ALL Switch GaN Power Switch - DAS V22N65A
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- Buck Sims
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1 Description ALL-Switch is a System In Package (SIP) switch. A Normally-Off safe function is integrated within the package, designed according to SmartGaN topology, an innovation by VisIC Technologies. ALL- Switch combines a patented, high-density, lateral-layout GaN power transistor, into a product with extremely low RDS(ON), exceptionally fast switching performance and a conveniently small footprint. It is very effective in applications requiring high efficiency, high power density and low cost. Enable Circuit is responsible for operation sequence of the All Switch device during a system start up and shutdown. It verifies the proper status of the gate driver and supply voltage. At normal switching operation mode, it has no impact on the switching performances of the GaN transistor. Key features Ultra-fast switching Kelvin connection Normally-Off High power density Fully isolated package (2.5KV) High noise immunity Driven by standard 12V MOSFET driver Top cooling Applications Solar Inverter AC-DC Power Supply AC motors Battery chargers Automotive Laser driver Pin Key Performance s Value VDS (V) 650 RDS(ON) (mω) 22 QG (nc) 21 ID,pulse(A) 180 ID (A) 80 Package Outline Pin Function Pin Function 1 Source 7 Drain 2 Activation signal 8 NC 3 Com signal 9 NC 4 Gate 10 NC 5 Com power 11 NC 6 Enable 12 NC Pins 8-12 are absolutely forbidden to apply any signals 110
2 Maximum ratings (Tc =25ºC unless otherwise specified) Continuous drain current Symbol ID Values Min Typical Max Pulsed drain current 1) ID,pulse A Unit A Conditions TC =25 C TC =100 C Gate source voltage 2) VGS V Power dissipation PTOT W Operating and storage temperature Tj,Tstg TC C Continuous reverse current Is A Reverse pulse current 1) Is,pulse A Thermal characteristics Thermal resistance, junctioncase Thermal resistance, junction - ambient Symbol Values Min Typical 1) Duty cycle =10% and pulse width limited by Tjmax 2) See Typical Operating Circuit, V GS defined between terminals 4&1 Max Unit RθJC CW RθJA CW Soldering peak temperature Tsold C Conditions Junction to top thermal pad from case for 10s 210
3 Static Electrical characteristics (Tc =25 C unless otherwise specified) Symbol Values Min Typical 1) After applying Activation signal 2) Refers to driver GND, see typical operating circuit. Threshold voltage defined as Vth=VDout-7.5V=12-7.5=4.5V 3) GaN transistor 4) VDout Driver output voltage, 12V Max Unit Conditions Drain-source breakdown voltage V(BR)DS V VGS= -12V, Id= 1mA Gate threshold voltage 1)2) Vth V ID=1mA, VDD=12V Drain source leakage current 1) IDSS Gate leakage current 3) IGSS na Gate resistance RG Ω f =1Mhz Drain-source on state resistance Reverse voltage drop- GaN non conductive Reverse voltage drop- GaN conductive RDS(ON) VR VR µa mω 4) V Dout =0V, VGS= -12V VDS= 650V T j=25 C 4) V Dout = 0V, VGS= -12V V DS= 650V T j=150 C VDS= 400V VG= 0V, VGS= -12V VG=12V ID=35A Tj =25 C VG=12V ID=35A Tj =150 C ID=10A Tj =25 C V ID=10A Tj =150 C ID=10A Tj =25 C V ID=10A Tj =150 C Reverse recovery time trr ns Reverse recovery charge Qrr nc Output Charge Qoss nc VG=0V VDS=400V Activation signal 2) V(As,En) V VDD= -12V Dynamic Input capacitance Ciss Output capacitance Coss pf Reverse transfer capacitance Crss Effective Output Capacitance, Energy Related CO(ER) pf Turn-on delay time td(on) Fall time tf Turn-off delay time td(off) ns Rise time tr f=1mhz VG=0V VDS=400V VG=0V VDS=0 to 400V VDS=400V VG=0-12V RG=2.2 Ω ID=35A 310
4 Gate charge characteristics Electrical characteristics (Tc =25ºC unless otherwise specified) Symbol Values Min Typical Max Gate to source charge 1) QGS Gate to drain charge 1) QGD Total gate charge 1) QG Gate plateau voltage 1) Vplateau 6-7 V Case to drain Capacitance Unit Conditions nc VGS 2) =0V to 10V VDS=400V ID=30A Capacitance CC MHz 0.1V RMS Pin 2 Activation signal 2) Pin Characteristics Symbol 1) After applying Activation signal 2) Refers to driver GND, see typical operating circuit 3) Refers to Pin 1 Values Min Typical Max Disable voltage Pin Enable voltage Pin Pin 3 Com signal 3) Unit Conditions V VDS=400V Voltage at disable mode Pin 3 8 VDS V >20V Voltage at Enable mode Pin V31=Id*0.002 Pin 4 Gate 2) Gate Voltage for non-conducting mode Pin V VDS=400V Gate Voltage for conducting mode Pin Pin 5 Com Power 2) Pin 6 Enable must be connected to pin2 Pin V Package Outlines 410
5 ical Operating Circuit Typ 510
6 610
7 Electrical characteristics diagrams Fig.1: Power dissipation Fig.2: Drain-source on-state resistance Fig. 3: Gate charge Fig.4:Typical capacitances 710
8 Fig. 5: Typical Coss stored energy Figure 6: Switching Energy vs Drain Current including diode commutation energy Fig.7: Forward and Reverse conductivity Fig.8. Safety Operation Area (SOA) 810
9 Fig.9: Transient Thermal Impedance Fig.10: Switching time vs. Rg (external) 910
10 Circuit Used for Switching Energy measurement for inductive load Switching Time Waveforms Important Notice VisIC Technologies reserve the right to make corrections, enhancements, improvements and other changes to its semiconductor products, latest issue, and to discontinue any product. Buyers should obtain the latest relevant information before placing orders and should verify that such information is current and complete. Unless expressly approved in writing by an authorized representative of VisIC technologies, VisIC technologies components are not designed or tested for use in, and is not intended for use in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, air traffic control systems, weapons systems, authorized or warranted for use in lifesaving, life sustaining, military, or space applications, nor in products or systems where failure or malfunction may result in personal injury, death, or property or environmental damage. The information given in this document shall not in any event be regarded as a guarantee of performance. VisIC Technologies hereby disclaims any or all warranties and liabilities of any kind, including but not limited to warranties of non-infringement of intellectual property rights. All other brand and product names are trademarks or registered trademarks of their respective owners. Information provided herein is intended as a guide only and is subject to change without notice. The information contained herein or any use of such information does not grant, explicitly, or implicitly, to any party any patent rights, licenses, or any other intellectual property rights. All rights reserved. 1010
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Automotive-grade N-channel 950 V, 0.280 Ω typ., 17.5 A MDmesh K5 Power MOSFET in a TO-247 package Datasheet - production data Features Order code V DS R DS(on) max. I D P TOT STW22N95K5 950 V 0.330 Ω 17.5
More informationSMC7002ESN. Single N-Channel MOSFET FEATURES VDS = 60V, ID = 0.3A DESCRIPTION APPLICATIONS PART NUMBER INFORMATION
SMC7ESN Single N-Channel MOSFET DESCRIPTION SMC7E is the N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced trench technology devices are well suited
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TP65H070L Series 650V GaN FET PQFN Series Preliminary Description The TP65H070L 650V, 72mΩ Gallium Nitride (GaN) FET are normally-off devices. It combines state-of-the-art high voltage GaN HEMT and low
More informationFeatures. Description. Table 1: Device summary Order code Marking Package Packaging SCT50N120 SCT50N120 HiP247 Tube
Silicon carbide Power MOSFET 1200 V, 65 A, 59 mω (typ., TJ=150 C) in an HiP247 package Datasheet - production data Features Very tight variation of on-resistance vs. temperature Very high operating junction
More informationAM2300. AiT Semiconductor Inc. APPLICATION ORDER INFORMATION PIN CONFIGURATION
DESCRIPTION The is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density. Advanced trench technology to provide excellent RDS(ON). FEATURES 20V/4.0A, RDS(ON)
More informationDual N - Channel Enhancement Mode Power MOSFET 4502
Dual N - Channel Enhancement Mode Power MOSFET 4 344 DESCRIPTION The uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or
More informationSMC3332S. Single N-Channel MOSFET FEATURES VDS = 30V, ID = 6A DESCRIPTION PART NUMBER INFORMATION APPLICATIONS
SMC333S Single N-Channel MOSFET DESCRIPTION SMC333 is the N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced trench technology devices are well suited
More informationSMC2334SN. Single N-Channel MOSFET FEATURES VDS = 20V, ID = 5.7A DESCRIPTION PART NUMBER INFORMATION APPLICATIONS
SMCSN Single N-Channel MOSFET DESCRIPTION SMC is the N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced trench technology devices are well suited
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STH275N8F7-2AG, STH275N8F7-6AG Automotive-grade N-channel 80 V, 1.7 mω typ., 180 A, STripFET F7 Power MOSFETs in H²PAK-2 and H²PAK-6 Datasheet - production data Features Order code VDS RDS(on) max. ID
More informationFeatures. Description. AM15572v1_no_tab. Table 1: Device summary Order code Marking Package Packing STWA48N60DM2 48N60DM2 TO-247 long leads Tube
N-channel 600 V, 0.065 Ω typ., 40 A MDmesh DM2 Power MOSFET in a TO-247 long leads package Datasheet - production data Features Order code VDS RDS(on) max. ID STWA48N60DM2 600 V 0.079 Ω 40 A Fast-recovery
More informationFeatures. Description. Table 1: Device summary Order code Marking Package Packing STL140N6F7 140N6F7 PowerFLAT 5x6 Tape and reel
N-channel 60 V, 2.4 mω typ., 140 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 package Datasheet - production data Features Order code VDS RDS(on) max. ID PTOT STL140N6F7 60 V 2.8 mω 140 A 125 W Among
More informationN-channel 650 V, 0.37 Ω typ., 10 A MDmesh M2 Power MOSFET in a TO-220FP ultra narrow leads package. Features. Description.
N-channel 650 V, 0.37 Ω typ., 10 A MDmesh M2 Power MOSFET in a TO-220FP ultra narrow leads package Datasheet - production data Features Order code VDS RDS(on) max ID STFU13N65M2 650 V 0.43 Ω 10A 1 2 3
More informationFeatures. Description. Table 1: Device summary Order code Marking Package Packing STD30NF06LAG D30NF06L DPAK Tape and reel
Automotive-grade N-channel 60 V, 0.022 Ω typ., 35 A STripFET II Power MOSFET in a DPAK package Datasheet - production data Features Order code VDS RDS(on) max. ID STD30NF06LAG 60 V 0.028 Ω 35 A AEC-Q101
More informationFeatures. Description. AM15572v1_no_tab. Table 1: Device summary Order code Marking Package Packing STF4N90K5 4N90K5 TO-220FP Tube
N-channel 900 V, 1.90 Ω typ., 4 A MDmesh K5 Power MOSFET in a TO-220FP package Datasheet - production data Features Order code VDS RDS(on) max. ID STF4N90K5 900 V 2.10 Ω 4 A TO-220FP Figure 1: Internal
More informationSymbol Parameter Rating Units VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage ±20 V
% EAS Guaranteed Green Device Available Super Low Gate Charge Excellent CdV/dt effect decline Advanced high cell density Trench technology Product Summary BVDSS RDSON ID 3V mω A Description TO Pin Configuration
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1 3 FEATURES RDS(ON) 110mΩ@VGS=-4.5V RDS(ON) 150mΩ@VGS=-2.5V Super high density cell design for extremely low RDS(ON) APPLICATIONS Power Management in Note book Portable Equipment Battery Powered System
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650V GaN FET in TO-247 (source tab) Description The TPH3205WSB 650V, 49mΩ Gallium Nitride (GaN) FET is a normally-off device. It combines state-of-the-art high voltage GaN HEMT and low voltage silicon
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Automotive silicon carbide Power MOSFET 650 V, 100 A, 22 mω (typ., TJ=150 C), in an HiP247 package HiP247 Figure 1: Internal schematic diagram 1 2 3 Features Datasheet - preliminary data Designed for automotive
More informationThis product is designed to ESD immunity < 200V*, so please take care when handling. * Machine Model
1HN4CH Power MOSFET V, 8Ω, ma, Single N-Channel http://onsemi.com Features 4V drive Halogen free compliance Specifications Absolute Maximum Ratings at Ta = C Parameter Symbol Conditions Value Unit Drain
More informationSymbol Parameter Rating Units VDSS Drain-Source Voltage -30 V VGSS Gate-Source Voltage ±20 V TC=25 C -22 A
SMC22H Single P-Channel MOSFET DESCRIPTION SMC22 is the P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored
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Ordering number : ENA2289 FW276 N-Channel Power MOSFET 450V, 0.7A, 12.1Ω, Dual SOIC8 http://onsemi.com Features On-resistance RDS(on)=9.3Ω(typ.) Input capacitance Ciss=55pF(typ.) 10V drive Nch+Nch dual
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N-channel 800 V, 0.23 Ω typ., 16 A MDmesh K5 Power MOSFET in a TO-220FP package Datasheet - production data Features Order code VDS RDS(on) max. ID PTOT STF23N80K5 800 V 0.28 Ω 16 A 35 W TO-220FP Figure
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SMC333SN Single P-Channel MOSFET DESCRIPTION SMC333 is the P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced trench technology devices are well suited
More informationFeatures. Description. Table 1: Device summary Order code Marking Package Packaging STW45NM50 W45NM50 TO-247 Tube
N-channel 500 V, 0.08 Ω typ., 45 A MDmesh Power MOSFET in a TO-247 package Datasheet - production data Features Order code VDS RDS(on) max ID 500 V 0.1 Ω 45 A TO-247 1 3 2 100% avalanche tested High dv/dt
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Complementary MOSFET DESCRIPTION The SMC59 is the N+P-Channel Complementary mode power field effect transistors are using trench DMOS technology. advanced trench technology to provide excellent RDS(ON).
More informationFeatures. Description. Table 1: Device summary Order code Marking Package Packing STW70N60DM2 70N60DM2 TO-247 Tube
N-channel 600 V, 0.037 Ω typ., 66 A MDmesh DM2 Power MOSFET in a TO-247 package Datasheet - production data Features Order code VDS RDS(on) max. ID PTOT STW70N60DM2 600 V 0.042 Ω 66 A 446 W TO-247 1 3
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P-channel -30 V, 0.01 Ω typ., -12.5 A, STripFET H6 Power MOSFET in an SO-8 package Datasheet - production data Features Order code VDS RDS(on) max ID STS10P3LLH6-30 V 0.012 Ω -12.5 A Very low on-resistance
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Automotive-grade dual N-channel 40 V, 8 mω typ., 15 A STripFET F5 Power MOSFET in a PowerFLAT 5x6 DI Datasheet - production data Features Order code VDS RDS(on) max. ID STL15DN4F5 40 V 9 mω 15 A Designed
More informationFeatures. Description. Table 1: Device summary Order code Marking Package Packing STL10N65M2 10N65M2 PowerFLAT 5x6 HV Tape and reel
N-channel 650 V, 0.85 Ω typ., 4.5 A MDmesh M2 Power MOSFET in a PowerFLAT 5x6 HV package Datasheet - production data Features Order code VDS RDS(on) max. ID STL10N65M2 650 V 1.00 Ω 4.5 A 1 2 3 4 PowerFLAT
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N-channel 60 V, 1.2 mω typ., 120 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 package Datasheet - production data Features Order code VDS RDS(on) max. ID STL220N6F7 60 V 1.4 mω 120 A Among the lowest
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