NSS60601MZ4. 60 V, 6.0 A, Low V CE(sat) NPN Transistor. 60 VOLTS, 6.0 AMPS 2.0 WATTS NPN LOW V CE(sat) TRANSISTOR EQUIVALENT R DS(on) 50 m

Transcription

1 NSS66MZ 6 V, 6. A, Low V CE(sat) NPN Transistor ON Semiconductor s e 2 PowerEdge family of low V CE(sat) transistors are surface mount devices featuring ultra low saturation voltage (V CE(sat) ) and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. Typical applications are DCDC converters and power management in portable and battery powered products such as cellular and cordless phones, PDAs, computers, printers, digital cameras and MP3 players. Other applications are low voltage motor controls in mass storage products such as disc drives and tape drives. In the automotive industry they can be used in air bag deployment and in the instrument cluster. The high current gain allows e 2 PowerEdge devices to be driven directly from PMU s control outputs, and the Linear Gain (Beta) makes them ideal components in analog amplifiers. Features NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ Qualified and PPAP Capable These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant* Complementary to NSS66MZ MAXIMUM RATINGS (T A = ) Rating Symbol Max Unit Collector-Emitter Voltage V CEO 6 Vdc Collector-Base Voltage V CBO Vdc Emitter-Base Voltage V EBO 6. Vdc Collector Current Continuous I C 6. A Collector Current Peak I CM 2. A Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 6 VOLTS, 6. AMPS 2. WATTS NPN LOW V CE(sat) TRANSISTOR EQUIVALENT R DS(on) 5 m 2 3 SOT223 CASE 38E STYLE C 2, B E 3 Schematic MARKING DIAGRAM AYW 66 A = Assembly Location Y = Year W = Work Week 66 = Specific Device Code = PbFree Package PIN ASSIGNMENT C B C E 2 3 Top View Pinout *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. Semiconductor Components Industries, LLC, 23 August, 23 Rev. 5 Publication Order Number: NSS66MZ/D

2 NSS66MZ THERMAL CHARACTERISTICS Total Device Dissipation T A = Derate above Thermal Resistance, JunctiontoAmbient Characteristic Symbol Max Unit P D (Note ) mw mw/ C R JA (Note ) 55 C/W Total Device Dissipation T A = Derate above P D (Note 2) W mw/ C Thermal Resistance, JunctiontoAmbient R JA (Note 2) 6 C/W Total Device Dissipation (Single Pulse < sec.) P Dsingle (Note 3) 7 mw Junction and Storage Temperature Range T J, T stg 55 to +5 C. 7.6 mm 2, oz. copper traces mm 2, oz. copper traces. 3. Thermal response. ORDERING INFORMATION NSS66MZTG Device Package Shipping SOT223 (PbFree), / Tape & Reel NSV66MZTG* NSS66MZT3G SOT223 (PbFree) SOT223 (PbFree), / Tape & Reel, / Tape & Reel NSV66MZT3G* SOT223 (PbFree), / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8/D. *NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ Qualified and PPAP Capable. 2

3 NSS66MZ ELECTRICAL CHARACTERISTICS (T A = unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS CollectorEmitter Breakdown Voltage (I C = madc, I B = ) CollectorBase Breakdown Voltage (I C =. madc, I E = ) EmitterBase Breakdown Voltage (I E =. madc, I C = ) Collector Cutoff Current (V CB = Vdc, I E = ) Emitter Cutoff Current (V EB = 6. Vdc) (BR)CEO 6 V (BR)CBO V (BR)EBO 6. I CBO. I EBO. Vdc Vdc Vdc Adc Adc ON CHARACTERISTICS DC Current Gain (Note ) (I C = 5 ma, V CE = 2. V) (I C =. A, V CE = 2. V) (I C = 2. A, V CE = 2. V) (I C = 6. A, V CE = 2. V) CollectorEmitter Saturation Voltage (Note ) (I C =. A, I B = 2. ma) (I C =. A, I B =. A) (I C = 2. A, I B =.2 A) (I C = 3. A, I B = 6 ma) (I C = 6. A, I B =.6 A) BaseEmitter Saturation Voltage (Note ) (I C =. A, I B =. A) BaseEmitter Turnon Voltage (Note ) (I C =. A, V CE = 2. V) Cutoff Frequency (I C = 5 ma, V CE = V, f =. MHz) h FE V CE(sat) V BE(sat).9 V BE(on).9 f T Input Capacitance (V EB = 5. V, f =. MHz) Cibo pf Output Capacitance (V CB = V, f =. MHz) Cobo 37 pf SWITCHING CHARACTERISTICS Delay (V CC = 3 V, I C = 75 ma, I B = 5 ma) t d 85 ns Rise (V CC = 3 V, I C = 75 ma, I B = 5 ma) t r 5 ns Storage (V CC = 3 V, I C = 75 ma, I B = 5 ma) t s 35 ns Fall (V CC = 3 V, I C = 75 ma, I B = 5 ma) t f 25 ns. Pulsed Condition: Pulse Width = 3 msec, Duty Cycle 2%. 2.5 V V V MHz P D, POWER DISSIPATION (W) T C T A T J, TEMPERATURE ( C) Figure. Power Derating 3

4 NSS66MZ TYPICAL CHARACTERISTICS h FE, DC CURRENT GAIN C 5 C V CE = 2 V h FE, DC CURRENT GAIN C 55 C V CE = V Figure 2. DC Current Gain... Figure 3. DC Current Gain V CE(sat), COLLECTOREMITTER.. I C /I B = 5 C 55 C V CE(sat), COLLECTOREMITTER. I C /I B = 5 5 C 55 C.... Figure. CollectorEmitter Saturation Voltage.... Figure 5. CollectorEmitter Saturation Voltage V CE(sat), COLLECTOREMITTER..5 A A 2 A. A..... I B, BASE CURRENT (A) I C = 6 A 3 A A Figure 6. Collector Saturation Region V BE(on), EMITTERBASE VOLTAGE (V).2 V CE = 2 V 55 C C.2... Figure 7. V BE(on) Voltage

5 NSS66MZ TYPICAL CHARACTERISTICS V BE(sat), EMITTERBASE I C /I B = 55 C 5 C V BE(sat), EMITTERBASE I C /I B = 5 55 C 5 C... Figure 8. BaseEmitter Saturation Voltage... Figure 9. BaseEmitter Saturation Voltage C ibo, INPUT CAPACITANCE (pf) V EB, EMITTER BASE VOLTAGE (V) Figure. Input Capacitance T J = f test = MHz C obo, OUTPUT CAPACITANCE (pf) V CB, COLLECTOR BASE VOLTAGE (V) Figure. Output Capacitance T J = f test = MHz f Tau, CURRENT BANDWIDTH PRODUCT (MHz) T A = V CE = V. ms ms.5 ms ms... Figure 2. CurrentGain Bandwidth Product. V CE, COLLECTOREMITTER VOLTAGE (V) Figure 3. Safe Operating Area 5

6 NSS66MZ PACKAGE DIMENSIONS D b SOT223 (TO26) CASE 38E ISSUE N NOTES:. DIMENSIONING AND TOLERANCING PER ASME Y.5M, CONTROLLING DIMENSION: INCH..8 (3) H E e 2 3 e A A b E L L C SOLDERING FOOTPRINT* MILLIMETERS INCHES DIM MIN NOM MAX MIN NOM MAX A A b b c D E e e L.2.8 L H E STYLE : PIN. BASE 2. COLLECTOR 3. EMITTER. COLLECTOR SCALE 6: mm inches *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC s product/patent coverage may be accessed at SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 563, Denver, Colorado 827 USA Phone: or Toll Free USA/Canada Fax: or Toll Free USA/Canada orderlit@onsemi.com N. American Technical Support: Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: Japan Customer Focus Center Phone: ON Semiconductor Website: Order Literature: For additional information, please contact your local Sales Representative NSS66MZ/D