MUN2132, MMUN2132L, MUN5132, DTA143EE, DTA143EM3, NSBA143EF3. Digital Transistors (BRT) R1 = 4.7 k, R2 = 4.7 k

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1 MUN, MMUNL, MUN5, DTA4EE, DTA4EM, NSBA4EF Digital Transistors (BRT) R = 4.7 k, R = 4.7 k PNP Transistors with Monolithic Bias Resistor Network This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. Features Simplifies Circuit Design Reduces Board Space Reduces Component Count S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q Qualified and PPAP Capable These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (T A = 5 C) PIN BASE (INPUT) PIN CONNECTIONS R R PIN COLLECTOR (OUTPUT) PIN EMITTER (GROUND) MARKING DIAGRAMS XX M XXX M SC 59 CASE 8D STYLE SOT CASE 8 STYLE 6 Rating Symbol Max Unit Collector Base Voltage V CBO 5 Collector Emitter Voltage V CEO 5 XX M SC 7/SOT CASE 49 STYLE Collector Current Continuous I C madc Input Forward Voltage V IN(fwd) Input Reverse Voltage V IN(rev) XX M SC 75 CASE 46 STYLE Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. XX M SOT 7 CASE 6AA STYLE X M SOT CASE 54AA STYLE XXX = Specific Device Code M = Date Code* = Pb Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. ORDERING INFORMATION See detailed ordering, marking, and shipping information in the package dimensions section on page of this data sheet. Semiconductor Components Industries, LLC, 6 November, 6 Rev. 6 Publication Order Number: DTA4E/D

2 MUN, MMUNL, MUN5, DTA4EE, DTA4EM, NSBA4EF Table. ORDERING INFORMATION Device Part Marking Package Shipping MUNTG, NSVMUNTG* 6J SC 59 (Pb Free) / Tape & Reel MMUNLTG, NSVMMUNLTG* A6J SOT (Pb Free) MUN5TG, NSVMUN5TG* 6J SC 7/SOT (Pb Free) DTA4EETG 4 SC 75 (Pb Free) DTA4EMT5G, NSVDTA4EMT5G* 6J SOT 7 (Pb Free) NSBA4EFT5G A (9 )* SOT (Pb Free) / Tape & Reel / Tape & Reel / Tape & Reel 8 / Tape & Reel 8 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8/D. *S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q Qualified and PPAP Capable. ** (xx ) = Degree rotation in the clockwise direction. P D, POWER DISSIPATION (mw) () () () (4) (5) () SC 75 and SC 7/SOT ; Minimum Pad () SC 59; Minimum Pad () SOT ; Minimum Pad (4) SOT ; mm, oz. copper trace (5) SOT 7; Minimum Pad AMBIENT TEMPERATURE ( C) Figure. Derating Curve

3 MUN, MMUNL, MUN5, DTA4EE, DTA4EM, NSBA4EF Table. THERMAL CHARACTERISTICS THERMAL CHARACTERISTICS (SC 59) (MUN) Total Device Dissipation T A = 5 C (Note ) Derate above 5 C (Note ) Thermal Resistance, (Note ) Junction to Ambient Characteristic Symbol Max Unit P D R JA 54 7 mw mw/ C Thermal Resistance, (Note ) Junction to Lead R JL Junction and Storage Temperature Range T J, T stg 55 to +5 C THERMAL CHARACTERISTICS (SOT ) (MMUNL) Total Device Dissipation T A = 5 C (Note ) Derate above 5 C (Note ) Thermal Resistance, (Note ) Junction to Ambient Thermal Resistance, (Note ) Junction to Lead P D R JA 58 R JL 74 8 mw mw/ C Junction and Storage Temperature Range T J, T stg 55 to +5 C THERMAL CHARACTERISTICS (SC 7/SOT ) (MUN5) Total Device Dissipation T A = 5 C (Note ) Derate above 5 C (Note ) Thermal Resistance, (Note ) Junction to Ambient Thermal Resistance, (Note ) Junction to Lead P D.6.5 R JA 68 4 R JL 8 mw mw/ C Junction and Storage Temperature Range T J, T stg 55 to +5 C THERMAL CHARACTERISTICS (SC 75) (DTA4EE) Total Device Dissipation T A = 5 C (Note ) Derate above 5 C (Note ) Thermal Resistance, (Note ) Junction to Ambient P D.6.4 R JA 6 4 mw mw/ C Junction and Storage Temperature Range T J, T stg 55 to +5 C THERMAL CHARACTERISTICS (SOT 7) (DTA4EM) Total Device Dissipation T A = 5 C (Note ) Derate above 5 C (Note ) Thermal Resistance, (Note ) Junction to Ambient P D R JA 48 5 mw mw/ C Junction and Storage Temperature Range T J, T stg 55 to +5 C. FR Minimum Pad.. FR x. Inch Pad.. FR mm, oz. copper traces, still air. 4. FR 5 mm, oz. copper traces, still air.

4 MUN, MMUNL, MUN5, DTA4EE, DTA4EM, NSBA4EF Table. THERMAL CHARACTERISTICS Characteristic THERMAL CHARACTERISTICS (SOT ) (NSBA4EF) Total Device Dissipation T A = 5 C (Note ) (Note 4) Derate above 5 C (Note ) (Note 4) Thermal Resistance, (Note ) Junction to Ambient (Note 4) Symbol Max P D R JA 49 4 Unit mw mw/ C Thermal Resistance, Junction to Lead (Note ) R JL 9 Junction and Storage Temperature Range T J, T stg 55 to +5 C. FR Minimum Pad.. FR x. Inch Pad.. FR mm, oz. copper traces, still air. 4. FR 5 mm, oz. copper traces, still air. Table. ELECTRICAL CHARACTERISTICS (T A = 5 C, unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector Base Cutoff Current I CBO nadc (V CB = 5 V, I E = ) Collector Emitter Cutoff Current (V CE = 5 V, I B = ) Emitter Base Cutoff Current (V EB = 6. V, I C = ) Collector Base Breakdown Voltage (I C = A, I E = ) Collector Emitter Breakdown Voltage (Note 5) (I C =. ma, I B = ) ON CHARACTERISTICS DC Current Gain (Note 5) (I C = 5. ma, V CE = V) Collector Emitter Saturation Voltage (Note 5) (I C = ma, I B =. ma) Input Voltage (off) (V CE = 5. V, I C = A) Input Voltage (on) (V CE =. V, I C = ma) Output Voltage (on) (V CC = 5. V, V B =.5 V, R L =. k ) Output Voltage (off) (V CC = 5. V, V B =.5 V, R L =. k ) CEO 5 I EBO.5 V (BR)CBO 5 V (BR)CEO 5 h FE 5 7 V CE(sat).5 V i(off)..5 V i(on)..4 V OL. V OH 4.9 nadc madc Input Resistor R k Resistor Ratio R /R.8.. Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 5. Pulsed Condition: Pulse Width = msec, Duty Cycle %. 4

5 MUN, MMUNL, MUN5, DTA4EE, DTA4EM, NSBA4EF TYPICAL CHARACTERISTICS MUN, MMUNL, MUN5, DTA4EE, DTA4EM V CE(sat), COLLECTOR EMITTER VOLT- AGE (V)... I C /I B = 5 C 75 C 5 C 4 5 h FE, DC CURRENT GAIN T A = 5 C 75 C 5 C V CE = V Figure. V CE(sat) vs. I C Figure. DC Current Gain C ob, OUTPUT CAPACITANCE (pf) f = khz l E = A T A = 5 C.. 75 C 5 C T A = 5 C V O = 5 V V R, REVERSE VOLTAGE (V) V in, INPUT VOLTAGE (V) Figure 4. Output Capacitance Figure 5. Output Current vs. Input Voltage V in, INPUT VOLTAGE (V) T A = 5 C 75 C 5 C V O =. V. 4 5 Figure 6. Input Voltage vs. Output Current 5

6 MUN, MMUNL, MUN5, DTA4EE, DTA4EM, NSBA4EF TYPICAL CHARACTERISTICS NSBA4EF V CE(sat), COLLECTOR EMITTER VOLTAGE (V).. I C /I B = 5 C 55 C 5 C 4 5 Figure 7. V CE(sat) vs. I C h FE, DC CURRENT GAIN.. 5 C 5 C 55 C V CE = V Figure 8. DC Current Gain C ob, OUTPUT CAPACITANCE (pf) f = khz I E = A T A = 5 C. 5 C 5 C 55 C V O = 5 V V R, REVERSE VOLTAGE (V) V in, INPUT VOLTAGE (V) Figure 9. Output Capacitance Figure. Output Current vs. Input Voltage V in, INPUT VOLTAGE (V) 5 C 5 C 55 C. V O =. V 4 5 Figure. Input Voltage vs. Output Current 6

7 MUN, MMUNL, MUN5, DTA4EE, DTA4EM, NSBA4EF PACKAGE DIMENSIONS SC 59 CASE 8D 4 ISSUE H D NOTES:. DIMENSIONING AND TOLERANCING PER ANSI Y4.5M, 98.. CONTROLLING DIMENSION: MILLIMETER. H E A e b E A L C MILLIMETERS DIM MIN NOM MAX MIN A A..6.. b c D E e L H E STYLE : PIN. BASE. EMITTER. COLLECTOR INCHES NOM MAX SOLDERING FOOTPRINT* SCALE : mm inches *For additional information on our Pb Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 7

8 MUN, MMUNL, MUN5, DTA4EE, DTA4EM, NSBA4EF PACKAGE DIMENSIONS SOT (TO 6) CASE 8 8 ISSUE AR A E A D e TOP VIEW SIDE VIEW HE L X b L VIEW C SEE VIEW C c END VIEW T.5 NOTES:. DIMENSIONING AND TOLERANCING PER ASME Y4.5M, CONTROLLING DIMENSION: MILLIMETERS.. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF THE BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. MILLIMETERS INCHES DIM MIN NOM MAX MIN NOM MAX A A b c D E e L L H E T STYLE 6: PIN. BASE. EMITTER. COLLECTOR RECOMMENDED SOLDERING FOOTPRINT*.9 X.9 X.8.95 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 8

9 MUN, MMUNL, MUN5, DTA4EE, DTA4EM, NSBA4EF PACKAGE DIMENSIONS SC 7 (SOT ) CASE 49 4 ISSUE N D e NOTES:. DIMENSIONING AND TOLERANCING PER ANSI Y4.5M, 98.. CONTROLLING DIMENSION: INCH. H E e E b MILLIMETERS INCHES DIM MIN NOM MAX MIN NOM MAX A A A.7 REF.8 REF b c D E e e.65 BSC.6 BSC L H E (.) A A A L c STYLE : PIN. BASE. EMITTER. COLLECTOR SOLDERING FOOTPRINT* SCALE : mm inches *For additional information on our Pb Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 9

10 MUN, MMUNL, MUN5, DTA4EE, DTA4EM, NSBA4EF PACKAGE DIMENSIONS SC 75/SOT 46 CASE 46 ISSUE G b PL. (.8) M D E e D H E. (.8) E NOTES:. DIMENSIONING AND TOLERANCING PER ANSI Y4.5M, 98.. CONTROLLING DIMENSION: MILLIMETER. MILLIMETERS INCHES DIM MIN NOM MAX MIN NOM MAX A A b C D E e. BSC.4 BSC L H E C L A A STYLE : PIN. BASE. EMITTER. COLLECTOR SOLDERING FOOTPRINT* SCALE : mm inches *For additional information on our Pb Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

11 MUN, MMUNL, MUN5, DTA4EE, DTA4EM, NSBA4EF PACKAGE DIMENSIONS SOT 7 CASE 6AA ISSUE D b X e D TOP VIEW X X L BOTTOM VIEW E Y X b.8 X Y X L A H E C SIDE VIEW NOTES:. DIMENSIONING AND TOLERANCING PER ASME Y4.5M, CONTROLLING DIMENSION: MILLIMETERS.. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MILLIMETERS DIM MIN NOM MAX A b.5..7 b.5..7 C.7..7 D.5..5 E e.4 BSC H E.5..5 L.9 REF L.5..5 STYLE : PIN. BASE. EMITTER. COLLECTOR RECOMMENDED SOLDERING FOOTPRINT* X.4 X.7 PACKAGE OUTLINE.5 X.5.6 DIMENSIONS: MILLIMETERS *For additional information on our Pb Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

12 MUN, MMUNL, MUN5, DTA4EE, DTA4EM, NSBA4EF PACKAGE DIMENSIONS SOT CASE 54AA ISSUE C c D X E TOP VIEW H E SIDE VIEW Y A NOTES:. DIMENSIONING AND TOLERANCING PER ASME Y4.5M, CONTROLLING DIMENSION: MILLIMETERS.. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. MILLIMETERS DIM MIN MAX A.4.4 b.5.8 b.. c.7.7 D E e.5.4 H E.95.5 L.85 REF L.5.5 e X L b.8 X Y STYLE : PIN. BASE. EMITTER. COLLECTOR X b BOTTOM VIEW X L SOLDERING FOOTPRINT*. X X. PACKAGE OUTLINE DIMENSIONS: MILLIMETERS *For additional information on our Pb Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor s product/patent coverage may be accessed at /site/pdf/patent Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. Typical parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor 95 E. nd Pkwy, Aurora, Colorado 8 USA Phone: or Toll Free USA/Canada Fax: or Toll Free USA/Canada orderlit@onsemi.com N. American Technical Support: Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: Japan Customer Focus Center Phone: ON Semiconductor Website: Order Literature: For additional information, please contact your local Sales Representative DTA4E/D

MUN2214, MMUN2214L, MUN5214, DTC114YE, DTC114YM3, NSBC114YF3. Digital Transistors (BRT) R1 = 10 k, R2 = 47 k

MUN2214, MMUN2214L, MUN5214, DTC114YE, DTC114YM3, NSBC114YF3. Digital Transistors (BRT) R1 = 10 k, R2 = 47 k MUN224, MMUN224L, MUN524, DTC4YE, DTC4YM, NSBC4YF Digital Transistors (BRT) R = 0 k, R2 = 47 k NPN Transistors with Monolithic Bias Resistor Network This series of digital transistors is designed to replace