Package. Absolute maximum ratings (Ta=25 ) Characteristic Symbol Ratings Unit

Transcription

1 Oct.2 Features Built-in IGBT and diode bridge of partial switching PFC circuit Enable to reduce mounting area Low saturation voltage IGBT VCE(sat) =.7V max Low saturation voltage diode bridge VF =.V max The clip lead is adopted for inner lead. Low inductance, low resistance, high current capability The smoke generation and explosion are less likely to occur in case of desuction. Package SLA Equivalent circuit 3 (cut) Applications Partial switching PFC Absolute maximum ratings (Ta=25 ) Characteristic Symbol Ratings Unit Collector to Emitter Voltage VCES 6 V Gate to Emitter Voltage VGE ±3 V Continuous Collector Current IC(DC) 3 A Pulsed Collector Current IC (pulse) A Diode Peak Reverse Voltage VRM 6 V Diode Forward Current IF 25 A Diode Peak Surge Forward Current IFSM 2 2 A Diode I 2 t Limiting Value I 2 t 3 2 A 2 s Maximum Allowable Power Dissipation PT 4 5 (No.Fin Ta=25 C) 92 (Tc=25 C) W Thermal Resistance Isolation Voltage θj-a 4 25 (Junction-to-Ambient) C /W θj-c 4.36 ( Junction-to-Case ) C /W θj-c IGBT θj-c Di VISO 3.9 ( Junction-to-Case,IGBT Element Operation ) 8.33 ( Junction-to-Case,Di Element Operation ) 5 ( Between Fin and Lead Pin, minute AC) Operating Junction Temperature Tj 5 C Storage Temperature Tstg -4~5 C. PW μs, Duty % 2. PW ms, Half sinewave, shot 3. ms PW ms 4. All Element Operation C /W C /W Vrms Page

2 Oct.2 IGBT Elecical characteristics Characteristic Symbol Test Conditions (Ta=25 C) Limits min typ max unit Collector to Emitter Breakdown Voltage V(BR)CES IC= μa, VGE=V 6 V Gate to Emitter Leakage Current IGES VGE= ±3V ±5 na Collector to Emitter Leakage Current ICES VCE= 6V,VGE=V μa Gate Threshold Voltage VGE(th) VCE= V,ID=mA 3 6 V Collector to Emitter Saturation Voltage VCE(sat) VGE=5V,IC= 3A.3.7 V Collector to Emitter Saturation Voltage VCE(sat) VGE=5V,IC= 5A.6 V Input Capacitance Cies VCE=2V Output Capacitance Coes f=.mhz 5 VGE=V Reverse Transfer Capacitance Cres 8 25 pf Turn-On Delay Time td(on) 8 Rise Time Turn-Off Delay Time td(off) IC=5A VCE 3V VGE=±5V See fig. 9 2 Fall Time 32 ns Di Characteristic Symbol Test Conditions (Ta=25 C) Limits min typ max Forward Voltage Drop VF IF= 2.5A. Reverse Leakage Current IR VR=6V 5 Reverse Leakage Current Under High Temperature H IR VR=6V,Tj=5 C 2 Page 2

3 Oct.2 Elecical characteristics IC(A) IC - VCE (typical) 5VV VGE=2V 8V 7V 6V IC(A) IC - VCE (typical) Tc=25 5VV VGE=2V 8V 7V 6V VCE (V) VCE (V) VCE(sat)(V) 3 2 VCE(sat) - Tc (typical) VGE=5V IC=A 7A 5 3A A IC(A) IC - VGE (typical) VCE=5V Tc= Tc ( ) 5 5 VGE (V) Capa - VCE (typical) VCE,VGE - Qg (typical) Capacitance(pF) f=mhz VGE=V Cies Coes Cres VCE( V),VGE(V) 4 VCE 3 2 RL=6Ω VGE VCE(V) Qg (nc) Page 3

4 Oct.2 Elecical characteristics 5 VCE - VGE (typical) Tc=-4 SWTime - IC (typical) Tc=-4 4 VCE(V) 3 2 VGE (V) IC=A 5A A VCE=3V VGE =±5V IC (A) 5 VCE - VGE (typical) SWTime - IC (typical) VCE(V) VGE (V) IC=A 5A A VCE=3V GE =±5V IC (A) 5 4 VCE - VGE (typical) Tc=25 SWTime - IC (typical) Tc=25 VCE(V) 3 2 VGE (V) IC=A 5A A VCE=3V VGE =±5V IC (A) Page 4

5 Oct.2 Elecical characteristics SWTime - RG (typical) Tc=-4 IF - VF (typical) 8 IF(A) IC=5A =6Ω RL VGE=±5V RG (Ω) VF (V) SWTime - RG (typical) S AFE OPERATING AREA IC=5A =6Ω RL VGE=±5V RG (Ω) IC [A] IC(pulse) max μs IGBT =25 Tc μs shot. ms VCE [V] SWTime - RG (typical) Reverse Bias ASO Tc=25 IC=5A =6Ω RL VGE=±5V RG (Ω) IC [A] Tc=25 IGBT VGE =±5V =39Ω Rg shot VCE [V] Page 5

6 Oct.2 Elecical characteristics TRANSIENT THERMAL - PULSE RESISTANCE WIDTH IGBT.E+ Rthj-c ( /W).E+.E-.E-2 IGBT VCE=5V.E-3 Device 素子 shot.e-4.e-6.e-5.e-4.e-3.e-2.e-.e+.e+.e+2 PW (sec) TRANSIENT THERMAL RESISTANCE - PULSE WIDT.E+2 Rthj-c ( /W).E+.E+.E- Di.E-2 Device 素子 shot.e-3.e-6.e-5.e-4.e-3.e-2.e-.e+.e+.e+2 PT (sec) Page 6

7 Oct.2 Fig. Switching Time Test Method VCC 3 V IC=5A RL=6 Ω VGE=±5V (a) Test Circuit (b) Waveforms Page 7

8 Oct.2 Outline SLA (LF No. 822) between root Gate Burr a b JAPAN between root a:type No. b:lot No. Weight Approx. 6g Page 8