Item Symbol Unit MBL1600E17F Collector Emitter Voltage V CES V 1,700 Gate Emitter Voltage V GES V 20 Collector Current
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1 IGBT MODULE Spec.No.IGBT-SP-57 R P MBL6E7F Silicon N-channel IGBT 7V F version FEATURES Soft switching behavior & low conduction loss: Soft low-injection punch-through with Advanced trench HiGT* (*High conductivity IGBT). Low driving power: Low input capacitance advanced trench gate. Low noise recovery: Ultra soft fast recovery diode. ABSOLUTE MAXIMUM RATINGS (Tc=5 o C) Item Symbol Unit MBL6E7F Collector Emitter Voltage V CES V,7 Gate Emitter Voltage V GES V Collector Current DC I C,6 A ms I Cp, Forward Current DC I F(FWD), A (Free wheel Diode) ms I FM(FWD), Forward Current DC I F(chopper), A (Chopper Diode) ms I FM(chopper), Junction Temperature T j op o C -5 ~ +5 Maximum Junction Temperature() T vj max o C 75 Storage Temperature T stg o C -5 ~ +5 Isolation Voltage V ISO V RMS,(AC minute) Screw Torque Terminals (M/M8) - /5 () N m Mounting (M6) - 6 () Notes: () Recommended Value.8./5 + -N m () Recommended Value 5.5.5N m () Regarding the definition of T vj max for each operation mode, please refer to LD-ES-77. ELECTRICAL CHARACTERISTICS ) IGBT + FWD Item Symbol Unit Min. Typ. Max. Test Conditions Collector Emitter Cut-Off Current I CES ma o C V CE=,7V, V GE=V, Tj=5 o C CE=,7V, GE=V, V V Tj=5 Gate Emitter Leakage Current I GES na V GE= V, V CE=V, Tj=5 o C Collector Emitter Saturation Voltage V CE(sat) V C I C=,6A, V GE=5V, Tj=5 o C I C=,6A, V GE=5V, Tj=5 o Gate Emitter Threshold Voltage V GE(TO) V V CE=V, I C=6mA, Tj=5 C o Input Capacitance C ies nf V CE=V, V GE=V, f=khz, Tj=5 o C Internal Gate Resistance Rge -. - V CE=V, V GE=V, f=khz, Tj=5 o C Rise Time t r -..8 V CC=9V, Ic=,6A Switching Times Turn On Time t on -.. Ls=nH () s Fall Time t f -..8 R G(on/off)=.9/.9 () Turn Off Time t off V GE= 5V, Tj=5 o C Peak Forward Voltage Drop V FM V -. - IF=,A, V GE=V, Tj=5 o C Measured at auxiliary terminals -. - IF=,A, V GE=V, Tj=5 o C Measured at auxiliary terminals Turn On Loss E on J/P V CC=9V, Ic=,6A Ls=nH () Turn Off Loss E off J/P -. - R G(on/off)=.9/.9Ω () V GE= 5V, Tj=5 o C Stray inductance in module LSCE nh - - Thermal Impedance IGBT Rth(j-c) K/W Junction to case FWD Rth(j-c) - -. Contact Thermal Impedance Rth(c-f) K/W Case to fin ( grease=w/(m K), heat-sink flatness 5um)
2 IGBT MODULE Spec.No.IGBT-SP-57 R P MBL6E7F ) Chopper DIODE Item Symbol Unit Min. Typ. Max. Test Conditions Repetitive Reverse Current IRRM ma VR=,7V, Tj=5 o C - VR=,7V, Tj=5 o C Peak Forward Voltage Drop Measured at main terminals VF V (Between main terminals) IF=,A, Tj=5 o C -. - Measured at main terminals -. - IF=,A, Tj=5 o C Reverse Recovery Time trr s V CC=9V, IF=,A, Reverse Recovery Loss E rr J/P Ls=nH, R G(on)=.9Ω () V GE= 5V, Tj=5 o C Thermal Impedance Rth(j-c) K/W - -. Junction to case Contact Thermal Impedance Rth(c-f) K/W Case to fin (at Chopper Diode part) Notes:() Ls and R G are the test condition s values for evaluation of the switching times, not recommended value. Please, determine the suitable R G value after the measurement of switching waveforms (overshoot voltage, etc.) with appliance mounted. * Please contact our representatives at order. * For improvement, specifications are subject to change without notice. * For actual application, please confirm this spec sheet is the newest revision. * ELECTRICAL CHARACTERISTICS values are according to IEC 677- and IEC
3 Forward Current IF (A) Collector Current IC (A) Collector Current IC (A) IGBT MODULE Spec.No.IGBT-SP-57 R P MBL6E7F 8 Tj=5 VGE=5V V 8 Tj=5 VGE=5V V V V 6 6 9V 9V 8 8 7V 7V 5 5 Collector - Emitter Voltage VCE (V) Collector - Emitter Voltage VCE (V) IC vs. VCE (Tj=5 ) IC vs. VCE (Tj=5 ) VGE=V Tj=5 Tj=5 6 8 Forward Voltage VF (V) IF vs. VF of Chopper Diode
4 Reverse Recovery Loss, Err (J/pulse) Swiching time, ton,tr,toff,tf (us) Turn-on Loss, Eon (J/pulse) Turn-off Loss, Eoff (J/pulse) IGBT MODULE Spec.No.IGBT-SP-57 R P MBL6E7F VCC=9V RG=.9Ω Ls=nH Tj=5 VCC=9V RG=.9Ω Ls=nH Tj= Collector Current, IC (A) Collector Current, IC (A) Turn-on loss vs. Collector current Turn-off loss vs. Collector current VCC=9V RG=.9Ω Ls=nH Tj=5 8 VCC=9V RG=.9Ω Ls=nH Tj=5.5 6 toff.5 tf.5 ton tr Forward Current, IF (A) Collector Current, IC (A) Recovery loss vs. Forward current of chopper diode Switching time vs. Collector current
5 Swiching time,trr (us) IGBT MODULE Spec.No.IGBT-SP-57 R P5 MBL6E7F.6 VCC=9V RG=.9Ω Ls=nH Tj= Forward Current, IF (A) Switching time vs. Forward current of chopper diode
6 Reverse Recovery Loss,Err (J/pulse) Turn-on Loss, Eon (J/pulse) Turn-off Loss, Eoff (J/pulse) IGBT MODULE Spec.No.IGBT-SP-57 R P6 MBL6E7F VCC=9V IC=6A Ls=nH Tj=5 VCC=9V IC=6A Ls=nH Tj= Gate Resistance, RG (Ω ) Gate Resistance, RG (Ω) Turn-on loss vs. Gate Resistance Turn-off loss vs. Gate Resistance VCC=9V IF=A Ls=nH Tj= Gate Resistance, RG (Ω) Recovery loss vs. Gate Resistance of chopper diode
7 IC (A) IR (A) Cies, Coes, Cres (nf) Gate - Emitter Voltage VGE (V) IGBT MODULE Spec.No.IGBT-SP-57 R P7 MBL6E7F,. Tj=5 o C f=khz TYPICAL 5 Vcc=9V, Ic=6A VGE=-5V...+5V Tj=5 o C TYPICAL. Cies 5. Coes Cres Collector - Emitter Voltage, VCE (V) Cies,Coes,Cres - VCE Gate Charge QG (uc) QG-VGE Curve Pmax.=.7MW 5 5 VCC V, -5 o C Tj 5 o C VGE=±5V, RG(off)=.9Ω Ls nh, Pulse width us 5 VCC V, IF A di/dt=8a/us, Tj=5 o C Ls nh, Pulse width us VCE (V) *Defined at auxiliary terminals VR (V) *Defined at main terminals RBSOA RecSOA of chopper diode
8 Thermal Impedance Zth(j-c) (K/W) IGBT MODULE Spec.No.IGBT-SP-57 R P8 MBL6E7F TRANSIENT THERMAL IMPEDANCE. Maximum FWD Chopper Diode. IGBT..... Time: t(s) Transient Thermal Impedance Curve Curve Approximation Model Σ rth[n]*(-exp(-t/τth[n])) n Unit τ th[n].5e-.58e-.9e- 5.6E- sec rth[n,igbt] 8.97E-.9E-.7E-.97E- K/W rth[n,diode].5e- 5.E- 5.E- 8.E- K/W Material declaration Please note the following materials are contained in the product, in order to keep characteristic and reliability level. Material Lead (Pb) and its compounds Contained part Solder
9 IGBT MODULE Spec.No.IGBT-SP-57 R P9 MBL6E7F Outline Drawing Unit in mm Weight: g C C C C(A) G E E E E(K) Circuit diagram
10 IGBT MODULE Spec.No.IGBT-SP-57 R P MBL6E7F HITACHI POWER SEMICONDUCTORS Notices. The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact Hitachi sales department for the latest version of this data sheets.. Please be sure to read "Precautions for Safe Use and Notices" in the individual brochure before use.. In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, life-support-related medical equipment, fuel control equipment and various kinds of safety equipment), safety should be ensured by using semiconductor devices that feature assured safety or by means of users fail-safe precautions or other arrangement. Or consult Hitachi s sales department staff.. In no event shall Hitachi be liable for any damages that may result from an accident or any other cause during operation of the user s units according to this data sheets. Hitachi assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in this data sheets. 5. In no event shall Hitachi be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 6. No license is granted by this data sheets under any patents or other rights of any third party or Hitachi Power Semiconductor Device, Ltd. 7. This data sheets may not be reproduced or duplicated, in any form, in whole or in part, without the expressed written permission of Hitachi Power Semiconductor Device, Ltd. 8. The products (technologies) described in this data sheets are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety not are they to be applied to that purpose by their direct purchasers or any third party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations. For inquiries relating to the products, please contact nearest overseas representatives that is located Inquiry portion on the top page of a home page. Hitachi power semiconductor home page address
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