SKM200GAH123DKL 1200V 200A CHOPPER Module August 2011 PRELIMINARY RoHS Compliant
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1 SKM2GAH123DKL 12V 2A CHOPPER Module August 211 PRELIMINARY RoHS Compliant FEATURES Ultra Low Loss High Ruggedness High Short Circuit Capability V CE(sat) With Positive Temperature Coefficient With Fast Free-Wheeling Diodes APPLICATIONS AC and DC motor control AC servo and robot drives Power supplies Welding inverters ABSOLUTE MAXIMUM RATINGS T C =25 C unless otherwise specified Symbol Parameter Test Conditions Values Unit V CES Collector - Emitter Voltage 12 V V GES Gate - Emitter Voltage ±2 V I C DC Collector Current T C =25 C 3 A T C =8 C 2 A I CM Repetitive Peak Collector Current t p =1ms 4 A P tot Power Dissipation Per IGBT 14 W V RRM Repetitive Reverse Voltage 12 V I F(AV) Average Forward Current T C =25 C 3 A T C =8 C 2 A I FRM Repetitive Peak Forward Current t p =1ms 4 A I 2 t T Vj =45 C, t=1ms, V R =V A 2 s Reverse-Diode V RRM Repetitive Reverse Voltage 12 V I F(AV) Average Forward Current T C =25 C 45 A T C =8 C 3 A I FRM Repetitive Peak Forward Current t p =1ms 6 A I 2 t T Vj =45 C, t=1ms, V R =V 45 A 2 s MacMic Science & Technology Co., Ltd. Version: 1 Add:#18, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Province, P. R.of China Tel.: Fax: Post Code:21322 Website:
2 ELECTRICAL AND THERMAL CHARACTERISTICS SKM2GAH123DKL T C =25 C unless otherwise specified Symbol Parameter Test Conditions Min. Typ. Max. Unit V GE(th) Gate - Emitter Threshold Voltage V CE =V GE, I C =8mA V V CE(sat) I CES Collector - Emitter Saturation Voltage Collector Leakage Current I C =2A, V GE =15V, 1.8 V I C =2A, V GE =15V, 2. V V CE =12V, V GE =V, 1 ma V CE =12V, V GE =V, 1 ma I GES Gate Leakage Current V CE =V,V GE ±15V, -4 4 na Q ge Gate Charge V CE =6V, I C =2A, V GE =±15V 2.1 µc C ies Input Capacitance 14.9 nf V CE =25V, V GE =V, f =1MHz C res Reverse Transfer Capacitance.7 nf t d(on) Turn - on Delay Time V CC =6V,I C =2A, R G =5.1Ω, 13 ns 14 ns t r Rise Time V GE =±15V, Inductive Load 65 ns 65 ns t d(off) Turn - off Delay Time V CC =6V,I C =2A, R G =5.1Ω, 43 ns 5 ns t f Fall Time V GE =±15V, Inductive Load 65 ns 8 ns E on Turn - on Energy V CC =6V,I C =2A, R G =5.1Ω, 17.2 mj 24.8 mj E off Turn - off Energy V GE =±15V, Inductive Load 13.6 mj 21.6 mj I SC Short Circuit Current t psc 1µS, V GE =15V, T Vj =15 C V CC =9V, V CEMCHIP 12V 9 A R thjc Junction-to-Case Thermal Resistance ( Per IGBT).12 K /W V F Forward Voltage I F =2A, V GE =V, 1.95 V I F =2A, V GE =V, 1.95 V I RRM Max. Reverse Recovery Current I F =2A, V R =6V 155 A Q rr Reverse Recovery Charge di F /dt=-24a/μs 17.5 µc E rec Reverse Recovery Energy 8.5 mj R thjcd Junction-to-Case Thermal Resistance ( Per Diode).25 K /W Reverse-Diode V F Forward Voltage I F =3A, V GE =V, 1.53 V I F =3A, V GE =V, 1.52 V I RRM Max. Reverse Recovery Current I F =3A, V R =6V 6 A Q rr Reverse Recovery Charge di F /dt=-1a/μs, 5.5 µc R thjcd Junction-to-Case Thermal Resistance ( Per Diode) 1. K /W - 2 -
3 MODULE CHARACTERISTICS SKM2GAH123DKL T C =25 C unless otherwise specified Symbol Parameter Test Conditions Min. Typ. Max. Unit T Vj max Max. Junction Temperature 15 C T Vj op Operating Temperature C T stg Storage Temperature C V isol Insulation Test Voltage AC, t=1min 3 V M d Mounting Torque Recommended(M6) 3 5 N m Weight 3 g 4 V GE =15V IC (A) IC (A) Figure1. Typical Output characteristics Figure2. Typical Output characteristics 4 32 V CE =2V 8 6 V CC =6V I C =2A V GE =±15V IC (A) Eon Eoff (mj) 4 E on 8 2 E off V GE (V) Figure3. Typical Transfer characteristics R G (Ω) Figure4. Switching Energy vs. Gate Resistor - 3 -
4 SKM2GAH123DKL 1 8 V CC =6V R G =5.1Ω V GE =±15V 1 C ies V GE =V f=1mhz Eon Eoff (mj) E on E off C (nf) 1 1 C res C oes I C (A) Figure5. Switching Energy vs. Collector Current Figure6. Typical Capacitances vs. V CE 15 V CC =6V VGE (V) V CC =8V I C =2A Q g (nc) Figure7. Gate Charge characteristics ICpuls (A) V GE =15V Figure8. Reverse Biased Safe Operating Area 25 2 R G =5.1Ω V CE =6V IF (A) 2 1 Erec (mj) V F (V) Figure9. Diode Forward Characteristics I F (A) Figure1. Switching Energy vs. I F 4-4 -
5 SKM2GAH123DKL IF (A) 3 2 ZthJC (K/W) V F (V) Figure11. Diode Forward Characteristics Reverse-Diode Rectangular Pulse Duration (seconds) Figure12. Transient Thermal Impedance Figure13. Circuit Diagram - 5 -
6 SKM2GAH123DKL Dimensions (mm) Figure14. Package Outline - 6 -
Symbol Parameters Test Conditions Min Typ Max Unit R thjc. Per IGBT 0.09 K/W R thjcd
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UNISONIC TECHNOLOGIES CO., LTD 600V, SMPS N-CHANNEL IGBT DESCRIPTION The UTC is a N-channel IGBT. it uses UTC s advanced technology to provide customers with high input impedance, high switching speed
EMIPAK-2B PressFit Power Module 3-Levels Half-Bridge Inverter Stage, 150 A
EMIPAK-B PressFit Power Module -Levels Half-Bridge Inverter Stage, 5 A VS-ETF5Y65U EMIPAK-B (package example) PRODUCT SUMMARY Q - Q IGBT STAGE V CES 65 V V CE(ON) typical at I C = A.7 V Q - Q IGBT STAGE
Silicon FS Trench IGBT BT40T60 ANFU
Silicon FS Trench IGBT BT40T60 ANFU General Description: Using HUAJING's proprietary trench design and advanced Field Stop (FS) technology, offering superior conduction and switching performances. V CES
Dual INT-A-PAK Low Profile 3-Level Half Bridge Inverter Stage, 300 A
VS-GT3FD6N Dual INT-A-PAK Low Profile 3-Level Half Bridge Inverter Stage, 3 A FEATURES Trench plus Field Stop IGBT technology FRED Pt antiparallel and clamping diodes Short circuit capability Low stray
MPMD200B120RH NPT & Rugged Type 1200V IGBT Module. Features. conditioning. Applications. total losses. Equivalent Circuit 7DM-3. Welding Machine, UPS
General Description MagnaChip s IGBT Module 7DM-3 package devices are optimized to reduce losses and switching noise in high frequency power conditioning electrical systems. These IGBT Module series are
MBQ60T65PES High Speed Fieldstop Trench IGBT Second Generation
General Description This IGBT is produced using advanced MagnaChip s Field Stop Trench IGBT 2 nd Generation Technology, which is not only the highest efficiency capable of switching behavior, but also
EMIPAK 2B PressFit Power Module 3-Levels Half Bridge Inverter Stage, 150 A
EMIPAK B PressFit Power Module -Levels Half Bridge Inverter Stage, 5 A VS-ETF5Y5N EMIPAK-B (package example) PRIMARY CHARACTERISTICS Q to Q IGBT V CES 5 V V CE(on) typical at I C = 5 A.7 V I C at T C =
V CE I C (T C =100 C) V CE(sat) (T C =25 C) 2.0V. Symbol
AOKS3BD V, 3A Alpha IGBT TM General Description Latest Alpha IGBT (α IGBT) technology High efficient turn-on di/dt controllability Very high switching speed Low turn-off switching loss and softness Very
Data Sheet GHIS030A120S-A2
Buck Chopper with Field Stop Trench IGBT + SiC SBD V CES =1200V I C = 30A @T C = 100 0 C E A G C Features Field StopTrench Fast IGBT - Low voltage drop - Low tail current - Switching frequency up to 50
EMIPAK 2B PressFit Power Module 3-Levels Half Bridge Inverter Stage, 75 A
EMIPAK B PressFit Power Module -Levels Half Bridge Inverter Stage, 75 A VS-ETF75Y6U EMIPAK B (package example) PRIMARY CHARACTERISTICS Q - Q IGBT STAGE V CES 6 V V CE(on) typical at I C = 75 A.7 V I C
MTP IGBT Power Module Primary Dual Forward
MTP IGBT Power Module Primary Dual Forward VS5MTWDF MTP (Package example) PRIMARY CHARACTERISTICS IGBT, T J = 5 C V CES V V CE(on) at 25 C at 8 A 2. V I C at 8 C 9 A FRED Pt AP DIODE, T J = 5 C V RRM V
n-channel D 2 Pak 1
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features High short circuit rating optimized for motor control, t sc =µs, @360V V CE (start),, V GE = 5V Combines low conduction losses
T C = 25 C 400 T C = 80 C 300 A
APTGT3A17D3G Phase leg Trench + Field Stop IGBT3 Power Module CES = 17 I C = 3A @ Tc = 8 C 4 Q1 3 Application Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control
RGTV00TS65D 650V 50A Field Stop Trench IGBT
RGTVTS65D 65V 5A Field Stop Trench IGBT Outline V CES 65V TO-247N I C( C) 5A V CE(sat) (Typ.).5V P D 276W ()(2)(3) Features Inner Circuit ) Low Collector - Emitter Saturation Voltage (2) 2) High Speed
V (4TYP) U (5TYP) V 0.28 Dia. 7.0 Dia.
QIC68 Preliminary Powerex, Inc., 73 Pavilion Lane, Youngwood, Pennsylvania 697 (724) 9-7272 www.pwrx.com Dual Common Emitter HVIGBT Module 8 Amperes/6 Volts S NUTS (3TYP) F A D F J (2TYP) C N 7 8 H B E
Features. n-channel TO-247AC. 1
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features UltraFast: Optimized for high operating frequencies up to 4 khz in hard switching, >2 khz in resonant mode New IGBT design
High Power Rugged Type IGBT Module
ug. 29 High Power Rugged Type IGBT Module Description DWIN S IGBT 7DM3 Package devices are optimized to reduce losses and switching noise in high frequency power conditioning electrical systems. These
650V, 40A Field Stop Trench IGBT
FGHT65SPD-F5 65V, A Field Stop Trench IGBT Features AEC-Q Qualified Low Saturation Voltage : V CE(sat) =.5 V(Typ.) @ I C = A % of the parts are dynamically tested (Note ) Short Circuit Ruggedness > 5 μs
RGS00TS65D 650V 50A Field Stop Trench IGBT
RGSTS65D 65V 5A Field Stop Trench IGBT Outline V CES 65V TO-247N I C( C) 5A V CE(sat) (Typ.).65V P D 326W () (2) (3) Features Inner Circuit ) Low Collector - Emitter Saturation Voltage (2) 2) Short Circuit
Half Bridge IGBT Power Module, 600 V, 100 A
Half Bridge IGBT Power Module, 6 V, A VS-GTTP6N PRODUCT SUMMARY V CES I C at T C = 8 C V CE(on) (typical) at I C = A, 5 C Speed Package Circuit INT-A-PAK 6 V A.65 V 8 khz to 3 khz INT-A-PAK Half bridge
MPMD100B120RH NPT & Rugged Type 1200V IGBT Module. Features. conditioning. Applications. total losses. Equivalent Circuit 7DM-3. Welding Machine, UPS
General Description MagnaChip s IGBT Module 7DM3 package devices are optimized to reduce losses and switching noise in high frequency power conditioning electrical systems. These IGBT Module series are
5SND 0500N HiPak IGBT Module
Data Sheet, Doc. No. 5SYA 433-2-23 5SND 5N333 HiPak IGBT Module V CE = 33 V I C = 5 A Ultra low-loss, rugged SPT+ chip-set Smooth switching SPT+ chip-set for good EMC AlSiC base-plate for high power cycling
MIDA-HB12FA-600N IGBT module datasheet
Low Inductance IGBT Module with 17 mm Height Housing 1 V A Chip features IGBT chip o Trench FS V-Series IGBT (Fuji 6 th gen) o low VCE(sat) value o µs short circuit duration at 15 C o square RBSOA of 2xIC
Primary MTP IGBT Power Module
Primary MTP IGBT Power Module MTP PRIMARY CHARACTERISTICS FRED Pt AP DIODE, T J = 5 C V RRM 6 V I F(DC) at C A V F at 25 C at 6 A 2.8 V IGBT, T J = 5 C V CES 6 V V CE(on) at 25 C at 6 A.98 V I C at C 83
Industry standard 62mm IGBT module. IGBT chip. o Trench FS V-Series IGBT (Fuji 6 th gen) o low VCE(sat) value o 10 µs short circuit of 150 C
Industry standard 62mm IGBT module MIAA-HB12FA-3N 12 V 3 A Chip features IGBT chip o Trench FS V-Series IGBT (Fuji 6 th gen) o low VCE(sat) value o 1 µs short circuit of 15 C o square RBSOA of 2xIC o low
Insulated Gate Bipolar Transistor (Ultrafast IGBT), 100 A
Insulated Gate Bipolar Transistor (Ultrafast IGBT), A SOT-7 PRIMARY CHARACTERISTICS V CES V I C DC A at 8 C V CE(on) typical at A, 5 C.93 V Speed 8 khz to 3 khz Package SOT-7 Circuit configuration Single
IGBT ECONO3 Module, 150 A
IGBT ECONO3 Module, 5 A VS-GB5YG2NT ECONO3 4 pack FEATURES Gen 5 non punch through (NPT) technology μs short circuit capability Square RBSOA HEXFRED low Q rr, low switching energy Positive temperature