V (4TYP) U (5TYP) V 0.28 Dia. 7.0 Dia.
|
|
- Victor Jeffrey Webster
- 5 years ago
- Views:
Transcription
1 QIC68 Preliminary Powerex, Inc., 73 Pavilion Lane, Youngwood, Pennsylvania 697 (724) Dual Common Emitter HVIGBT Module 8 Amperes/6 Volts S NUTS (3TYP) F A D F J (2TYP) C N 7 8 H B E M H 4 V (4TYP) G (3TYP) R (DEEP) T (SCREWING DEPTH) (NC) 4 K (3TYP) L (2TYP) U (TYP) Q P Description: Powerex HVIGBTs feature highly insulating housings that offer enhanced protection by means of greater creepage and strike clearance distance for many demanding applications like medium voltage drives and auxiliary traction applications Outline Drawing and Circuit Diagram Dimensions Inches Millimeters A. 4. B C D 4.88±. 24.±. E 2.24±. 7.±. F.8 3. G.43. H J Dimensions Inches Millimeters L.69±. 7.±. M N.2. P.22. Q R.6 4. S M6 Metric M6 T.63 Min. 6. Min. U. x x. Features: -4 to C Extended Temperature Range % Dynamic Tested % Partial Discharge Tested Advanced Mitsubishi R-Series Chip Technology Aluminum Nitride (AlN) Ceramic Substrate for Low Thermal Impedance Complementary Line-up in Expanding Current Ranges to Mitsubishi HVIGBT Power Modules Copper Baseplate Creepage and Clearance Meet IEC 677- Rugged SWSOA and RRSOA K V.28 Dia. 7. Dia. Applications: High Voltage Power Supplies Medium Voltage Drives Motor Drives Traction
2 QIC68 8 Amperes/6 Volts Absolute Maximum Ratings, T j = C unless otherwise specified Ratings Symbol QIC68 Units Junction Temperature T j -4 to + C Storage Temperature T stg -4 to + C Collector-Emitter Voltage (V GE = V) V CES T j = -4 C 8 Volts T j = + C 63 Volts T j = + C 6 Volts Gate-Emitter Voltage (V CE = V) V GES ±2 Volts Collector Current (T C = C) I C 8 Amperes Peak Collector Current (Pulse) I CM 7 *2 Amperes Diode Forward Current (T C = 2 C) * I F 8 Amperes Diode Forward Surge Current (Pulse) * I FM 7 *2 Amperes Maximum Collector Dissipation P C Watts (T C = C, IGBT Part, T j(max) C) Mounting Torque, M6 Terminal Screws 44 in-lb Mounting Torque, M6 Mounting Screws 44 in-lb Module Weight (Typical) 9 Grams Isolation Voltage (Charged Part to Baseplate, AC 6Hz min.) V iso 9. kvolts Partial Discharge Q pd pc (V = 69 V RMS, V2 = 2 V RMS, f = 6Hz (Acc. to IEC 287)) Maximum Short-Circuit Pulse Width, t psc µs (V CC 4V, V GE = ±V, ) Electrical Characteristics, T j = C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Collector-Cutoff Current I CES V CE = V CES, V GE = V, 3 ma V CE = V CES, V GE = V, 3 ma Gate Leakage Current I GES V GE = V GES, V CE = V. µa Gate-Emitter Threshold Voltage V GE(th) I C = 3mA, V CE = V Volts Collector-Emitter Saturation Voltage V CE(sat) I C = 8A, V GE = V, 3.8 *3 Volts I C = 8A, V GE = V, Volts Total Gate Charge Q G V CC = 36V, I C = 8A, V GE = V. µc Emitter-Collector Voltage * V EC I E = 8A, V GE = V, 3.3 Volts * Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). *2 Pulse width and repetition rate should be such that device junction temperature (T j ) does not exceed T j(max) rating. *3 Pulse width and repetition rate should be such that device junction temperature rise is negligible. I E = 8A, V GE = V, Volts 2
3 QIC68 8 Amperes/6 Volts Electrical Characteristics, T j = C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Input Capacitance C ies nf Output Capacitance C oes V GE = V, V CE = V.9 nf Reverse Transfer Capacitance C res f = khz.44 nf Resistive Turn-on Delay Time t d(on) V CC = 36V, I C = 8A, TBD µs Load Rise Time t r V GE = ±V, TBD µs Switching Turn-off Delay Time t d(off) R G(on) = 3Ω, R G(off) = 3Ω, TBD µs Times Fall Time t f Inductive Load TBD µs Turn-on Switching Energy E on, I C = 8A, V GE = ±V, 46 mj Turn-off Switching Energy E off R G(on) = 3Ω, R G(off) = 3Ω, mj V CC = 36V, Inductive Load Diode Reverse Recovery Time * t rr V CC = 36V, I E = 8A,.7 µs Diode Reverse Recovery Charge * Q rr V GE = ±V, R G(on) = 3Ω, *3 µc Diode Reverse Recovery Energy E rec Inductive Load, 2 mj Stray Inductance (C-E2) L SCE 6 nh Lead Resistance Terminal-Chip R CE.8 mω Thermal and Mechanical Characteristics, T j = C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Thermal Resistance, Junction to Case *4 R th(j-c) Q Per IGBT. C/W Thermal Resistance, Junction to Case *4 R th(j-c) D Per FWDi. C/W Contact Thermal Resistance, Case to Fin R th(c-f) Per Module,.8 C/W Thermal Grease Applied, λ grease = W/mK Comparative Tracking Index CTI 6 Clearance Distance in Air d a(t-t) 9 mm (Terminal to Terminal) Creepage Distance Along Surface d s(t-t) 4 mm (Terminal to Terminal) * Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). *3 Pulse width and repetition rate should be such that device junction temperature rise is negligible. *4 T C measurement point is just under the chips. 3
4 QIC68 8 Amperes/6 Volts OUTPUT CHARACTERISTICS TRANSFER CHARACTERISTICS COLLECTOR CURRENT, I C, (AMPERES) COLLECTOR CURRENT, I C, (AMPERES) COLLECTOR-EMITTER VOLTAGE, V CE, (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS V GE = V T j = C V GE = V 3 COLLECTOR CURRENT, I C, (AMPERES) EMITTER CURRENT, I E, (AMPERES) V CE = V GE GATE-EMITTER VOLTAGE, V GE, (VOLTS) FREE-WHEEL DIODE FORWARD CHARACTERISTICS TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE, V CE(sat), (VOLTS)) EMITTER-COLLECTOR VOLTAGE, V EC, (VOLTS) 4
5 QIC68 8 Amperes/6 Volts CAPACITANCE CHARACTERISTICS GATE CHARGE CHARACTERISTICS CAPACITANCE, C ies, C oes, C res, (nf). V GE = V f = khz C ies C oes C res GATE EMITTER VOLTAGE, V GE, (VOLTS) V CE = 36V I C = 8A... COLLECTOR-EMITTER VOLTAGE, V CE, (VOLTS) GATE CHARGE, Q G, (μc).2 SWITCHING ENERGIES, E on, E off, E rec, (J) ENERGY CHARACTERISTICS V CC = 36V, V GE = ±V, R G(on) = 3Ω, R G(off) = 3Ω, L S = nh, Inductive Load E on E off E rec SWITCHING ENERGIES, E on, E rec, (J) ENERGY CHARACTERISTICS V CC = 36V, I C = 8A, V GE = ±V, L S = nh,, Inductive Load E on E rec COLLECTOR CURRENT, I C, (AMPERES) GATE RESISTOR, R G, (Ohm)
6 QIC68 8 Amperes/6 Volts SWITCHING ENERGIES, E off, (J) REVERSE RECOVERY TIME, t rr, (μs) ENERGY CHARACTERISTICS V CC = 36V, I C = 8A, V GE = ±V, L S = nh,, Inductive Load E off FREE-WHEEL DIODE REVERSE RECOVERY t rr I rr GATE RESISTOR, R G, (Ohm) V CC = 36V, V GE = ±V, R G(on) = 3Ω, L S = nh,, Inductive Load EMITTER CURRENT, I E, (AMPERES). REVERSE RECOVERY CURRENT, I rr, (AMPERES) COLLECTOR CURRENT, I C, (AMPERES) SWITCHING TIMES, (μs) TIME CHARACTERISTICS V CC = 36V, V GE = ±V, R G(on) = 3Ω, R G(off) = 3Ω, L S = nh,, Inductive Load TBD. COLLECTOR CURRENT, I C, (AMPERES) REVERSE BIAS SAFE OPERATING AREA (RBSOA) V CC 4V, V GE = ±V, R G(off) = 3Ω, COLLECTOR-EMITTER VOLTAGE, V CE, (VOLTS) 6
7 QIC68 8 Amperes/6 Volts REVERSE RECOVERY CURRENT, I rr, (AMPERES) FREE-WHEEL DIODE REVERSE RECOVERY SAFE OPERATING AREA (RRSOA) V CC 4V, di/dt < A/μs, EMITTER-COLLECTOR VOLTAGE, V EC, (VOLTS) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c').2..8 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS.6 Per Unit Base = R th(j-c) =.4. C/W (IGBT) R th(j-c) =.2. C//W (FWDi).... TIME, (s) 7
QID Dual IGBT HVIGBT Module 85 Amperes/6500 Volts
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com Dual IGBT HVIGBT Module Description: Powerex HVIGBTs feature highly insulating housings that offer enhanced protection
More informationC N V (4TYP) U (5TYP) QIF (Common Collector)
QI_ Powerex, Inc., Pavilion Lane, Youngwood, Pennsylvania 9 () 9- www.pwrx.com Dual H Module mperes/ olts S NUTS (TYP) F D F J (TYP) C N H B E M H (TYP) G (TYP) R (DEEP) T (SCREWING DEPTH) (NC) K (TYP)
More informationQRD Preliminary. High Voltage Diode Module 200 Amperes/3300 Volts
QRD3324 Preliminary Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com High Voltage Diode Module 2 Amperes/33 Volts L NUTS (3TYP) F A D F C J 7 8 B E H 1 2 3 4
More informationS R V U T DETAIL "A" AF AE E1C2 (33) E1C2 (32) Dimensions Inches Millimeters
CM6DXL-24S Powerex, Inc., 73 Pavilion Lane, Youngwood, Pennsylvania 5697 (724) 925-7272 www.pwrx.com Dual IGBTMOD NX-S Series Module D AC K E AB L F R Y Z AA Z AD G H C() C(2) E2(3) E2(4) A B C J K L D
More informationCM600YE2N-12F / CM600YE2P-12F TLI-Series (Three Level Inverter) IGBT 600 Amperes/600 Volts
CM6YN-12F / CM6YP-12F TLI-Series (Three Level Inverter) IGBT P V Q W Q V R P S J Y, Z U (2 PLACES) L ( PLACES) M N K (3 PLACES) Y, Z G F E B CM6YN-12F D A X T C Outline Drawing and Circuit Diagram RTC
More informationD AB Z DETAIL "B" DETAIL "A"
QID1215 Preliminary Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (72) 925-7272 www.pwrx.com Split Dual Si/SiC Hybrid IGBT Module 1 Amperes/12 Volts Y A AA F D AB Z AC Q DETAIL "B" Q
More informationL M DETAIL "A" SIGNAL TERMINAL 3 E(L) 4 V D 5 G(H) 6 F O (H) 7 E(H) 8 OPEN
MG3QYSA Powerex, Inc., E. Hillis Street, Youngwood, Pennsylvania 1597-1 (7) 95-77 Compact IGBT Series Module 3 Amperes/1 Volts J A D K L M N W V E C1 C DETAIL "A" H B F E CE1 U W Outline Drawing and Circuit
More informationL M DETAIL "A" SIGNAL TERMINAL 3 E(L) 4 V D 5 G(H) 6 F O (H) 7 E(H) 8 OPEN
MGQYSA Powerex, Inc., E. Hillis Street, Youngwood, Pennsylvania 1597-1 (7) 95-77 Compact IGBT Series Module Amperes/1 Volts J A D K L M N W V E C1 C DETAIL "A" H B F E CE1 U W Outline Drawing and Circuit
More informationCM1800HCB-34N. <High Voltage Insulated Gate Bipolar Transistor:HVIGBT >
CM8HCB-34N CM24HCB-34N I C 8 A V CES 7 V -element in pack Insulated type CSTBT TM / Soft recovery diode AlSiC baseplate APPLICATION Traction drives,
More informationY (4 PLACES) G1W E1W G2W E2W U V W G3W E3W G4W RTC RTC RTC E4U E4W. AF JST Connector AWG Wire # SXH-001T-P ~ 22 or SXH-002T-P0.
owerex, Inc., 173 avilion ane, Youngwood, ennsylvania 15697 (72) 925-7272 www.pwrx.com TI-Series (Three evel Inverter) IGBT 75 Amperes/6 Volts A H J X B E F N W AD, AF AE, AF AD, AF A D B F G M V Outline
More information5SND 0500N HiPak IGBT Module
Data Sheet, Doc. No. 5SYA 433-2-23 5SND 5N333 HiPak IGBT Module V CE = 33 V I C = 5 A Ultra low-loss, rugged SPT+ chip-set Smooth switching SPT+ chip-set for good EMC AlSiC base-plate for high power cycling
More informationCP10TD1-24A. DIP-CIB 3Ø Converter + 3Ø Inverter + Brake 10 Amperes/1200 Volts
CP1TD1-24A Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 1697-18 (724) 92-7272 1 Amperes/12 Volts Outline Drawing and Circuit Diagram Dimensions Inches Millimeters A 2.68±.1 68.±.3 B 1.73±.2
More informationDIM1000ACM33-TS001. IGBT Chopper Module DIM1000ACM33-TS001 FEATURES KEY PARAMETERS V CES
IGBT Chopper Module DS6246-1 July 2018 (LN35934) FEATURES 10.2kV Isolation 10µs Short Circuit Withstand High Thermal Cycling Capability High Current Density Enhanced DMOS SPT Isolated AlSiC Base with AlN
More informationSymbol Description GD200CLT120C2S Units V CES Collector-Emitter Voltage 1200 V V GES Gate-Emitter Voltage ±20V V
STARPOWER SEMICONDUCTOR TM IGBT Preliminary Molding Type Module 1200V/200A 2 in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness.
More informationD AB Z DETAIL "B" DETAIL "A"
QJD1211 Preliminary Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com Split Dual SiC MOSFET Module 1 Amperes/12 Volts Y A AA F D AB Z AC Q DETAIL "B" Q P Q U B
More informationIGBT STARPOWER GD400SGK120C2S. Absolute Maximum Ratings T C =25 unless otherwise noted SEMICONDUCTOR TM. Molding Type Module
STARPOWER SEMICONDUCTOR TM IGBT GD400SGK120C2S Molding Type Module 1200V/400A 1 in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction and switching loss as well as
More informationCP15TD1-24A. DIP-CIB 3Ø Converter + 3Ø Inverter + Brake 15 Amperes/1200 Volts
Outline Drawing and Circuit Diagram Dimensions Inches Millimeters A 2.68±.1 68.±.3 B 1.73±.2 44.±.5 C.58±.4 14.7±.1 D 3.1±.2 79.±.5 E 2.83 72. F.16±.1 4.±.3 G 2.83±.1 72.±.3 H.7 2. J.2±.8 5.±.2 K.87 22.
More informationPM300DSA060 Intellimod Module Single Phase IGBT Inverter Output 300 Amperes/600 Volts
Powerex, Inc., 2 Hillis Street, Youngwood, Pennsylvania 15697-18 (724) 925-7272 PM3DSA6 Single Phase IGBT Inverter Output 3 Amperes/6 Volts G A B G J N T - DIA. (2 TYP.) N SIDE 1. VN1 2. SNR 3. CN1 4.
More informationV CES = 1200V I C = Tc = 80 C. T c = 25 C 1050 T c = 80 C 875
APTGL875U12DAG Single switch with Series diode Trench + Field Stop IGBT4 CES = 12 I C = 875A @ Tc = 8 C EK E G C CK Application Zero Current Switching resonant mode Features Trench + Field Stop IGBT 4
More informationIGBT STARPOWER GD75HFU120C1S SEMICONDUCTOR TM. Molding Type Module. 1200V/75A 2 in one-package. General Description. Features. Typical Applications
STARPOWER SEMICONDUCTOR TM IGBT GD75HFU120C1S Molding Type Module 1200V/75A 2 in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit
More informationPP400B060-ND. H-Bridge POW-R-PAK IGBT Assembly 400 Amperes/600 Volts
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com H-Bridge POW-R-PAK IGBT Assembly Q Q J P (8 PLACES) +DC C2E1 R (2 PLACES) PIN 1 N U B M N F DC L (6 PLACES) G
More informationP Q SIGNAL TERMINAL 1 F O (L) 5 F O (H) V S DETAIL "A"
MIG4J2CSB1W Powerex, Inc., 2 E. Hillis Street, Youngwood, Pennsylvania 15697-18 (724) 925-7272 Compact IPM Series Dual Module 4 Amperes/6 Volts J A D K N P Q E W E2 C1 C S F B C2E1 E DETAIL "A" R T U H
More informationL M 1 F O (L) 5 F O (H) DETAIL "A"
MIG6J2CMB1W Powerex, Inc., 2 E. Hillis Street, Youngwood, Pennsylvania 15697-18 (724) 925-7272 Compact IPM Series Dual Module 6 Amperes/6 Volts J A D K L M N W V E2 C1 C DETAIL "A" H B F E C2E1 U W DD
More informationT - 4 TYP. XØ (2 PLACES) W SQ. PIN (10 PLACES) TERMINAL CODE 1. VN1 2. SNR 3. CN1 4. VNC 5. FNO VP1 RFO AMP E2 C2E1 C1
PM2DVA12 Powerex, Inc., 2 Hillis Street, Youngwood, Pennsylvania 15697-18 (724) 925-7272 Single Phase IGBT Inverter Output 2 Amperes/12 Volts A D T - 4 TYP. XØ (2 PLACES) B E F J H R S NUTS - 3 TYP. U
More informationY Y D T SQ PIN (10 PLS) L N TERMINAL CODE 5 : FNO 4 : VNC N 3 : CN1 2 : NC 1 : VN1 5 : FPO 4 : VPC P 3 : CP1 2 : NC 1 : VP1. FWDi IGBT C2E1.
PM8DV1B6 Powerex, Inc., 173 Pavilion Lane, oungwood, Pennsylvania 1697 (724) 92-7272 www.pwrx.com Single Phase IGBT Inverter Output 8 Amperes/6 Volts F (4 PLACES) A C U V B E H (3 TP) C2E1 E2 C1 4 3 2
More informationMolding Type Module IGBT, 2-in-1 Package, 1200 V and 300 A
Molding Type Module IGBT, 2-in-1 Package, 12 V and 3 A VS-GB3TH12N Double INT-A-PAK FEATURES 1 μs short circuit capability V CE(on) with positive temperature coefficient Maximum junction temperature 15
More informationMITSUBISHI INTELLIGENT POWER MODULES PM800HSA060 FLAT-BASE TYPE INSULATED PACKAGE
PM8HSA6 A K J L M LABEL V (2 REQD) C E R E B W 5 FO 4 VC CI 2 SR 1 V1 U φ (4 HOLES) G S φ (2 PLS) TYP Q 12 4 5 F D T SQ PIN (5 PLS) P H C Description: Mitsubishi Intelligent Power Modules are isolated
More informationDIM1800ESS12-A000. Single Switch IGBT Module DIM1800ESS12-A000 FEATURES KEY PARAMETERS V CES
Single Switch IGBT Module Replaces DS5857-2 DS5857-3 August 2014 (LN31868) FEATURES 10µs Short Circuit Withstand Non Punch Through Silicon Isolated Cu Base with Al 2 O 3 Substrates Lead Free cotruction
More informationMolding Type Module IGBT, Chopper in 1 Package, 1200 V and 300 A
Molding Type Module IGBT, Chopper in 1 Package, 12 V and 3 A VS-GB3NH12N PRIMARY CHARACTERISTICS V CES I C at T C = 8 C V CE(on) (typical) at I C = 3 A, 25 C Speed Package Circuit configuration Dual INT-A-PAK
More informationV VPI V (14 TYP.) VFO R (2 TYP.) WFO UP UFO V VPC GND GND GND GND GND GND VCC
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Three Phase IGBT Inverter Output N A C D Q Q Q 1 234 5678 9 11 13 15 17 2 14 16 18 V (14 TYP.) R (2 TYP.) 1. VUPC 2.
More informationMolding Type Module IGBT, 1-in-1 Package, 1200 V and 300 A
Molding Type Module IGBT, 1-in-1 Package, 12 V and 3 A FEATURES VS-GB3AH12N PRIMARY CHARACTERISTICS V CES I C at T C = 8 C V CE(on) (typical) at I C = 3 A, 25 C Speed Package Circuit configuration Dual
More informationSKM200GAH123DKL 1200V 200A CHOPPER Module August 2011 PRELIMINARY RoHS Compliant
SKM2GAH123DKL 12V 2A CHOPPER Module August 211 PRELIMINARY RoHS Compliant FEATURES Ultra Low Loss High Ruggedness High Short Circuit Capability V CE(sat) With Positive Temperature Coefficient With Fast
More informationIGBT STARPOWER SEMICONDUCTOR TM. Molding Type Module. 1200V/225A 6 in one-package. General Description. Features. Typical Applications
STARPOWER SEMICONDUCTOR TM IGBT GD225HTL120C7S Preliminary Molding Type Module 1200V/225A 6 in one-package General Description STARPOWER IGBT power module provides ultra low conduction loss as well as
More informationHalf Bridge IGBT Power Module, 600 V, 100 A
Half Bridge IGBT Power Module, 6 V, A VS-GTTP6N PRODUCT SUMMARY V CES I C at T C = 8 C V CE(on) (typical) at I C = A, 5 C Speed Package Circuit INT-A-PAK 6 V A.65 V 8 khz to 3 khz INT-A-PAK Half bridge
More informationU (2 TYP.) T WFO VUPC IN F O GND GND OUT OT OUT OT S I
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Three Phase IGBT Inverter W (6 PLACES) X (4 PLACES) AD AA W A B K K L Z V Z U AG Z AB AE AG B N P AC AC AH M M AF
More informationCM200DY-24A. APPLICATION AC drive inverters & Servo controls, etc CM200DY-24A. IC...200A VCES V Insulated Type 2-elements in a pack
CMDY-A CMDY-A IC...A CES... Insulated Type -elements in a pack APPLICATION AC drive inverters & Servo controls, etc OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 9 8 CE E C E G GE 8 () -φ6. MOUNTING
More information< IGBT MODULES > CM75MXA-24S HIGH POWER SWITCHING USE INSULATED TYPE APPLICATION
CIB (Converter+Inverter+Chopper Brake) Collector current I C...... 75A Collector-emitter voltage CES... 2 Maximum junction temperature T jmax... 75 C Flat base Type APPLICATION AC Motor Control, Motion/Servo
More informationMG12300D-BN2MM Series 300A Dual IGBT
Series 300A Dual IGBT RoHS Features High short circuit capability,self limiting short circuit current IGBT 3 CHIP(Trench+Field Stop technology) (sat) with positive temperature coefficient Fast switching
More informationPM30CSJ060 Intellimod Module Three Phase IGBT Inverter Output 30 Amperes/600 Volts
Three Phase IGBT Inverter Output N A C D Q Q Q 1 234 5678 9 11 13 15 17 2 14 16 18 V (14 TYP.) R (2 TYP.) 1. VUPC 2. UFO 3. UP 4. VUPI 5. VVPC 6. VFO 7. VP 8. VVPI 9. VWPC 1. WFO 11. WP 12. VWPI 13. 14.
More informationPM25RSB120 Intellimod Module Three Phase + Brake IGBT Inverter Output 25 Amperes/1200 Volts
PM25RSB12 Three Phase + Brake IGBT Inverter Output 25 Amperes/12 Volts U L Q K J AD AC FO N AD Outline Drawing and Circuit Diagram Dimensions Inches Millimeters V A 3.96 ±.4 1.5 ± 1. B 3.48 ±.2 88.5 ±.5
More informationPS21867-P. Intellimod Module Dual-In-Line Intelligent Power Module 30 Amperes/600 Volts
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Dual-In-Line Intelligent Power Module J A N M C BB P B AA 27 28 30 31 33 35 21 1 2 3 4 29 5 6 7 8 32 9 1 12 13 34
More informationABB HiPak TM. IGBT Module 5SNG 0150P VCE = 4500 V IC = 150 A
VCE = 45 V IC = 5 A ABB HiPak TM IGBT Module 5SNG 5P453 Doc. No. 5SYA 593-4 7-23 Ultra low loss, rugged SPT + chip-set Smooth switching SPT + chip-set for good EMC High iulation package AlSiC base-plate
More information< IGBT MODULES > CM50MXA-24S HIGH POWER SWITCHING USE INSULATED TYPE APPLICATION
CIB (Converter+Inverter+Chopper Brake) APPLICATION AC Motor Control, Motion/Servo Control, Power supply, etc. OUTLINE DRAWING & INTERNAL CONNECTION Collector current I C...... 5A Collector-emitter voltage
More informationMolding Type Module IGBT, 2 in 1 Package, 1200 V, 100 A
Molding Type Module IGBT, 2 in 1 Package, 12 V, 1 A FEATURES VS-GB1TP12N PRIMARY CHARACTERISTICS V CES I C at T C = 8 C V CE(on) (typical) at I C = 1 A, C Speed Package Circuit configuration INT-A-PAK
More informationU P V VPI VFO WFO UP UFO V VPC GND GND
N A C D Q Q Q 1 234 5678 9 11 13 15 17 2 14 16 18 V (14 TYP.) R (2 TYP.) 1. VUPC 2. UFO 3. UP 4. VUPI 5. VVPC 6. VFO 7. VP 8. VVPI 9. VWPC 10. WFO 11. WP 12. VWPI 13. 14. 15. 16. 17. 18. 19. 20. 21. 22.
More informationU P V VPI VFO R (2 TYP.) WFO UP UFO V VPC GND GND
N A C D Q Q Q 1 234 5678 9 11 13 15 17 2 14 16 18 V (14 TYP.) R (2 TYP.) 1. VUPC 2. UFO 3. UP 4. VUPI 5. VVPC 6. VFO 7. VP 8. VVPI 9. VWPC 10. WFO 11. WP 12. VWPI 13. 14. 15. 16. 17. 18. 19. 20. 21. 22.
More informationPS21353-GP. Intellimod Module Dual-In-Line Intelligent Power Module 10 Amperes/600 Volts
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Dual-In-Line Intelligent Power Module Outline Drawing and Circuit Diagram Dimensions Inches Millimeters A 1.93 49.0 B
More informationSUSPM TM SEPT LUH75G1201_Preliminary LUH75G1201Z*_Preliminary. SUSPM1 94 X 34 X 30mm. 1200V 75A 2-Pack IGBT Module. Features.
SEPT. 9 LUH75G121_Preliminary LUH75G121Z*_Preliminary SUSPM TM 1V 75A 2-Pack IGBT Module Features Soft punch through IGBT(SPT + IGBT) - Low saturation voltage - Positive temperature coefficient - Fast
More informationSymbol Parameters Test Conditions Min Typ Max Unit R thjc. Per IGBT 0.09 K/W R thjcd
2V 2A IGBT Module RoHS Features Ultra low loss High ruggedness High short circuit capability Positive temperature coefficient With fast free-wheeling diodes Agency Approvals Applications Inverter Converter
More informationUNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD 600V, SMPS N-CHANNEL IGBT DESCRIPTION The UTC is a N-channel IGBT. it uses UTC s advanced technology to provide customers with high input impedance, high switching speed
More informationTENTATIVE PP225D120. POW-R-PAK TM 225A / 1200V Half Bridge IGBT Assembly. Description:
Description: The Powerex is a configurable IGBT based power assembly that may be used as a converter, chopper, half or full bridge, or three phase inverter for motor control, power supply, UPS or other
More informationIGBT STARPOWER SEMICONDUCTOR TM. Molding Type Module. 1200V/10A PIM in one-package. General Description. Features. Typical Applications
STRPOWER SEMICONDUCTOR TM IGBT GD10PJK120L1S Preliminary Molding Type Module 1200/10 PIM in one-package General Description STRPOWER IGBT Power Module provides ultra low conduction and switching loss as
More information1200V 50A IGBT Module
12V 5A MG125W-XBN2MM RoHS Features High level of integration only one power semiconductor module required for the whole drive Low saturation voltage and positive temperature coefficient Fast switching
More informationDIM400PBM17-A000. IGBT Bi-Directional Switch Module DIM400PBM17-A000 ±1700V V T FEATURES KEY PARAMETERS V DRM. (typ) 4.9V I C. (max) 400A I C(PK)
DIMPBM17 DIMPBM17 IGBT BiDirectional Switch Module DS55242.3 June 8 (LN26123) FETURES 1µs Short Circuit Withstand High Thermal Cycling Capability Non Punch Through Silicon KEY PRMETERS DRM ±17 T (typ)
More informationPS21265-P PS21265-AP Intellimod Module Dual-In-Line Intelligent Power Module 20 Amperes/600 Volts
PS21265-P PS21265-AP Dual-In-Line Intelligent Power Module H A DETAIL "A" HEATSINK SIDE 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 M B K P N J 22 23 24 25 26 C L Q DETAIL "A" W G DETAIL "C"
More informationSymbol Parameters Test Conditions Min Typ Max Unit T J max. Max. Junction Temperature 150 C T J op. Operating Temperature C T stg
V 15A Module RoHS Features High level of integration only one power semiconductor module required for the whole drive Low saturation voltage and positive temperature coefficient Fast switching and short
More informationItem Symbol Condition Value Units V C = 25 C 1200 V V C = 25 C ±20
LUHG121_Preliminary LUHG121Z*_Preliminary SEPT. 29 SUSPM TM 12V A 2-Pack IGBT Module Features Soft punch through IGBT(SPT + IGBT) - Low saturation voltage - Positive temperature coefficient - Fast switching
More informationTYP K "T" (4 TYP) TYP TYP UP UFO V VPI GND GND GND GND IN V CC OUT S I
MITSUBISHI TELLIGENT POWER MODULES PM7RSK6 SULATED PACKAGE B D. UPC. UFO. UP. UPI. PC 6. FO 7. P 8. PI 9. WPC. WFO. WP. WPI. NC. NI. BM 6. UN 7. N 8. WN 9. FO. P. BR... N U. W A E W F G H P J K L 6 7 8
More informationPM50RSK060 Intellimod Module Three Phase + Brake IGBT Inverter Output 50 Amperes/600 Volts
Powerex, Inc., 2 Hillis Street, Youngwood, Pennsylvania 15697-18 (724) 925-7272 PM5RSK6 Three Phase + Brake IGBT Inverter Output 5 Amperes/6 olts U J A B EE DD THICK TYPICAL 19 PLACES 12 34 7 5 6 8 9 11
More informationItem Symbol Condition Value Units V C = 25 C 1200 V V C = 25 C ±20
LVHG121_Preliminary LVHG121Z*_Preliminary Features Soft punch through IGBT(SPT + IGBT) - Low saturation voltage - Positive temperature coefficient - Fast switching - High ruggedness Free wheeling diodes
More information1200 V 600 A IGBT Module
1200 V 600 A IGBT RoHS Features Trench-gate field stop IGBT technology Low saturation voltage and positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and
More informationACEPACK 2 sixpack topology, 1200 V, 75 A trench gate field-stop IGBT M series, soft diode and NTC
Datasheet ACEPACK 2 sixpack topology, 12, 75 A trench gate field-stop IGBT M series, soft diode and NTC Features ACEPACK 2 ACEPACK 2 power module DBC Cu Al 2 O 3 Cu Sixpack topology 12, 75 A IGBTs and
More informationSymbol Parameters Test Conditions Min Typ Max Unit T J max) Max. Junction Temperature 150 C T J op. Operating Temperature C T stg
12V 15A IGBT Module MG1215W-XN2MM RoHS Features High level of integration IGBT 3 CHIP(Trench+Field Stop technology) Low saturation voltage and positive temperature coefficient Fast switching and short
More informationABB HiPak. IGBT Module 5SNA 1200G VCE = 4500 V IC = 1200 A
VCE = 45 V IC = 2 A ABB HiPak IGBT Module 5SNA 2G453 Doc. No. 5SYA 4-5 3-26 Ultra low-loss, rugged SPT + chip-set Smooth switching SPT + chip-set for good EMC Industry standard package High power deity
More informationHiRel TM INT-A-Pak 2, PLASTIC HALF-BRIDGE IGBT MODULE
PD-97014C HiRel TM INT-A-Pak 2, PLASTIC HALF-BRIDGE IGBT MODULE G300HHCK12P2 Product Summary Part Number V CE I C V CE(SAT) G300HHCK12P2 1200V 300A 2.2 HiRel TM INT-A-Pak 2 The HiRel TM INT-A-Pak series
More informationCM400HG-66H HIGH POWER SWITCHING USE 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MITSUBISHI HIGBT MODULES CM4HG-66H rd-ersion HIGBT (High oltage Insulated Gate Bipolar Transistor) Modules CM4HG-66H IC...4 CES... High Insulated Type -element in a Pack ISiC Baseplate PPLICTION Traction
More informationV CE I C (T C =100 C) V CE(sat) (T J =25 C) Symbol V GE I C I CM I LM 6.6 I F 2.6 I FM. t SC P D T J, T STG T L. R θ JA R θ JC
AOD5B5N 5V, 5A Alpha IGBT TM With soft and fast recovery anti-parallel diode General Description Latest Alpha IGBT (α IGBT) technology 5V breakdown voltage Very low turn-off switching loss with softness
More informationReplaces March 2002, version DS DS July 2002
DIM24ESM17 DIM24ESM17 Single Switch IGBT Module Replaces March 22, version DS54473. DS54474.1 July 22 FETURES 1µs Short Circuit Withstand High Thermal Cycling Capability Non Punch Through Silicon Isolated
More informationPM75DSA120 Intellimod Module Single Phase IGBT Inverter Output 75 Amperes/1200 Volts
ingle Phase IGBT Inverter Output C L G A B G C2E1 E2 C1 G U N 1 2 3 4 5 M D T - DIA. (4 TYP.) N IDE 1. VN1 2. NR 3. CN1 4. VNC 5. FNO P IDE 1. VP1 2. PR 3. CP1 4. VPC 5. FPO 1 2345 P Q - DIA. (2 TYP.)
More informationV CE I C (T C =100 C) V CE(sat) (T J =25 C) 1.95V. Symbol V GE I C I CM I LM. I F to 150 I FM P D T J, T STG T L
AOKBHAL V, A AlphaIGBT TM With soft and fast recovery anti-parallel diode General Description Latest AlphaIGBT (αigbt) Technology V Breakdown voltage Very fast and soft recovery freewheeling diode High
More informationIGBT ECONO3 Module, 150 A
IGBT ECONO3 Module, 5 A VS-GB5YG2NT ECONO3 4 pack FEATURES Gen 5 non punch through (NPT) technology μs short circuit capability Square RBSOA HEXFRED low Q rr, low switching energy Positive temperature
More informationAB (2 PLACES) 30 NC 31 P 33 V 34 W
Dual-In-Line Intelligent Power Module A D G H R DUMMY PINS J K L Q C HEATSINK SIDE B 28 27 26 25 24 23 22 21 20 19 18 17 16 15 14 13 12 11 10 29 30 E E E F 9 8 F 7 6 5 4 3 2 1 M P 35 35 34 33 32 31 N P
More informationDual INT-A-PAK Low Profile 3-Level Half Bridge Inverter Stage, 300 A
VS-GT3FD6N Dual INT-A-PAK Low Profile 3-Level Half Bridge Inverter Stage, 3 A FEATURES Trench plus Field Stop IGBT technology FRED Pt antiparallel and clamping diodes Short circuit capability Low stray
More informationIGBT XPT Module H Bridge
IGBT XPT Module H Bridge Preliminary data CES = 12 25 = 85 CE(sat) = 1.8 Part name (Marking on product) MIX 61H12ED 13 1 T1 D1 9 T5 D5 2 1 16 E72873 14 3 T2 D2 11 T6 D6 4 12 17 Features: Easy paralleling
More informationV VPC V FO V WPI W FO W UP UFO V VPI GND GND GND GND V CC OUT OUT. Dimensions Inches Millimeters L
MITSUBISHI TELLIGET POWER MODULES SULATED PACKAGE D R - DIA. (4 TYP.) E H U V J 12 A B 34 7 5 6 8 9 11 13 15 17 19 T (15 TYP.) Q (4 TYP.) 10 12 14 16 18 U V P B W L M M M M M G 6.0 ± 0.1 X 0.8 ± 0.1 MM
More informationV CE I C (T C =100 C) V CE(sat) (T J =25 C) 1.6V. Symbol V GE I C I CM I LM I F I FM. t SC P D T L. R θ JA R θ JC
AOTB6M2 6V, A Alpha IGBT TM With soft and fast recovery anti-parallel diode General Description Latest Alpha IGBT (α IGBT) technology 6V breakdown voltage Very fast and soft recovery freewheeling diode
More informationIXBX25N250 = 2500V = 25A 3.3V. High Voltage, High Gain BIMOSFET TM Monolithic Bipolar MOS Transistor. Symbol Test Conditions Maximum Ratings
High Voltage, High Gain BIMOSFET TM Monolithic Bipolar MOS Transistor IXBX25N25 V CES 9 = 25V = 25A V CE(sat) 3.3V Symbol Test Conditions Maximum Ratings V CES = 25 C to 15 C 25 V V CGR = 25 C to 15 C,
More informationMG06400D-BN4MM Series 400A Dual IGBT
V Family MGD-BNMM Series A Dual RoHS Features High short circuit capability,self limiting short circuit current (sat) with positive temperature coefficient Fast switching and short tail current Free wheeling
More informationV CE I C (T C =100 C) V CE(sat) (T J =25 C) 1.6V TO-220F C. Symbol V GE I C I CM I LM I F I FM. t SC P D T J, T STG T L.
AOTFB6M2 6V, A Alpha IGBT TM With soft and fast recovery anti-parallel diode General Description Latest Alpha IGBT (α IGBT) technology 6V breakdown voltage Very fast and soft recovery freewheeling diode
More informationTYPICAL PERFORMANCE CURVES = 25 C = 110 C = 175 C. Watts T J. = 4mA) = 0V, I C. = 3.2mA, T j = 25 C) = 25 C) = 200A, T j = 15V, I C = 125 C) = 25 C)
TYPICAL PERFORMANCE CURVES 6V APT2GN6J APT2GN6J Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low (ON) and are ideal for low frequency applications that require
More informationDIM600XSM45-F000. Single Switch IGBT Module FEATURES KEY PARAMETERS V CES. 4500V V CE(sat) * (typ) 2.9 V I C
Single Switch IGBT Module DS5874-1.1 August 26 (LN24724) FEATURES 1µs Short Circuit Withstand Soft Punch Through Silicon Lead Free construction Isolated MMC Base with AlN Substrates High Thermal Cycling
More informationV CE I C (T C =100 C) V CE(sat) (T J =25 C) 1.95V. Symbol V GE I C I CM I LM I F I FM P D T L. R θ JA R θ JC
AOKBM V, A Alpha IGBT TM With soft and fast recovery anti-parallel diode General Description Latest Alpha IGBT (α IGBT) technology V breakdown voltage Fast and soft recovery freewheeling diode High efficient
More informationDFM600FXM18-A000. Fast Recovery Diode Module DFM600FXM18-A000 FEATURES KEY PARAMETERS V RRM. 1800V V F (typ) 2.0V I F (max) 600A I FM (max) 1200A
Fast Recovery Diode Module Replaces DS5438-1.4 DS5438-2 April 2010 (LN26762) FEATURES Low Reverse Recovery Charge High Switching Speed Low Forward Volt Drop Isolated AlSiC Base with AlN Substrates Dual
More informationHigh Power Rugged Type IGBT Module
ug. 29 High Power Rugged Type IGBT Module Description DWIN S IGBT 7DM3 Package devices are optimized to reduce losses and switching noise in high frequency power conditioning electrical systems. These
More informationIGBT ECONO3 Module, 100 A
IGBT ECONO3 Module, A VS-GBYGNT ECONO 3 4 pack PRIMARY CHARACTERISTICS V CES V V CE(on) typ. at A 3.52 V I C(DC) at T C = 64 C A Package ECONO 3 Circuit configuration 4 pack with thermistor FEATURES Gen
More informationTENTATIVE PP800D120-V01
Description: The Powerex POW-R-PAK is a configurable IGBT based power assembly that may be used as a converter, chopper, half or full bridge, or three phase inverter for motor control, power supply, UPS
More informationTechnical. Application. Assembly. Availability. Pricing. Phone
6121 Baker Road, Suite 108 Minnetonka, MN 55345 www.chtechnology.com Phone (952) 933-6190 Fax (952) 933-6223 1-800-274-4284 Thank you for downloading this document from C&H Technology, Inc. Please contact
More informationIGBT Module Sixpack MWI 25-12A7(T) I C25 = 50 A V CES = 1200 V V CE(sat) typ. = 2.2 V. Short Circuit SOA Capability Square RBSOA
MWI 25127(T) IGBT Module Sixpack Short Circuit SO Capability Square RBSO I C25 = 50 CES = 1200 CE(sat) typ. = 2.2 Part name (Marking on product) MWI25127 MWI25127T 13 T version 1 5 9 T 2 10 1 15 14 E72873
More informationFeatures. Applications. Characteristics Symbol Rating Unit. T C=25 o C I C. T C=80 o C 100 A. Operating Junction Temperature Tj -55~150
General Description MagnaChip s IGBT Module 7DM-1 package devices are optimized to reduce losses and switching noise in high frequency power conditioning electrical systems. These IGBT Module series are
More informationV CE I C (T C =100 C) V CE(sat) (T J =25 C) 1.94V. Symbol V GE I C I CM I LM I F 30 I FM. t SC P D T L. R θ JA R θ JC
AOKB5M 5V, A Alpha IGBT TM With soft and fast recovery anti-parallel diode General Description Latest AlphaIGBT (α IGBT) technology 5V breakdown voltage Very fast and soft recovery freewheeling diode High
More informationMPMC100B120RH NPT & Rugged Type 1200V IGBT Module
General Description MagnaChip s IGBT Module 7DM- package devices are optimized to reduce losses and switching noise in high frequency power conditioning electrical systems. These IGBT Module series are
More informationSymbol Parameters Test Conditions Min Typ Max Unit T J max. Max. Junction Temperature 150 C T J op. Operating Temperature C T stg
V 2A Module MG2D-BN2MM RoHS Features High short circuit capability, self limiting short circuit current 3 CHIP(Trench+Field Stop technology) (sat) with positive temperature coefficient Fast switching and
More informationInsulated Gate Bi-Polar Transistor Type T1600GB45G
Date:- 1 Nov, 214 Data Sheet Issue:- 1 Insulated Gate Bi-Polar Transistor Type Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS V CES Collector emitter voltage 45 V V DC link Permanent DC voltage
More informationAOT15B65M1/AOB15B65M1
AOT5B65M/AOB5B65M 65V, 5A Alpha IGBT TM With soft and fast recovery anti-parallel diode General Description Latest AlphaIGBT (α IGBT) technology 65V breakdown voltage Very fast and soft recovery freewheeling
More informationV CE I C (T C =100 C) V CE(sat) (T J =25 C) 1.57V. Symbol V GE I C I CM I LM I F I FM. t SC P D T J, T STG T L. R θ JA R θ JC
AOTFBM V, A Alpha IGBT TM With soft and fast recovery anti-parallel diode General Description Latest AlphaIGBT (α IGBT) technology V breakdown voltage Very fast and soft recovery freewheeling diode High
More informationPOW-R-BLOK TM Dual Diode Isolated Module 600 Amperes / Up to 2400 Volts. LD41 60 Dual Diode POW-R-BLOK TM Module 600 Amperes / Volts
LD41 6 6 Amperes / Up to 24 Volts R E OUTLINE DRAWING J 3 3 L Q - DIA. (4 TYP.) 2 B C F A 2 CONNECTION DIAGRAM H 1 P - M1 THD (3 TYP.) S N K M 1 G D LD41 6 Dual Diode Module 6 Amperes / 8-24 Volts LD41
More informationReplaces December 2003 version, issue FDS FDS February (E 2 ) 6(G 2 )
DIMWLS1 DIMWLS1 IGBT Chopper Module Lower rm Control Replaces December 3 version, issue FDS56971.1 FDS56972. February 4 FETURES 1µs Short Circuit Withstand Non Punch Through Silicon Isolated Copper Baseplate
More informationCAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
V A Thunderbolt IGBT & FRED The Thunderbolt IGBT is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Thunderbolt IGBT combined with an APT free-wheeling ultrafast Recovery
More informationV CE I C (T C =100 C) V CE(sat) (T J =25 C) 1.7V TO-220F C G E. Symbol V GE I C I CM I LM I F I FM. t SC P D T J, T STG T L.
AOTF5B65M 65V, 5A Alpha IGBT TM With soft and fast recovery anti-parallel diode General Description Latest AlphaIGBT (α IGBT) technology 65V breakdown voltage Very fast and soft recovery freewheeling diode
More informationFeatures TO-264 E. Symbol Description SGL50N60RUFD Units V CES Collector-Emitter Voltage 600 V V GES Gate-Emitter Voltage ± 20 V Collector T
Short Circuit Rated IGBT General Description Fairchild's RUFD series of Insulated Gate Bipolar Transistors (IGBTs) provide low conduction and switching losses as well as short circuit ruggedness. The RUFD
More information