IGBT MODULE (V series) 1200V / 100A / IGBT, RB-IGBT 4 in one package
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1 MBIVN--5 IGBT MODULE (V series) V / A / IGBT, RB-IGBT in one package Features Higher Efficiency Optimized A (T-type) -3 level circuit Low inductance module structure Featuring Reverse Blocking IGBT (RB-IGBT) Applications Inverter for Motor Drive Uninterruptible Power Supply Power conditioner Maximum Ratings and Characteristics Absolute Maximum Ratings (at Tc=5 C unless otherwise specified) Items Symbols Conditions Maximum ratings Units Collector-Emitter voltage VCES V Gate-Emitter voltage VGES ± V Collector current IGBT IC Continuous TC= C Icp ms TC= C FWD -IC -IC pulse ms A Collector power dissipation PC device 3 W Collector-Emitter voltage VCES V Repetitive peak reverse voltage VRRM V Gate-Emitter voltage VGES ± V Collector current IC Continuous TC= C Icp ms TC= C A Collector power dissipation PC device W Junction temperature Tj 5 Case temperature TC 5 C Storage temperature Tstg - ~ +5 between terminal and copper base (*) Isolation voltage between thermistor and others (*) Viso AC : min. 5 VAC Mounting (*3) - M5 3.5 N m Note *: All terminals should be connected together during the test. Note *: Two thermistor terminals should be connected together, other terminals should be connected together and shorted to base plate during the test. Note *3: Recommendable value : Nm (M5) T, T T3, T 795a DECEMBER
2 MBIVN--5 Electrical characteristics (at Tj= 5 C unless otherwise specified) Items Symbols Conditions T, T Characteristics min. typ. max. Zero gate voltage collector current ICES VGE = V, VCE = V - -. ma Gate-Emitter leakage current IGES VCE = V, VGE = ±V - - na Gate-Emitter threshold voltage VGE (th) VCE = V, IC = ma V VCE (sat) (chip) VGE = 5V IC = A Tj= 5 C Collector-Emitter saturation voltage Tj=5 C VCE (sat) VGE = 5V Tj= 5 C V (P-U, V, W / U, V, W-N terminal) IC = A Tj=5 C Internal gate resistance Rg(int) Ω Input capacitance Cies VCE = V, VGE =V, f = MHz nf ton -.. SW mode : A Turn-on time tr VCC = 3V -.. tr (i) IC = A µs Turn-off time toff VGE = ±5V -.. RG =.Ω tf -..3 Forward on voltage Tj= 5 C VF (chip) IF = A Tj=5 C VF Tj= 5 C (P-U, V, W / U, V, W-N IF = A terminal) Tj=5 C V Reverse recovery time trr SW mode : A VCC = V IF = A VGE = ±5V RG =.Ω SW mode : B VCC = 3V VGE = ±5V IF = A RG = 3.3Ω (T3,T) Units µs T3, T Zero gate voltage collector current ICES VGE = V, VCE = V - -. ma Gate-Emitter leakage current IGES VCE = V, VGE = ±V - - na Gate-Emitter threshold voltage VGE (th) VCE = V, IC = ma V VCE (sat) VGE = 5V Tj= 5 C -.5. Collector-Emitter saturation voltage (chip) IC = A Tj=5 C -. - VCE (sat) VGE = 5V Tj= 5 C V (M-U, V, W terminal) IC = A Tj=5 C Internal gate resistance Rg(int) Ω Input capacitance Cies VCE = V, VGE = V, f = MHz nf ton -.. SW mode : B Turn-on time tr VCC = 3V -.. tr (i) IC = A -. - µs Turn-off time toff VGE = ±5V -.. RG = 3.3Ω tf Reverse recovery time trr SW mode : A VCC = 3V VGE = ±5V IC = A RG =.Ω (T,T) µs Thermistor T= 5 C Resistance R Ω T= C B value B T= 5/5 C K Thermal resistance characteristics Items Symbols Conditions Characteristics min. typ. max. Units T, T IGBT Thermal resistance (device) Contact thermal resistance (device) (*) Rth(j-c) Rth(c-f) T, T FWD - -. T3, T RB-IGBT C/W T, T T3, T with Thermal Compound Note *: This is the value which is defined mounting on the additional cooling fin with thermal compound (thermal conductivity = W/m k).
3 MBIVN--5 Definitions of switching time ~ 9% V V L VGE tr r Vcc VCE 9% I r r ~ Ic 9% RG VGE VCE V A Ic % tr ( i ) % ~ VCE tf % Ic tr to n to f f Definitions of switching mode P Vcc T G T3 G T3 E T3 T T,T E Vcc M U,V,W N Vcc T T T G T G T E State of switching device SW: Connect to drive circuit and input gate signal. ON: Bias voltate of gate +5V. OFF: Reverse bias voltage of gate -5V. Vcc=Vcc/ 3
4 MBIVN--5 Characteristics (Representative) Tj= 5ºC / chip VGE=V 5V V Tj= 5ºC / chip VGE=V 5V V 5 5 V 5 5 V V V Collector-Emitter voltage: VCE[V] Collector-Emitter voltage: VCE[V] VGE=5V / chip Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) Tj= 5ºC / chip 5 5 Tj=5 C Tj=5 C Collector - Emitter voltage: VCE [V] Ic=A Ic=A Ic=5A Collector-Emitter voltage: VCE[V] Gate - Emitter voltage: VGE [V] Capacitance vs. Collector-Emitter voltage (typ.) VGE=V, f= MHz, Tj= 5ºC Dynamic gate charge (typ.) Vcc=V, Ic=A, Tj=5ºC. Capacitance: Cies, Coes, Cres [nf]... Cies Cres Coes 3 Collector - Emitter voltage: VCE [V] Gate-Emitter voltage: VGE [V] VCE VGE Gate charge: Qg [uc] Collector-Emitter voltage: VCE [V]
5 MBIVN--5 Switching loss : Eon, Eoff, Err [mj/pulse ] Switching loss : Eon, Eoff, Err [mj/pulse ] 5 3 [ SW mode A ] Switching loss vs. Collector current (typ.) Vcc=3V VGE=±5V Rg=.Ω Eoff(5 C) Eon(5 C) Eoff(5 C) Eon(5 C) Err(5 C) Err(5 C) [ SW mode A ] Switching loss vs. Gate resistanse (typ.) Vcc=3V Ic=A VGE=±5V Tj=5 Eoff(5 C) Eon(5 C) Eoff(5 C) Eon(5 C) Err(5 C) Err(5 C) Switching time : ton, tr, toff, tf [ nsec ] Switching time : ton, tr, toff, tf [ nsec ] [ SW mode A ] Switching time vs. Collector current (typ.) Vcc=3V VGE=±5V Rg=.Ω 3 ton(5 C) ton(5 C) toff(5 C) toff(5 C) tr(5 C) tr(5 C) tf(5 C) tf(5 C) [ SW mode A ] Switching time vs. Gate resistanse (typ.) Vcc=3V Ic=A VGE=±5V Gate Resistance: Rg [ Ω ] Gate Resistance: Rg [ Ω ] toff(5 C) ton(5 C) toff(5 C) ton(5 C) tr(5 C) tr(5 C) tf(5 C) tf(5 C) [ SW mode A ] Switching time vs. Collector current (typ.) Vcc=3V VGE=±5V Rg=.Ω 3 Reverse bias safe operating area (max.) VGE=5V,-VGE 5V, Rg.Ω,Tj = 5 Reverse recovery current : Irr [ A ] Reverse recovery time : trr [ nsec ] trr(5 C) trr(5 C) Irr(5 Irr(5 C) C) RBSOA (Repetitive pulse) 5 Collector-Emitter voltage : VCE [V] (Main terminals)
6 MBIVN--5 [ T3, T (RB-IGBT)] Tj= 5ºC / chip [ T3, T (RB-IGBT)] Tj= 5ºC / chip VGE=V 5V VGE=V 5V V 5 5 V V V 5 5 V V Collector-Emitter voltage: V CE [V] Collector-Emitter voltage: V CE [V] [ T3, T (RB-IGBT)] VGE=5V / chip [ T3, T (RB-IGBT)] Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) Tj= 5ºC / chip 5 5 Tj=5 C Tj=5 C Collector - Emitter voltage: VCE [V] Ic=A Ic=A Ic=5A Collector-Emitter voltage: VCE[V] Gate - Emitter voltage: VGE [V] [ T3, T (RB-IGBT)] Capacitance vs. Collector-Emitter voltage (typ.) VGE=V, f= MHz, Tj= 5ºC [ T3, T (RB-IGBT)] Dynamic gate charge (typ.) Vcc=3V, Ic=A, Tj=5ºC Capacitance: Cies, Coes, Cres [nf]. Cres Cies Coes Gate-Emitter voltage: VGE [V] VCE VGE Collector-Emitter voltage: VCE [V] Collector - Emitter voltage: VCE [V] Gate charge: Qg [uc]
7 MBIVN--5 Switching loss : Eon, Eoff, Err [mj/pulse ] [ SW mode B ] Switching loss vs. Collector current (typ.) Vcc=3V,VGE=±5V,Rg=3.3Ω Eoff(5 C) Eoff(5 C) Eon(5 C) Eon(5 C) Err(5 C) Err(5 C) 3 Switching time : ton, tr, toff, tf [ nsec ] [ SW mode B ] Switching time vs. Collector current (typ.) Vcc=3V,VGE=±5V,Rg=3.3Ω ton(5 C) ton(5 C) toff(5 C) toff(5 C) tr(5 C) tr(5 C) tf(5 C) tf(5 C) 3 Switching loss : Eon, Eoff, Err [mj/pulse ] [ SW mode B ] Switching loss vs. Gate resistanse (typ.) Vcc=3V,Ic=A,VGE=±5V Eon(5 C) Eon(5 C) Eoff(5 C) Eoff(5 C) Err(5 C) Err(5 C) Switching time : ton, tr, toff, tf [ nsec ] [ SW mode B ] Switching time vs. Gate resistanse (typ.) Vcc=V,Ic=A,VGE=±5V ton(5 C) ton(5 C) toff(5 C) toff(5 C) tr(5 C) tr(5 C) tf(5 C) tf(5 C) Gate Resistance: Rg [Ω] Gate Resistance: Rg [Ω] [ SW mode B ] Switching time vs. Collector current (typ.) Vcc=V,VGE=±5V,Rg=3.3Ω [ T3, T ] Reverse bias safe operating area (max.) VGE=5V,-VGE 5V, Rg 3.3Ω,Tj = 5ºC 3 Reverse recovery current : Irr [ A ] Reverse recovery time : trr [ nsec ] Irr(5 C) Irr(5 C) trr(5 C) trr(5 C) RBSOA (Repetitive pulse) 7 Collector-Emitter voltage : VCE [V] (Main terminals)
8 MBIVN--5 Forward current vs. forward on voltage (typ.) chip Transient thermal resistance (max.) Forward current : IF [A] 5 5 Tj=5 C Tj=5 C 3 Forward on voltage : V F [V] Thermal resistanse : Rth(j-c) [ C/W ].. Zth = n n= n 3 τ n IGBT r n FWD RB-IGBT Pulse width : Pw [sec] e FWD RB-IGBT IGBT t τ n [ Thermistor ] Temperature characteristic (typ.) Reverse recovery withstand capability for FWD Tj=5 o C 3 Resistance : R [kω] IRP [A] Temperature [ C ] VRP [V]
9 MBIVN--5 Outline Drawings, mm Equivalent Circuit Schematic Weight: 3g (typ.) : RB-IGBT (Reverse Bolcking IGBT) 9
10 MBIVN--5 WARNING. This Catalog contains the product specifications, characteristics, data, materials, and structures as of June 5. The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this Catalog, be sur to obtain the latest specifications.. All applications described in this Catalog exemplify the use of Fuji's products for your reference only. No right or license, either express or implied, under any patent, copyright, trade secret or other intellectual property right owned by Fuji Electric Co., Ltd. is (or shall be deemed) granted. Fuji Electric Co., Ltd. makes no representation or warranty, whether express or implied, relating to the infringement or alleged infringement of other's intellectual property rights which may arise from the use of the applications described herein. 3. Although Fuji Electric Co., Ltd. is enhancing product quality and reliability, a small percentage of semiconductor products may become faulty. When using Fuji Electric semiconductor products in your equipment, you are requested to take adequate safety measures to prevent the equipment from causing a physical injury, fire, or other problem if any of the products become faulty. It is recommended to make your design failsafe, flame retardant, and free of malfunction.. The products introduced in this Catalog are intended for use in the following electronic and electrical equipment which has normal reliability requirements. Computers OA equipment Communications equipment (terminal devices) Measurement equipment Machine tools Audiovisual equipment Electrical home appliances Personal equipment Industrial robots etc. 5. If you need to use a product in this Catalog for equipment requiring higher reliability than normal, such as for the equipment listed below, it is imperative to contact Fuji Electric Co., Ltd. to obtain prior approval. When using these products for such equipment, take adequate measures such as a backup system to prevent the equipment from malfunctioning even if a Fuji's product incorporated in the equipment becomes faulty. Transportation equipment (mounted on cars and ships) Trunk communications equipment Traffic-signal control equipment Gas leakage detectors with an auto-shut-off feature Emergency equipment for responding to disasters and anti-burglary devices Safety devices Medical equipment. Do not use products in this Catalog for the equipment requiring strict reliability such as the following and equivalents to strategic equipment (without limitation). Space equipment Aeronautic equipment Nuclear control equipment Submarine repeater equipment 7. Copyright 99-5 by Fuji Electric Co., Ltd. All rights reserved. No part of this Catalog may be reproduced in any form or by any means without the express permission of Fuji Electric Co., Ltd.. If you have any question about any portion in this Catalog, ask Fuji Electric Co., Ltd. or its sales agents before using the product. Neither Fuji Electric Co., Ltd. nor its agents shall be liable for any injury caused by any use of the products not in accordance with instructions set forth herein.
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