-Pack IGBT Module Features Soft punch through IGBT(SPT + IGBT) - Low saturation voltage - Positive temperature coefficient - Fast switching - High ruggedness Free wheeling diodes with fast and soft reverse recovery Indusial standard package with copper base plate 1us short circuit rated Included gate surge protection function Application Welder Power supply Indusial motor drive Induction heating SUSPM1 94 X 34 X 3 mm Absolute Maximum Ratings T C = 25 C unless otherwise noted Item Symbol Condition Value Units V CES C = 25 C 12 V V GES C = 25 C ±2 V I C = 25 C 16 A C C = 8 C A IGBT I CM t p =1ms 2 A T sc j = 125 C, V CC = 6V, V GE = 15V 1 μs T j(max) Maximum chip junction temperature -4 to + 15 C P C = 25 C 5 W D C = 8 C 28 W V RRM C = 25 C 12 V I C = 25 C - A F C = 8 C - A Inverse diode I FRM C = 25 C, t p =1ms - A T j(max) Maximum chip junction temperature -4 to + 15 C P C = 25 C - W D C = 8 C - W T stg Storage junction temperature -4 to +125 C T j(op) Operating junction temperature -4 to +125 C V 1minute 25 V Module Bolt length Recommended Main Terminal bolt length(m5) 8 ~ 12 mm M t Main terminal mounting torque( M5) 2.5 ~ 5. Nm M s Heat sink mounting torque(m6) 3. ~ 5. Nm W Weight 17 g Internal Circuit & Pin Description Pin Number Pin Name Pin Description 1 C2E1 Output 2 E2 Negative dc link ouput 3 C1 Positive dc link ouput 4 G1 Gate input for high-side 5 E1 Emitter input for high-side 6 G2 Gate input for low-side 7 E2 Emitter input for low-side 29 LS Indusial Systems * Option : Zener Diode between Gate and Emitter

2 Elecical Characteristics of IGBT T C = 25 C unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Units Off Characteristics BV CES C-E breakdown voltage V GE = V, I C = 25uA V I CES Collector cut-off current V CE = V CES, V GE = V ma I GES G-E leakage current V GE = V GES, V CE = V na On Characteristics V GE(th) G-E threshold voltage V GE = V CE, I C =ma V Collector to emitter I V C =A, V GE = 15V, T c =25 C V CE(sat) Saturation voltage I C =A, V GE = 15V, T c =125 C V Dynamic Characteristics C ies Input capacitance nf V CE = 25V, V GE = V, C oes Output capacitance nf f = 1MHz, C res Reverse ansfer capacitance nf Switching Characteristics t d(on) Turn-on delay time ns t r Rise time ns,r G =1 ohm t d(off) Turn-off delay time ns L= uh, V CC =6V t f Fall time V GE = ± 15V ns E on Turn-on switching loss Ic=A mj E off Turn-off switching loss mj E ts Total switching loss mj t d(on) Turn-on delay time ns t r Rise time ns t,r G =1 ohm d(off) Turn-off delay time ns L= uh, V CC =6V t f Fall time V GE = ± 15V ns E on Turn-on switching loss Ic=A mj E off Turn-off switching loss mj E ts Total switching loss mj Q g Total gate charge nc Q ge Gate-emitter charge V GE =V ~ +15V nc Q gc Gate-collector charge nc Elecical Characteristics of Inverse Diode T C = 25 C unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Units T C = 25 C V F Diode forward voltage I F =A, V GE =V V T C = 125 C Diode reverse recovery T C = 25 C t rr time ns T C = 125 C Diode peak reverse T C = 25 C I RRM recovery current R G =1 Ohm A T C = 125 C L= uh, V CC =6V Diode reverse recovery T Q V GE = ± 15V, I F =A C = 25 C rr charge uc T C = 125 C Diode reverse recovery T C = 25 C E rr energy mj T C = 125 C LS Indusial Systems * Option : Zener Diode between Gate and Emitter

3 Thermal Characteristics T C = 25 C unless otherwise noted Symbol Parameter Min Typ. Max. Units R th(j-c) Junction-to-case (IGBT part) /W R th(j-c)d Junction-to-case (Diode part) /W 29 LS Indusial Systems * Option : Zener Diode between Gate and Emitter

4 V 18V 16V 15V 14V 12V VGE=1V V 18V 16V 15V 14V 12V VGE=1V Collector-emitter voltage, VCE [V] Fig 1. Typical output characteristics Collector-emitter voltage, VCE [V] Fig 2. Typical output characteristics 4 VGE=15V 4 Collector Current, Ic [A] 3 2 Forward current, IF [A] Collector-Emitter Voltage, VCE [V] Fig 3. Typical ansfer characteristics Forward voltage, VF [V] Fig 4. Typical diode forward characteristics Switching time, t [ns] Tc = 25 C, VCC=6V, RG=1 Ohm L= uh, VGE=± 15V Switching loss, E [mj] Tc = 25 C VCC=6V, RG=1 Ohm L= uh,, VGE=± 15V Fig 5. Typical switching time vs collector current Fig 6. Typical switching loss vs collector current 29 LS Indusial Systems * Option : Zener Diode between Gate and Emitter

5 Switching time, t [ns] , Ic=A, L= uh VCC=6V, VGE=± 15V Switching Loss, E [mj] Ic=A, L= uh Vcc=6V, VGE=± 15V Gate Resistor, RG [ohm] Gate Resistor, RG [ohm] Fig 7. Typical switching time vs gate resistor Fig 8. Typical switching loss vs gate resistor Diode peak reverse recovery current, Irrm [A] Tc = 25 C, VCC=6V, RG=1 Ohm L= uh, VGE=± 15V Diode peak reverse recovery current, Irrm [A] Tc = 25 C VCC=6V, IF=A L= uh, VGE=± 15V Forward current, IF [A] Gate resistor, RG [ohm] Fig 9. Diode peak reverse recovery current vs Forward current Fig 1. Diode peak reverse recovery current vs Gate resistor Case temperature, Tc [ C] Tc vs Ic f vs Ic Vcc=6V, VGE=± 15V 4 RG=1 ohm, Tc=8 C, Duty=5% =Err=mJ, Rth(j-c)=.25 C/W Frequency, f [khz] Fig 11. Case temperature vs collector current Fig 12. Frequency vs collector current 29 LS Indusial Systems * Option : Zener Diode between Gate and Emitter

6 1 Peak power impedance, Zth [ C/W] D=.9 D=.7 D=.5 D=.3 D=.1 D=.5 D=.2 D=.1 D=.5 D= Pulse duration, T [sec] Fig 13. IGBT ansient thermal impedance 29 LS Indusial Systems * Option : Zener Diode between Gate and Emitter

7 Package dimension (dimensions in mm) LS Indusial Systems * Option : Zener Diode between Gate and Emitter