TIG067SS. N-Channel IGBT 400V, 150A, VCE(sat);3.8V Single SOIC8. Features. Specifications. TIG 067 LOT No.
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- Prudence Matthews
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1 Ordering number : ENA16 TIG6SS N-Channel IGBT 4V, 1A, VCE(sat);.8V Single SOIC8 Features Low-saturation voltage Enhansment type High speed switching 4.V drive Built-in Gate-to-Emitter protection diode Halogen free compliance Specifications Absolute Maximum Ratings at Ta= C Parameter Symbol Conditions Ratings Unit Collector-to-Emitter Voltage (DC) VCES 4 V Collector-to-Emitter Voltage (Pulse) VCESP PW 1ms 4 V Gate-to-Emitter Voltage (DC) VGES ±6 V Gate-to-Emitter Voltage (Pulse) VGESP PW 1ms ±8 V Collector Current (Pulse) ICP CM=6μF 1 A Maximum Collector-to-Emitter dv / dt dv / dt VCE V, starting Tch= C 1 V / μs Allowable Power Dissipation PD When mounted on FR4 substrate (11,68mm 1.6mm) 1. W Channel Temperature Tch 1 C Storage Temperature Tstg -4 to +1 C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions unit : mm (typ) - Product & Package Information Package : SOIC8 JEITA, JEDEC : SC-8, SOT-96 Minimum Packing Quantity : pcs./reel TIG6SS-TL-W Packing Type: TL Marking (GAGE PLANE) : Emitter : Emitter : Emitter 4 : Gate : Collector 6 : Collector : Collector 8 : Collector TL Electrical Connection to 8 TIG 6 LOT No..1 SOIC8 4 1 to Semiconductor Components Industries, LLC, 1 September, 1 O1PJ TKIM TC-6 No. A16-1/9
2 TIG6SS Electrical Characteristics at Ta= C Parameter Symbol Conditions Ratings min typ max Unit Collector-to-Emitter Breakdown Voltage V(BR)CES IC=mA, VGE=V 4 V Collector-to-Emitter Cutoff Current ICES VCE=V, VGE=V 1 μa Gate-to-Emitter Leakage Current IGES VGE=±6V, VCE=V ±1 μa Gate-to-Emitter Threshold Voltage VGE(off) VCE=1V, IC=1mA.4 1. V Collector-to-Emitter Saturation Voltage VCE(sat) IC=1A, VGE=4V.8 V Input Capacitance Cies 1 pf Output Capacitance Coes VCE=1V, f=1mhz 9 pf Reverse Transfer Capacitance Cres 4 pf Fall Time tf IC=1A, VCC=V, Resistor load VGE=4V, RG=6Ω ns Fig1 Large Current R Load Switching Circuit RL CM + VCC R G 4V V 1kΩ TIG6SS Note1. Gate Series Resistance RG 6Ω is recommended for protection purpose at the time of turn OFF. However, if dv / dt 1 / μs is satisfied at customer s actual set evaluation, RG < 6Ω can also be used. Note. The collector voltage gradient dv / dt must be smaller than 1V / μs to protect the device when it is turned off. Ordering Information Device Package Shipping memo TIG6SS-TL-W SOIC8,pcs./reel Pb Free and Halogen Free No. A16-/9
3 TIG6SS Collector Current, I C -- A V V GE =.V IC -- VCE.V Tc= C.V Collector Current, I C -- A V CE =V IC -- VGE Tc= -- C C C Collector-to-Emitter Voltage, V CE -- V Collector-to-Emitter Voltage, V CE -- V IT14 VCE -- VGE Tc= -- C I C =1A 1A 1A Collector-to-Emitter Voltage, V CE -- V Gate-to-Emitter Voltage, V GE -- V IT1 VCE -- VGE Tc= C I C =1A 1A 1A Collector-to-Emitter Voltage, V CE -- V Gate-to-Emitter Voltage, V GE -- V VCE -- VGE Tc= C IC =1A 1A 1A IT16 Collector-to-Emitter Saturation Voltage, V CE (sat) -- V Gate-to-Emitter Voltage, V GE -- V VCE(sat) -- Tc IC =1A 1A 1A IT1 VGE=4V Gate-to-Emitter Cutoff Voltage, V GE (off) -- V Case Temperature, Tc -- C IT14 -- pf Cies, Coes, Cres Gate-to-Emitter Voltage, V GE -- V IT18 Case Temperature, Tc -- C IT19 VGE(off) -- Tc Cies, Coes, Cres -- VCE 1 V CE =1V Cies f=1mhz I C =1mA Coes Cres Collector-to-Emitter Voltage, V CE -- V IT141 No. A16-/9
4 TIG6SS Turn OFF dv / dt -- V / μs Switching Time, SW Time -- ns SW Time -- ICP Switching test circuit Fig.1 V GE =4V V CC =V R G =6Ω td(off) tf t r td(on) 1 Collector Current (Pulse), I CP -- A IT19 dv / dt -- RG Switching test circuit Fig.1 V GE =4V V CC =V I CP =1A Switching Time, SW Time -- ns Collector Current (Pulse), I CP -- A SW Time -- RG Switching test circuit Fig.1 V GE =4V V CC =V I CP =1A C M =6μF PW=μS td(off) t f t r td(on) Gate Series Resistance, R G -- Ω IT194 ICP -- VGE Tc C C M =6μF Maximum Capacitor, C M -- μf Gate Series Resistance, R G -- Ω IT14 CM -- ICP V GE =4V V CE =V Tc= C Tc= C dv / dt, dv / dt -- V / μs Gate-to-Emitter Voltage, V GE -- V IT146 dv / dt -- Turn OFF IC Tc C V CE =V 1 Allowable Power Dissipation, P D -- W Collector Current (Pulse), I CP -- A IT14 PD -- Ta 1.4 When mounted on FR4 substrate (11,68mm 1.6mm) Ambient Temperature, Ta -- C IT Turn OFF Collector Current, Turn OFF I C -- A IT148 No. A16-4/9
5 TIG6SS Definition of dv/dt dv/dt is defined as the maximum slope of the below VCE curve during turn-off period. dv/dt=δvce/δt=δvce/1ns Overall waveform Enlarged picture of turn-off period V,I V CE Turn-off period Turn off V CE Δt=1ns I CP Turn off IC ΔV CE I C t V CE Definition of Switching Time V GE V GE :9% V GE :1% t V CE V CE :9% V CE :1% V CE :1% t I C t d (on) t r t d (off) I C :9% I C :1% t t f No. A16-/9
6 TIG6SS Taping Specification TIG6SS-TL-W No. A16-6/9
7 TIG6SS Feed D i rec t ion No. A16-/9
8 TIG6SS Outline Drawing TIG6SS-TL-W Land Pattern Example Mass (g) Unit Unit: mm.8 * For reference mm No. A16-8/9
9 TIG6SS ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC s product/patent coverage may be accessed at SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PS No. A16-9/9
10 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: ON Semiconductor: TIG6SS-TL-W
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Ordering number : EN1F SB11/SD16 Bipolar Transistor ( )V, ( )A, Low VCE(sat), (PNP)NPN Single PCP http://onsemi.com Applicaitons Voltage regulators, relay drivers, lamp drivers, electrical equipment Features
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Ordering number : ENA16D SMP P-Channel Power MOSFET V, 1A, 8.mΩ, TO-6-L/TO-6 http://onsemi.com Features ON-resistance RDS(on)1=6.mΩ (typ.) Input capacitance Ciss=14pF (typ.) 4V drive TO-6 Specifications
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Ordering number : EN9B SBE80 Schottky Barrier Diode 0V, 0.A, Low IR http://onsemi.com Features Low forward voltage (VF max=0.v) Fast reverse recovery time (trr max=0ns) Composite type with diodes contained
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Ordering number : ENA1559B Power MOSFET 60V, 62mΩ, 12A, Single P-Channel http://onsemi.com Features Low On-Resistance Low Gate Charge Pb-free and RoHS Compliance High Speed Switching ESD Diode-Protected
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Ordering number : EN19B SB114/SD164 Bipolar Transistor ( )V, ( )A, Low VCE(sat), (PNP)NPN Single PCP http://onsemi.com Applications Voltage regulators, relay drivers, lamp drivers, electrical equipment
More informationTc=25 C 3.5 W When mounted on ceramic substrate (600mm 2 0.8mm) 1.3 W Junction Temperature Tj 150 C Storage Temperature Tstg - 55 to +150 C
Ordering number : ENA2294A N-Channel Power MOSFET 60V, 4.5A, 117mΩ, Single PCP http://onsemi.com Features On-resistance RDS(on)1=92mΩ(typ.) 4V drive Protection Diode in Halogen free compliance Specifications
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Ordering number : ENAE SK48LS N-Channel Power MOSFET 6V, 14A, 61mΩ, TO-F-FS http://onsemi.com Features ON-resistance RDS(on)=.4Ω (typ.) 1V drive Input capacitance Ciss=1pF (typ.) Specifications Absolute
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Ordering number : ENA1749 SMA319 MMIC Amplifier, 3V, 16mA,.1 to 3.6GHz, MCPH6 http://onsemi.com Features High Gain Wideband response Low current High output power Port impedance : Gp=23 typ. @1GHz : fu=3.6ghz
More informationParameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 600 V Gate-to-Source Voltage VGSS ±30 V
Ordering number : ENAC SK98FS N-Channel Power MOSFET V, A,.Ω, TO-F-FS http://onsemi.com Features ON-resistance RDS(on)=.8Ω (typ.) V drive Input capacitance Ciss=pF (typ.) Repetitive avalanche guarantee
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Power MOSFET 35V, 104mΩ, 3A, Single N-Channel This Power MOSFET is produced using ON Semiconductor s trench technology, which is specifically designed to minimize gate charge and low on resistance. This
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Ordering number : ENA18A RD006FR Planar Ultrafast Rectifier Fast trr type, 0A, 600V, 0ns, TO-0F-FS http://onsemi.com Features VF=1.V max (IF=0A) VRRM=600V trr=1ns (typ.) Halogen free compliance Specifications
More information2SC5994 Bipolar Transistor 50V, 2A, Low VCE(sat), NPN Single
Bipolar Transistor 50V, 2A, Low VCE(sat), NPN Single Features Adoption of MBIT Process Low Collector to Emitter Saturation Large Current Capacity High Speed Switching ELECTRICAL CONNECTION 2 Typical Applications
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Power MOSFET 30V, 303mΩ, 1.6A, Single P-Channel This Power MOSFET is produced using ON Semiconductor s trench technology, which is specifically designed to minimize gate charge and low on resistance. This
More informationThis product is designed to ESD immunity < 200V*, so please take care when handling. * Machine Model
1HN4CH Power MOSFET V, 8Ω, ma, Single N-Channel http://onsemi.com Features 4V drive Halogen free compliance Specifications Absolute Maximum Ratings at Ta = C Parameter Symbol Conditions Value Unit Drain
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Power MOSFET 12V, 69mΩ, 3.5A, Single P-Channel This Power MOSFET is produced using ON Semiconductor s trench technology, which is specifically designed to minimize gate charge and low on resistance. This
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MCH666 Power MOSFET V, 16mΩ, A, Dual N-Channel Features ON-Resistance Nch : RDS(on)1=1mW (typ) 1.8V Drive ESD Diode - Protected Gate Pb-Free, Halogen Free and RoHS Compliance Specifications Absolute Maximum
More informationMCH6664. P-Channel Power MOSFET 30V, 1.5A, 325mΩ, Dual MCPH6. Features
Ordering number : ENA81A MCH6664 P-Channel Power MOSFET V, 1.A, mω, Dual MCPH6 http://onsemi.com Features ON-resistance Pch : RDS(on)1=mW (typ.) 4V drive Halogen free compliance Specifications Absolute
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Small Signal MOSFET 100V, 18Ω, 170mA, Single P-Channel This Power MOSFET is produced using ON Semiconductor s trench technology, which is specifically designed to minimize gate charge and low on resistance.
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Power MOSFET 30V, 215mΩ, 2.0A, Single P-Channel This Power MOSFET is produced using ON Semiconductor s trench technology, which is specifically designed to minimize gate charge and low on resistance. This
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Ordering number : ENA040A SB01-1C Schottky Barrier Diode 10V, 0.1A, Low IR, Single CP http://onsemi.com Applications High frequency rectification (switching regulators, converters, choppers) Features Low
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Power MOSFET 12V, 198mΩ, 2A, Single P-Channel This Power MOSFET is produced using ON Semiconductor s trench technology, which is specifically designed to minimize gate charge and low on resistance. This
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Power MOSFET 250V, 6.5Ω, 350mA, Single N-Channel Features On-Resistance RDS(on)1=5Ω (typ) 2.5V Drive Pb-Free, Halogen Free and RoHS Compliance ESD Diode - Protected Gate Low Ciss and High Speed Switching
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Power MOSFET 30V, 98mΩ, 3.5A, Single P-Channel This Power MOSFET is produced using ON Semiconductor s trench technology, which is specifically designed to minimize gate charge and low on resistance. This
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Power MOSFET 30V, 180mΩ, 1.8A, Single N-Channel This low-profile high-power MOSFET is produced using ON Semiconductor s trench technology, which is specifically designed to minimize gate charge and ultra
More informationECH8659. Power MOSFET 30V, 24mΩ, 7A, Dual N-Channel
Power MOSFET 30V, 24mΩ, 7A, Dual N-Channel This Power MOSFET is produced using ON Semiconductor s trench technology, which is specifically designed to minimize gate charge and low on resistance. This device
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Power MOSFET 35V, 37mΩ, 6A, Single N-Channel This Power MOSFET is produced using ON Semiconductor s trench technology, which is specifically designed to minimize gate charge and low on resistance. This
More informationFully compatible input to LSTTL/CMOS Withstand voltage of 600V is assured. Output current: 170mA Source, 340mA Sink High-speed switching
Ordering number : EN956 TND525SS Excellent Power Device Half-bridge Drive, Single SOIC8 http://onsemi.com Features 2-input 2-output half-brigde drive Monolithic structure Low side output supervisory circuit
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Ordering number : ENA089A MCH4009 RF Transistor.5V, 40mA, ft=25ghz, NPN Single MCPH4 http://onsemi.com Features Low-noise use : NF=1.1dB typ (f=2ghz) High cut-off frequency : ft=25ghz typ (VCE=V) Low operating
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SK596S JFET V, 15 to 5µA, 1.mS, N-Channel Features Low output noise voltage : VNO= -11dB max (VCC=4.5V, RL=1kW, Cin=15pF, VIN=V, A curve) Especiallysuited for use in condenser microphone for audio equipments
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Ordering number : ENA2052 LA1225MC Monolithic Linear IC FM IF Detector IC http://onsemi.com Overview The LA1225MC is a Low-voltage operation (1.8V or higher) FM IF detector IC for the electronic tuning
More informationIs Now Part of To learn more about ON Semiconductor, please visit our website at
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC
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Ordering number : EN7633A Monolithic Digital IC PWM Current Control Stepping Motor Driver http://onsemi.com Overview The is a PWM current control stepping motor driver that uses a bipolar drive technique.
More information3.5 W (reference value) : mm 76.1 mm 1.6 mm Operating temperature Topr 20 to +85 C Storage temperature Tstg 55 to +150 C
Ordering number : EN7391 LB11651 Monolithic Digital IC PWM Input Forward/Reverse Motor Driver http://onsemi.com Overview The LB11651 is a full bridge driver that supports switching between forward and
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SK1 N-Channel JFET 1V,. to ma, ms Applications AM Tuner RF Amp, Low-noise Amp HF Low-noise Amp Features Adoption of FBET Process Large yfs Small Ciss Very Low Noise Figure Specifications Absolute Maximum
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