CM150TL-12NF. APPLICATION AC drive inverters & Servo controls, etc CM150TL-12NF. IC...150A VCES...600V Insulated Type 6-elements in a pack
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1 CMTL-NF CMTL-NF IC... CES...6 Iulated Type 6-elements in a pack PPLICTION C drive inverters & Servo controls, etc OUTLINE DRWING & CIRCUIT DIGRM Dimeio in mm.6. 6 ±. -φ. MOUNTING HOLES N P WP P UP CN L E L U W 6-M NUTS. (.). (9.) +. (SCREWING DEPTH) 6. Housing Type of and (J.S.T.Mfg.Co.Ltd) = P-H-F-, = P-H-F- P CN- CN- N UP- UP- U CN- CN-6 P- P- CN- CN- WP- WP- CN- CN- W CIRCUIT DIGRM Feb. 9
2 CMTL-NF SOLUTE MXIMUM RTINGS (Tj = C, unless otherwise specified) Symbol CES GES IC ICM IE (Note ) IEM (Note ) PC (Note ) Tj Tstg iso Parameter Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Torque strength Weight Conditio G-E Short C-E Short DC, TC = 9 C * Pulse (Note ) Pulse (Note ) TC = C Terminals to base plate, f = 6Hz, C minute Main terminals M screw Mounting M screw Typical value Ratings 6 ± ~ + ~ +. ~.. ~. Unit W C C rms N m N m g ELECTRICL CHRCTERISTICS (Tj = C, unless otherwise specified) Symbol ICES Parameter Collector cutoff current CE = CES, GE = Test conditio Min. Limits Typ. Max. Unit m GE(th) IGES CE(sat) Cies Coes Cres QG td(on) tr td(off) tf trr (Note ) Qrr (Note ) EC(Note ) Rth(j-c)Q Rth(j-c)R Rth(c-f) RG Gate-emitter threshold voltage Gate leakage current Collector-emitter saturation voltage Input capacitance Output capacitance Reverse trafer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge Emitter-collector voltage Thermal resistance Contact thermal resistance External gate resistance IC = m, CE = ±GE = GES, CE = IC =, GE = CE = GE = CC =, IC =, GE = CC =, IC = GE = ± RG =.Ω, IE = Tj = C Tj = C IE =, GE = IGT part (/6 module) * FWDi part (/6 module) * Case to heat sink, Thermal compound pplied (/6 module) * * : Case temperature (Tc) measured point is just under the chips. If you use this value, Rth(f-a) should be measured just under the chips. * : Typical value is measured by using thermally conductive grease of λ =.9[W/(m K)]. Note. IE, EC, trr & Qrr represent characteristics of the anti-parallel, emitter-collector free-wheel diode (FWDi).. Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tjmax rating.. Junction temperature (Tj) should not increase beyond C.. Pulse width and repetition rate should be such as to cause negligible temperature rise µ nc µc Ω Feb. 9
3 CMTL-NF PERFORME CURES COLLECTOR CURRENT IC () OUTPUT CHRCTERISTICS GE = Tj = C 6 COLLECTOR-EMITTER OLTGE CE () 9 COLLECTOR-EMITTER STURTION OLTGE CE (sat) () COLLECTOR-EMITTER STURTION OLTGE CHRCTERISTICS GE = Tj = C Tj = C COLLECTOR CURRENT IC () COLLECTOR-EMITTER STURTION OLTGE CE (sat) () 6 COLLECTOR-EMITTER STURTION OLTGE CHRCTERISTICS Tj = C IC = IC = IC = EMITTER CURRENT IE () FREE-WHEEL DIODE FORWRD CHRCTERISTICS Tj = C Tj = C GTE-EMITTER OLTGE GE () EMITTER-COLLECTOR OLTGE EC () CPCITE Cies, Coes, Cres () CPCITE CE CHRCTERISTICS Cies Coes Cres GE = SWITCHING TIME () HLF-RIDGE SWITCHING CHRCTERISTICS td(off) td(on) tr CC = GE = ± RG =.Ω Tj = C tf COLLECTOR-EMITTER OLTGE CE () COLLECTOR CURRENT IC () Feb. 9
4 CMTL-NF REERSE RECOERY TIME trr () REERSE RECOERY CURRENT lrr () REERSE RECOERY CHRCTERISTICS OF FREE-WHEEL DIODE Irr trr CC = GE = ± RG =.Ω Tj = C NORMLIZED TRNSIENT THERML IMPEDE Zth (j c) (ratio) TRNSIENT THERML IMPEDE CHRCTERISTICS (IGT part & FWDi part) Single Pulse, TC = C Under the chip IGT part: Per unit base = Rth(j c) =. FWDi part: Per unit base = Rth(j c) =. EMITTER CURRENT IE () TIME (s) SWITCHING LOSS (mj/pulse) SWITCHING LOSS vs. COLLECTOR CURRENT Esw(off) Esw(on) CC = GE = ± RG =.Ω Tj = C SWITCHING LOSS (mj/pulse) SWITCHING LOSS vs. GTE RESISTE CC = GE = ± IC = Tj = C Esw(off) Esw(on) COLLECTOR CURRENT IC () GTE RESISTE RG (Ω) RECOERY LOSS (mj/pulse) RECOERY LOSS vs. IE Err CC = GE = ± RG =.Ω Tj = C RECOERY LOSS (mj/pulse) RECOERY LOSS vs. GTE RESISTE Err CC = GE = ± IE = Tj = C EMITTER CURRENT IE () GTE RESISTE RG (Ω) Feb. 9
5 CMTL-NF GTE-EMITTER OLTGE GE () 6 IC = GTE CHRGE CHRCTERISTICS CC = CC = 6 GTE CHRGE QG (nc) Feb. 9
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More informationItems Symbols Conditions Maximum ratings Units Collector-Emitter voltage VCES 1200 V Gate-Emitter voltage VGES ±20 V
IGBT MODULE (V series) V / 9A / 1 in one package Features High speed switching Voltage drive Low Inductance module sucture Applications Inverter for Motor Drive AC and DC Servo Drive Amplifier Uninterruptible
More informationSUSPM TM SEPT LUH75G1201_Preliminary LUH75G1201Z*_Preliminary. SUSPM1 94 X 34 X 30mm. 1200V 75A 2-Pack IGBT Module. Features.
SEPT. 9 LUH75G121_Preliminary LUH75G121Z*_Preliminary SUSPM TM 1V 75A 2-Pack IGBT Module Features Soft punch through IGBT(SPT + IGBT) - Low saturation voltage - Positive temperature coefficient - Fast
More informationL M DETAIL "A" SIGNAL TERMINAL 3 E(L) 4 V D 5 G(H) 6 F O (H) 7 E(H) 8 OPEN
MG3QYSA Powerex, Inc., E. Hillis Street, Youngwood, Pennsylvania 1597-1 (7) 95-77 Compact IGBT Series Module 3 Amperes/1 Volts J A D K L M N W V E C1 C DETAIL "A" H B F E CE1 U W Outline Drawing and Circuit
More informationL M DETAIL "A" SIGNAL TERMINAL 3 E(L) 4 V D 5 G(H) 6 F O (H) 7 E(H) 8 OPEN
MGQYSA Powerex, Inc., E. Hillis Street, Youngwood, Pennsylvania 1597-1 (7) 95-77 Compact IGBT Series Module Amperes/1 Volts J A D K L M N W V E C1 C DETAIL "A" H B F E CE1 U W Outline Drawing and Circuit
More information< IGBT MODULES > CM50MXA-24S HIGH POWER SWITCHING USE INSULATED TYPE APPLICATION
CIB (Converter+Inverter+Chopper Brake) APPLICATION AC Motor Control, Motion/Servo Control, Power supply, etc. OUTLINE DRAWING & INTERNAL CONNECTION Collector current I C...... 5A Collector-emitter voltage
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QMH-H QMH-H IC Collector current... CX Collector-emitter voltage... hf current gain... Insulated Type UL Recognized Yellow Card No. 86 (N) File No. 8 PPLICTION C motor controllers, UPS, motor controllers,
More informationItems Symbols Conditions Maximum ratings Units Collector-Emitter voltage VCES 1700 V Gate-Emitter voltage VGES ±20 V
1MBI16VC-17E IGBT MODULE (V series) 17V / 16A / 1 in one package Features High speed switching Voltage drive Low Inductance module structure Applications Inverter for Motor Drive AC and DC Servo Drive
More informationTrench gate field-stop IGBT, M series 650 V, 120 A low loss in a Max247 long leads package. Features. Description. Table 1: Device summary
Trench gate field-stop IGBT, M series 650 V, 120 A low loss in a Max247 long leads package Datasheet - production data Features 6 µs of short-circuit withstand time VCE(sat) = 1.65 V (typ.) @ IC = 120
More informationnot Recommend for New Design TM130DZ/CZ/PZ-M,-H HIGH POWER GENERAL USE
TMDZ/CZ/PZ-M,-H TMDZ/CZ/PZ-M,-H (DZ Type) PPLICTION DC motor control, NC equipment, C motor control, Contactless switches, Electric furnace temperature control, Light dimmers OUTLINE DRWING & CIRCUIT DIGRM
More informationFeatures. n-channel TO-247AC. 1
INSULTED GTE BIPOLR TRNSISTOR WITH ULTRFST SOFT RECOVERY DIODE Features Fast: Optimized for medium operating frequencies ( -5 khz in hard switching, >2 khz in resonant mode). Generation 4 IGBT design provides
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MITSUBISHI FLT-BSE TYE TYE FETURE a) dopting new 4th generation planar IGBT chip, which performance is improved by 1µm fine rule process. b) Using new Diode which is designed
More informationFeatures. Description. Table 1: Device summary. Order code Marking Package Packing STGYA120M65DF2AG G120M65DF2AG Max247 long leads Tube
Automotivegrade trench gate fieldstop IGBT, M series 650 V, 120 A low loss in a Max247 long leads package Datasheet production data Features AECQ101 qualified 6 µs of shortcircuit withstand time VCE(sat)
More informationFeatures. n-channel TO-247AC. 1
INSULTED GTE BIPOLR TRNSISTOR WITH ULTRFST SOFT RECOVERY DIODE Features Fast: Optimized for medium operating frequencies ( -5 khz in hard switching, >2 khz in resonant mode). Generation 4 IGBT design provides
More informationItem Symbol Condition Value Units V C = 25 C 1200 V V C = 25 C ±20
LVHG121_Preliminary LVHG121Z*_Preliminary Features Soft punch through IGBT(SPT + IGBT) - Low saturation voltage - Positive temperature coefficient - Fast switching - High ruggedness Free wheeling diodes
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7MBR35VKB125 IGBT MODULE (V series) 12V / 35A / PIM Features Low VCE(sat) Compact Package P.C.Board Mount Module Converter Diode Bridge Dynamic Brake Circuit RoHS compliant product Applications Inverter
More informationTrench gate field-stop IGBT, HB series 650 V, 40 A high speed. Features. Description
Trench gate field-stop IGBT, HB series 650 V, 40 A high speed Datasheet - production data Features Maximum junction temperature: TJ = 175 C High speed switching series Minimized tail current Low saturation
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MBIVA5 IGBT MODULE (V series) V / A / in one package Features Compact Package P.C.Board Mount Low VCE (sat) Applications Inverter for Motor Drive AC and DC Servo Drive Amplifier Uninterruptible Power Supply
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Trench gate field-stop IGBT M series, 650 V, 15 A low-loss in a TO-220FP package Datasheet - production data Features 6 μs of short-circuit withstand time VCE(sat) = 1.55 V (typ.) @ IC = 15 A Tight parameter
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7MBR3VKA65 IGBT MODULE (V series) 6V / 3A / PIM Features Low VCE(sat) Compact Package P.C.Board Mount Module Converter Diode Bridge Dynamic Brake Circuit RoHS compliant product Applications Inverter for
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Typical applications: AC and DC electric motor control Frequency transformer UPS Industry power supply Electric welding machine Characteristics: SPT chip (soft-punch-through) MOS input control Ultra thin
More informationApplications: AC motor drives Solar inverter Air-conditioning systems high power converters UPS
IGBT Module MITH300PF1200LP CES I C25 CE(sat) = 1200 = 420 = 1.85 Phase leg Part number MITH300PF1200LP Features / dvantages: Trench IGBT - low CE(sat) - easy paralleling due to the positive temperature
More informationTrench gate field-stop IGBT, HB series 650 V, 40 A high speed. Features. Description
Trench gate field-stop IGBT, HB series 650 V, 40 A high speed Datasheet - production data TAB 3 2 1 TO-3P Figure 1: Internal schematic diagram Features Maximum junction temperature: TJ = 175 C High speed
More informationVCC 320V, VGE=15V Tj 150 C. Emitter IGBT Max. Power Dissipation PD_IGBT 360 W
FGW5NVD (High-Speed V series) V / 5A Features Low power loss Low switching surge and noise High reliability, high ruggedness (RBSOA, SCSOA etc.) Applications Inverter for Motor drive AC and DC Servo drive
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7MBRVKC IGBT MODULE (V series) V / A / PIM Features Low VCE(sat) Compact Package P.C.Board Mount Module Converter Diode Bridge Dynamic Brake Circuit RoHS compliant product Applications Inverter for Motor
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owerex, Inc., 173 avilion ane, Youngwood, ennsylvania 15697 (72) 925-7272 www.pwrx.com TI-Series (Three evel Inverter) IGBT 75 Amperes/6 Volts A H J X B E F N W AD, AF AE, AF AD, AF A D B F G M V Outline
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IGBT MODULE (V series) V / 35A / PIM Features Low VCE(sat) Compact Package P.C.Board Mount Module Converter Diode Bridge Dynamic Brake Circuit RoHS compliant product Applications Inverter for Motor Drive
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