4MBI400VF-120R-50. IGBT Power Module (V series) 1200V/400A/IGBT, ±600V/450A/RB-IGBT, 4-in-1 package. IGBT Modules. (Unit : mm)

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1 4MBI4F12R5 IGBT Power Module ( series) 12/4A/IGBT, ±6/45A/RBIGBT, 4in1 package Features Higher efficiency Optimized Advanced Ttype circuit Low inductance module structure Applications Inverter for motor drive Uninterruptible powre supply Power conditioner Outline drawing (Unit : mm) Weight: 46g (typ.) Equivalent Circuit [Inverter] P [ACswitch] T1 G T3 G T3 E T3 T1 T1,T4 E M U RBIGBTs (Reverse Blocking T4 T2 T4 G T2 G T2 E N 1 214/6

2 T3, T4 T1, T2 4MBI4F12R5 Absolute Maximum Ratings (at Tc= 25 o C unless otherwise specified) Item Symbol Condition Maximum Rating Unit CollectorEmitter voltage CES 12 A GateEmitter voltage GES ±2 Collector current IGBT I C pulse Tc=8 o C I C Continuous Tc=8 o C 4 1ms 8 FWD I C 3 I C pulse 8 A Collector power dissipation P C 1 device 1835 W Junction temperature T j 15 Operating temperature T jop 125 o C CollectorEmitter voltage CES 125 A GateEmitter voltage GES ±2 Collector current I C Continuous Tc=8 o C 45 I C pulse 1ms Tc=8 o C 9 A Collector power dissipation P C 1 device 223 W Junction temperature T j 15 Operating temperature T jop 125 Case temperature T C 125 o C Storage temperature T stg 4 ~ +125 Isolation voltage between terminal and copper base (*1 iso AC : 1min. 25 AC Screw Mounting (*2) M5 or M6 3.5 torque Terminal (*3) M5 3.5 Nm (*1) All terminals should be connected together during the test. (*2) Recommendable alue : 3.6. Nm (M5 or M6) (*3) Recommendable alue : Nm (M6) 2 214/6

3 ACswitch Inverter 4MBI4F12R5 Electrical characteristics (at Tj= 25 C unless otherwise specified) Item Zero gate voltage Collector current GateEmitter leakage current GateEmitter threshold voltage CollectorEmitter saturation voltage Internal gate Input capacitance Turnon time Turnoff time Symbol I CES GE = CE = 12 I GES CE = GE = ±2 GE(th) CE = 2 I C = 4mA CE(sat) GE = 15 (chip) I C = 4A CE(sat) GE = 15 (terminal) I C = 4A R G(int) C ies t on t r t r(i) t off Thermal resistance characteristics t f Condition T j =25 C T j =125 C T j =25 C T j =125 C CE =1, GE =, f=1mhz Switching mode: A CC = I C = GE = R G = 4 4A ± /1Ω I F = 3A T j =25 C T j =125 C I F = 3A T j =25 C T j =125 C Characteristics min. typ. max Reverse recovery time t rr.1 F Forward on voltage (chip) 2.2 F (terminal) 2.4 Switching mode: B Reverse recovery time t rr CC = 4 I F = 4A.15 nsec GE = ±15 R G = +6/3Ω Zero gate voltage I GE = Collector current CES CE = 6 4. ma GateEmitter I CE = leakage current GES GE = ±2 8 na GateEmitter CE = 2 threshold voltage GE(th) I C = 4mA CE(sat) GE = 15 T j =25 C CollectorEmitter (chip) I C = 4A T j =125 C 2.6 saturation voltage CE(sat) GE = 15 T j =25 C (terminal) I C = 4A T j =125 C 2.8 Internal gate R G(int) 2.2 Ω Input capacitance C ies CE =1, GE =, f=1mhz 26. s t on Switching mode: B.35 Turnon time t r = CC 4.2 t r(i) I C = 4A.1 nsec Turnoff time t off GE = ±15 1. t f R G = +6./3Ω.1 CC = 4 I F = 4A.15 nsec Switching mode: A GE = ±15 R G = +8.2/1Ω PN 4 Internal inductance PM 33 nh MN Units ma na Ω s nsec Characteristics Item Symbol Condition min. typ. max. T1, T2 IGBT.68 Thermal resistance R (1device) th(jc) T1, T2 FWD.173 T3, T4 RBIGBT.56 Contact thermal T1, T2 with thermal.25 R resistance th(cf) T3, T4 compaound.13 (*1) This is the value which is defined mounting on the additional cooling fin with thermal compound. Units o C/W 3 214/6

4 ~ ~ ~ 4MBI4F12R5 Definitions of switching time 9% L GE trr CE I rr Ic cc 9% 9% RG GE CE A Ic 1% tr(i) 1% CE 1% tf Ic ton tr toff Definitions of switching mode P T1 cc T1 G T3 G T3 E T3 cc1 M cc T2 T4 T4 GT2 G T1,T4 E U T2 E N SW mode A B Load L T1 T2 T3 T4 MU SW OFF OFF ON MU OFF SW ON OFF PU OFF OFF SW ON UN OFF OFF ON SW SW: Connect to drive circuit and input gate signal ON: Bias voltage of gate +15 OFF: Reverse bias voltage of gate 15 cc=cc1/ /6

5 Capacitance: C ies, C oes, C res [nf] Collector Emitter voltage: CE [2/div] Gate Emitter voltage: GE [5/div] Collector Emitter voltage: CE [] 4MBI4F12R5 Collector current vs. CollectorEmitter voltage T j = 25 C / chip 6 GE = Collector current vs. CollectorEmitter voltage T j = 125 C / chip 6 5 GE = CollectorEmitter voltage: CE [] CollectorEmitter voltage: CE [] Collector current vs. CollectorEmitter voltage GE = 15 / chip 6 CollectorEmitter voltage vs. GateEmitter voltage Tj= 25 C / chip 8 5 Tj=25 o C Tj=125 o C Ic=6A Ic=3A CollectorEmitter voltage: CE [] Gate Emitter voltage: GE [] Capacitance vs. CollectorEmitter voltage (typ.) GE=, f= 1MHz, Tj= 25oC 1 8 Dynamic gate charge (typ.) cc=6, Ic=3A, Tj=25oC 2 Cies 6 GE CE 1 5 Cres 1 Coes CollectorEmitter voltage: CE [] Gate charge: Q g [nc] 214/6

6 Switching loss: E on, E off [mj/pulse ] Switching loss: E rr [mj/pulse ] Switching loss: E on, E off [mj/pulse ] Switching loss: E rr [mj/pulse ] Forward current : I F [A] 4MBI4F12R5 Forward current vs. forward on voltage (typ.) GE =±15, R G Recommended, T j =125 o C (T1, T2) chip T j = 125 C / chip T j =25 o C T j =125 o C RBSOA (Repetitive pulse) CollectorEmitter voltage: CE [] CollectorEmitter voltage: CE [] Switching loss vs. gate resistance (typ.) Switching loss vs. gate resistance (typ.) cc = 4, I C = 4A GE = ±15 cc = 4, I C = 4A GE = ± E rr (125 o C) 1 5 E off (125 o C) E on (125 o C) E on (25 o C) 4 2 E rr (25 o C) E off (25 o C) Gate resistance: R G [Ω] (T1, T2) Gate resistance: R G [Ω] (T1, T2) [SW mode: A] [ SW mode: A (T3,T4 RBIGBT recovery) ] Switching loss vs. Collector current (typ.) Switching loss vs. Collector current (typ.) cc = 4, GE = ±15, R G = +8.2/1Ω (T1, T2) cc = 4, GE = ±15, R G = +8.2/1Ω (T1, T2) 15 6 E rr (125 o C) 1 E on (125 o C) E on (25 o C) 4 E rr (25 o C) 5 E off (125 o C) 2 E off (25 o C) /6

7 Reverse recovery current : I rr [A] Reverse recovery time: t rr [nsec] Switching time: t on, t r, t off, t f [ nsec ] Switching time: ton, tr, toff, tf [nsec] 4MBI4F12R5 [SW mode: A] [SW mode: A] Switching time vs. Collector current (typ.) Switching time vs. Collector current (typ.) cc =4, I C =4A, R G =+8.2/1Ω, T j =125 o C (T1, T2) cc =4, I C =4A, GE =±15, T j =125 o C (T1, T2) 1 1 t on t on 1 t r 1 t off t r t off 1 t f 1 t f Gate resistance: R G [Ω] (T1, T2) [SW mode: A (T3, T4 RBIGBT recovery)] Reverse recovery characteristics (typ.) cc =4, GE =±15, R G =+8.2/1Ω, T j =125 o C (T1, T2) 1 t rr 1 I rr Forward current: I F [A] 7 214/6

8 Capacitance: C ies, C oes, C res [nf] Collector Emitter voltage: CE [2/div] Gate Emitter voltage: GE [5/div] Collector Emitter voltage: CE [] Switching time: t on, t r, t off, t f [ nsec ] Switching time: ton, tr, toff, tf [nsec] 4MBI4F12R5 [ACswitch (T3, T4)] Collector current vs. CollectorEmitter voltage (typ.) T j = 25 o C / chip 8 GE = [ACswitch (T3, T4)] Collector current vs. CollectorEmitter voltage (typ.) T j = 125 o C / chip 8 GE = CollectorEmitter voltage: CE [] CollectorEmitter voltage: CE [] [ACswitch (T3, T4)] Collector current vs. CollectorEmitter voltage (typ.) GE =15 / chip 8 [ACswitch (T3, T4)] ollectoremitter voltage vs. GateEmitter voltage (typ T j = 25 o C / chip T j =25 o C T j =125 o C I C =8A I C =4A CollectorEmitter voltage: CE [] Gate Emitter voltage: GE [] [ACswitch (T3, T4)] Capacitance vs. CollectorEmitter voltage (typ.) GE =, f = 1MHz, T j = 25 o C 1 4 cc [ACswitch (T3, T4)] Dynamic gate charge (typ.) = 4, I c = 4A, T j = 25 o C 2 1 C ies 2 CE GE 15 1 C oes 5 1 C res CollectorEmitter voltage: CE [] Gate charge: Q g [nc] 214/6

9 Switching time: t on, t r, t off, t f [nsec] Switching time: t on, t r, t off, t f [nsec] Switching loss: E on, E off [mj/pulse ] Switching loss: E rr [mj/pulse ] Switching loss: E on, E off [mj/pulse ] Switching loss: E rr [mj/pulse ] 4MBI4F12R5 16 [SW mode: B] [SW mode: B (T1,T2 FWD recovery)] Switching loss vs. gate resistance (typ.) Switching loss vs. gate resistance (typ.) cc =4, I C =4A, GE =±15, cc =4, I C =4A, GE =±15, 2 14 E on (125 o C) E on (25 o C) E off (125 o C) E off (25 o C) 15 1 E rr (125 o C) E rr (25 o C) Gate resistance: Rg [Ω] (T3, T4) Gate resistance: Rg [Ω] (T3, T4) [SW mode: B] [SW mode: B (T1,T2 FWD recovery)] Switching loss vs. Collector current (typ.) Switching loss vs. Collector current (typ.) cc = 4, GE =±15R G =+6./3Ω (T3, T4) cc = 4, GE =±15R G =+6./3Ω (T3, T4) 75 2 E off (125 o C) 15 E rr (125 o C) 5 E off (25 o C) 1 E rr (25 o C) 25 E on (125 o C) 5 E on (25 o C) [SW mode: B] [SW mode: B] Switching time vs. Collector current (typ.) Switching time vs. Collector current (typ.) cc =4, GE =±15, R G =+6./3Ω T j =125 o C (T3, T4) cc =4 I C =4A GE =±15 T j =125 o C 1 1 t off 1 t off 1 t on t on t r 1 t f 1 t r tf Gate resistance: Rg [Ω] 214/6

10 Thermal resistanse: Rth(jc) [ C/W] * IRP [A] Reverse recovery current: I rr [A] Reverse recovery time: t rr [nsec] 4MBI4F12R5 [SW mode: B (T1,T2 FWD recovery)] Reverse bias safe operating area (max.) Reverse recovery characteristics (typ.) GE =±15, R G Recommended, T j =125 o C (T3, T4) cc = 4, GE =±15R G =+6./3Ω (T3, T4) T3, T4 (Terminal) 1 1 I rr (125 o C) 8 1 t rr (125 o C) 6 4 RBSOA (Repetitive pulse) Forward current: I F [A] CollectorEmitter voltage: CE [] 1 Transient thermal resistance (max.) Reverse recovery withstand capability for FWD, RBIGBT T j = 125 o C 9 FWD IGBT RBIGBT 6 5 Pmax[T1,T2]=2kW Rth[ /W] T [sec] IGBT FWD RBIGBT Pulse width: P w [sec] 2 1 Pmax[T3,T4]=1kW RP [] 1 214/6

11 4MBI4F12R5 Warnings 1. This Catalog contains the product specifications, characteristics, data, materials, and structures as214/6/9 The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this Catalog, be sure to obtain the latest specifications. 2. All applications described in this Catalog exemplify the use of Fuji's products for your reference only. No right or license, either express or implied, under any patent, copyright, trade secret or other intellectual property right owned by Fuji Electric Co., Ltd. is (or shall be deemed) granted. Fuji Electric Co., Ltd. makes no representation or warranty, whether express or implied, relating to the infringement or alleged infringement of other's intellectual property rights which may arise from the use of the applications described herein. 3. Although Fuji Electric Co., Ltd. is enhancing product quality and reliability, a small percentage of semiconductor products may become faulty. When using Fuji Electric semiconductor products in your equipment, you are requested to take adequate safety measures to prevent the equipment from causing a physical injury, fire, or other problem if any of the products become faulty. It is recommended to make your design failsafe, flame retardant, and free of malfunction. 4. The products introduced in this Catalog are intended for use in the following electronic and electrical equipment which has normal reliability requirements. Computers OA equipment Communications equipment (terminal devices) Measurement equipment Machine tools Audiovisual equipment Electrical home appliances Personal equipment Industrial robots etc. 5. If you need to use a product in this Catalog for equipment requiring higher reliability than normal, such as for the equipment listed below, it is imperative to contact Fuji Electric Co., Ltd. to obtain prior approval. When using these products for such equipment, take adequate measures such as a backup system to prevent the equipment from malfunctioning even if a Fuji's product incorporated in the equipment becomes faulty. Transportation equipment (mounted on cars and ships) Trunk communications equipment Trafficsignal control equipment Gas leakage detectors with an autoshutoff feature Emergency equipment for responding to disasters and antiburglary devices Safety devices Medical equipment 6. Do not use products in this Catalog for the equipment requiring strict reliability such as the following and equivalents to strategic equipment (without limitation). Space equipment Aeronautic equipment Nuclear control equipment Submarine repeater equipment 7. Copyright c by Fuji Electric Co., Ltd. All rights reserved. No part of this Catalog may be reproduced in any form or by any means without the express permission of Fuji Electric Co., Ltd. 8. If you have any question about any portion in this Catalog, ask Fuji Electric Co., Ltd. or its sales agents before using the product. Neither Fuji Electric Co., Ltd. nor its agents shall be liable for any injury caused by any use of the products not in accordance with instructions set forth herein /6

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