Dual N - Channel Enhancement Mode Power MOSFET 4502

Transcription

1 Dual N - Channel Enhancement Mode Power MOSFET DESCRIPTION The uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES RDS(ON) < VGS=4.V RDS(ON) < VGS=V High Power and current handing capability Lead free product is acquired Surface Mount Package Application PWM applications Load switch Power management ABSOLUTE MAXIMUM RATINGS(TA= unless otherwise noted) Parameter Symbol Limit Unit Drain Source Voltage VDS 4 V Gate Source Voltage VGS + V Drain Continuous(Note ) ID( ) A ID( ) A Drain Current Pulsed (Note ) IDM A Maximum Power Dissipation (TA= ) PD W Operating Junction and Storage Temperature Range TJ,TSTG To THERMAL CHARACTERISTICS Thermal Resistance,Junction to Ambient (Note ) RθJA 3 /W

2 Dual N - Channel Enhancement Mode Power MOSFET ELECTRICAL CHARACTERISTICS (TA= unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit OFF CHARACTERISTICS Drain Source Breakdown Voltage BVDSS VGS=V ID=μA 4 V Zero Gate Voltage Drain Current IDSS VDS=4V,VGS=V μa Gate Body Leakage Current IGSS VGS=±V,VDS=V ± na ON CHARACTERISTICS (Note 3) Gate Threshold Voltage VGS(th) VDS=VGS,ID=μA V Drain Source On State Resistance RDS(ON) VGS=4.V, ID=A mω DYNAMIC CHARACTERISTICS (Note4) VGS=V, ID=A Input Capacitance Ciss VDS=V,VGS=V, F=.MHz PF Output Capacitance Coss PF Reverse Transfer Capacitance Crss PF SWITCHING CHARACTERISTICS (Note 4) Turn on Delay Time td(on) VDS=V, VGS=V,RGEN Ω ns Turn on Rise Time tr ns Turn Off Delay Time td(off) ns Turn Off Fall Time tf ns Total Gate Charge Qg VDS=V,ID=A,VGS=4.V nc Gate Source Charge Qgs nc Gate Drain Charge Qgd nc Body Diode Reverse Recovery Time Trr IF=A, di/dt=a/μs ns Body Diode Reverse Recovery Charge Qrr nc DRAIN SOURCE DIODE CHARACTERISTICS Diode Forward Voltage (Note 3) VSD VGS=V,IS=A.8. V NOTES:. Pulse Test: Pulse Width 3µs, Duty Cycle %.. R θja is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.r θjc is guaranteed by design while R θca is determined by the user's board design. R θja shown below for single device operation on FR-4 in still air. mω

3 Dual N - Channel Enhancement Mode Power MOSFET 4 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS V DS =V 4 I D (A) 3 C C 3 4 V GS (Volts) Figure : Transfer Characteristics (Note E) Fig. Typical Output Characteristics V Fig. On Resistance vs. G S Voltage R DS(ON) (mω) V GS GS=4.V =4.V V GS =V Normalized On-Resistance V GS =V I D =A 7 V GS =4.V I D =A R DS(ON) (mω) I D (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) ID=A C I S (A) Temperature (Note E) ( C) Figure 4: On-Resistance vs. Junction 8 Temperature (Note E).E+.E+ 4.E+.E- C.E- C.E-3 C V GS (Volts) Figure : On-Resistance vs. Gate-Source Voltage (Note E).E-4.E V SD (Volts) Figure 6: Body-Diode Characteristics (Note E) 3

4 Dual N - Channel Enhancement Mode Power MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 8 V DS =V I D =A C iss V GS (Volts) 6 4 Capacitance (pf) C oss Q g (nc) Figure 7: Gate-Charge Characteristics C rss 3 V DS (Volts) Figure 8: Capacitance Characteristics. I D (Amps).... R DS(ON) T J(Max) =7 C T C = C DC µs µs µs ms ms Power (W) T J(Max) =7 C T C = C 7... V DS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F).... Pulse Width (s) Figure : Single Pulse Power Rating 8 Junction-to- Case (Note F) Z θjc Normalized Transient Thermal Resistance.. D=T on /T T J,PK =T C +P DM.Z θjc.r θjc R θjc =3 C/W Single Pulse In descending order D=.,.3,.,.,.,., single pulse..... Pulse Width (s) Figure : Normalized Maximum Transient Thermal Impedance (Note F) 4 P D T on T 4

5 Dual N - Channel Enhancement Mode Power MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS I AR (A) Peak Avalanche Current T A = C T A = C T A = C T A = C Power Dissipation (W) Time in avalanche, t A (µs) Figure : Single Pulse Avalanche capability (Note C) 7 7 T CASE ( C) Figure 3: Power De-rating (Note F) 6 Current rating I D (A) 4 3 Power (W) T A = C T CASE ( C) Figure 4: Current De-rating (Note F)... Pulse Width (s) 8 Figure : Single Pulse Power Rating Junction-to- Ambient (Note H) Z θja Normalized Transient Thermal Resistance... D=T on /T T J,PK =T A +P DM.Z θja.r θja R θja = C/W Single Pulse In descending order D=.,.3,.,.,.,., single pulse..... Pulse Width (s) Figure 6: Normalized Maximum Transient Thermal Impedance (Note H) 4 P D T on T

6 Dual N - Channel Enhancement Mode Power MOSFET Package Information 6