6MBP100VFN IGBT Module (V series) 600V / 100A / IPM. IGBT Modules

Size: px
Start display at page:

Download "6MBP100VFN IGBT Module (V series) 600V / 100A / IPM. IGBT Modules"

Transcription

1 MBPFN5 IGBT Module ( series) / A / IPM Features Temperature protection provided by directly detecting the junction temperature of the IGBTs Low power loss and soft switching High performance and high reliability IGBT with overheating protection Higher reliability because of a big decrease in number of parts in builtin control circuit Outline drawing ( Unit : mm ) Weight:9g(typ.) 4/

2 MBPFN5 Absolute Maximum Ratings TC=5,CC=5 unless otherwise specified. Items CollectorEmitter oltage * Short Circuit oltage Inverter Brake DC Collector Current ms Duty=% * Collector Power Dissipation device *3 Collector Current DC ms Forward Current of Diode Collector Power Dissipation device *3 Supply oltage of PreDriver *4 Input Signal oltage *5 Alarm Signal oltage * Alarm Signal Current *7 Junction Temperature Operating Case Temperature Storage Temperature Solder Temperature *8 Isolating oltage *9 Symbol Min. Max. Units CES SC 4 IC A ICP A IC A PC 43 W IC A ICP A IF A PC W CC.5 in.5 cc+.5 ALM.5 cc IALM ma Tj 5 Topr Tstg 4 5 Tsol iso AC5 rms Screw Torque Mounting (M4).7 Nm Notes *: CES shall be applied to the input voltage between terminal P(U,, W,B) and (U,, W,B)N. *: Duty=5 /Rth(jc)D/(IF F Max.) *3: PC=5 /Rth(jc)Q (Inverter & Brake) *4: CC shall be applied to the input voltage between terminal No.4 and, 8 and 5, and 9,4 and 3. *5: in shall be applied to the input voltage between terminal No.3 and, 7 and 5, and 9,5~8 and 3. *: ALM shall be applied to the voltage between terminal No. and, and 5, and 9,9 and 3. *7: IALM shall be applied to the input current to terminal No.,, and 9. *8: Immersion time ±sec. time *9: Terminal to base, 5/Hz sine wave min. All terminals should be connected together during the test. Electrical Characteristics(Tj=5,CC=5 unless otherwise specified.) Main circuit Item Symbol Conditions Min. Typ. Max. Units Collector Current CE =. ma ICES at off signal input CollectorEmitter IC =A Terminal.95 CE(sat) saturation voltage Chip.5 IF =A Terminal. Forward voltage of FWD F Chip. Collector Current CE = ma ICES at off signal input CollectorEmitter IC = Terminal CE(sat) saturation voltage Chip IF Forward voltage of FWD = Terminal F Chip ton DC =3, Tj=5. μs toff IC =A. μs Switching time DC =3.3 μs trr IF =A Inverter Brake 4/

3 MBPFN5 Control circuit Supply current of Pside predriver (per one unit) Supply current of Nside predriver Item Symbol Conditions Min. Typ. Max. Units 7 ma Input signal threshold voltage Protection Circuit Iccp Iccn Thermal Characteristics (TC = 5 ) inth(on) ON..4. ingnd inth(off) OFF Item Symbol Min. Typ. Max. Units IGBT Rth(jc)Q.3 /W Junction to Case Inverter FWD Rth(jc)D.55 /W Thermal Resistance* IGBT Rth(jc)Q /W Brake FWD Rth(jc)D /W Case to Fin Thermal Resistance with Compound Rth(cf).5 /W *: For device,the measurement point of the case is just under the chip. Noise Immunity (DC=3, CC=5) Item Conditions Min. Typ. Max. Units Common mode Pulse width μs,polarity ±,min. ±. k rectangular noise Judge:no overcurrent, no miss operating Recommended Operating Conditions Switching Frequency = 5kHz Tc=~ 5 ma Item Symbol Conditions Min. Typ. Max. Units Over Current Inverter A IOC Tj=5 Protection Level Brake Resistance Load A Over Current Protection Delay time tdoc Tj=5 5 μs Short Circuit Protection Delay time tsc Tj=5 3 μs IGBT Chips Over Heating Surface of 5 TjOH Protection Temperature Level IGBT Chips Over Heating Protection Hysteresis Under oltage Protection Level Under oltage Protection Hysteresi TjH U H Alarm Signal Hold Time talm(oc) ALMGND...4 ms talm(u) cc ms Tc=~ talm(tjoh) ms Resistance for current limit RALM Ω Item Symbol Min. Typ. Max. Units DC Bus oltage Power Supply oltage of PreDriver Switching frequency of IPM Arm shoot through blocking time for IPM's input signal Screw Torque (M4) DC CC fsw tdead khz μs Nm 3 4/

4 MBPFN5 Block Diagram ccu 4 inu 3 ALMU GNDU cc 8 in 7 ALM GND 5 ccw inw ALM W GNDW 9 cc 4 inx R ALM R ALM R ALM P U W GND 3 iny 7 inz 8 Pre Pre Pre Pre Pre Pre 5 B ALM 9 R ALM N Predrivers include following functions. Amplifier for driver. Short circuit protection 3. Under voltage lockout circuit 4. Over current protection 5. IGBT chip over heating protection 4 4/

5 MBPFN5 Characteristics (Representative) Control Circuit Power supply current : ICC [ ma ] Power supply current vs. Switching frequency Tj= 5 (typ.) Nside Pside Switchig frequency : fsw [ khz ] cc=7 cc=5 cc=3 cc=7 cc=5 cc=3 Under voltage vs. Junction temperature (typ.) Input signal threshold voltage : inth(on),inth(off) [ ] Input signal threshold voltage vs. Power supply voltage (typ.) Tc=5~ Power supply voltage : CC [ ] Under voltage hysterisis vs. Junction temperature (typ.) inth(off) inth(on) Under voltage : UT [ ] Under voltage hysterisis : H [ ] Junction temperature : Tj [ ] Junction temperature : Tj [ ] Alarm hold time vs. Power supply voltage (typ.) Over heating characteristics TjOH,TjH vs. CC (typ.) Alarm hold time : talm [ msec ] talm(tjoh) 8 4 talm(oc) Power supply voltage : CC [ ] Over heating protection: TjOH [ ] OH hysterisis : TjH [ ] 5 5 TjOH TjH Power supply voltage : CC [ ] 5 4/

6 MBPFN5 Inverter Collector current vs. CollectorEmitter voltage Tj=5 [Chip] (typ.) Collector current vs. CollectorEmitter voltage Tj=5 [Terminal] (typ.) 5 5 CC=7 CC=5 CC=3 5 5 CC=7 CC=5 CC= CollectorEmitter voltage : CE [ ] CollectorEmitter voltage : CE [ ] Collector current vs. CollectorEmitter voltage Tj=5 [Chip] (typ.) Collector current vs. CollectorEmitter voltage Tj=5 [Terminal] (typ.) CC=5 CC=5 5 5 CC=7 CC=3 5 5 CC=7 CC= CollectorEmitter voltage : CE [ ] CollectorEmitter voltage : CE [ ] Forward current vs. Forward voltage [Chip] (typ.) Forward current vs. Forward voltage [Terminal] (typ.) Forward current : I F [ A ] 5 5 Tj=5 Tj=5 Forward current : I F [ A ] 5 5 Tj=5 Tj= Forward voltage : F [ ] Forward voltage : F [ ] 4/

7 MBPFN5 Switching loss :Eon,Eoff,Err [mj/cycle] Switching Loss vs. Collector Current (typ.) DC=3,CC=5,Tj=5 Eon 5 5 Eoff Err Reversed biased safe operating area cc=5,tj 5 Switching loss :Eon,Eoff,Err [mj/cycle] 8 4 Switching Loss vs. Collector Current (typ.) DC=3,CC=5,Tj=5 Eon Eoff Err 5 5 Transient thermal resistance (max.) Collector current : I C [ A ] 3 RBSOA (Repetitive pulse) CollectorEmitter voltage : CE [ ] Thermal resistance : Rth(jc) [ /W ]..... Pulse width : PW [ sec ] FWD IGBT 5 Power derating for IGBT (max.) [per device] 3 Power derating for FWD (max.) [per device] Collector Power Dissipation : P C [W] 4 3 Collector Power Dissipation : P C [W] Case Temperature : TC [ ] Case Temperature : TC [ ] 7 4/

8 MBPFN5 Switching time vs. Collector current (typ.) DC=3,CC=5,Tj=5 Switching time vs. Collector current (typ.) DC=3,CC=5,Tj=5 Switching time : ton,toff,tf [ nsec ] ton toff tf 5 5 Switching time : ton,toff,tf [ nsec ] ton toff tf 5 5 Reverse recovery characteristics (typ.) trr,irr vs. IF 5 Over current protection vs. Junction temperature (typ.) CC=5 Reverse recovery current : Irr [A] Reverse recovery time : trr [nsec] trr Tj=5 trr Tj=5 Irr Tj=5 Irr Tj=5 5 5 Over current protection level : IOC [A] Forward current : IF [ A ] Junction temperature : Tj [ ] 8 4/

9 MBPFN5 Warnings. This Catalog contains the product specifications, characteristics, data, materials, and structures as of /4. The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this Catalog, be sure to obtain the latest specifications.. All applications described in this Catalog exemplify the use of Fuji's products for your reference only. No right or license, either express or implied, under any patent, copyright, trade secret or other intellectual property right owned by Fuji Electric Co., Ltd. is (or shall be deemed) granted. Fuji Electric Co., Ltd. makes no representation or warranty, whether express or implied, relating to the infringement or alleged infringement of other's intellectual property rights which may arise from the use of the applications described herein. 3. Although Fuji Electric Co., Ltd. is enhancing product quality and reliability, a small percentage of semiconductor products may become faulty. When using Fuji Electric semiconductor products in your equipment, you are requested to take adequate safety measures to prevent the equipment from causing a physical injury, fire, or other problem if any of the products become faulty. It is recommended to make your design failsafe, flame retardant, and free of malfunction. 4. The products introduced in this Catalog are intended for use in the following electronic and electrical equipment which has normal reliability requirements. Computers OA equipment Communications equipment (terminal devices) Measurement equipment Machine tools Audiovisual equipment Electrical home appliances Personal equipment Industrial robots etc. 5. If you need to use a product in this Catalog for equipment requiring higher reliability than normal, such as for the equipment listed below, it is imperative to contact Fuji Electric Co., Ltd. to obtain prior approval. When using these products for such equipment, take adequate measures such as a backup system to prevent the equipment from malfunctioning even if a Fuji's product incorporated in the equipment becomes faulty. Transportation equipment (mounted on cars and ships) Trunk communications equipment Trafficsignal control equipment Gas leakage detectors with an autoshutoff feature Emergency equipment for responding to disasters and antiburglary devices Safety devices Medical equipment. Do not use products in this Catalog for the equipment requiring strict reliability such as the following and equivalents to strategic equipment (without limitation). Space equipment Aeronautic equipment Nuclear control equipment Submarine repeater equipment 7. Copyright (c)994 by Fuji Electric Co., Ltd. All rights reserved. No part of this Catalog may be reproduced in any form or by any means without the express permission of Fuji Electric Co., Ltd. 8. If you have any question about any portion in this Catalog, ask Fuji Electric Co., Ltd. or its sales agents before using the product. Neither Fuji Electric Co., Ltd. nor its agents shall be liable for any injury caused by any use of the products not in accordance with instructions set forth herein. 9 4/

6MBP75VFN IGBT Module (V series) 600V / 75A / IPM. IGBT Modules

6MBP75VFN IGBT Module (V series) 600V / 75A / IPM. IGBT Modules MBP75FN5 IGBT Module ( series) / 75A / IPM Features Temperature protection provided by directly detecting the junction temperature of the IGBTs Low power loss and soft switching High performance and high

More information

7MBP50VFN IGBT Module (V series) 600V / 50A / IPM. IGBT Modules

7MBP50VFN IGBT Module (V series) 600V / 50A / IPM. IGBT Modules 7MBP5VFN65 IGBT Module (V series) 6V / 5A / IPM Features Temperature protection provided by directly detecting the junction temperature of the IGBTs Low power loss and soft switching High performance and

More information

7MBP50VFN IGBT Module (V series) 1200V / 50A / IPM. IGBT Modules

7MBP50VFN IGBT Module (V series) 1200V / 50A / IPM. IGBT Modules 7MBP5VFN5 IGBT Module (V series) V / 5A / IPM Features Temperature protection provided by directly detecting the junction temperature of the IGBTs Low power loss and soft switching High performance and

More information

6MBP50VDA IGBT MODULE (V series) 1200V / 50A / IPM. Features

6MBP50VDA IGBT MODULE (V series) 1200V / 50A / IPM.   Features IGBT MODULE (V series) V / A / IPM Features Temperature protection provided by directly detecting the junction temperature of the IGBTs Low power loss and soft switching High performance and high reliability

More information

7MBP75VDN IGBT MODULE (V series) 1200V / 75A / IPM. Features

7MBP75VDN IGBT MODULE (V series) 1200V / 75A / IPM.   Features IGBT MODULE (V series) V / A / IPM Features Temperature protection provided by directly detecting the junction temperature of the IGBTs Low power loss and soft switching High performance and high reliability

More information

6MBP20VAA IGBT MODULE (V series) 600V / 20A / IPM. Features

6MBP20VAA IGBT MODULE (V series) 600V / 20A / IPM.   Features 6MBPVAA6-5 IGBT MODULE (V series) 6V / A / IPM Features Temperature protection provided by directly detecting the junction temperature of the IGBTs Low power loss and soft switching Compatible with existing

More information

6MBP150RA060. IGBT-IPM R series. 600V / 150A 6 in one-package. Features. Maximum ratings and characteristics

6MBP150RA060. IGBT-IPM R series. 600V / 150A 6 in one-package. Features. Maximum ratings and characteristics 6MBP15RA6 IGBTIPM R series 6 / 15A 6 in onepackage Features Temperature protection provided by directly detecting the junction temperature of the IGBTs Low power loss and soft switching High performance

More information

Symbol Rating Unit V V V V A A A W Vcc Vcc AC *9

Symbol Rating Unit V V V V A A A W Vcc Vcc AC *9 6MBP5RTB6 IPMR3 series 6 / 5A 6 in onepackage Features Temperature protection provided by directly detecting the junction temperature of the IGBTs Low power loss and soft switching High performance and

More information

Collector-Emitter voltage VCES 1200 V Gate-Emitter voltage VGES ±20 V Ic Continuous Tc=80 C 450

Collector-Emitter voltage VCES 1200 V Gate-Emitter voltage VGES ±20 V Ic Continuous Tc=80 C 450 IGBT MODULE (V series) V / 45A / 6 in one package Features Compact Package P.C.Board Mount Low VCE (sat) Applications Inverter for Motor Drive AC and DC Servo Drive Amplifier Uninterruptible Power Supply

More information

Collector-Emitter voltage VCES 1200 V Gate-Emitter voltage VGES ±20 V Ic Continuous Tc=100 C 100

Collector-Emitter voltage VCES 1200 V Gate-Emitter voltage VGES ±20 V Ic Continuous Tc=100 C 100 6MBIVB125 IGBT MODULE (V series) 12V / A / 6 in one package Features Compact Package P.C.Board Mount Low VCE (sat) Applications Inverter for Motor Drive AC and DC Servo Drive Amplifier Uninterruptible

More information

Items Symbols Conditions Maximum ratings Units Collector-Emitter voltage VCES 1200 V Gate-Emitter voltage VGES ±20 V. Continuous

Items Symbols Conditions Maximum ratings Units Collector-Emitter voltage VCES 1200 V Gate-Emitter voltage VGES ±20 V. Continuous 1MBI2U4H-12L-5 IGBT MODULE (U series) 12V / 2A / 1 in one package Features High speed switching Voltage drive Low Inductance module structure Applications Inverter DB for Motor Drive AC and DC Servo Drive

More information

Viso AC : 1min VAC

Viso AC : 1min VAC MBIVA5 IGBT MODULE (V series) V / A / in one package Features Compact Package P.C.Board Mount Low VCE (sat) Applications Inverter for Motor Drive AC and DC Servo Drive Amplifier Uninterruptible Power Supply

More information

4MBI400VF-120R-50. IGBT Power Module (V series) 1200V/400A/IGBT, ±600V/450A/RB-IGBT, 4-in-1 package. IGBT Modules. (Unit : mm)

4MBI400VF-120R-50. IGBT Power Module (V series) 1200V/400A/IGBT, ±600V/450A/RB-IGBT, 4-in-1 package. IGBT Modules. (Unit : mm) 4MBI4F12R5 IGBT Power Module ( series) 12/4A/IGBT, ±6/45A/RBIGBT, 4in1 package Features Higher efficiency Optimized Advanced Ttype circuit Low inductance module structure Applications Inverter for motor

More information

Tc=25 C 1800 Tc=100 C 1400 Collector current

Tc=25 C 1800 Tc=100 C 1400 Collector current 2MBI4VXB-2P-5 IGBT MODULE (V series) 2V / 4A / 2 in one package Inverter Inverter Thermistor Features High speed switching Voltage drive Low Inductance module structure Applications Inverter for Motor

More information

C Storage temperature Tstg -40 ~ +125 Isolation voltage between terminal and copper base (*1) Viso AC : 1min VAC Screw torque

C Storage temperature Tstg -40 ~ +125 Isolation voltage between terminal and copper base (*1) Viso AC : 1min VAC Screw torque 2MBI6VD-6-5 IGBT MODULE (V series) 6V / 6A / 2 in one package Inverter Inverter Features High speed switching Voltage drive Low Inductance module structure Applications Inverter for Motor Drive AC and

More information

C Storage temperature Tstg -40 ~ 125 Isolation voltage between terminal and copper base (*1) Viso AC : 1min VAC Screw torque

C Storage temperature Tstg -40 ~ 125 Isolation voltage between terminal and copper base (*1) Viso AC : 1min VAC Screw torque 2MBI75VA-12-5 IGBT MODULE (V series) 12V / 75A / 2 in one package Features High speed switching Voltage drive Low Inductance module structure Applications Inverter for Motor Drive AC and DC Servo Drive

More information

Tc=100 C 300 Tc=25 C 360 Collector current

Tc=100 C 300 Tc=25 C 360 Collector current 2MBI3VH-12-5 IGBT MODULE (V series) 12V / 3A / 2 in one package Inverter Inverter Features High speed switching Voltage drive Low Inductance module structure Applications Inverter for Motor Drive AC and

More information

Tc=25 C 1800 Tc=100 C 1400 Collector current

Tc=25 C 1800 Tc=100 C 1400 Collector current 2MBI14VXB-17E-5 IGBT MODULE (V series) 17V / 14A / 2 in one package Inverter Inverter Thermistor 1 Features High speed switching Voltage drive Low Inductance module structure Applications Inverter for

More information

4MBI450VB-120R1-50. IGBT Power Module (V series) 1200V/450A/IGBT, ±900V/450A/RB-IGBT, 4-in-1 package. IGBT Modules. [Thermistor] [Inverter] 15

4MBI450VB-120R1-50. IGBT Power Module (V series) 1200V/450A/IGBT, ±900V/450A/RB-IGBT, 4-in-1 package. IGBT Modules. [Thermistor] [Inverter] 15 IGBT Power Module ( series) 12/45A/IGBT, ±/45A/RBIGBT, 4in1 package Features Higher efficiency Optimized Advanced Ttype circuit ReveseBlocking IGBT as for AC Switch Low inductance module structure Applications

More information

Collector-Emitter voltage VCES 1200 V Gate-Emitter voltage VGES ±20 V Ic Continuous Tc=100 C 50

Collector-Emitter voltage VCES 1200 V Gate-Emitter voltage VGES ±20 V Ic Continuous Tc=100 C 50 IGBT MODULE (V series) 12V / A / PIM Features Low VCE(sat) Compact Package P.C.Board Mount Module Converter Diode Bridge Dynamic Brake Circuit RoHS compliant product Applications Inverter for Motor Drive

More information

4MBI900VB-120R1-50. IGBT Power Module (V series) 1200V/900A/IGBT, ±900V/900A/RB-IGBT, 4-in-1 package. IGBT Modules. [Thermistor] [Inverter] 15

4MBI900VB-120R1-50. IGBT Power Module (V series) 1200V/900A/IGBT, ±900V/900A/RB-IGBT, 4-in-1 package. IGBT Modules. [Thermistor] [Inverter] 15 4MBI9B12R15 IGBT Power Module ( series) 12/9A/IGBT, ±9/9A/RBIGBT, 4in1 package Features Higher efficiency Optimized Advanced Ttype circuit ReveseBlocking IGBT as for AC Switch Low inductance module structure

More information

Collector-Emitter voltage VCES 600 V Gate-Emitter voltage VGES ±20 V Ic Continuous Tc=80 C 100

Collector-Emitter voltage VCES 600 V Gate-Emitter voltage VGES ±20 V Ic Continuous Tc=80 C 100 7MBRVP65 IGBT MODULE (V series) 6V / A / PIM Features Low VCE(sat) Compact Package P.C.Board Mount Module Converter Diode Bridge Dynamic Brake Circuit RoHS compliant product Applications Inverter for Motor

More information

Ic Continuous Tc=80 C 35 Icp 1ms Tc=80 C 70 -Ic 35 -Ic pulse 1ms 70 Collector power dissipation Pc 1 device 210 W

Ic Continuous Tc=80 C 35 Icp 1ms Tc=80 C 70 -Ic 35 -Ic pulse 1ms 70 Collector power dissipation Pc 1 device 210 W 7MBR35VP15 IGBT MODULE (V series) 1V / 5A / PIM Features Low VCE(sat) Compact Package P.C.Board Mount Module Converter Diode Bridge Dynamic Brake Circuit RoHS compliant product Applications Inverter for

More information

Icp 1ms TC=80 C 70 -Ic 35. IC Continuous TC=80 C 35 ICP 1ms TC=80 C 70

Icp 1ms TC=80 C 70 -Ic 35. IC Continuous TC=80 C 35 ICP 1ms TC=80 C 70 IGBT MODULE (V series) V / 35A / PIM Features Low VCE(sat) Compact Package P.C.Board Mount Module Converter Diode Bridge Dynamic Brake Circuit RoHS compliant product Applications Inverter for Motor Drive

More information

Icp 1ms TC=80 C 70 -Ic 35. IC Continuous TC=80 C 35 ICP 1ms TC=80 C 70

Icp 1ms TC=80 C 70 -Ic 35. IC Continuous TC=80 C 35 ICP 1ms TC=80 C 70 7MBR35VKB125 IGBT MODULE (V series) 12V / 35A / PIM Features Low VCE(sat) Compact Package P.C.Board Mount Module Converter Diode Bridge Dynamic Brake Circuit RoHS compliant product Applications Inverter

More information

4MBI650VB-120R1-50. IGBT Power Module (V series) 1200V/650A/IGBT, ±900V/650A/RB-IGBT, 4-in-1 package. IGBT Modules. [Thermistor] 8.

4MBI650VB-120R1-50. IGBT Power Module (V series) 1200V/650A/IGBT, ±900V/650A/RB-IGBT, 4-in-1 package. IGBT Modules. [Thermistor] 8. 4MBI65B12R15 IGBT Power Module ( series) 12/65A/IGBT, ±9/65A/RBIGBT, 4in1 package Features Higher efficiency Optimized Advanced Ttype circuit ReveseBlocking IGBT as for AC Switch Low inductance module

More information

Icp 1ms TC=80 C 60 -Ic 30. IC Continuous TC=80 C 30 ICP 1ms TC=80 C 60. Inverter, Brake 175 Converter 150 Operating junciton temperature

Icp 1ms TC=80 C 60 -Ic 30. IC Continuous TC=80 C 30 ICP 1ms TC=80 C 60. Inverter, Brake 175 Converter 150 Operating junciton temperature 7MBR3VKA65 IGBT MODULE (V series) 6V / 3A / PIM Features Low VCE(sat) Compact Package P.C.Board Mount Module Converter Diode Bridge Dynamic Brake Circuit RoHS compliant product Applications Inverter for

More information

Icp 1ms TC=80 C 20 -Ic 10. IC Continuous TC=80 C 10 ICP 1ms TC=80 C 20

Icp 1ms TC=80 C 20 -Ic 10. IC Continuous TC=80 C 10 ICP 1ms TC=80 C 20 7MBRVKC IGBT MODULE (V series) V / A / PIM Features Low VCE(sat) Compact Package P.C.Board Mount Module Converter Diode Bridge Dynamic Brake Circuit RoHS compliant product Applications Inverter for Motor

More information

IGBT MODULE (V series) 1200V / 75A / IGBT, RB-IGBT 12 in one package

IGBT MODULE (V series) 1200V / 75A / IGBT, RB-IGBT 12 in one package MBIVN-- IGBT MODULE (V series) V / A / IGBT, RB-IGBT in one package Features Higher Efficiency Optimized A (T-type) -3 level circuit Low inductance module structure Featuring Reverse Blocking IGBT (RB-IGBT)

More information

Items Symbols Conditions Maximum ratings Units Collector-Emitter voltage VCES 1200 V Gate-Emitter voltage VGES ±20 V. Icp 1ms TC=100 C 7200

Items Symbols Conditions Maximum ratings Units Collector-Emitter voltage VCES 1200 V Gate-Emitter voltage VGES ±20 V. Icp 1ms TC=100 C 7200 1MBI36VD-12P IGBT MODULE (V series) 36V / 12A / 1 in one package Features High speed switching Voltage drive Low Inductance module structure Applications Inverter for Motor Drive AC and DC Servo Drive

More information

Chapter 2. Technical Terms and Characteristics

Chapter 2. Technical Terms and Characteristics Chapter 2 Technical Terms and Characteristics CONTENTS Page 1 IGBT terms 2-2 2 IGBT characteristics 2-5 This section explains relevant technical terms and characteristics of IGBT modules. 2-1 1 IGBT terms

More information

IGBT MODULE (V series) 1200V / 100A / IGBT, RB-IGBT 4 in one package

IGBT MODULE (V series) 1200V / 100A / IGBT, RB-IGBT 4 in one package MBIVN--5 IGBT MODULE (V series) V / A / IGBT, RB-IGBT in one package Features Higher Efficiency Optimized A (T-type) -3 level circuit Low inductance module structure Featuring Reverse Blocking IGBT (RB-IGBT)

More information

Continuous. Ic pulse 1ms 900. C Case temperature TC 125 Storage temperature Tstg -40 to N m Terminals (*4) - 4.5

Continuous. Ic pulse 1ms 900. C Case temperature TC 125 Storage temperature Tstg -40 to N m Terminals (*4) - 4.5 6MBI45V25 IGBT MODULE (V series) 2V / 45A / 6 in one package Features Compact Package P.C.Board Mount Low VCE (sat) RoHS Compliant product Applications Inverter for Motor Drive AC and DC Servo Drive Amplifier

More information

Icp 1ms TC=80 C 100 -IC 50. IC Continuous TC=80 C 35 ICP 1ms TC=80 C 70. Inverter, Brake 175 Converter 150 Operating junciton temperature

Icp 1ms TC=80 C 100 -IC 50. IC Continuous TC=80 C 35 ICP 1ms TC=80 C 70. Inverter, Brake 175 Converter 150 Operating junciton temperature 7MBR5VB1 IGBT MODULE (V series) 12V / 5A / PIM Features Low VCE(sat) Compact Package P.C.Board Mount Module Converter Diode Bridge Dynamic Brake Circuit RoHS compliant product Applications Inverter for

More information

Items Symbols Conditions Maximum ratings Units Collector-Emitter voltage VCES 1200 V Gate-Emitter voltage VGES ±20 V. Icp 1ms 2400

Items Symbols Conditions Maximum ratings Units Collector-Emitter voltage VCES 1200 V Gate-Emitter voltage VGES ±20 V. Icp 1ms 2400 1MBI12VC-12P IGBT MODULE (V series) 12V / 12A / 1 in one package Features High speed switching Voltage drive Low Inductance module structure Applications Inverter for Motor Drive AC and DC Servo Drive

More information

Items Symbols Conditions Maximum ratings Units Collector-Emitter voltage VCES 1200 V Gate-Emitter voltage VGES ±20 V

Items Symbols Conditions Maximum ratings Units Collector-Emitter voltage VCES 1200 V Gate-Emitter voltage VGES ±20 V IGBT MODULE (V series) V / 9A / 1 in one package Features High speed switching Voltage drive Low Inductance module sucture Applications Inverter for Motor Drive AC and DC Servo Drive Amplifier Uninterruptible

More information

Items Symbols Conditions Maximum ratings Units Collector-Emitter voltage VCES 1700 V Gate-Emitter voltage VGES ±20 V

Items Symbols Conditions Maximum ratings Units Collector-Emitter voltage VCES 1700 V Gate-Emitter voltage VGES ±20 V 1MBI16VR-17E IGBT MODULE (V series) 17V / 16A / 1 in one package Features High speed switching Voltage drive Low Inductance module structure Applications Inverter for Motor Drive AC and DC Servo Drive

More information

2MBI150HJ Power Module (V series) 1200V / 150A / 2-in-1 package G1 E1 C2E1. IGBT Modules

2MBI150HJ Power Module (V series) 1200V / 150A / 2-in-1 package G1 E1 C2E1. IGBT Modules Power Module (V series) 1V / 15A / 2-in-1 package Features High speed switching Voltage drive Low Inductance module structure Applications Soft-switching Application Industrial machines,such as Welding

More information

Icp 1ms TC=80 C 200 -IC 100. IC Continuous TC=80 C 50 ICP 1ms TC=80 C 100. Inverter, Brake 175 Converter 150 Operating junciton temperature

Icp 1ms TC=80 C 200 -IC 100. IC Continuous TC=80 C 50 ICP 1ms TC=80 C 100. Inverter, Brake 175 Converter 150 Operating junciton temperature 7MBR1VB65 IGBT MODULE (V series) 6V / 1A / PIM Features Low VCE(sat) Compact Package P.C.Board Mount Module Converter Diode Bridge Dynamic Brake Circuit RoHS compliant product Applications Inverter for

More information

Icp 1ms TC=80 C 50 -IC 25. IC Continuous TC=80 C 25 ICP 1ms TC=80 C 50. Inverter, Brake 175 Converter 150 Operating junciton temperature

Icp 1ms TC=80 C 50 -IC 25. IC Continuous TC=80 C 25 ICP 1ms TC=80 C 50. Inverter, Brake 175 Converter 150 Operating junciton temperature 7MBR5VA5 IGBT MODULE (V series) V / 5A / PIM Features Low VCE(sat) Compact Package P.C.Board Mount Module Converter Diode Bridge Dynamic Brake Circuit RoHS compliant product Applications Inverter for Motor

More information

Items Symbols Conditions Maximum ratings Units Collector-Emitter voltage VCES 1700 V Gate-Emitter voltage VGES ±20 V

Items Symbols Conditions Maximum ratings Units Collector-Emitter voltage VCES 1700 V Gate-Emitter voltage VGES ±20 V 1MBI16VC-17E IGBT MODULE (V series) 17V / 16A / 1 in one package Features High speed switching Voltage drive Low Inductance module structure Applications Inverter for Motor Drive AC and DC Servo Drive

More information

IGBT MODULE (V series) 1200V / 300A / IGBT, 600V/300A/RB-IGBT, 4 in one package

IGBT MODULE (V series) 1200V / 300A / IGBT, 600V/300A/RB-IGBT, 4 in one package MBI3VG-R-5 IGBT MODULE (V series) V / 3A / IGBT, V/3A/RB-IGBT, in one package Features Higher Efficiency Optimized A (T-type) -3 level circuit Low inductance module sucture Featuring Reverse Blocking IGBT

More information

VCC 320V, VGE=15V Tj 150 C. Emitter IGBT Max. Power Dissipation PD_IGBT 360 W

VCC 320V, VGE=15V Tj 150 C. Emitter IGBT Max. Power Dissipation PD_IGBT 360 W FGW5NVD (High-Speed V series) V / 5A Features Low power loss Low switching surge and noise High reliability, high ruggedness (RBSOA, SCSOA etc.) Applications Inverter for Motor drive AC and DC Servo drive

More information

TC=25 C, Tj=150 C Note *1

TC=25 C, Tj=150 C Note *1 FGW75N6HD (High-Speed V series) 6V / 75A Features Low power loss Low switching surge and noise High reliability, high ruggedness (RBSOA, SCSOA etc.) Applications Uninterruptible power supply Power coditionner

More information

VCC 600V,VGE=12V Tj 150 C. Emitter IGBT Max. Power Dissipation PD_IGBT 340 W

VCC 600V,VGE=12V Tj 150 C. Emitter IGBT Max. Power Dissipation PD_IGBT 340 W FGWNHD (High-Speed V series) V / A Features Low power loss Low switching surge and noise High reliability, high ruggedness (RBSOA, SCSOA etc.) Applications Uninterruptible power supply Power coditionner

More information

Item Symbols Conditions Ratings Units Repetitive peak reverse voltage VRRM - 80 V Isolating voltage Viso Terminals-to-case, AC.

Item Symbols Conditions Ratings Units Repetitive peak reverse voltage VRRM - 80 V Isolating voltage Viso Terminals-to-case, AC. YG865C08R Schottky Barrier Diode Maximum Rating and Characteristics Maximum ratings (at Ta=25 C unless otherwise specified.) Item Symbols Conditions Ratings Units Repetitive peak reverse voltage VRRM -

More information

Description of Terminal Symbols and Terminology

Description of Terminal Symbols and Terminology Quality is our message Chapter 2 Description of Terminal Symbols and Terminology Contents Page 1. Description of Terminal Symbols...2-2 2. Description of Terminology...2-3 2 1 1 Description of Terminal

More information

Fuji IGBT Module V Series 1700V Family Technical Notes

Fuji IGBT Module V Series 1700V Family Technical Notes Fuji IGBT Module V Series 700V Family Technical Notes RBSOA, SCSOA MT5F24382 2 High current output characteristics MT5F24040 3 4 Switching energy and Reverse recovery dv/dt with combination of Rg and Cge

More information

TO-220F(SLS) Description Symbol Characteristics Unit Remarks

TO-220F(SLS) Description Symbol Characteristics Unit Remarks Super FAP-E 3S series N-CHANNEL SILICON POWER MOSFET Features Maintains both low power loss and low noise Lower RDS(on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing

More information

TO-3P(Q) Description Symbol Characteristics Unit Remarks. Ta=25 C W 315 Tc=25 C Operating and Storage Tch 150 C Temperature range Tstg -55 to C

TO-3P(Q) Description Symbol Characteristics Unit Remarks. Ta=25 C W 315 Tc=25 C Operating and Storage Tch 150 C Temperature range Tstg -55 to C Super FAP-E 3 series N-CHANNEL SILICON POWER MOSFET Features Maintains both low power loss and low noise Lower RDS(on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing

More information

TO-3P(Q) Description Symbol Characteristics Unit Remarks. Tch 150 C Tstg -55 to C

TO-3P(Q) Description Symbol Characteristics Unit Remarks. Tch 150 C Tstg -55 to C FMH9N9E Super FAP-E 3 series N-CHANNEL SILICON POWER MOSFET Features Maintains both low power loss and low noise Lower RDS(on) characteristic More controllable switching dv/dt by gate resistance Smaller

More information

FUJI IGBT Module EP2 Package Evaluation Board

FUJI IGBT Module EP2 Package Evaluation Board FUJI IGBT Module EP2 Package Evaluation Board December, 2017 Device Application Technology Dept. Sales Div., Electronic Devices Business Gr. Fuji Electric Co., Ltd. MT6M13583 Rev. a Fuji Electric Co.,

More information

FUJI IGBT Module EP3 Package Evaluation Board

FUJI IGBT Module EP3 Package Evaluation Board FUJI IGBT Module EP3 Package Evaluation Board December, 2017 Device Application Technology Dept. Sales Div., Electronic Devices Business Gr. Fuji Electric Co., Ltd. MT5F34605 Rev. a Fuji Electric Co.,

More information

TO-3P. φ3.2± max 10 ± 0.2 3± ± ±0.2

TO-3P. φ3.2± max 10 ± 0.2 3± ± ±0.2 FMH3N6S Super J-MOS series N-Channel enhancement mode power MOSFET Features Low on-state resistance Low switching loss easy to use (more controllabe switching dv/dt by Rg) Applications UPS Server Telecom

More information

TO-247-P2. Description Symbol Characteristics Unit Remarks VDS 600 V VDSX 600 V VGS=-30V. Description Symbol Conditions min. typ. max.

TO-247-P2. Description Symbol Characteristics Unit Remarks VDS 600 V VDSX 600 V VGS=-30V. Description Symbol Conditions min. typ. max. FMW47N6SHF Super J-MOS series N-Channel enhancement mode power MOSFET Features Low on-state resistance Low switching loss easy to use (more controllabe switching dv/dt by Rg) Applications UPS Server Telecom

More information

TO-247. Parameter Symbol Characteristics Unit Remarks VDS 600 V VDSX 600 V VGS=-30V

TO-247. Parameter Symbol Characteristics Unit Remarks VDS 600 V VDSX 600 V VGS=-30V FMW47N6SFDHF Super J-MOS series N-Channel enhancement mode power MOSFET Features Pb-free lead terminal RoHS compliant uses Halogen-free molding compound Applications For switching Outline Drawings [mm]

More information

Chapter 8. Parallel Connections

Chapter 8. Parallel Connections Chapter 8 Parallel Connections CONTENTS Page 1 Current imbalance at steady state 8-2 2 Current imbalance at switching 8-6 3 Gate drive circuit 8-7 4 Wiring example for parallel connections 8-7 This chapter

More information

Item Symbol Condition Rat ing Unit Collector-Emitter voltage Gate-Emitter voltage. Continuous. A Collector current

Item Symbol Condition Rat ing Unit Collector-Emitter voltage Gate-Emitter voltage. Continuous. A Collector current 7MBRS6 IGBT Modules IGBT MODULE (S series) 6 / / PIM Features Low CE(sat) Compact package P.C. board mount Converter diode bridge, Dynamic brake circuit pplications Inverter for motor drive C and DC servo

More information

TO-247. Parameter Symbol Characteristics Unit Remarks VDS 600 V VDSX 600 V VGS=-30V

TO-247. Parameter Symbol Characteristics Unit Remarks VDS 600 V VDSX 600 V VGS=-30V FMW3N6SHF Super J-MOS series N-Channel enhancement mode power MOSFET Features Pb-free lead terminal RoHS compliant uses Halogen-free molding compound Applications For switching Outline Drawings [mm] TO-247

More information

Item Symbol Condition Rating Unit Collector-Emitter voltage Gate-Emitter voltage. A Collector current. Tc=80 C IC. Tc=80 C.

Item Symbol Condition Rating Unit Collector-Emitter voltage Gate-Emitter voltage. A Collector current. Tc=80 C IC. Tc=80 C. 7MBRU12 IGBT Modules IGBT MODULE (U series) 12 / / PIM Features Low CE(sat) Compact Package P.C. Board Mount Module Converter Diode Bridge Dynamic Brake Circuit pplications Inverter for Motoe Drive C and

More information

Fuji IGBT Module V Series 1200V Family Technical Notes

Fuji IGBT Module V Series 1200V Family Technical Notes Fuji IGBT Module V Series 200V Family Technical Notes RBSOA, SCSOA MT5F24325 2 High current output characteristics MT5F24326 3 4 Switching energy and Reverse recovery dv/dt with combination of Rg and Cge

More information

TO-220F (SLS) Parameter Symbol Characteristics Unit Remarks VDS 600 V VDSX 600 V VGS=-30V

TO-220F (SLS) Parameter Symbol Characteristics Unit Remarks VDS 600 V VDSX 600 V VGS=-30V FMV4N6S Super J-MOS series N-Channel enhancement mode power MOSFET Features Pb-free lead terminal RoHS compliant Applications For switching Outline Drawings [mm] TO-22F (SLS) Equivalent circuit schematic

More information

TO-3P(Q) φ3.2± max 10 ± 0.2 3± ± ±0.2

TO-3P(Q) φ3.2± max 10 ± 0.2 3± ± ±0.2 FMHN6S Super J-MOS series N-Channel enhancement mode power MOSFET Features Pb-free lead terminal RoHS compliant Applications For switching Outline Drawings [mm] TO-3P(Q) 5.5max 3 ±. ±. φ3.±..5 5±. 3±..6

More information

Item Symbol Condition Rating Unit Collector-Emitter voltage Gate-Emitter voltage. A Collector current A. Continuous Tc=25 C 35. Tc=80 C 30.

Item Symbol Condition Rating Unit Collector-Emitter voltage Gate-Emitter voltage. A Collector current A. Continuous Tc=25 C 35. Tc=80 C 30. 7MBR2S12 IGBT Modules IGBT MODULE (S series) 12 / 2 / PIM Features Low CE(sat) Compact package P.C. board mount Converter diode bridge, Dynamic brake circuit pplications Inverter for motor drive C and

More information

Sixth-Generation V-Series IGBT Module Application Note Chapter 1 Basic Concept and Features

Sixth-Generation V-Series IGBT Module Application Note Chapter 1 Basic Concept and Features Sixth-Generation V-Series IGBT Module Application Note Chapter 1 Basic Concept and Features Table of contents Page 1 Basic concept of V series 1-2 2 Transition of device structure 1-3 3 Characteristics

More information

Item Symbol Condition Rat ing Unit Collector-Emitter voltage Gate-Emitter voltage. Continuous. A Collector current

Item Symbol Condition Rat ing Unit Collector-Emitter voltage Gate-Emitter voltage. Continuous. A Collector current 7MBR3S6 IGBT Modules IGBT MODULE (S series) 6 / 3 / PIM Features Low CE(sat) Compact package P.C. board mount Converter diode bridge, Dynamic brake circuit pplications Inverter for motor drive C and DC

More information

Item Symbol Condition Rating Unit Collector-Emitter voltage Gate-Emitter voltage. A Collector current. Tc=80 C 35. 1ms IC -IC pulse.

Item Symbol Condition Rating Unit Collector-Emitter voltage Gate-Emitter voltage. A Collector current. Tc=80 C 35. 1ms IC -IC pulse. 7MBR5U12 IGBT Modules IGBT MODULE (U series) 12 / 5 / PIM Features Low CE(sat) Compact Package P.C. Board Mount Module Converter Diode Bridge Dynamic Brake Circuit pplications Inverter for Motoe Drive

More information

Drain (D) easy to use (more controllable switching dv/dt by Rg) The reliability trial conforms to AEC Q % avalanche tested Gate (G)

Drain (D) easy to use (more controllable switching dv/dt by Rg) The reliability trial conforms to AEC Q % avalanche tested Gate (G) Super FAP-E 3S Low Qg Built-in FRED series N-Channel enhancement mode power MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Low on-state resistance Low switching loss Drain (D) easy

More information

Item Symbol Condition Rat ing Unit Collector-Emitter voltage Gate-Emitter voltage. Continuous Tc=25 C 75. A Collector current.

Item Symbol Condition Rat ing Unit Collector-Emitter voltage Gate-Emitter voltage. Continuous Tc=25 C 75. A Collector current. 7MBR5SB12 IGBT Modules IGBT MODULE (S series) 12 / 5 / PIM Features Low CE(sat) Compact package P.C. board mount Converter diode bridge, Dynamic brake circuit pplications Inverter for motor drive C and

More information

TO ± ± ± ± 0.2. Description Symbol Characteristics Unit Remarks VDS 600 V VDSX 600 V VGS=-30V

TO ± ± ± ± 0.2. Description Symbol Characteristics Unit Remarks VDS 600 V VDSX 600 V VGS=-30V FMPNS Super J-MOS series N-Channel enhancement mode power MOSFET Features Low on-state resistance Low switching loss easy to use (more controllabe switching dv/dt by Rg) Applications UPS Server Telecom

More information

Item Symbol Condition Rating Unit Collector-Emitter voltage Gate-Emitter voltage. A Collector current A. Continuous Tc=25 C 35. Tc=75 C 30.

Item Symbol Condition Rating Unit Collector-Emitter voltage Gate-Emitter voltage. A Collector current A. Continuous Tc=25 C 35. Tc=75 C 30. 7MBRS14 IGBT Modules IGBT MODULE (S series) 14 / / PIM Features Low CE(sat) Compact Package P.C. Board Mount Module Converter Diode Bridge Dynamic Brake Circuit pplications Inverter for Motoe Drive C and

More information

Rating 600 ± to to Unit V V A A A W W C C N m. Symbol Characteristics Conditions Unit Min. Typ. Max.

Rating 600 ± to to Unit V V A A A W W C C N m. Symbol Characteristics Conditions Unit Min. Typ. Max. 600 / 50 Molded Package Features Small molded package Low power loss Soft switching with low switching surge and noise High reliability, high ruggedness (RBSO, SCSO etc.) Comprehensive line-up pplications

More information

MBN3600E17F Silicon N-channel IGBT 1700V F version

MBN3600E17F Silicon N-channel IGBT 1700V F version Silicon N-channel IGBT 17V F version Spec.No.IGBT-SP-124 R P1 FEATURES Soft switching behavior & low conduction loss: Soft low-injection punch-through with trench gate IGBT. Low driving power: Low input

More information

MBL1200E17F Silicon N-channel IGBT 1700V F version

MBL1200E17F Silicon N-channel IGBT 1700V F version Silicon N-channel IGBT 1700V F version Spec.No.IGBT-SP-15018 R2 P1 1.FEATURES Soft switching behavior & low conduction loss: Soft low-injection punch-through with trench gate IGBT. Low driving power: Low

More information

High Power Rugged Type IGBT Module

High Power Rugged Type IGBT Module ug. 29 High Power Rugged Type IGBT Module Description DWIN S IGBT 7DM3 Package devices are optimized to reduce losses and switching noise in high frequency power conditioning electrical systems. These

More information

GT50J325 GT50J325. High Power Switching Applications Fast Switching Applications. Maximum Ratings (Ta = 25 C) Thermal Characteristics

GT50J325 GT50J325. High Power Switching Applications Fast Switching Applications. Maximum Ratings (Ta = 25 C) Thermal Characteristics GT5J25 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT5J25 High Power Switching Applications Fast Switching Applications Unit: mm The th generation Enhancement-mode Fast switching (FS):

More information

Item Symbol Condition Rating Unit Collector-Emitter voltage Gate-Emitter voltage. Not recommend for new design. Continuous Tc=25 C

Item Symbol Condition Rating Unit Collector-Emitter voltage Gate-Emitter voltage. Not recommend for new design. Continuous Tc=25 C 7MBRSC IGBT Modules PIM/Built-in converter with thyristor and brake (S series) / / PIM Features Low CE(sat) Compact Package P.C. Board Mount Module Converter Diode Bridge Dynamic Brake Circuit pplications

More information

Item Symbol Condition Rating Unit Collector-Emitter voltage Gate-Emitter voltage. 1ms. 1 device. Continuous 1ms. 1 device

Item Symbol Condition Rating Unit Collector-Emitter voltage Gate-Emitter voltage. 1ms. 1 device. Continuous 1ms. 1 device 7MBR3SC6 IGBT Modules PIM/Built-in converter with thyristor and brake (S series) 6 / 3 / PIM Features Low CE(sat) Compact Package P.C. Board Mount Module Converter Diode Bridge Dynamic Brake Circuit pplications

More information

MBN1200F33F-C 3300V Silicon N-channel IGBT F version with SiC Diode

MBN1200F33F-C 3300V Silicon N-channel IGBT F version with SiC Diode MBNF33F-C 33V Silicon N-channel IGBT F version with SiC Diode Spec.No.IGBT-SP-5 R P FEATURES Soft switching & low conduction loss IGBT : Soft low-injection punch-through High conductivity IGBT with advanced

More information

6MBP75VDA IGBT MODULE (V series) 600V / 75A / IPM. Features

6MBP75VDA IGBT MODULE (V series) 600V / 75A / IPM.   Features MBPVDA-5 IGBT MODULE (V series) V / A / IPM Features Temperature protection provided by directly detecting the junction temperature of the IGBTs Low power loss and soft switching High performance and high

More information

Features. Applications. Characteristics Symbol Rating Unit. T C=25 o C I C. T C=80 o C 100 A. Operating Junction Temperature Tj -55~150

Features. Applications. Characteristics Symbol Rating Unit. T C=25 o C I C. T C=80 o C 100 A. Operating Junction Temperature Tj -55~150 General Description MagnaChip s IGBT Module 7DM-1 package devices are optimized to reduce losses and switching noise in high frequency power conditioning electrical systems. These IGBT Module series are

More information

MPMC100B120RH NPT & Rugged Type 1200V IGBT Module

MPMC100B120RH NPT & Rugged Type 1200V IGBT Module General Description MagnaChip s IGBT Module 7DM- package devices are optimized to reduce losses and switching noise in high frequency power conditioning electrical systems. These IGBT Module series are

More information

7MBP150VDA IGBT MODULE (V series) 600V / 150A / IPM. Features

7MBP150VDA IGBT MODULE (V series) 600V / 150A / IPM.   Features 7MBP5VDA6-5 IGBT MODULE (V series) 6V / 5A / IPM Features Temperature protection provided by directly detecting the junction temperature of the IGBTs Low power loss and soft switching High performance

More information

MG400V2YS60A MG400V2YS60A. High Power Switching Applications Motor Control Applications. Equivalent Circuit

MG400V2YS60A MG400V2YS60A. High Power Switching Applications Motor Control Applications. Equivalent Circuit MGV2YS6A TOSHIBA IGBT Module Silicon N Channel IGBT MGV2YS6A High Power Switching Applications Motor Control Applications Unit in mm The electrodes are isolated from case. Enhancement mode Thermal output

More information

6MBP35VBA IGBT MODULE (V series) 1200V / 35A / IPM. Features

6MBP35VBA IGBT MODULE (V series) 1200V / 35A / IPM.   Features MBP35VBA-5 IGBT MODULE (V series) V / 35A / IPM Features Temperature protection provided by directly detecting the junction temperature of the IGBTs Low power loss and soft switching Compatible with existing

More information

Item Symbol Unit MBL1600E17F Collector Emitter Voltage V CES V 1,700 Gate Emitter Voltage V GES V 20 Collector Current

Item Symbol Unit MBL1600E17F Collector Emitter Voltage V CES V 1,700 Gate Emitter Voltage V GES V 20 Collector Current IGBT MODULE Spec.No.IGBT-SP-57 R P MBL6E7F Silicon N-channel IGBT 7V F version FEATURES Soft switching behavior & low conduction loss: Soft low-injection punch-through with Advanced trench HiGT* (*High

More information

T C = 25 C 400 T C = 80 C 300 A

T C = 25 C 400 T C = 80 C 300 A APTGT3A17D3G Phase leg Trench + Field Stop IGBT3 Power Module CES = 17 I C = 3A @ Tc = 8 C 4 Q1 3 Application Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control

More information

MBN1500FH45F Silicon N-channel IGBT 4500V F version

MBN1500FH45F Silicon N-channel IGBT 4500V F version Silicon N-channel IGBT 4500V F version Spec.No.IGBT-SP-15014 R7 P1 FEATURES Soft switching behavior, low switching loss & low conduction loss : Soft low-injection punch-through Advanced Trench High conductivity

More information

TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J324

TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J324 GTJ2 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GTJ2 High Power Switching Applications Fast Switching Applications Unit: mm Fourth-generation IGBT Enhancement mode type Fast switching

More information

MBN1800F33F Silicon N-channel IGBT 3300V F version

MBN1800F33F Silicon N-channel IGBT 3300V F version Silicon N-channel IGBT V F version Spec.No.IGBT-SP-8 R8 P FEATURES Soft switching behavior, low switching loss & low conduction loss : Soft low-injection punch-through Advanced Trench High conductivity

More information

Item Symbol Unit MBN1800FH33F Collector Emitter Voltage VCES V 3,300 Gate Emitter Voltage VGES V 20 Collector Current

Item Symbol Unit MBN1800FH33F Collector Emitter Voltage VCES V 3,300 Gate Emitter Voltage VGES V 20 Collector Current Spec.No.IGBT-SP-162 R1 P1 Silicon N-channel IGBT 33V F version FEATURES Soft switching behavior, low switching loss & low conduction loss : Soft low-injection punch-through Advanced Trench High conductivity

More information

GT60M323 GT60M323. Voltage Resonance Inverter Switching Application Unit: mm. Maximum Ratings (Ta = 25 C) Thermal Characteristics. Equivalent Circuit

GT60M323 GT60M323. Voltage Resonance Inverter Switching Application Unit: mm. Maximum Ratings (Ta = 25 C) Thermal Characteristics. Equivalent Circuit GTM323 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GTM323 Voltage Resonance Inverter Switching Application Unit: mm Enhancement-mode High speed : tf =.9 µs (typ.) (IC = A) Low saturation

More information

CM200DY-24A. APPLICATION AC drive inverters & Servo controls, etc CM200DY-24A. IC...200A VCES V Insulated Type 2-elements in a pack

CM200DY-24A. APPLICATION AC drive inverters & Servo controls, etc CM200DY-24A. IC...200A VCES V Insulated Type 2-elements in a pack CMDY-A CMDY-A IC...A CES... Insulated Type -elements in a pack APPLICATION AC drive inverters & Servo controls, etc OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 9 8 CE E C E G GE 8 () -φ6. MOUNTING

More information

Molding Type Module IGBT, 2-in-1 Package, 1200 V and 300 A

Molding Type Module IGBT, 2-in-1 Package, 1200 V and 300 A Molding Type Module IGBT, 2-in-1 Package, 12 V and 3 A VS-GB3TH12N Double INT-A-PAK FEATURES 1 μs short circuit capability V CE(on) with positive temperature coefficient Maximum junction temperature 15

More information

RGCL60TK60 Data Sheet

RGCL60TK60 Data Sheet RGCL6TK6 6V 3A Field Stop Trench IGBT Outline V CES 6V TO-3PFM I C( C) 8A V CE(sat) (Typ.).4V@I C =3A P D 54W () (2) (3) Features ) Low Collector - Emitter Saturation Voltage 2) Soft Switching 3) Pb -

More information

MPMD100B120RH NPT & Rugged Type 1200V IGBT Module. Features. conditioning. Applications. total losses. Equivalent Circuit 7DM-3. Welding Machine, UPS

MPMD100B120RH NPT & Rugged Type 1200V IGBT Module. Features. conditioning. Applications. total losses. Equivalent Circuit 7DM-3. Welding Machine, UPS General Description MagnaChip s IGBT Module 7DM3 package devices are optimized to reduce losses and switching noise in high frequency power conditioning electrical systems. These IGBT Module series are

More information

Item Symbol Unit MBM1000FS17G Collector Emitter Voltage V CES V 1,700 Gate Emitter Voltage V GES V 20 Collector Current

Item Symbol Unit MBM1000FS17G Collector Emitter Voltage V CES V 1,700 Gate Emitter Voltage V GES V 20 Collector Current IGBT MODULE Silicon N-channel IGBT 17V G version Spec.No.IGBT-SP-163 R P 1 FEATURES High current density package Low stray inductance & low Rth(j-c) Half-bridge (2in1) Built in temperature sensor Scalable

More information

PM75CL1A120 FLAT-BASE TYPE INSULATED PACKAGE

PM75CL1A120 FLAT-BASE TYPE INSULATED PACKAGE PMCL1A1 PMCL1A1 FEATURE verter + Drive & Protection IC a) Adopting new th generation Full-Gate CSTBT TM chip b) The over-temperature protection which detects the chip surface temperature of CSTBT TM is

More information

RGW00TK65 650V 50A Field Stop Trench IGBT

RGW00TK65 650V 50A Field Stop Trench IGBT RGWTK65 65V 5A Field Stop Trench IGBT Outline V CES 65V TO-3PFM I C ( ) 26A V CE(sat) (Typ.).5V@I C =5A P D 89W ()(2)(3) Features ) Low Collector - Emitter Saturation Voltage 2) High Speed Switching 3)

More information

RGTVX6TS65 650V 80A Field Stop Trench IGBT

RGTVX6TS65 650V 80A Field Stop Trench IGBT 65V 8A Field Stop Trench IGBT Outline V CES 65V TO-247N I C( C) 8A V CE(sat) (Typ.).5V P D 44W ()(2)(3) Features ) Low Collector - Emitter Saturation Voltage 2) High Speed Switching & Low Switching Loss

More information