Item Symbol Condition Rating Unit Collector-Emitter voltage Gate-Emitter voltage. A Collector current. Tc=80 C IC. Tc=80 C.
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- Magnus McKenzie
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1 7MBRU12 IGBT Modules IGBT MODULE (U series) 12 / / PIM Features Low CE(sat) Compact Package P.C. Board Mount Module Converter Diode Bridge Dynamic Brake Circuit pplications Inverter for Motoe Drive C and DC Servo Drive mplifier Uninterruptible Power Supply Maximum ratings and characteristics bsolute maximum ratings (Tc= C unless otherwise specified) Item Symbol Condition Rating Unit CollectorEmitter voltage GateEmitter voltage CES GES 12 ±2 IC Continuous Tc= C Collector current Tc=8 C 15 ICP 1ms Tc= C Tc=8 C 5 3 IC IC pulse 1ms 5 Collector power disspation CollectorEmitter voltage GateEmitter voltage Collector current PC CES GES IC 1 device Continuous Tc= C Tc=8 C ±2 15 W ICP 1ms Tc= C Tc=8 C 5 3 Collector power disspation Repetitive peak reverse voltage Repetitive peak reverse voltage PC RRM RRM 1 device W verage output current Surge current (NonRepetitive) IO IFSM 5Hz/6Hz sine wave Tj=15 C, 1ms 26 I 2 t (NonRepetitive) I 2 t half sine wave s Operating junction temperature Storage temperature Isolation between terminal and copper base *2 Tj Tstg iso C : 1 minute to +1 C C C voltage between thermistor and others *3 C Mounting screw torque 3.5 *1 N m *1 Recommendable value : 2.5 to 3.5 N m (M5) *2 ll terminals should be connected together when isolation test will be done. *3 Two thermistor terminals should be connected together, each other terminals should be connected together and shorted to base plate when isolation test will be done. Converter Brake Inverter
2 7MBRU12 Elecical characteristics (Tj= C unless otherwise specified) Item Symbol Condition Characteristics Unit Thermistor Converter Brake Inverter Min. Typ. Max. Zero gate voltage collector current ICES CE=12, GE= 1. m GateEmitter leakage current IGES CE=, GE=±2 2 n GateEmitter threshold voltage GE(th) CE=2, IC=m CollectorEmitter saturation voltage CE(sat) GE=15 Tj= C (terminal) Ic= Tj=1 C 2.75 CE(sat) Tj= C (chip) Tj=1 C 2.55 Input capacitance Cies GE=, CE=1, f=1mhz 2 nf Turnon time CC= µs IC=.28.6 (i) GE=±15.3 Turnoff time RG= 68 Ω Forward on voltage F GE= Tj= C (terminal) IF= Tj=1 C 2.55 F Tj= C (chip) Tj=1 C 2.35 Reverse recovery time r IF=.35 µs Zero gate voltage collector current ICES CE=12, GE= 1. m GateEmitter leakage current IGES CE=, GE=±2 2 n CollectorEmitter saturation voltage CE(sat) IC= Tj= C (terminal) GE=15 Tj=1 C 2.75 CE(sat) Tj= C (chip) Tj=1 C 2.55 Turnon time CC= µs IC=.28.6 Turnoff time GE=± RG= 68 Ω.7.3 Reverse current IRRM R=12 1. m Forward on voltage FM IF= terminal GE= chip 1.1 Reverse current Resistance B value IRRM R B R=16 T= C T=1 C T=/5 C m Ω K Thermal resistance Characteristics Item Symbol Condition Characteristics Unit Min. Typ. Max. Inverter IGBT 1.7 Thermal resistance ( 1 device ) Rth(jc) Inverter FWD 1.58 Brake IGBT 1.7 C/W Converter Diode.9 Contact thermal resistance * Rth(cf) With thermal compound.5 * This is the value which is defined mounting on the additional cooling fin with thermal compound Equivalent Circuit Schematic [Converter] 21(P) 22(P1) [Brake] [Inverter] [Thermistor] 8 9 2(Gu) 18(Gv) 16(Gw) 1(R) 2(S) 3(T) 19(Eu) 17(Ev) 15(Ew) 7(B) 4(U) 5() 6(W) 14(Gb) 13(Gx) 12(Gy) 11(Gz) 1(En) 23(N) 24(N1)
3 7MBRU12 Characteristics (Representative) Collector current vs. CollectorEmitter voltage (typ.) Collector current vs. CollectorEmitter voltage (typ.) Tj= C / chip Tj= 1 C / chip GE= GE= Collector current vs. CollectorEmitter voltage (typ.) CollectorEmitter voltage vs. GateEmitter voltage (typ.) GE=15 / chip Tj= C / chip Tj= C Tj=1 C Collector Emitter voltage : CE [ ] Ic=3 Ic=15 Ic= Gate Emitter voltage : GE [ ] Capacitance vs. CollectorEmitter voltage (typ.) Dynamic Gate charge (typ.) GE=, f= 1MHz, Tj= C cc=6, Ic=, Tj= C 1. Capacitance : Cies, Coes, Cres [ nf ] 1..1 Cies Coes Cres CollectorEmitter voltage : CE [ 2/div ] Gate Emitter voltage : GE [ 5/div ] GE CE Gate charge : Qg [ nc ]
4 7MBRU12 Switching time vs. Collector current (typ.) Switching time vs. Collector current (typ.) cc=6, GE=±15, Rg=68Ω, Tj= C cc=6, GE=±15, Rg=68Ω, Tj=1 C 1 1 Switching time :,,, [ nsec ] 1 1 Switching time :,,, [ nsec ] Collector current : Ic [ ] Collector current : Ic [ ] Switching time vs. Gate resistance (typ.) Switching loss vs. Collector current (typ.) cc=6, Ic=, GE=±15, Tj= C cc=6, GE=±15, Rg=68Ω 1 8. Switching time :,,, [ nsec ] 1 1 Switching loss : Eon, Eoff, Err [ mj/pulse ] Eon(1 C) Eon( C) Eoff(1 C) Eoff( C) Err(1 C) Err( C) Gate resistance : Rg [ Ω ] Collector current : Ic [ ] Switching loss vs. Gate resistance (typ.) Reverse bias safe operating area (max.) cc=6, Ic=, GE=±15, Tj= 1 C +GE=15,GE <= 15, RG >= 68Ω,Tj <= 1 C Switching loss : Eon, Eoff, Err [ mj/pulse ] 1 5 Eon Eoff Err Collector current : Ic [ ] Gate resistance : Rg [ Ω ] Collector Emitter voltage : CE [ ]
5 7MBRU12 Forward current vs. Forward on voltage (typ.) Reverse recovery characteristics (typ.) chip cc=6, GE=±15, Rg=68Ω 4 1 Forward current : IF [ ] Tj=1 C Tj= C Reverse recovery current : Irr [ ] Reverse recovery time : r [ nsec ] 1 r (1 C) r ( C) Irr (1 C) Irr ( C) Forward on voltage : F [ ] Forward current : IF [ ] [ Converter ] Forward current vs. Forward on voltage (typ.) chip 6 Forward current : IF [ ] Tj= C Tj=1 C Forward on voltage : FM [ ] Transient thermal resistance (max.) [ Thermistor ] Temperature characteristic (typ.) 1. 1 Thermal resistanse : Rth(jc) [ C/W ] 1..1 FWD[Inverter] IGBT[Inverter, Brake] Conv. Diode Resistance : R [ kω ] Pulse width : Pw [ sec ] Temperature [ C ]
6 7MBRU12 [ Brake ] [ Brake ] Collector current vs. CollectorEmitter voltage (typ.) Collector current vs. CollectorEmitter voltage (typ.) Tj= C / chip Tj= 1 C / chip GE= GE= [ Brake ] [ Brake ] Collector current vs. CollectorEmitter voltage (typ.) CollectorEmitter voltage vs. GateEmitter voltage (typ.) GE=15 / chip Tj= C / chip Tj= C Tj=1 C Collector Emitter voltage : CE [ ] Ic=3 Ic=15 Ic= Gate Emitter voltage : GE [ ] [ Brake ] [ Brake ] Capacitance vs. CollectorEmitter voltage (typ.) Dynamic Gate charge (typ.) GE=, f= 1MHz, Tj= C cc=6, Ic=, Tj= C 1. Capacitance : Cies, Coes, Cres [ nf ] 1..1 Cies Coes Cres CollectorEmitter voltage : CE [ 2/div ] Gate Emitter voltage : GE [ 5/div ] GE CE Gate charge : Qg [ nc ]
7 7MBRU12 Outline Drawings, mm
Item Symbol Condition Rating Unit Collector-Emitter voltage Gate-Emitter voltage. A Collector current. Tc=80 C 35. 1ms IC -IC pulse.
7MBR5U12 IGBT Modules IGBT MODULE (U series) 12 / 5 / PIM Features Low CE(sat) Compact Package P.C. Board Mount Module Converter Diode Bridge Dynamic Brake Circuit pplications Inverter for Motoe Drive
Item Symbol Condition Rating Unit Collector-Emitter voltage Gate-Emitter voltage. A Collector current A. Continuous Tc=25 C 35. Tc=75 C 30.
7MBRS14 IGBT Modules IGBT MODULE (S series) 14 / / PIM Features Low CE(sat) Compact Package P.C. Board Mount Module Converter Diode Bridge Dynamic Brake Circuit pplications Inverter for Motoe Drive C and
Item Symbol Condition Rating Unit Collector-Emitter voltage Gate-Emitter voltage. A Collector current A. Continuous Tc=25 C 35. Tc=80 C 30.
7MBR2S12 IGBT Modules IGBT MODULE (S series) 12 / 2 / PIM Features Low CE(sat) Compact package P.C. board mount Converter diode bridge, Dynamic brake circuit pplications Inverter for motor drive C and
Item Symbol Condition Rat ing Unit Collector-Emitter voltage Gate-Emitter voltage. Continuous. A Collector current
7MBR3S6 IGBT Modules IGBT MODULE (S series) 6 / 3 / PIM Features Low CE(sat) Compact package P.C. board mount Converter diode bridge, Dynamic brake circuit pplications Inverter for motor drive C and DC
Item Symbol Condition Rat ing Unit Collector-Emitter voltage Gate-Emitter voltage. Continuous Tc=25 C 75. A Collector current.
7MBR5SB12 IGBT Modules IGBT MODULE (S series) 12 / 5 / PIM Features Low CE(sat) Compact package P.C. board mount Converter diode bridge, Dynamic brake circuit pplications Inverter for motor drive C and
Item Symbol Condition Rating Unit Collector-Emitter voltage Gate-Emitter voltage. 1ms. 1 device. Continuous 1ms. 1 device
7MBR3SC6 IGBT Modules PIM/Built-in converter with thyristor and brake (S series) 6 / 3 / PIM Features Low CE(sat) Compact Package P.C. Board Mount Module Converter Diode Bridge Dynamic Brake Circuit pplications
Item Symbol Condition Rat ing Unit Collector-Emitter voltage Gate-Emitter voltage. Continuous. A Collector current
7MBRS6 IGBT Modules IGBT MODULE (S series) 6 / / PIM Features Low CE(sat) Compact package P.C. board mount Converter diode bridge, Dynamic brake circuit pplications Inverter for motor drive C and DC servo
Item Symbol Condition Rating Unit Collector-Emitter voltage Gate-Emitter voltage. Not recommend for new design. Continuous Tc=25 C
7MBRSC IGBT Modules PIM/Built-in converter with thyristor and brake (S series) / / PIM Features Low CE(sat) Compact Package P.C. Board Mount Module Converter Diode Bridge Dynamic Brake Circuit pplications
Icp 1ms TC=80 C 200 -IC 100. IC Continuous TC=80 C 50 ICP 1ms TC=80 C 100. Inverter, Brake 175 Converter 150 Operating junciton temperature
7MBR1VB65 IGBT MODULE (V series) 6V / 1A / PIM Features Low VCE(sat) Compact Package P.C.Board Mount Module Converter Diode Bridge Dynamic Brake Circuit RoHS compliant product Applications Inverter for
Icp 1ms TC=80 C 50 -IC 25. IC Continuous TC=80 C 25 ICP 1ms TC=80 C 50. Inverter, Brake 175 Converter 150 Operating junciton temperature
7MBR5VA5 IGBT MODULE (V series) V / 5A / PIM Features Low VCE(sat) Compact Package P.C.Board Mount Module Converter Diode Bridge Dynamic Brake Circuit RoHS compliant product Applications Inverter for Motor
Icp 1ms TC=80 C 100 -IC 50. IC Continuous TC=80 C 35 ICP 1ms TC=80 C 70. Inverter, Brake 175 Converter 150 Operating junciton temperature
7MBR5VB1 IGBT MODULE (V series) 12V / 5A / PIM Features Low VCE(sat) Compact Package P.C.Board Mount Module Converter Diode Bridge Dynamic Brake Circuit RoHS compliant product Applications Inverter for
Collector-Emitter voltage VCES 600 V Gate-Emitter voltage VGES ±20 V Ic Continuous Tc=80 C 100
7MBRVP65 IGBT MODULE (V series) 6V / A / PIM Features Low VCE(sat) Compact Package P.C.Board Mount Module Converter Diode Bridge Dynamic Brake Circuit RoHS compliant product Applications Inverter for Motor
Ic Continuous Tc=80 C 35 Icp 1ms Tc=80 C 70 -Ic 35 -Ic pulse 1ms 70 Collector power dissipation Pc 1 device 210 W
7MBR35VP15 IGBT MODULE (V series) 1V / 5A / PIM Features Low VCE(sat) Compact Package P.C.Board Mount Module Converter Diode Bridge Dynamic Brake Circuit RoHS compliant product Applications Inverter for
Collector-Emitter voltage VCES 1200 V Gate-Emitter voltage VGES ±20 V Ic Continuous Tc=100 C 50
IGBT MODULE (V series) 12V / A / PIM Features Low VCE(sat) Compact Package P.C.Board Mount Module Converter Diode Bridge Dynamic Brake Circuit RoHS compliant product Applications Inverter for Motor Drive
Icp 1ms TC=80 C 70 -Ic 35. IC Continuous TC=80 C 35 ICP 1ms TC=80 C 70
7MBR35VKB125 IGBT MODULE (V series) 12V / 35A / PIM Features Low VCE(sat) Compact Package P.C.Board Mount Module Converter Diode Bridge Dynamic Brake Circuit RoHS compliant product Applications Inverter
Icp 1ms TC=80 C 20 -Ic 10. IC Continuous TC=80 C 10 ICP 1ms TC=80 C 20
7MBRVKC IGBT MODULE (V series) V / A / PIM Features Low VCE(sat) Compact Package P.C.Board Mount Module Converter Diode Bridge Dynamic Brake Circuit RoHS compliant product Applications Inverter for Motor
Icp 1ms TC=80 C 60 -Ic 30. IC Continuous TC=80 C 30 ICP 1ms TC=80 C 60. Inverter, Brake 175 Converter 150 Operating junciton temperature
7MBR3VKA65 IGBT MODULE (V series) 6V / 3A / PIM Features Low VCE(sat) Compact Package P.C.Board Mount Module Converter Diode Bridge Dynamic Brake Circuit RoHS compliant product Applications Inverter for
Icp 1ms TC=80 C 70 -Ic 35. IC Continuous TC=80 C 35 ICP 1ms TC=80 C 70
IGBT MODULE (V series) V / 35A / PIM Features Low VCE(sat) Compact Package P.C.Board Mount Module Converter Diode Bridge Dynamic Brake Circuit RoHS compliant product Applications Inverter for Motor Drive
Viso AC : 1min VAC
MBIVA5 IGBT MODULE (V series) V / A / in one package Features Compact Package P.C.Board Mount Low VCE (sat) Applications Inverter for Motor Drive AC and DC Servo Drive Amplifier Uninterruptible Power Supply
Rating 600 ± to to Unit V V A A A W W C C N m. Symbol Characteristics Conditions Unit Min. Typ. Max.
600 / 50 Molded Package Features Small molded package Low power loss Soft switching with low switching surge and noise High reliability, high ruggedness (RBSO, SCSO etc.) Comprehensive line-up pplications
Collector-Emitter voltage VCES 1200 V Gate-Emitter voltage VGES ±20 V Ic Continuous Tc=80 C 450
IGBT MODULE (V series) V / 45A / 6 in one package Features Compact Package P.C.Board Mount Low VCE (sat) Applications Inverter for Motor Drive AC and DC Servo Drive Amplifier Uninterruptible Power Supply
Collector-Emitter voltage VCES 1200 V Gate-Emitter voltage VGES ±20 V Ic Continuous Tc=100 C 100
6MBIVB125 IGBT MODULE (V series) 12V / A / 6 in one package Features Compact Package P.C.Board Mount Low VCE (sat) Applications Inverter for Motor Drive AC and DC Servo Drive Amplifier Uninterruptible
Continuous. Ic pulse 1ms 900. C Case temperature TC 125 Storage temperature Tstg -40 to N m Terminals (*4) - 4.5
6MBI45V25 IGBT MODULE (V series) 2V / 45A / 6 in one package Features Compact Package P.C.Board Mount Low VCE (sat) RoHS Compliant product Applications Inverter for Motor Drive AC and DC Servo Drive Amplifier
CM200DY-24A. APPLICATION AC drive inverters & Servo controls, etc CM200DY-24A. IC...200A VCES V Insulated Type 2-elements in a pack
CMDY-A CMDY-A IC...A CES... Insulated Type -elements in a pack APPLICATION AC drive inverters & Servo controls, etc OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 9 8 CE E C E G GE 8 () -φ6. MOUNTING
IGBT MODULE (V series) 1200V / 100A / IGBT, RB-IGBT 4 in one package
MBIVN--5 IGBT MODULE (V series) V / A / IGBT, RB-IGBT in one package Features Higher Efficiency Optimized A (T-type) -3 level circuit Low inductance module structure Featuring Reverse Blocking IGBT (RB-IGBT)
Tc=25 C 1800 Tc=100 C 1400 Collector current
2MBI14VXB-17E-5 IGBT MODULE (V series) 17V / 14A / 2 in one package Inverter Inverter Thermistor 1 Features High speed switching Voltage drive Low Inductance module structure Applications Inverter for
Tc=25 C 1800 Tc=100 C 1400 Collector current
2MBI4VXB-2P-5 IGBT MODULE (V series) 2V / 4A / 2 in one package Inverter Inverter Thermistor Features High speed switching Voltage drive Low Inductance module structure Applications Inverter for Motor
Items Symbols Conditions Maximum ratings Units Collector-Emitter voltage VCES 1200 V Gate-Emitter voltage VGES ±20 V. Continuous
1MBI2U4H-12L-5 IGBT MODULE (U series) 12V / 2A / 1 in one package Features High speed switching Voltage drive Low Inductance module structure Applications Inverter DB for Motor Drive AC and DC Servo Drive
4MBI400VF-120R-50. IGBT Power Module (V series) 1200V/400A/IGBT, ±600V/450A/RB-IGBT, 4-in-1 package. IGBT Modules. (Unit : mm)
4MBI4F12R5 IGBT Power Module ( series) 12/4A/IGBT, ±6/45A/RBIGBT, 4in1 package Features Higher efficiency Optimized Advanced Ttype circuit Low inductance module structure Applications Inverter for motor
IGBT MODULE (V series) 1200V / 300A / IGBT, 600V/300A/RB-IGBT, 4 in one package
MBI3VG-R-5 IGBT MODULE (V series) V / 3A / IGBT, V/3A/RB-IGBT, in one package Features Higher Efficiency Optimized A (T-type) -3 level circuit Low inductance module sucture Featuring Reverse Blocking IGBT
C Storage temperature Tstg -40 ~ 125 Isolation voltage between terminal and copper base (*1) Viso AC : 1min VAC Screw torque
2MBI75VA-12-5 IGBT MODULE (V series) 12V / 75A / 2 in one package Features High speed switching Voltage drive Low Inductance module structure Applications Inverter for Motor Drive AC and DC Servo Drive
C Storage temperature Tstg -40 ~ +125 Isolation voltage between terminal and copper base (*1) Viso AC : 1min VAC Screw torque
2MBI6VD-6-5 IGBT MODULE (V series) 6V / 6A / 2 in one package Inverter Inverter Features High speed switching Voltage drive Low Inductance module structure Applications Inverter for Motor Drive AC and
Tc=100 C 300 Tc=25 C 360 Collector current
2MBI3VH-12-5 IGBT MODULE (V series) 12V / 3A / 2 in one package Inverter Inverter Features High speed switching Voltage drive Low Inductance module structure Applications Inverter for Motor Drive AC and
CP15TD1-24A. DIP-CIB 3Ø Converter + 3Ø Inverter + Brake 15 Amperes/1200 Volts
Outline Drawing and Circuit Diagram Dimensions Inches Millimeters A 2.68±.1 68.±.3 B 1.73±.2 44.±.5 C.58±.4 14.7±.1 D 3.1±.2 79.±.5 E 2.83 72. F.16±.1 4.±.3 G 2.83±.1 72.±.3 H.7 2. J.2±.8 5.±.2 K.87 22.
Chapter 2. Technical Terms and Characteristics
Chapter 2 Technical Terms and Characteristics CONTENTS Page 1 IGBT terms 2-2 2 IGBT characteristics 2-5 This section explains relevant technical terms and characteristics of IGBT modules. 2-1 1 IGBT terms
IGBT MODULE (V series) 1200V / 75A / IGBT, RB-IGBT 12 in one package
MBIVN-- IGBT MODULE (V series) V / A / IGBT, RB-IGBT in one package Features Higher Efficiency Optimized A (T-type) -3 level circuit Low inductance module structure Featuring Reverse Blocking IGBT (RB-IGBT)
4MBI450VB-120R1-50. IGBT Power Module (V series) 1200V/450A/IGBT, ±900V/450A/RB-IGBT, 4-in-1 package. IGBT Modules. [Thermistor] [Inverter] 15
![4MBI450VB-120R1-50. IGBT Power Module (V series) 1200V/450A/IGBT, ±900V/450A/RB-IGBT, 4-in-1 package. IGBT Modules. [Thermistor] [Inverter] 15](/thumbs/95/123010548.jpg "4MBI450VB-120R1-50. IGBT Power Module (V series) 1200V/450A/IGBT, ±900V/450A/RB-IGBT, 4-in-1 package. IGBT Modules. [Thermistor] [Inverter] 15")
IGBT Power Module ( series) 12/45A/IGBT, ±/45A/RBIGBT, 4in1 package Features Higher efficiency Optimized Advanced Ttype circuit ReveseBlocking IGBT as for AC Switch Low inductance module structure Applications
Items Symbols Conditions Maximum ratings Units Collector-Emitter voltage VCES 1200 V Gate-Emitter voltage VGES ±20 V
IGBT MODULE (V series) V / 9A / 1 in one package Features High speed switching Voltage drive Low Inductance module sucture Applications Inverter for Motor Drive AC and DC Servo Drive Amplifier Uninterruptible
4MBI900VB-120R1-50. IGBT Power Module (V series) 1200V/900A/IGBT, ±900V/900A/RB-IGBT, 4-in-1 package. IGBT Modules. [Thermistor] [Inverter] 15
![4MBI900VB-120R1-50. IGBT Power Module (V series) 1200V/900A/IGBT, ±900V/900A/RB-IGBT, 4-in-1 package. IGBT Modules. [Thermistor] [Inverter] 15](/thumbs/76/73103351.jpg "4MBI900VB-120R1-50. IGBT Power Module (V series) 1200V/900A/IGBT, ±900V/900A/RB-IGBT, 4-in-1 package. IGBT Modules. [Thermistor] [Inverter] 15")
4MBI9B12R15 IGBT Power Module ( series) 12/9A/IGBT, ±9/9A/RBIGBT, 4in1 package Features Higher efficiency Optimized Advanced Ttype circuit ReveseBlocking IGBT as for AC Switch Low inductance module structure
4MBI650VB-120R1-50. IGBT Power Module (V series) 1200V/650A/IGBT, ±900V/650A/RB-IGBT, 4-in-1 package. IGBT Modules. [Thermistor] 8.
![4MBI650VB-120R1-50. IGBT Power Module (V series) 1200V/650A/IGBT, ±900V/650A/RB-IGBT, 4-in-1 package. IGBT Modules. [Thermistor] 8.](/thumbs/72/67833924.jpg "4MBI650VB-120R1-50. IGBT Power Module (V series) 1200V/650A/IGBT, ±900V/650A/RB-IGBT, 4-in-1 package. IGBT Modules. [Thermistor] 8.")
4MBI65B12R15 IGBT Power Module ( series) 12/65A/IGBT, ±9/65A/RBIGBT, 4in1 package Features Higher efficiency Optimized Advanced Ttype circuit ReveseBlocking IGBT as for AC Switch Low inductance module
CP10TD1-24A. DIP-CIB 3Ø Converter + 3Ø Inverter + Brake 10 Amperes/1200 Volts
CP1TD1-24A Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 1697-18 (724) 92-7272 1 Amperes/12 Volts Outline Drawing and Circuit Diagram Dimensions Inches Millimeters A 2.68±.1 68.±.3 B 1.73±.2
Items Symbols Conditions Maximum ratings Units Collector-Emitter voltage VCES 1200 V Gate-Emitter voltage VGES ±20 V. Icp 1ms TC=100 C 7200
1MBI36VD-12P IGBT MODULE (V series) 36V / 12A / 1 in one package Features High speed switching Voltage drive Low Inductance module structure Applications Inverter for Motor Drive AC and DC Servo Drive
Items Symbols Conditions Maximum ratings Units Collector-Emitter voltage VCES 1700 V Gate-Emitter voltage VGES ±20 V
1MBI16VR-17E IGBT MODULE (V series) 17V / 16A / 1 in one package Features High speed switching Voltage drive Low Inductance module structure Applications Inverter for Motor Drive AC and DC Servo Drive
Items Symbols Conditions Maximum ratings Units Collector-Emitter voltage VCES 1200 V Gate-Emitter voltage VGES ±20 V. Icp 1ms 2400
1MBI12VC-12P IGBT MODULE (V series) 12V / 12A / 1 in one package Features High speed switching Voltage drive Low Inductance module structure Applications Inverter for Motor Drive AC and DC Servo Drive
MG200Q2YS60A(1200V/200A 2in1)
TOSHIBA IGBT Module Silicon N Channel IGBT (V/A in) High Power Switching Applications Motor Control Applications Integrates a complete half bridge power circuit and fault-signal output circuit in one package.
Items Symbols Conditions Maximum ratings Units Collector-Emitter voltage VCES 1700 V Gate-Emitter voltage VGES ±20 V
1MBI16VC-17E IGBT MODULE (V series) 17V / 16A / 1 in one package Features High speed switching Voltage drive Low Inductance module structure Applications Inverter for Motor Drive AC and DC Servo Drive
TOSHIBA IGBT Module Silicon N Channel IGBT MG400Q2YS60A
MGQYSA TOSHIBA IGBT Module Silicon N Channel IGBT MGQYSA High Power Switching Applications Motor Control Applications Integrates a complete half bridge power circuit and fault-signal output circuit in
High Power Rugged Type IGBT Module
ug. 29 High Power Rugged Type IGBT Module Description DWIN S IGBT 7DM3 Package devices are optimized to reduce losses and switching noise in high frequency power conditioning electrical systems. These
CM150TL-12NF. APPLICATION AC drive inverters & Servo controls, etc CM150TL-12NF. IC...150A VCES...600V Insulated Type 6-elements in a pack
CMTL-NF CMTL-NF IC... CES...6 Iulated Type 6-elements in a pack PPLICTION C drive inverters & Servo controls, etc OUTLINE DRWING & CIRCUIT DIGRM Dimeio in mm.6. 6 ±. -φ. MOUNTING HOLES N P WP P UP CN L
XI'AN IR-PERI Company
FineSiliconPowerNetworks HALF-BRIDGE IGBT Features Applications IGBT NPT Technology AC & DC Motor controls VCES = 1200V Ic = 75A VCE(ON) typ. = 2.8V @ Ic = 75A 10μs Short circuit capability Low turn-off
Features. Description. Table 1: Device summary. Order code Marking Package Packing STGYA120M65DF2AG G120M65DF2AG Max247 long leads Tube
Automotivegrade trench gate fieldstop IGBT, M series 650 V, 120 A low loss in a Max247 long leads package Datasheet production data Features AECQ101 qualified 6 µs of shortcircuit withstand time VCE(sat)
2MBI150HJ Power Module (V series) 1200V / 150A / 2-in-1 package G1 E1 C2E1. IGBT Modules
Power Module (V series) 1V / 15A / 2-in-1 package Features High speed switching Voltage drive Low Inductance module structure Applications Soft-switching Application Industrial machines,such as Welding
MPMD100B120RH NPT & Rugged Type 1200V IGBT Module. Features. conditioning. Applications. total losses. Equivalent Circuit 7DM-3. Welding Machine, UPS
General Description MagnaChip s IGBT Module 7DM3 package devices are optimized to reduce losses and switching noise in high frequency power conditioning electrical systems. These IGBT Module series are
SUSPM TM SEPT LUH75G1201_Preliminary LUH75G1201Z*_Preliminary. SUSPM1 94 X 34 X 30mm. 1200V 75A 2-Pack IGBT Module. Features.
SEPT. 9 LUH75G121_Preliminary LUH75G121Z*_Preliminary SUSPM TM 1V 75A 2-Pack IGBT Module Features Soft punch through IGBT(SPT + IGBT) - Low saturation voltage - Positive temperature coefficient - Fast
Symbol Rating Unit V V V V A A A W Vcc Vcc AC *9
6MBP5RTB6 IPMR3 series 6 / 5A 6 in onepackage Features Temperature protection provided by directly detecting the junction temperature of the IGBTs Low power loss and soft switching High performance and
EMP30P06D PIM+ Power module frame pins mapping. EMP Features:
Bulletin I27182 08/06 EMP30P06D PIM+ EMP Features: Power Module: NPT IGBTs 30A, 600V 10us Short Circuit capability Square RBSOA Low Vce (on) (2.05Vtyp @ 30A, 25 C) Positive Vce (on) temperature coefficient
D AB Z DETAIL "B" DETAIL "A"
QID1215 Preliminary Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (72) 925-7272 www.pwrx.com Split Dual Si/SiC Hybrid IGBT Module 1 Amperes/12 Volts Y A AA F D AB Z AC Q DETAIL "B" Q
Features TO-264 E. Symbol Description SGL50N60RUFD Units V CES Collector-Emitter Voltage 600 V V GES Gate-Emitter Voltage ± 20 V Collector T
Short Circuit Rated IGBT General Description Fairchild's RUFD series of Insulated Gate Bipolar Transistors (IGBTs) provide low conduction and switching losses as well as short circuit ruggedness. The RUFD
6MBP150RA060. IGBT-IPM R series. 600V / 150A 6 in one-package. Features. Maximum ratings and characteristics
6MBP15RA6 IGBTIPM R series 6 / 15A 6 in onepackage Features Temperature protection provided by directly detecting the junction temperature of the IGBTs Low power loss and soft switching High performance
Trench gate field-stop IGBT, HB series 650 V, 40 A high speed. Features. Description
Trench gate field-stop IGBT, HB series 650 V, 40 A high speed Datasheet - production data Features Maximum junction temperature: TJ = 175 C High speed switching series Minimized tail current Low saturation
Trench gate field-stop IGBT, HB series 650 V, 40 A high speed. Features. Description
Trench gate field-stop IGBT, HB series 650 V, 40 A high speed Datasheet - production data TAB 3 2 1 TO-3P Figure 1: Internal schematic diagram Features Maximum junction temperature: TJ = 175 C High speed
Item Symbol Condition Value Units V C = 25 C 1200 V V C = 25 C ±20
LVHG121_Preliminary LVHG121Z*_Preliminary Features Soft punch through IGBT(SPT + IGBT) - Low saturation voltage - Positive temperature coefficient - Fast switching - High ruggedness Free wheeling diodes
Tjop. Viso AC : 1min VAC. Screw torque Mounting (*3) - M5 3.5 N m
7MBRVB IGBT MODULE (V series) 12V / A / PIM Features Low VCE(sat) Compact Package P.C.Board Mount Module Converter Diode Bridge Dynamic Brake Circuit RoHS compliant product Applications Inverter for Motor
STGW80H65DFB, STGWT80H65DFB
STGW80H65DFB, STGWT80H65DFB Trench gate fieldstop IGBT, HB series 650 V, 80 A high speed Datasheet production data TAB 3 2 1 TO247 TO3P Figure 1: Internal schematic diagram 1 3 2 Features Maximum junction
SKM200GAH123DKL 1200V 200A CHOPPER Module August 2011 PRELIMINARY RoHS Compliant
SKM2GAH123DKL 12V 2A CHOPPER Module August 211 PRELIMINARY RoHS Compliant FEATURES Ultra Low Loss High Ruggedness High Short Circuit Capability V CE(sat) With Positive Temperature Coefficient With Fast
Symbol Parameters Test Conditions Min Typ Max Unit R thjc. Per IGBT 0.09 K/W R thjcd
2V 2A IGBT Module RoHS Features Ultra low loss High ruggedness High short circuit capability Positive temperature coefficient With fast free-wheeling diodes Agency Approvals Applications Inverter Converter
CM600YE2N-12F / CM600YE2P-12F TLI-Series (Three Level Inverter) IGBT 600 Amperes/600 Volts
CM6YN-12F / CM6YP-12F TLI-Series (Three Level Inverter) IGBT P V Q W Q V R P S J Y, Z U (2 PLACES) L ( PLACES) M N K (3 PLACES) Y, Z G F E B CM6YN-12F D A X T C Outline Drawing and Circuit Diagram RTC
Item Symbol Condition Value Units V C = 25 C 1200 V V C = 25 C ±20
LUHG121_Preliminary LUHG121Z*_Preliminary SEPT. 29 SUSPM TM 12V A 2-Pack IGBT Module Features Soft punch through IGBT(SPT + IGBT) - Low saturation voltage - Positive temperature coefficient - Fast switching
IGBT STARPOWER SEMICONDUCTOR TM. Molding Type Module. 1200V/10A PIM in one-package. General Description. Features. Typical Applications
STRPOWER SEMICONDUCTOR TM IGBT GD10PJK120L1S Preliminary Molding Type Module 1200/10 PIM in one-package General Description STRPOWER IGBT Power Module provides ultra low conduction and switching loss as
STGW40H120DF2, STGWA40H120DF2
STGW4H12DF2, STGWA4H12DF2 Trench gate field-stop IGBT, H series 12 V, 4 A high speed Datasheet - production data Features Maximum junction temperature: TJ = 175 C High speed switching series Minimized
7MBR35VJB Power Module (V series) 1200V / 35A / PIM. IGBT Modules
7MBR35JB25 Power Module ( series) 2 / 35 / PIM Features Low CE(sat) Compact Package P.C.Board Mount Module Conveter Diode Bridge Dynamic Brake Circuit RoHS compliant product pplications Inverter for Motor
Icp 1ms TC=80 C 100 -IC 50. IC Continuous TC=80 C 35 ICP 1ms TC=80 C 70. Inverter, Brake 175 Converter 150 Operating junciton temperature
7MBR5VB1 IGBT MODULE (V series) 12V / 5A / PIM Features Low VCE(sat) Compact Package P.C.Board Mount Module Converter Diode Bridge Dynamic Brake Circuit RoHS compliant product Applications Inverter for
Collector-Emitter voltage VCES 1200 V Gate-Emitter voltage VGES ±20 V Ic Continuous Tc=100 C 50
7MBR5VP1 IGBT MODULE (V series) 12V / 5A / PIM Features Low VCE(sat) Compact Package P.C.Board Mount Module Converter Diode Bridge Dynamic Brake Circuit RoHS compliant product Applications Inverter for
Trench gate field-stop IGBT, M series 650 V, 120 A low loss in a Max247 long leads package. Features. Description. Table 1: Device summary
Trench gate field-stop IGBT, M series 650 V, 120 A low loss in a Max247 long leads package Datasheet - production data Features 6 µs of short-circuit withstand time VCE(sat) = 1.65 V (typ.) @ IC = 120
FGL60N100BNTD 1000 V, 60 A NPT Trench IGBT
FGLNBNTD V, A NPT Trench IGBT Features High Speed Switching Low Saturation Voltage: V CE(sat) =.5 V @ = A High Input Impedance Built-in Fast Recovery Diode Applications UPS, Welder General Description
VCC 320V, VGE=15V Tj 150 C. Emitter IGBT Max. Power Dissipation PD_IGBT 360 W
FGW5NVD (High-Speed V series) V / 5A Features Low power loss Low switching surge and noise High reliability, high ruggedness (RBSOA, SCSOA etc.) Applications Inverter for Motor drive AC and DC Servo drive
MIDA-HB12FA-600N IGBT module datasheet
Low Inductance IGBT Module with 17 mm Height Housing 1 V A Chip features IGBT chip o Trench FS V-Series IGBT (Fuji 6 th gen) o low VCE(sat) value o µs short circuit duration at 15 C o square RBSOA of 2xIC
Trench gate field-stop IGBT, HB series 650 V, 20 A high speed. Features. Description
Trench gate fieldstop IGBT, HB series 650 V, 20 A high speed Datasheet production data TAB 3 2 1 TO3P Figure 1: Internal schematic diagram Features Maximum junction temperature: TJ = 175 C Minimized tail
Symbol Parameter/Test Conditions Values. 200 P tot Power Dissipation Per IGBT T C =25, T Jmax = Symbol Parameter/Test Conditions Values
MMG1W6X6EN 6 1 Six-Pack Module February 17 ersion 1 RoHS Compliant PRODUCT FETURES IGBT 3 Chip(Trench+Field Stop technology) High short circuit capability,self limiting short circuit current Low saturation
IGBT Module Sixpack MWI 25-12A7(T) I C25 = 50 A V CES = 1200 V V CE(sat) typ. = 2.2 V. Short Circuit SOA Capability Square RBSOA
MWI 25127(T) IGBT Module Sixpack Short Circuit SO Capability Square RBSO I C25 = 50 CES = 1200 CE(sat) typ. = 2.2 Part name (Marking on product) MWI25127 MWI25127T 13 T version 1 5 9 T 2 10 1 15 14 E72873
Y (4 PLACES) G1W E1W G2W E2W U V W G3W E3W G4W RTC RTC RTC E4U E4W. AF JST Connector AWG Wire # SXH-001T-P ~ 22 or SXH-002T-P0.
owerex, Inc., 173 avilion ane, Youngwood, ennsylvania 15697 (72) 925-7272 www.pwrx.com TI-Series (Three evel Inverter) IGBT 75 Amperes/6 Volts A H J X B E F N W AD, AF AE, AF AD, AF A D B F G M V Outline
Features. Description. Table 1: Device summary. Order code Marking Package Packing STGW10M65DF2 G10M65DF2 TO-247 Tube
Trench gate field-stop IGBT, M series 650 V, 10 A low-loss in TO-247 package Datasheet - production data 3 2 1 TO-247 Figure 1: Internal schematic diagram Features 6 µs of short-circuit withstand time
IGBT Highspeed5FASTIGBTinTRENCHSTOP TM 5technologycopackedwithRAPID1 fastandsoftantiparalleldiode
IGBT Highspeed5FASTIGBTinTRENCHSTOP TM 5technologycopackedwithRAPID fastandsoftantiparalleldiode IKP4N65F5,IKW4N65F5 65VDuoPackIGBTandDiode Highspeedswitchingseriesfifthgeneration Datasheet IndustrialPowerControl
Features. Applications. Characteristics Symbol Rating Unit. T C=25 o C I C. T C=80 o C 100 A. Operating Junction Temperature Tj -55~150
General Description MagnaChip s IGBT Module 7DM-1 package devices are optimized to reduce losses and switching noise in high frequency power conditioning electrical systems. These IGBT Module series are
MPMC100B120RH NPT & Rugged Type 1200V IGBT Module
General Description MagnaChip s IGBT Module 7DM- package devices are optimized to reduce losses and switching noise in high frequency power conditioning electrical systems. These IGBT Module series are
Features. Description. NG4K3E2C1_no_d. Table 1: Device summary Order code Marking Package Packaging STGW80H65FB-4 G80H65FB TO247-4 Tube
Trench gate field-stop IGBT, HB series 650 V, 80 A high speed in TO247-4 package Datasheet - production data Features VCE(sat) = 1.6 V (typ.) @ IC = 80 A Maximum junction temperature: TJ = 175 C High speed
MMG50S120B6UC. 1200V 50A IGBT Module. Preliminary PRODUCT FEATURES APPLICATIONS
December 28 Preliminary MMG5S2B6UC 2 5 IGBT Module RoHS Compliant PRODUCT FETURES IGBT chip in trench FS-technology Low switching losses CE(sat) with positive temperature coefficient Fast switching and
V CES = 1200V I C = Tc = 80 C. T c = 25 C 1050 T c = 80 C 875
APTGL875U12DAG Single switch with Series diode Trench + Field Stop IGBT4 CES = 12 I C = 875A @ Tc = 8 C EK E G C CK Application Zero Current Switching resonant mode Features Trench + Field Stop IGBT 4
ICP 1ms TC=80 C 50. IC Continuous TC=80 C 25. Inverter, Brake 175 Converter 150 Operating junciton temperature
7MBR5VM5 IGBT MODULE (V series) V / 5A / PIM Features Low VCE(sat) Compact Package P.C.Board Mount Module Converter Diode Bridge Dynamic Brake Circuit RoHS compliant product Applications Inverter for Motor
6MBP75VFN IGBT Module (V series) 600V / 75A / IPM. IGBT Modules
MBP75FN5 IGBT Module ( series) / 75A / IPM Features Temperature protection provided by directly detecting the junction temperature of the IGBTs Low power loss and soft switching High performance and high
6MBP100VFN IGBT Module (V series) 600V / 100A / IPM. IGBT Modules
MBPFN5 IGBT Module ( series) / A / IPM Features Temperature protection provided by directly detecting the junction temperature of the IGBTs Low power loss and soft switching High performance and high reliability
Item Symbol Unit MBM1000FS17G Collector Emitter Voltage V CES V 1,700 Gate Emitter Voltage V GES V 20 Collector Current
IGBT MODULE Silicon N-channel IGBT 17V G version Spec.No.IGBT-SP-163 R P 1 FEATURES High current density package Low stray inductance & low Rth(j-c) Half-bridge (2in1) Built in temperature sensor Scalable
MG400V2YS60A MG400V2YS60A. High Power Switching Applications Motor Control Applications. Equivalent Circuit
MGV2YS6A TOSHIBA IGBT Module Silicon N Channel IGBT MGV2YS6A High Power Switching Applications Motor Control Applications Unit in mm The electrodes are isolated from case. Enhancement mode Thermal output
Trench gate field-stop IGBT M series, 650 V, 15 A low-loss in a TO-220FP package. Features. Description
Trench gate field-stop IGBT M series, 650 V, 15 A low-loss in a TO-220FP package Datasheet - production data Features 6 μs of short-circuit withstand time VCE(sat) = 1.55 V (typ.) @ IC = 15 A Tight parameter
Trench gate field-stop IGBT, HB series 650 V, 40 A high speed in a TO247-4 package
Trench gate field-stop IGBT, HB series 650 V, 40 A high speed in a TO247-4 package Datasheet - production data Features Maximum junction temperature: TJ = 175 C Kelvin pin Minimized tail current Low saturation
Trench gate field-stop, 1200 V, 25 A, low-loss M series IGBT in a TO-247 package
Datasheet Trench gate fieldstop, 2 V, 25 A, lowloss M series IGBT in a TO247 package Features TO247 3 2 Maximum junction temperature: T J = 75 C μs of shortcircuit withstand time Low V CE(sat) =.85 V (typ.)
MPMB75B120RH NPT & Rugged Type 1200V IGBT Module. Features. Applications. devices are. total losses. Equivalent Circuit 7DM-1 E301932
General Description MagnaChip s IGBT Module 7DM- package devices are optimized to reduce losses and switching noise in high frequency power conditioning electrical systems. These IGBT Module series are
Trench gate field-stop IGBT, HB series 650 V, 40 A high speed. Features. Description G1C2TE3
Trench gate field-stop IGBT, HB series 650 V, 40 A high speed Datasheet - production data TAB 2 3 1 D²PAK Figure 1: Internal schematic diagram C(2, TAB) G(1) E(3) Features Maximum junction temperature:
Package. Absolute maximum ratings (Ta=25 ) Characteristic Symbol Ratings Unit
Oct.2 Features Built-in IGBT and diode bridge of partial switching PFC circuit Enable to reduce mounting area Low saturation voltage IGBT VCE(sat) =.7V max Low saturation voltage diode bridge VF =.V max
IGBT Module Sixpack MWI 15-12A7. I C25 = 30 A V CES = 1200 V V CE(sat) typ. = 2.0 V. Short Circuit SOA Capability Square RBSOA
MWI 15127 IGBT Module Sixpack Short Circuit SO Capability Square RBSO I C25 = 30 CES = 1200 CE(sat) typ. = 2.0 Part name (Marking on product) MWI15127 13 1 5 9 2 10 1 15 14 E72873 Pin confi guration see