EMH2604. Power MOSFET 20V, 4A, 45mΩ, 20V, 3A, 85mΩ, Complementary Dual EMH8. Features. Specifications
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1 Ordering number : EN96A EMH64 Power MOSFET V, 4A, 4mΩ, V, A, 8mΩ, Complementary Dual EMH8 Features Nch + Pch MOSFET ON-resistance Nch : RDS(on)1=4mΩ(typ.) Pch : RDS(on)1=6mΩ(typ.) 1.8V drive Halogen free compliance Specifications Absolute Maximum Ratings at Ta= C Parameter Symbol Conditions N-channel P-channel Unit Drain-to-Source Voltage VDSS -- V Gate-to-Source Voltage VGSS ±1 ±1 V Drain Current (DC) ID 4 -- A Drain Current (Pulse) IDP PW 1μs, duty cycle 1% -- A Allowable Power Dissipation PD When mounted on ceramic substrate (9mm.8mm) 1unit 1. W Total Dissipation PT When mounted on ceramic substrate (9mm.8mm) 1. W Channel Temperature Tch 1 C Storage Temperature Tstg -- to +1 C This product is designed to ESD immunity < V*, so please take care when handling. * Machine Model Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions unit : mm (typ) EMH64-TL-H Product & Package Information Package : EMH8 JEITA, JEDEC : - Minimum Packing Quantity :, pcs./reel Packing Type : TL Marking 1..1 FD TL LOT No : Source1 : Gate1 : Source 4 : Gate : Drain 6 : Drain : Drain1 8 : Drain1 Electrical Connection 8 6 EMH8 1 4 Semiconductor Components Industries, LLC, 1 July, 1 61 TKIM/6111PE TKIM TC-6 No.96-1/9
2 EMH64 Electrical Characteristics at Ta= C Parameter Symbol Conditions Ratings min typ max Unit [N-channel] Drain-to-Source Breakdown Voltage V(BR)DSS ID=1mA, VGS=V V Zero-Gate Voltage Drain Current IDSS VDS=V, VGS=V 1 μa Gate-to-Source Leakage Current IGSS VGS=±8V, VDS=V ±1 μa Cutoff Voltage VGS(off) VDS=1V, ID=1mA.4 1. V Forward Transfer Admittance yfs VDS=1V, ID=A.4 S RDS(on)1 ID=4A, VGS=4.V 4 4 mω Static Drain-to-Source On-State Resistance RDS(on) ID=1A, VGS=.V 49 6 mω RDS(on) ID=.A, VGS=1.8V 4 11 mω Input Capacitance Ciss 4 pf Output Capacitance Coss VDS=1V, f=1mhz 6 pf Reverse Transfer Capacitance Crss pf Turn-ON Delay Time td(on) 9. ns Rise Time tr 6 ns See specified Test Circuit. Turn-OFF Delay Time td(off) ns Fall Time tf 8 ns Total Gate Charge Qg 4. nc Gate-to-Source Charge Qgs VDS=1V, VGS=4.V, ID=4A.6 nc Gate-to-Drain Miller Charge Qgd 1.6 nc Diode Forward Voltage VSD IS=4A, VGS=V.8 1. V [P-channel] Drain-to-Source Breakdown Voltage V(BR)DSS ID=--1mA, VGS=V -- V Zero-Gate Voltage Drain Current IDSS VDS=--V, VGS=V --1 μa Gate-to-Source Leakage Current IGSS VGS=±8V, VDS=V ±1 μa Cutoff Voltage VGS(off) VDS=--1V, ID=--1mA V Forward Transfer Admittance yfs VDS=--1V, ID=--1.A.6 S RDS(on)1 ID=--A, VGS=--4.V 6 8 mω Static Drain-to-Source On-State Resistance RDS(on) ID=--1A, VGS=--.V 98 1 mω RDS(on) ID=--.A, VGS=--1.8V 1 mω Input Capacitance Ciss pf Output Capacitance Coss VDS=--1V, f=1mhz 66 pf Reverse Transfer Capacitance Crss pf Turn-ON Delay Time td(on).1 ns Rise Time tr 1 ns See specified Test Circuit. Turn-OFF Delay Time td(off) ns Fall Time tf ns Total Gate Charge Qg 4. nc Gate-to-Source Charge Qgs VDS=--1V, VGS=--4.V, ID=--A.6 nc Gate-to-Drain Miller Charge Qgd 1.1 nc Diode Forward Voltage VSD IS=--A, VGS=V V No.96-/9
3 EMH64 Switching Time Test Circuit [N-channel] [P-channel] 4.V V VIN VIN VDD=1V ID=A RL=Ω V --4.V VIN VIN VDD= --1V ID= --1.A RL=6.6Ω PW=1μs D.C. 1% D VOUT PW=1μs D.C. 1% D VOUT G G P.G Ω S EMH64 P.G Ω S EMH64 Ordering Information Device Package Shipping memo EMH64-TL-H EMH8,pcs./reel Pb Free and Halogen Free V.V.V 1.8V ID -- VDS. 4. V DS =1V ID -- VGS V 1.V VGS=1.V Ta= C -- C C Static Drain-to-Source On-State Resistance, R DS (on) -- mω I D =.A Drain-to-Source Voltage, V DS -- V IT1499 RDS(on) -- VGS Ta= C 4A 1A Static Drain-to-Source On-State Resistance, R DS (on) -- mω Gate-to-Source Voltage, V GS -- V RDS(on) -- Ta V GS =1.8V, ID =.A V GS =.V, ID =1A V GS =4.V, ID=4A. IT Gate-to-Source Voltage, V GS -- V IT Ambient Temperature, Ta -- C IT1 No.96-/9
4 EMH64 Forward Transfer Admittance, yfs -- S Switching Time, SW Time -- ns Gate-to-Source Voltage, V GS -- V V DS =1V yfs -- ID Ta= -- C C C.1 1. IT1 SW Time -- ID V DD =1V V GS =4.V t d (on) tr td(off) t f IT1 4. VGS -- Qg V DS =1V 4. I D =4A V Total Gate Charge, Qg -- nc ID -- VDS --.V --.V --1.8V. IT1 Source Current, I S -- A Ciss, Coss, Crss -- pf 1..1 Ta= C C IS -- VSD -- C Drain-to-Source Voltage, V DS -- V A S O V GS =V Diode Forward Voltage, V SD -- V IT14 Ciss, Coss, Crss -- VDS f=1mhz Ciss Coss Crss IDP=A (PW 1μs) ID=4A Operation in this area is limited by R DS (on). 1ms DC operation 1ms 1μs IT16 Ta= C Single pulse When mounted on ceramic substrate (9mm.1.8mm) Drain-to-Source Voltage, V DS -- V IT1644 ID -- VGS --. V DS = --1V ms V --4.V --1.V --. VGS= --1.V Drain-to-Source Voltage, V DS -- V IT Ta= C -- C Gate-to-Source Voltage, V GS -- V IT144 C No.96-4/9
5 EMH64 Static Drain-to-Source On-State Resistance, R DS (on) -- mω Forward Transfer Admittance, yfs -- S RDS(on) -- VGS Static Drain-to-Source On-State Resistance, R DS (on) -- mω RDS(on) -- Ta Gate-to-Source Voltage, V GS -- V IT14 Ambient Temperature, Ta -- C IT146 yfs -- ID IS -- VSD 1 V DS = --1V V GS =V I D = --.A --1A --A Ta= -- C C C Ta= C Source Current, I S -- A V GS = --1.8V, I D = --.A VGS= --.V, ID= --1.A V GS = --4.V, I D = --.A Ta= C C -- C Switching Time, SW Time -- ns Gate-to-Source Voltage, V GS -- V IT14 SW Time -- ID V DD = --1V V GS = --4.V 1 1 t d (on) t d (off) IT VGS -- Qg VDS = --1V I D = --A t f Total Gate Charge, Qg -- nc IT1441 tr Ciss, Coss, Crss -- pf Diode Forward Voltage, V SD -- V IT148 Ciss, Coss, Crss -- VDS f=1mhz 1 Ciss Coss Crss Drain-to-Source Voltage, V DS -- V IT144 A S O IDP= --A (PW 1μs) ID= --A 1ms DC operation Operation in this area is limited by R DS (on). 1ms 1μs --.1 Ta= C Single pulse When mounted on ceramic substrate (9mm mm) Drain-to-Source Voltage, V DS -- V IT164 1ms No.96-/9
6 Allowable Power Dissipation, P D -- W PD -- Ta [Nch/Pch] When mounted on ceramic substrate (9mm.8mm) Total dissipation 1unit Ambient Temperature, Ta -- C IT1646 EMH64 No.96-6/9
7 EMH64 Embossed Taping Specification EMH64-TL-H No.96-/9
8 EMH64 Outline Drawing EMH64-TL-H Land Pattern Example Mass (g) Unit.8 * For reference mm Unit: mm No.96-8/9
9 EMH64 Note on usage : Since the EMH64 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC s product/patent coverage may be accessed at SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PS No.96-9/9
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Ordering number : EN8936A SMA3117 MMIC Amplifiler, 5V, 22.7mA,.1 to 3GHz, MCPH6 http://onsemi.com Features High Gain : Gp=33.5 typ. @2.2GHz Wideband response : fu=3.ghz Low current : ICC=22.7mA typ. High
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Ordering number : ENA0A CPH6 Bipolar Transistor 0V, 1A, Low VCE(sat) NPN Dual CPH6 http://onsemi.com Applications Relay drivers, lamp drivers, motor drivers, flash Features Composite type with two NPN
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More informationFast reverse recovery time (trr max=10ns) Low switching noise Low leakage current and high reliability due to highly reliable planar structure
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Ordering number : ENA18A RD006FR Planar Ultrafast Rectifier Fast trr type, 0A, 600V, 0ns, TO-0F-FS http://onsemi.com Features VF=1.V max (IF=0A) VRRM=600V trr=1ns (typ.) Halogen free compliance Specifications
More informationHigh-speed switching Ultrasmall package facilitates miniaturization in end products (mounting height : 0.85mm) High allowable power dissipation
Ordering number : EN18B MCH1/MCH Bipolar Transistor ( )V, ( )A, Low VCE(sat), (PNP)NPN Single MCPH http://onsemi.com Applicaitons DC / DC converters, relay drivers, lamp drivers, motor drivers, flash Features
More information(-)50V, (-)7A, Low VCE(sat), (PNP)NPN Single PCP
Ordering number : EN69D SA16/SC69 Bipolar Transistor (-)V, (-)A, Low VCE(sat), (PNP)NPN Single PCP http://onsemi.com Applicaitons Relay drivers, lamp drivers, motor drivers, flash Features Adoption of
More informationN Channel Depletion MAXIMUM RATINGS. ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted) OFF CHARACTERISTICS ON CHARACTERISTICS
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More information(-)100V, (-)2A, Low VCE(sat), (PNP)NPN Single PCP
Ordering number : EN6D SA141/SC64 Bipolar Transistor (-)1V, (-)A, Low VCE(sat), (PNP)NPN Single PCP http://onsemi.com Features Adoption of FBET, MBIT processes High breakdown voltage and large current
More informationRelay drivers, high-speed inverters, converters, and other general high-current switching applications
Ordering number : EN8C SB/SD8 Bipolar Transistor ( )V, ( )A, Low VCE(sat), (PNP)NPN Single TP/TP-FA http://onsemi.com Applications Relay drivers, high-speed inverters, converters, and other general high-current
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1 3 FEATURES RDS(ON) 110mΩ@VGS=-4.5V RDS(ON) 150mΩ@VGS=-2.5V Super high density cell design for extremely low RDS(ON) APPLICATIONS Power Management in Note book Portable Equipment Battery Powered System
More informationCollector Dissipation Tc=25 C 30 W Junction Temperature Tj 150 C Storage Temperature Tstg --55 to +150 C
Ordering number : ENA66B SA1 Bipolar Transistor V, A, Low VCE(sat) PNP TO-F-SG http://onsemi.com Applications Relay drivers, lamp drivers, motor drivers. Features Adoption of MBIT processes Low collector-to-emitter
More information500 mw When mounted on ceramic substrate (250mm 2 0.8mm) 1.3 W Junction Temperature Tj 150 C Storage Temperature Tstg --55 to +150 C
Ordering number : ENC SA1416/SC646 Bipolar Transistor ( )1V, ( )1A, Low VCE(sat), (PNP)NPN Single PCP http://onsemi.com Features Adoption of FBET, MBIT processes High breakdown voltage and large current
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Ordering number : EN9C SB11/SD181 Bipolar Transistor ( )1V, ( )A, Low VCE(sat) (PNP)NPN Single TP/TP-FA http://onsemi.com Applications Relay drivers, high-speed inverters, converters, and other general
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