CONFIDENTIAL TENTATIVE Spec. =UNCONTROLLED=

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2 SiC Power Module BSM8DPC / < Specifications (Precautions and Prohibitions) > Precaution for Mounting / Circuit board design ) When a highly active halogenous (chlorine, bromine, etc.) flux is used, the remainder of flux may negatively affect product performance and reliability. ) In principle, the hand soldering method must be used to signal pin. 3) Do not apply force to a power terminal or signal terminal more than needed. Thereby, faults, such as disconnection, may be caused. 4) When you attach a module to the radiator, please apply the thermal paste for heat conductions. Precautions Regarding Application Examples and External Circuits ) If change is made to the constant of an external circuit, allow a sufficient margin due to variations of the characteristics of the products and external components, including transient characteristics, as well as static characteristics. ) The application examples, their constants, and other types of information contained herein are applicable only when the products are used in accordance with standard methods. Therefore, if mass production is intended, sufficient consideration to external conditions must be made. Precaution for Electrostatic This product is Electrostatic sensitive product, which may be damaged due to Electrostatic discharge. Please take proper caution during manufacturing and storing so that voltage exceeding Product maximum rating won't be applied to products. Please take special care under dry condition (e.g. Grounding of human body / equipment / solder iron, isolation from charged objects, setting of Ionizer, friction prevention and temperature / humidity control). Precaution for Storage / Transportation ) Product performance and soldered connections may deteriorate if the products are stored in the following places: [a] Where the products are exposed to sea winds or corrosive gases, including Cl, HS, NH3, SO, and NO [b] Where the temperature or humidity exceeds those recommended by the Company Temperature: 4, Humidity 3% 8% (Put condition for individual product) [c] Storage in direct sunshine or condensation [d] Storage in high Electrostatic ) Store / transport cartons in the correct direction, which is indicated on a carton as a symbol. Otherwise leads may occur due to excessive stress applied when dropping of a carton.

3 SiC Power Module BSM8DPC 3/ Precaution for disposition When disposing products please dispose them properly with an industry waste company. Prohibitions Regarding Industrial Property ) These Specifications contain information related to the ROHM industrial property. Any use of them other than pertaining to the usage of appropriate products is not permitted. Duplication of these Specifications and its disclosure to a third party without the Company s permission is prohibited. ) Information and data on products, including application examples, contained in these specifications are simply for reference; the Company does not guarantee any industrial property rights, intellectual property rights, or any other rights of a third party regarding this information or data. Accordingly, the Company does not bear any responsibility for [a] infringement of the intellectual property rights of a third party [b] any problems incurred by the use of the products listed herein. 3) The Company prohibits the purchaser of its products to exercise or use the intellectual property rights, industrial property rights, or any other rights that either belong to or are controlled by the Company, other than the right to use, sell, or dispose of the products. Other Matters ) Please sign these Specifications and return one copy to the Company. If a copy is not returned within three months after the issued date specified on the front page of these specifications, the Company will consider the Specifications accepted. ) When you evaluate the performance of the products, be sure to; use the products within the absolute maximum rating and apply circuit protection devices to shut down over current take adequate safety measure against injury or damage to your property caused by unexpected malfunction of the samples. At worse, the products may explode and may cause serious damage including that to human life, even when you treat them properly 3) If any matter related to these Specifications needs to be clarified, discussions shall be held promptly between the two parties concerned to determine the issue.

4 SiC Power Module BSM8DPC 4/ TABLE. Part No. p.. Structure p. 3. Applications p. 4. Outline and pin layout p.. Circuit diagram p.. Maximum ratings p. 7. Electrical characteristics p.7~

5 SiC Power Module BSM8DPC /.PART NUMBER BSM8DPC.STRUCTURE This product is a half bridge module consisting of SiCDMOS from ROHM. 3.APPLICATION Motor Drive,etc 4.OUTLINE & PIN LAYOUT Unit:mm CIRCUIT DIAGRAM 9 8(N.C) 3,4 Do not connect anything to NC pin. 7(N.C)

6 SiC Power Module BSM8DPC /.MAXIMUM RATING (Tj= ) PARAMETER PIN SYMBOL CONDITIONS RATINGS UNIT DrainSource Voltage DS V DS GS short V Gatesource Voltage (+) GS V GS DS Short V Gatesource Voltage () GS V GS DS Short V Drain Current Note ) DS I D DC (Tc = ) 8 I DRM Pulse (Tc = ) ms Note ) 3 A A Total Power Disspation Note 3) Ptot Tc = (3) W Junction Temperature Tj 4 to Storage Temperature Tstg 4 to Isolation Voltage Visol Terminals to baseplate, f=hz ACmin. Note 4) Vrms Mounting Torque Main Terminals : M screw Mounting to heat shink : M screw N m N m Note ) Case temperature (Tc) is defined on the surface of base plate just under the chips. Note ) Repetition rate should be kept within the range where temperature rise of die should not exceed Tjmax. Note 3) Tj is less than Note 4) Actual measurement is (3V)/sec. in accordance with UL7. * Values in bracket ( ) is tentative.

7 SiC Power Module BSM8DPC 7/ 7. ELECTRICAL CHARACTERISTICS(Tj= ) PARAMETER PIN SYMBOL CONDITIONS Static DrainSource Onstate Valtage DS VDS(on) IC=8A,VGS=8V MIN. RATINGS TYP. MAX. UNIT Tj=.4 V Tj= 3.4 V REMARKS Drain Cutoff Current DS IDSS VDS=V,VGS=V () ua SourceDrain Voltage GateSource Threshold Voltage SD G ー S VSD VGS(th) VGS=V,IS=8A VGS=8V,IS=8A VDS=V,ID=3.mA Tj=. Tj= 4.7 Tj=.4 Tj= 3.4 V (.).7 (4.) V VGS=V,VDS=V (.) ua GateSource G ー S IGSS Leak Current VGS=V,VDS=V (.) ua td(on) VGS(on)=8V ns tr 7 ns Switching trr ID=8A ns characteristics td (off) Rg=.Ω ns tf inductive load ns Input Capacitance Ciss VDS=V,VGS=V,MHz 3 nf JunctiontoCase DMOS(/ module) *Note (.) /W Rth(jc) Thermal Resistance Casetoheat sink Case to heat sink, per module, Rth(cf) Thermal resistance Thermal grease appied *Note.3 /W *Note Measurement of Tc is to be done at the point just beneath the chip. *Note Typical value is measured by using thermally conductive grease of λ=.9w/(m K). *Values in bracket ( ) is tentative. <Wavelength for Switching Test> Eon=Id Vds Eoff=Id Vds trr Vsurge VDS 9% 9% ID % % % % % % % 9% VGS % td(on) tr td(off) tf

8 SiC Power Module BSM8DPC 8/ 8.ELECTRICAL CHARACTERISTIC CURVE (TYP) Output characteristic at (TYP) Drainsource voltage characteristic (TYP) Tj= VGS=V VGS=8V VGS=V VGS=4V VGS=V VGS=V 4 8 Drainsource voltage VDS(V) Tj= Tj= VGS=8V 3 4 Drainsource voltage VDS(V) Drainsource voltage VDS(V) Drainsource voltage characteristic at (TYP) ID=8A ID=A ID=8A ID=4A Gatesource voltage VGS(V) Source current IS(A) Forward characteristic of diode (TYP) VGS=8V VGS=V Tj= Tj= Tj= 4 Sourcedrain voltage VSD(V) Switching time vs drain current at (TYP) Switching time vs drain current at (TYP) Switching time (ns) td(off) tf tr td(on) VGS(on)=8V Rg=.Ω 3 4 Switching time (ns) td(off) tf tr td(on) VGS(on)=8V Rg=.Ω 3 4

9 SiC Power Module BSM8DPC 9/ Switching loss vs drain current at (TYP) Switching loss vs drain current at (TYP) Switching loss (mj) 3 VGS(on)=8V Rg=.Ω Eon Eoff Err 3 4 Switching loss (mj) VGS(on)=8V Rg=.Ω Eon Err Eoff 3 4 Recovery characteristic vs drain current at (TYP) Recovery characteristic vs drain current at (TYP) Recovery time trr(ns) trr Irr VGS(on)=8V Rg=.Ω 3 4 Recovery current Irr(A) Recovery time trr(ns) Irr trr VGS(on)=8V Rg=.Ω 3 4 Recovery current Irr(A) Switching time vs gate resistance at (TYP) Switching time vs gate resistance at (TYP) Switching time (ns) ID=8A VGS(on)=8V td(off) tr tf td(on) Switching time (ns) ID=8A VGS(on)=8V td(off) tf tr td(on) Gate resistance Rg(Ω) Gate resistance Rg(Ω)

10 SiC Power Module BSM8DPC / Switching loss vs gate resistance at (TYP) Switching loss vs gate resistance at (TYP) Switching loss (mj) Eon Eoff ID=8A VGS(on)=8V Err Switching loss (mj) Eon Eoff ID=8A VGS(on)=8V Err Gate resistance Rg(Ω) Gate resistance Rg(Ω) Capacitance vs DrainSource voltage (TYP) Gate charge characteristic (TYP) Capasitance (F).E7.E8.E9.E Tj= VGS=V Ciss Coss Crss.E.. Drainsource voltage VDS(V) Gatesource voltage Vgs(V) ID=8A Tj= Gate charge Qg(nC) NORMALIZED TRANSIENT THERMAL IMPEDANCE TRANSIENT THERMAL IMPEDANCE(TYP) Single Pulse Tc= Per unit base :. /W.... TIME(s) Ron(Ω) Ron vs Tj(TYP) ID=8A VGS=V VGS=4V VGS=V VGS=8V VGS=V 7 7 Tj( )