ALL Switch GaN Power Switch - DAS V22N65A

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1 Description ALL-Switch is a System In Package (SIP) switch. A Normally-Off safe function is integrated within the package, designed according to SmartGaN topology, an innovation by VisIC Technologies. ALL- Switch combines a patented, high-density, lateral-layout GaN power transistor, into a product with extremely low RDS(ON), exceptionally fast switching performance and a conveniently small footprint. It is very effective in applications requiring high efficiency, high power density and low cost. Enable Circuit is responsible for operation sequence of the All Switch device during a system start up and shutdown. It verifies the proper status of the gate driver and supply voltage. At normal switching operation mode, it has no impact on the switching performances of the GaN transistor. Key features Ultra-fast switching Kelvin connection Normally-Off High power density Fully isolated package (2.5KV) High noise immunity Driven by standard 12V MOSFET driver Top cooling Applications Solar Inverter AC-DC Power Supply AC motors Battery chargers Automotive Laser driver Pin Key Performance s Value VDS (V) 650 RDS(ON) (mω) 22 QG (nc) 21 ID,pulse(A) 180 ID (A) 80 Package Outline Pin Function Pin Function 1 Source 7 Drain 2 Activation signal 8 NC 3 Com signal 9 NC 4 Gate 10 NC 5 Com power 11 NC 6 Enable 12 NC Pins 8-12 are absolutely forbidden to apply any signals 110

2 Maximum ratings (Tc =25ºC unless otherwise specified) Continuous drain current Symbol ID Values Min Typical Max Pulsed drain current 1) ID,pulse A Unit A Conditions TC =25 C TC =100 C Gate source voltage 2) VGS V Power dissipation PTOT W Operating and storage temperature Tj,Tstg TC C Continuous reverse current Is A Reverse pulse current 1) Is,pulse A Thermal characteristics Thermal resistance, junctioncase Thermal resistance, junction - ambient Symbol Values Min Typical 1) Duty cycle =10% and pulse width limited by Tjmax 2) See Typical Operating Circuit, V GS defined between terminals 4&1 Max Unit RθJC CW RθJA CW Soldering peak temperature Tsold C Conditions Junction to top thermal pad from case for 10s 210

3 Static Electrical characteristics (Tc =25 C unless otherwise specified) Symbol Values Min Typical 1) After applying Activation signal 2) Refers to driver GND, see typical operating circuit. Threshold voltage defined as Vth=VDout-7.5V=12-7.5=4.5V 3) GaN transistor 4) VDout Driver output voltage, 12V Max Unit Conditions Drain-source breakdown voltage V(BR)DS V VGS= -12V, Id= 1mA Gate threshold voltage 1)2) Vth V ID=1mA, VDD=12V Drain source leakage current 1) IDSS Gate leakage current 3) IGSS na Gate resistance RG Ω f =1Mhz Drain-source on state resistance Reverse voltage drop- GaN non conductive Reverse voltage drop- GaN conductive RDS(ON) VR VR µa mω 4) V Dout =0V, VGS= -12V VDS= 650V T j=25 C 4) V Dout = 0V, VGS= -12V V DS= 650V T j=150 C VDS= 400V VG= 0V, VGS= -12V VG=12V ID=35A Tj =25 C VG=12V ID=35A Tj =150 C ID=10A Tj =25 C V ID=10A Tj =150 C ID=10A Tj =25 C V ID=10A Tj =150 C Reverse recovery time trr ns Reverse recovery charge Qrr nc Output Charge Qoss nc VG=0V VDS=400V Activation signal 2) V(As,En) V VDD= -12V Dynamic Input capacitance Ciss Output capacitance Coss pf Reverse transfer capacitance Crss Effective Output Capacitance, Energy Related CO(ER) pf Turn-on delay time td(on) Fall time tf Turn-off delay time td(off) ns Rise time tr f=1mhz VG=0V VDS=400V VG=0V VDS=0 to 400V VDS=400V VG=0-12V RG=2.2 Ω ID=35A 310

4 Gate charge characteristics Electrical characteristics (Tc =25ºC unless otherwise specified) Symbol Values Min Typical Max Gate to source charge 1) QGS Gate to drain charge 1) QGD Total gate charge 1) QG Gate plateau voltage 1) Vplateau 6-7 V Case to drain Capacitance Unit Conditions nc VGS 2) =0V to 10V VDS=400V ID=30A Capacitance CC MHz 0.1V RMS Pin 2 Activation signal 2) Pin Characteristics Symbol 1) After applying Activation signal 2) Refers to driver GND, see typical operating circuit 3) Refers to Pin 1 Values Min Typical Max Disable voltage Pin Enable voltage Pin Pin 3 Com signal 3) Unit Conditions V VDS=400V Voltage at disable mode Pin 3 8 VDS V >20V Voltage at Enable mode Pin V31=Id*0.002 Pin 4 Gate 2) Gate Voltage for non-conducting mode Pin V VDS=400V Gate Voltage for conducting mode Pin Pin 5 Com Power 2) Pin 6 Enable must be connected to pin2 Pin V Package Outlines 410

5 ical Operating Circuit Typ 510

6 610

7 Electrical characteristics diagrams Fig.1: Power dissipation Fig.2: Drain-source on-state resistance Fig. 3: Gate charge Fig.4:Typical capacitances 710

8 Fig. 5: Typical Coss stored energy Figure 6: Switching Energy vs Drain Current including diode commutation energy Fig.7: Forward and Reverse conductivity Fig.8. Safety Operation Area (SOA) 810

9 Fig.9: Transient Thermal Impedance Fig.10: Switching time vs. Rg (external) 910

10 Circuit Used for Switching Energy measurement for inductive load Switching Time Waveforms Important Notice VisIC Technologies reserve the right to make corrections, enhancements, improvements and other changes to its semiconductor products, latest issue, and to discontinue any product. Buyers should obtain the latest relevant information before placing orders and should verify that such information is current and complete. Unless expressly approved in writing by an authorized representative of VisIC technologies, VisIC technologies components are not designed or tested for use in, and is not intended for use in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, air traffic control systems, weapons systems, authorized or warranted for use in lifesaving, life sustaining, military, or space applications, nor in products or systems where failure or malfunction may result in personal injury, death, or property or environmental damage. The information given in this document shall not in any event be regarded as a guarantee of performance. VisIC Technologies hereby disclaims any or all warranties and liabilities of any kind, including but not limited to warranties of non-infringement of intellectual property rights. All other brand and product names are trademarks or registered trademarks of their respective owners. Information provided herein is intended as a guide only and is subject to change without notice. The information contained herein or any use of such information does not grant, explicitly, or implicitly, to any party any patent rights, licenses, or any other intellectual property rights. All rights reserved. 1010

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