SGT190N60SJ /SGF190N60SJ/SGW190N60SJ

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1 SGT19N6SJ /SGF19N6SJ/SGW19N6SJ 6V, 2.5A,.19Ω Features RDS(on) =.19Ω VGS = 1V, ID = 1A Ultra low gate charge ( Typ. Qg = 37nC) Low effective output capacitance 1% avalanche tested RoHS compliant Description The WinMOS MOSFET, SG s 1 st generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based technologies. By utilizing this advanced technology and precise process control, WinMOS provides world class Rsp, superior switching performance and ruggedness. This WinMOS fits the industry s AC-DC SMPS requirements for PFC, server/telecom power, FPD TV power, ATX power, and industrial power applications.

2 Maximum Ratings Parameter Symbol Conditions Value Unit Tc= Continuous drain current Id Tc=1 13 A Pulsed drain current I d,pulse Tc=25 56 Avalanche energy, single pulse Eas Id=6A, VDD=5V 71 mj Avalanche energy, repetitive Ear Id=2A, VDD=5V 1 mj Avalanche current Iar 2 A MOSFET dv /dt ruggedness dv/dt VDS=48V,ID=1A, Tj= V/ns Gate source voltage Vgs static ±2 V AC (f >1 Hz) ±3 V Power dissipation for TO-22FB-3L Ptot Tc=25 22 W Power dissipation for TO-247 Ptot Tc=25 22 W Operating and storage temperature Tj,Tstg -55~15 Thermal Characteristics Parameter Symbol SGT19N6SJ/ SGF19N6DJ/SGW19N6SJ Unit Junction to case RthJC 1.2 /W Junction to ambient RthJA 6.5 /W Soldering temperature, wavesoldering only allowed at leads Tsold 28 SGX19N6SJ Rev /11

3 Electrical Characteristics at Tj=25 Parameter Symbol Conditions Min Typ Max Unit Drain-source Breakdown voltage V(BR)Dss Vgs=V,ID=25uA V Gate threshold voltage Vgs(th) Id=25uA,Vds=Vgs V Zero gate voltage drain current IDSS VDS=6V, Vgs=V Tj=25 VDS=6V, Vgs=V Tj= ua Gate source leakage current Igss Vgs=3V,Vds=V na Drain source on-state resistance R DS(on) Vgs=1V, ID=1A Tj=25 Vgs=1V, ID=1A Tj= Ω Gate resistance Rg f=1 MHz, open drain Ω Dynamic / Switching Characteristics Parameter Symbol Conditions Min Typ Max Unit input capacitance Ciss Output capacitance Coss Vds=1V Vgs=V f=1mhz Reverse transfer capacitance Crss pf Turn on delay time Td(on) rise time Tr Vdd=4V, Vgs=/1V Id=2.5A Turn off delay time Td(off) Rg=3.5ohm ns Fall time Tf Gate to source charge Qgs Gate to drain charge Qgd Vdd=4V,Id=2.5A Gate charge total Qg Vgs= to 1V nc Gate plateau voltage V plateau V SGX19N6SJ Rev /11

4 Drain-Source Diode Characteristics Parameter Symbol Conditions Min Typ Max Unit Maximum Continuous Drain to Source Diode Forward current Isd Tc= A Maximum Pulsed Drain to Source Diode Forward current ISDM Tc= A Drain to Source Diode Forward Voltage VSD VGS=V, ISD=2.5A, TJ =25 C V Reverse Recovery Time Reverse Recovery Charge Peak reverse recovery current Trr ns VDD=6V,VGS=V, Qrr ISD=21A dif/dt = 1A/μs μc TJ =25 C I rrm A SGX19N6SJ Rev /11

5 Typical Performance Characteristics 1 Safe operating area I D=f(V DS); T C=25 C; D = parameter: t 2 Typ. output characteristics 3 Typ. drain-source on-state resistance I D=f(V DS); T j=25 C R DS(on)=f(I D); T j=15 C parameter: V GS parameter: V GS ID (A) V 12V 1V 8V 6V 5.5V 5V 4.5V RDSON(Ω) V 5V 5.5V 6V 6.5V 7V 7.5V 1V 2V VDS (V) ID(A) SGX19N6SJ Rev /11

6 4 Drain-source on-state resistance 5 Typ. transfer characteristics R DS(on)=f(T j); I D=1 A; V GS=1 V I D=f(V GS); V DS >2 I D R DS(on)max parameter: T j RDSON(Ω ) ID (A) tc( ) VGS (V) 6 Typ. gate charge 7 Forward characteristics of reverse diode V GS=f(Qgate); I D=5.5 A pulsed I D=f(V SD) parameter: V DD parameter: T j 1 24V 48V VGS (V) 5 VSD(V) QG (nc) ID (A) SGX19N6SJ Rev /11

7 8 Drain-source breakdown voltage 9 Typ. capacitances V BR(DSS)=f(T j); I D=.25 ma C =f(v DS); V GS= V; f =1 KHz BVDSS (norm ) Capacltance (pf) Crss Cos s Ci ss TJ ( ) VDS (V) SGX19N6SJ Rev /11

8 Mechanical Dimensions TO-22-F-3L SGX19N6SJ Rev /11

9 Mechanical Dimensions TO-22-FB-3L SGX19N6SJ Rev /11

10 Mechanical Dimensions TO-247 SYMPOL mm mm mm SYMPOL SYMPOL MIN NOM MAX MIN NOM MAX MIN NOM MAX A E ΦP A E Q A E S 6.15BSC b E T b e 5.44BSC U b h.5.2 θ c L θ D L1 4.3 θ D ΦP θ D ΦP1 7.3 SGX19N6SJ Rev /11

11 Revision History Version Update date Revised Content Revised by Confirmed by V Original ZhangFeng Alan V Modify the value of EAS ZhangFeng Alan V Add TO-22F-3L Package ZhangFeng Alan SGX19N6SJ Rev /11

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