Symbol Parameter Typ Max Units Thermal Resistance Junction to Ambient C t 10s 62 Thermal Resistance Junction to Ambient C

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1 SMC93M Dual P-Channel MOSFET DESCRIPTION SMC93 is the Dual P-Channel enhancement mode power field effect transistors are using trench DMOS technology.this advanced technology has been especially tailored to minimize on-state resistance.this device is ideal for load switch applications. PART NUMBER INFORMATION SMC 93 M - TR G a b c d e a : Company name. b : Product Serial number. c : Package code M:SOP-8 d : Handling code TR:Tape&Reel e : Green produce code G:RoHS Compliant FEATURES VDS = -3V, ID = -8.5A RDS(ON) =5mΩ(Typ.)@VGS = -V RDS(ON) =9mΩ(Typ.)@VGS = -.5V Fast switch High power and current handling capability APPLICATIONS High Frequency Point-of-Load Synchronous DC-DC Power System Load Switch D D D D D D G S G S G S G S SOP-8 ABSOLUTE MAXIMUM RATINGS (TA = 5 C Unless otherwise noted ) Symbol Parameter Rating Units VDSS Drain-Source Voltage -3 V VGSS Gate-Source Voltage ±5 V -8.5 A ID Continuous Drain Current TA=7 C -.8 A IDM Pulsed Drain Current A -3 A IAS Avalanche Current A F -3 A EAS Single Pulse Avalanche energy L=.mH A F 5 mj PD Power Dissipation B W TA=7 C.3 W TJ Operation Junction Temperature -55/5 C TSTG Storage Temperature Range -55/5 C THERMAL RESISTANCE Symbol Parameter Typ Max Units RθJA Thermal Resistance Junction to Ambient C t s Thermal Resistance Junction to Ambient C 85 Steady-State RθJC Thermal Resistance Junction to Case C 35 C/W SMC93M Rev.A.

2 ELECTRICAL CHARACTERISTICS(TA = 5 C Unless otherwise noted ) SMC93M Symbol Parameter Condition Min Typ Max Unit Static Parameters BVDSS Drain-Source Breakdown Voltage VGS =V,ID =-5μA -3 V VGS(th) Gate Threshold Voltage VDS =VGS,ID =-5μA V IGSS Gate Leakage Current VDS =V,VGS=±V ± na IDSS Zero Gate Voltage Drain Current VDS =-3V,VGS =V TJ =5 C - VDS =-V,VGS =V TJ =75 C - μa Drain-source On-Resistance D VGS =-V,ID=-8.5A 5 8 VGS =-.5V,ID=-5.A 9 3 mω Gfs Forward Transconductance VDS =-V,ID=-A.5 S RDS(ON) Diode Characteristics VSD Diode Forward Voltage B IS=-A,VGS=V V IS Continuous Source Current -.3 A trr Body Diode Revese Recovery Time 3.5 ns IS=-8.5A, dl/dt=a/μs Qrr Body Diode Revese Recovery Charge nc Dynamic and Switching Parameters Qg Total Gate Charge (V) Qg Total Gate Charge (.5V) VDS =-5V,VGS =-V nc Qgs Gate-Source Charge ID =-8,5A 8. Qgd Gate-Drain Charge.. Ciss Input Capacitance 59 3 VDS =-5V,VGS =V Coss Output Capacitance pf f =MHz Crss Reverse Transfer Capacitance 7 VGS=V, VDS=V, Rg Gate Resistance Ω F=MHZ td(on) 9. Turn-On Time E tr VDD=-5V, VGEN=-V,.8 ns td(off) RG=3Ω, ID=-A 58 Turn-Off Time E tf.5 Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. A.Pulse width limited by maximum junction temperature TJ(MAX)=5 C (initial temperature TJ=5 C). B.The TJ(MAX)=5 C, using junction-to-ambient thermal resistance. C.Surface mounted on FR- board using sq in pad, oz Cu, in a still air environment with. D. The data tested by pulsed, pulse width 3uS, duty cycle % E. Pulsed width limited by maximum junction temperature. F. The EAS data shows Max. The products and product specifications contained herein are subject to change without notice to improve performance characteristics. Consult us, or our representatives before use, to confirm that the information in this datasheet is up to date We assume no responsibility for any infringement of patents, patent rights, or other rights arising from the use of any information and circuitry in this datasheet. SMC93M Rev.A.

3 Normalized Threshold Voltage Ptot-Power(W) -VGS(V) Capacitance(pF) RDS(ON)(mΩ) SMC93M TYPICAL CHARACTERISTICS 3 3 -V -V -5V VGS=-.5V 3 8 VGS=-.V VGS=-V VGS=-.5V VGS=-3.5V VGS=-3.V VDS-Drain Source Voltage(V) Output Characteristics Drain-Source On Resistance 35 8 VDS=-5V ID=-8.5A 8 Ciss Qg-Gate Charge(nC) Gate Charge 7 Coss Crss VDS-Drain Source Voltage(V) Capacitance Gate Threshold Voltage Power Dissipation SMC93M Rev.A. 3

4 -ID (A) Normalized Transient Thermal Resistance Normalized On Resistance SMC93M TYPICAL CHARACTERISTICS VGS=-V VGS=-.5V RDS(ON) vs Junction Temperature TJ-Case Temperature( C) Drain Current vs TJ. us ms ms ms DC.. Duty= t Single Pulse.. Maximum Safe Operation Area VDS Voltage (V)..... Square Wave Pulse Duration(Sec) Thermal Transient Impedance t Duty Cycle, D=t/t -VGS Ton Toff V Qg VGS Td(on) Tr Td(off) Tf Qgs Qgd 9% % VDS Charge Gate Chrge Waveform Switching Time Waveform SMC93M Rev.A.

5 5.mm.75mm SMC93M SOP-8 PACKAGE DIMENSIONS.8mm.7mm Recommended Land Pattern Symbol Dimensions In Millimeters Dimensions In Inches Min. Max. Min. Max. A A A b c D E E e.7bsc..5bsc. L Ɵ 8 8 SMC93M Rev.A. 5