GT50J325 GT50J325. High Power Switching Applications Fast Switching Applications. Maximum Ratings (Ta = 25 C) Thermal Characteristics

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1 GT5J25 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT5J25 High Power Switching Applications Fast Switching Applications Unit: mm The th generation Enhancement-mode Fast switching (FS): Operating frequency up to 5 khz (reference) High speed: tf =.5 µs (typ.) Low switching loss : Eon =. mj (typ.) : Eoff =. mj (typ.) Low saturation Voltage: VCE (sat) = 2. V (typ.) FRD included between emitter and collector Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Collector-emitter voltage V CES 6 V Gate-emitter voltage V GES ±2 V Collector current Emitter-collector forward current Collector power dissipation () DC I C 5 ms I CP DC I F 5 ms I FM P C 2 W Junction temperature T j 5 C Storage temperature range T stg 55 to 5 C A A JEDEC JEITA TOSHIBA Weight: 9.75 g 2-2F2C Thermal Characteristics Characteristics Symbol Max Unit Thermal resistance (IGBT) R th (j-c).52 C/W Thermal resistance (diode) R th (j-c) 2. C/W Equivalent Circuit Collector Gate Emitter 22--2

2 GT5J25 Electrical Characteristics (Ta = 25 C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current I GES V GE = ±2 V, V CE = ±5 na Collector cut-off current I CES V CE = 6 V, V GE =. ma Gate-emitter cut-off voltage V GE (OFF) I C = 5 ma, V CE = 5 V V Collector-emitter saturation voltage V CE (sat) I C = 5 A, V GE = 5 V V Input capacitance C ies V CE = V, V GE =, f = MHz 79 pf Turn-on delay time t d (on).9 Rise time t r.7 Turn-on time t on Inductive load Switching time.2 Turn-off delay time t d (off) V CC = V, I C = 5 A. Fall time t f V GG = +5 V, R G = Ω.5 Turn-off time t off (Note ). (Note 2) Turn-on switching loss E on. Switching loss Turn-off switching loss E off. Peak forward voltage V F I F = 5 A, V GE =.2 V Reverse recovery time t rr I F = 5 A, di/dt = A/µs 65 ns Note : Switching time measurement circuit and input/output waveforms µs mj V GE 9% % V GE R G I C L V CC I C 9% 9% V CE V CE % t d (off) % % t d (on) % t f t r t off t on Note 2: Switching loss measurement waveforms V GE 9% % I C V CE 5% E off E on

3 GT5J25 I C V CE 2 V CE V GE Tc = C VGE = 7 V 6 2 IC = A Collector-emitter voltage V CE (V) 2 V CE V GE 2 V CE V GE IC = A IC = A I C V GE V CE (sat) Tc VCE = 5 V 5 VGE = 5 V 6 2 Collector-emitter saturation voltage VCE (sat) (V) IC = A Case temperature Tc ( C) 22--2

4 GT5J25 Switching time ton, tr, td (on) (µs)... Switching time t on, t r, t d (on) R G VCC = V VGG = 5 V IC = 5 A (Note ) ton tr td (on) Switching time ton, tr, td (on) (µs)... td (on) Switching time t on, t r, t d (on) I C VCC = V VGG = 5 V RG = Ω (Note ) ton tr Gate resistance R G (Ω) Collector current I C (A) Switching time toff, tf, td (off) (µs)... Switching time t off, t f, t d (off) R G VCC = V VGG = 5 V IC = 5 A (Note ) toff td (off) tf Switching time toff, tf, td (off) (µs)... Switching time t off, t f, t d (off) I C VCC = V VGG = 5 V RG = Ω (Note ) td (off) tf toff Gate resistance R G (Ω) Collector current I C (A) Switching loss Eon, Eoff (mj). Switching loss E on, E off R G VCC = V VGG = 5 V IC = 5 A (Note 2) Eoff Eon Switching loss Eon, Eoff (mj) Switching loss E on, E off I C VCC = V VGG = 5 V RG = Ω (Note 2). Eoff Eon Gate resistance R G (Ω) Collector current I C (A) 22--2

5 GT5J25 Capacitance C (pf) C V CE Cies Coes Cres VGE = f = MHz RL = 6 Ω V CE, V GE Q G 2 VCE = V Gate-emitter voltage VGE (V) Collector-emitter voltage V CE (V) Gate charge Q G (nc) Forward current IF (A) 6 2 Common collector VGE = I F V F 25 Reverse recovery current Irr (A). Common collector di/dt = A/µs VGE = Irr trr t rr, I rr I F Reverse recovery time trr (ns) 2 5 Forward voltage V F (V). 2 5 Forward current I F (A) Safe operating area Reverse bias SOA IC max (pulse)* IC max (continuous) DC operation *: Single pulse Curves must be derated linearly with. increase in temperature. ms* ms* µs* 5 µs*.. Tj < = 25 C VGE = 5 V. RG = Ω Collector-emitter voltage V CE (V) Collector-emitter voltage V CE (V)

6 GT5J25 r th (t) t w Transient thermal resistance rth (t) ( C/W) 2 FRD IGBT Pulse width t w (s)

7 GT5J25 RESTRICTIONS ON PRODUCT USE TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the Handling Guide for Semiconductor Devices, or TOSHIBA Semiconductor Reliability Handbook etc.. The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ( Unintended Usage ). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer s own risk. The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. The information contained herein is subject to change without notice. 77EAA