D AB Z DETAIL "B" DETAIL "A"

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1 QJD1211 Preliminary Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania (724) Split Dual SiC MOSFET Module 1 Amperes/12 Volts Y A AA F D AB Z AC Q DETAIL "B" Q P Q U B H G C M D2 (4-6) G2 (19-2) S2 (17-18) S2 (1-3) Outline Drawing and Circuit Diagram L Dimensions Inches Millimeters A B C D 3.7±.2 94.±.5 E F G H K L M N P R S DETAIL "B" D1 (1-12) G1 (15-16) S1 (13-14) S1 (7-9) Dimensions Inches Millimeters Q R S T U V W X.3.8 Y Z AA.17 Dia. 4.3 Dia. AB.1 Dia. 2.5 Dia. AC.8 Dia. 2.1 Dia. 12/3/14 Rev. 5 T DETAIL "A" N K X E V T W DETAIL "A" Description: Powerex Silicon Carbide MOSFET Modules are designed for use in high frequency applications. Each module consists of two MOSFET Silicon Carbide Transistors with each transistor having a reverse connected fast recovery free-wheel silicon carbide Schottky diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: Junction Temperature: 175 C Silicon Carbide Chips Low Internal Inductance Industry Leading RDS(on) High Speed Switching Low Switching Losses Low Capacitance Low Drive Requirement Fast 1A Free Wheeling Schottky Diode High Power Density Isolated Baseplate Aluminum Nitride Isolation 2 Individual Switches per Module Copper Baseplate RoHS Compliant Applications: Energy Saving Power Systems such as: Fans; Pumps; Consumer Appliances High Frequency Type Power Systems such as: UPS; High Speed Motor Drives; Induction Heating; Welder; Robotics High Temperature Power Systems such as: Power Electronics in Electric Vehicle and Aviation Systems 1

2 QJD Amperes/12 Volts Absolute Maximum Ratings, Tj = 25 C unless otherwise specified Ratings Symbol QJD1211 Units Drain-Source Voltage (G-S Short) VDSS 12 Volts Gate-Source Voltage VGSS -5 / +25 Volts Drain Current (Continuous) at TC = 15 C ID 1 Amperes Drain Current (Pulsed)* ID(pulse) 25 Amperes Maximum Power Dissipation (TC = 25 C, Tj < 175 C) PD 18 Watts Junction Temperature Tj -4 to 175 C Storage Temperature Tstg -4 to 15 C Mounting Torque, M6 Mounting Screws 4 in-lb Module Weight (Typical) 27 Grams V Isolation Voltage VRMS 3 Volts * Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating. 2 12/3/14 Rev. 5

3 QJD Amperes/12 Volts MOSFET Characteristics, Tj = 25 C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Drain-Source Breakdown Voltage V(BR)DSS ID = 5μA, VGS = 12 Volts Zero Gate Voltage Drain Current** IDSS VGS =, VDS = 12V ma Zero Gate Voltage Drain Current** IDSS VGS =, VDS = 12V, Tj = 175 C.4 4. ma Gate Leakage Current IGSS VDS =, VGS = 2V 1.5 µa Gate Threshold Voltage VGS(th) VDS = VGS, ID = 1mA Volts VDS = VGS, ID = 1mA, Tj = 175 C Volts Drain-Source On Resistance RDS(on) ID = 1A, VGS = 2V mω ID = 1A, VGS = 2V, Tj = 175 C 2 32 mω Gate to Source Charge Qgs VDD = 8V, ID = 1A 14 nc Gate to Drain Charge Qgd VDD = 8V, ID = 1A 22 nc Total Gate Charge QG VCC = 8V, IC = 1A, VGS = -5/2V 5 nc Body Diode Forward Voltage VSD IF = 5A, VGS = -5V 4. Volts Input Capacitance Ciss 1.2 nf Output Capacitance Coss VGS =, VDS = 8V, f = 1MHz 1. nf Reverse Transfer Capacitance Crss.1 nf Turn-on Delay Time td(on) VDD = 8V, ID = 1A, 17.2 ns Rise Time tr VGS = -2/2V, 13.6 ns Turn-off Delay Time td(off) RG = 6.8Ω 62 ns Fall Time tf Inductive Load 35.6 ns **Total module leakage includes MOSFET leakage plus reverse Schottky diode leakage. 12/3/14 Rev. 5 3

4 QJD Amperes/12 Volts Reverse Schottky Diode Characteristics, Tj = 25 C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Diode Forward Voltage VFM IF = 1A, VGS = -5V Volts IF = 1A, VGS = -5V, Tj = 175 C Volts Diode Capacitive Charge QC VR = 12V, IF = 1A, di/dt = 4A/μs 55 nc Thermal and Mechanical Characteristics, Tj = 25 C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Thermal Resistance, Junction-to-Case Rth(j-c) MOSFET Part.138 C/W Thermal Resistance, Junction-to-Case Rth(j-c) Diode Part.243 C/W Contact Thermal Resistance Rth(c-s) Per 1/2 Module, Thermal Grease Applied.4 C/W Internal Inductance Lint MOSFET Part 1 nh 4 12/3/14 Rev. 5

5 QJD Amperes/12 Volts TYPICAL OUTPUT CHARACTERISTICS (T j = 25ºC) TYPICAL OUTPUT CHARACTERISTICS (T j = 175ºC) DRAIN CURRENT, I D, (AMPERES) T j = 25 C V GE = 2V DRAIN CURRENT, I D, (AMPERES) V GE = 2V DRAIN-SOURCE VOLTAGE, V DS, (VOLTS) DRAIN-SOURCE VOLTAGE, V DS, (VOLTS) TRANSFER CHARACTERISTICS (TYPICAL) NORMALIZED ON-RESISTANCE VS. TEMPERATURE DRAIN CURRENT, I D, (AMPERES) T j = 25 C T j = 175 C NORMALIZED ON-RESISTANCE V GS = 2V GATE SOURCE VOLTAGE, V GS, (VOLTS) JUNCTION TEMPERATURE, T j, ( C) 12/3/14 Rev. 5 5

6 QJD Amperes/12 Volts CAPACITANCE, C iss, C oss, C rss 5nF 5nF 5pF TYPICAL CAPACITANCE VS. DRAIN-SOURCE VOLTAGE V GS = 2V f = 1MHz C iss C oss C rss GATE-EMITTER VOLTAGE, V GE, (VOLTS) GATE CHARGE VS. V GE I D = 1A 5pF DRAIN-SOURCE VOLTAGE, V DS, (VOLTS) GATE CHARGE, Q G, (nc) FORWARD CURRENT, I F, (μa) FREE-WHEEL SCHOTTKY DIODE FORWARD CHARACTERISTICS (TYPICAL) V f = 25 C V f = 15 C V f = 175 C FORWARD VOLTAGE, V F, (VOLTS) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) Z th = R th (NORMALIZED VALUE) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (MOSFET) Single Pulse T C = 25 C Per Unit Base = R th(j-c) =.138 C/W TIME, (s) /3/14 Rev. 5

7 QJD Amperes/12 Volts NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) Z th = R th (NORMALIZED VALUE) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi) Single Pulse T C = 25 C Per Unit Base = R th(j-c) =.243 C/W TIME, (s) /3/14 Rev. 5 7