Item Symbol Unit MSM600FS33ALT Drain Source Voltage VDSS V 3,300 Gate Source Voltage VGSS V +20/-15 Drain Current. 600 A 1ms IDM 1,200 Source Current
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1 SiC MODULE SiC MOSFET 3300V Spec.No.IGBT-SP-18021R0 P 1 FEATURES Ultra low switching loss with SiC MOSFET High current density package Low stray inductance & low Rth(j-c) Half-bridge (2in1) Built in temperature sensor Scalable large current easily handled by paralleling Equipped with current sensing terminals ABSOLUTE MAXIMUM RATINGS (Tc=25 o C ) Item Symbol Unit Drain Source Voltage VDSS V 3,300 Gate Source Voltage VGSS V +20/-15 Drain Current DC ID 600 A 1ms IDM 1,200 Source Current DC IS 600 A 1ms ISM 1,200 Junction Temperature Tvj op o C -50 ~ +150 Storage Temperature Tstg o C -55 ~ +150 Isolation Voltage VISO VRMS 6,000(AC 1 minute) Screw Torque Terminals (M3/M8) M 0.8/15 N m Mounting (M6) M 6.0 (1) Notes: (1) Recommended Value N m ELECTRICAL CHARACTERISTICS Item Symbol Unit Min. Typ. Max. Test Conditions Drain Source Cut-Off Current I DSS ma VDS=3,300V, VGS=0V, Tvj =25 o C VDS=3,300V, VGS=0V, Tvj =150 o C Gate Source Leakage Current IGSS na VGS=+20V, VDS=0V, Tvj =25 o C -100 VGS=-15V, VDS=0V, Tvj =25 o C Drain Source on-state Voltage VDS(on) V ID=600A, VGS=15V, Tvj =25 o C TBD 3.6 TBD ID=600A, VGS=15V, Tvj =150 o C Gate Source Threshold Voltage VGS(th) V TBD 3.0 TBD VDS=10V, ID=600mA, Tvj =25 o C Input Capacitance Ciss nf VDS=10V, VGS=0V, f=100khz, Tvj =25 o C Internal Gate Resistance Rg(int) Ω VDS=10V, VGS=0V, f=100khz, Tvj =25 o C Switching Times Rise Time tr VDD=1,800V, ID=600A Turn On Delay Time td(on) Ls=40nH s Fall Time tf RG(on/off)= 1.5/2.2Ω (2) Turn Off Delay Time td(off) VGS=+15/-10V, Tvj =150 o C Source Drain Voltage VSD V Is=600A, VGS=+15V, Tvj =25 o C TBD 3.3 TBD Is=600A, VGS=+15V, Tvj =150 o C Is=600A, VGS=-10V, Tvj =25 o C TBD 6.7 TBD Is=600A, VGS=-10V, Tvj =150 o C Reverse Recovery Time trr s VDD=1,800V, IS=600A, Ls =40nH Tvj =150 o C,RG(on/off)=1.5/2.2Ω Turn-on Loss per Pulse Eon J/P VDD=1,800V, ID=600A, Ls =40nH Turn-off Loss per Pulse Eoff J/P RG(on/off)=1.5/2.2Ω (2) Reverse Recovery Loss per Pulse Err J/P VGS=+15/-10V, Tvj =150 o C Stray Inductance Module LSCE nh Between D1(main) and S2(main) NTC-Thermis Resistance R25 kω Tc=25 o C tor Deviation R/R % -5-5 Tc=25 o C Thermal MOSFET Rth(j-c) - - K/W Impedance Junction to case Contact Thermal Impedance Rth(c-f) K/W Case to fin (per 1 arm) Notes: (2) R G value is a test condition value for evaluation, not recommended value. Please, determine the suitable R G value by measuring switching behavior and checking results with the respective SOA. * Please contact our representatives at order. * For improvement, specifications are subject to change without notice. * For actual application, please confirm this spec sheet is the newest revision. * ELECTRICAL CHARACTERISTIC items shown in above table are according to IEC and IEC
2 SiC MODULE Spec.No.IGBT-SP-18021R0 P 2 OUTLINE DRAWING(unit in mm) 1 : D1 2 : D2S1 3 : S2 4 : D1AUX 5 : G1 6 : S1AUX 7 : G2 8 : S2AUX 9 : T 10 : D2AUX 11 : S2main Weight: 770(g) Terminal Number Circuit Diagram
3 SiC MODULE Spec.No.IGBT-SP-18021R0 P 3
4 SiC MODULE Spec.No.IGBT-SP-18021R0 P 4
5 SiC MODULE Spec.No.IGBT-SP-18021R0 P 5
6 SiC MODULE Spec.No.IGBT-SP-18021R0 P 6 HITACHI POWER SEMICONDUCTORS Notices 1. The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact Hitachi sales department for the latest version of this data sheets. 2. Please be sure to read "Precautions for Safe Use and Notices" in the individual brochure before use. 3. In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, life-support-related medical equipment, fuel control equipment and various kinds of safety equipment), safety should be ensured by using semiconductor devices that feature assured safety or by means of users fail-safe precautions or other arrangement. Or consult Hitachi s sales department staff. 4. In no event shall Hitachi be liable for any damages that may result from an accident or any other cause during operation of the user s units according to this data sheets. Hitachi assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in this data sheets. 5. In no event shall Hitachi be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 6. No license is granted by this data sheets under any patents or other rights of any third party or Hitachi Power Semiconductor Device, Ltd. 7. This data sheets may not be reproduced or duplicated, in any form, in whole or in part, without the expressed written permission of Hitachi Power Semiconductor Device, Ltd. 8. The products (technologies) described in this data sheets are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety not are they to be applied to that purpose by their direct purchasers or any third party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations. For inquiries relating to the products, please contact nearest overseas representatives that is located Inquiry portion on the top page of a home page. Hitachi power semiconductor home page address
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