NSVS50030SB3 NSVS50031SB3. Bipolar Transistor ( )50 V, ( )3 A, Low V CE (sat), (PNP)NPN Single

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1 NSVSSB, Bipolar Transistor ( ) V, ( ) A, Low V CE (sat), (PNP)NPN Single This device is bipolar junction transistor featuring high current, low saturation voltage, and high speed switching. Suitable for motor driver, relay driver, DC DC converter of automotive applications. AEC Qqualified and PPAP capable. Features Large Current Capacitance Low Collector to Emitter Saturation Voltage High Speed Switching High Allowable Power Dissipation AEC QQualified and PPAP Capable Pb Free, Halogen Free and RoHS Compliance Ultra Small Package Facilitates Miniaturization in End Products (Mounting Height:.9 mm) Typical Applications DC / DC Converter Relay Drivers, Lamp Drivers, Motor Drivers Flash Specifications ABSOLUTE MAXIMUM RATINGS at T A = C Parameter Symbol Value Unit Collector to Base Voltage V CBO ( ) V Collector to Emitter Voltage V CES ( ) V Collector to Emitter Voltage V CEO ( ) V Emitter to Base Voltage V EBO ( )6 V Collector Current I C ( ) A Collector Current (Pulse) I CP ( )6 A Base Current I B ( )6 ma Collector Dissipation (Note ) P C. W Junction Temperature Tj C Storage Temperature Tstg to + C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.. Surface mounted on ceramic substrate. (6 mm x.8 mm) ELECTRICAL CONNECTION NSVSSB XXX M CPH CASE 8BA MARKING DIAGRAMS XXXM ORDERING INFORMATION See detailed ordering and shipping information on page of this data sheet. = HAE: NSVSSB = HCE: = Single Digit Date Code Semiconductor Components Industries, LLC, December, 8 Rev. Publication Order Number: NSVSSB/D

2 NSVSSB, ORDERING INFORMATION Device Marking Package Shipping (Qty / Packing) NSVSSBTG HAE CPH NSVSSBSTG HCE (Pb Free / Halogen Free),/ Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8/D. ELECTRICAL CHARACTERISTICS (T C = C unless otherwise noted) Parameter Symbol Conditions Value Min Typ Max Collector Cutoff Current I CBO V CB = ( )4 V, I E = A ( ) μa Emitter Cutoff Current I EBO V EB = ( )4 V, I C = A ( ) μa DC Current Gain h FE V CE = ( ) V, I C = ( ) ma Gain Bandwidth Product f T V CE = ( ) V, I C = ( ) ma Output Capacitance Cob V CB = ( ) V, f = MHz Collector to Emitter Saturation Voltage V CE (sat) I C = ( ) A, I B = ( ) ma I C = ( ) A, I B = ( ) ma Base to Emitter Saturation Voltage V BE (sat) I C = ( ) A, I B = ( ) ma 6 Unit (6) 8 MHz (4) pf ( ) 8 ( ) mv ( 8) 4 ( ) mv ( ).88 ( ). V Collector to Base Breakdown Voltage V (BR)CBO I C = ( ) A, I E = A ( ) V Collector to Emitter Breakdown Voltage V (BR)CES I C = ( ) A, R BE = ( ) Collector to Emitter Breakdown Voltage V (BR)CEO I C = ( ) ma, R BE = ( ) V Emitter to Base Breakdown Voltage V (BR)EBO I E = ( ) A, I C = A Turn On Time t on See Fig. () ns Storage Time t stg () ns Fall Time t f () ns Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. ( )6 V V PW= s DC % INPUT IB IB OUTPUT PW= s DC % INPUT IB IB OUTPUT VR RB + + F 4 F RL VR RB + + F 4 F RL V BE = V V CC = V V BE = V V CC = V I B = I B = I C = A I B = I B = I C = A NSVSSB Figure. Switching Time Test Circuit

3 NSVSSB, TYPICAL PERFORMANCE CHARACTERISTICS NSVSSB ma 4 ma I B = ma V CE, Collector to Emitter Voltage [V] Figure. I C V CE ma ma 8 ma 6 ma 4 ma ma ma Figure. I C V CE 8 ma 6 ma 4 ma ma ma ma I B = ma V CE, Collector to Emitter Voltage [V].. NSVSSB V CE = V.. V CE = V.... C C V BE, Base to Emitter Voltage [V] V BE, Base to Emitter Voltage [V].... C C Figure 4. I C V BE Figure. I C V BE h FE, DC Current Gain C C NSVSSB V CE = V h FE, DC Current Gain, V CE = V C C Figure 6. h FE I C Figure. h FE I C

4 NSVSSB, TYPICAL PERFORMANCE CHARACTERISTICS (Continued) f T, Gain Bandwidth Product [MHz] NSVSSB V CE = V... f T, Gain Bandwidth Product [MHz] V CE = V... Figure 8. f T I C Figure 9. f T I C Cob, Output Capacitance [pf] NSVSSB f = MHz Cob, Output Capacitance [pf] f = MHz. V CB, Collector to Base Voltage [V].. V CB, Collector to Base Voltage [V] Figure. Cob V CB Figure. Cob V CB V CE (sat), Collector to Emitter NSVSSB I C / I B = C C... V CE (sat), Collector to Emitter C I C / I B = C... Figure. V CE (sat) I C Figure. V CE (sat) I C 4

5 NSVSSB, TYPICAL PERFORMANCE CHARACTERISTICS (Continued) V CE (sat), Collector to Emitter NSVSSB I C / I B = C C... Figure 4. V CE (sat) I C V CE (sat), Collector to Emitter C I C / I B = C... Figure. V CE (sat) I C NSVSSB I C / I B = I C / I B = V BE (sat), Base to Emitter T A = C C C V BE (sat), Base to Emitter T A = C C C Figure 6. V BE (sat) I C Figure. V BE (sat) I C.. DC operation NSVSSB/ ms ms ms s s T A = C Single Pulse Mounted on a ceramic board (6 mm x.8 mm) For PNP minus sign is omitted... V CE, Collector to Emitter Voltage [V] P C, Collector Dissipation [W] T A, Ambient Temperature [ C] Figure 8. ASO Figure 9. P C T A

6 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS CPH CASE 8BA ISSUE O DATE NOV DOCUMENT NUMBER: STATUS: NEW STANDARD: Semiconductor Components Industries, LLC, October, Rev. DESCRIPTION: 98AON64E ON SEMICONDUCTOR STANDARD CPH Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped CONTROLLED COPY in red. Case Outline Number: PAGE OF XXX

7 DOCUMENT NUMBER: 98AON64E PAGE OF ISSUE REVISION DATE O RELEASED FOR PRODUCTION FROM SANYO ENACT# TC TO ON NOV SEMICONDUCTOR. REQ. BY D. TRUHITTE. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Semiconductor Components Industries, LLC, November, Rev. O Case Outline Number: 8BA

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