Integrated Power Stage for 3.0 hp Motor Drives

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1 Беларусь г.минск тел./факс 8(17) электронные компоненты радиодетали e:mail SEMICONDUCTOR TECHNICAL DATA Order this document by MHPM7B3A6B/D Integrated Power Stage for 3. hp Motor Drives This module integrates a 3phase input rectifier bridge, 3phase output inverter and brake transistor/diode in a single convenient package. The output inverter utilizes advanced insulated gate bipolar transistors (IGBT) matched with freewheeling diodes to give optimal dynamic performance. It has been configured for use as a threephase motor drive module or for many other power switching applications. The top connector pins have been designed for easy interfacing to the user s control board. Short Circuit Rated Pin-to-Baseplate Isolation Exceeds Vac (rms) Convenient Package Outline Motorola Preferred Device 3 AMP, 6 VOLT HYBRID POWER MODULE UL Recognized and Designed to Meet VDE Access to Positive and Negative DC Bus PLASTIC PACKAGE CASE 44A1, Style 1 MAXIMUM DEVICE RATINGS (TJ = unless otherwise noted) Rating Symbol Value Unit INPUT RECTIFIER BRIDGE Repetitive Peak Reverse Voltage VRRM 6 V Average Output Rectified Current (1) IO 3 A Peak Non-repetitive Surge Current IFSM 36 A OUTPUT INVERTER IGBT Reverse Voltage VCES 6 V Gate-Emitter Voltage VGES ± 2 V Continuous IGBT Collector Current IC 3 A Peak IGBT Collector Current (PW = 1. ms) (2) IC(pk) 6 A Continuous Free-Wheeling Diode Current IF 3 A Peak Free-Wheeling Diode Current (PW = 1. ms) (2) IF(pk) 6 A IGBT Power Dissipation PD 8 W Free-Wheeling Diode Power Dissipation PD 4 W IGBT Junction Temperature Range TJ 4 to +1 C Free-Wheeling Diode Junction Temperature Range TJ 4 to +1 C (1) 1 cycle = or 6 Hz (2) 1 ms = 1.% duty cycle Preferred devices are Motorola recommended choices for future use and best overall value. Motorola, Inc. 199 MHPM7B3A6B 1 Беларусь г.минск тел./факс 8(17) e:mail minsk17@tut.by

2 Беларусь г.минск тел./факс 8(17) электронные компоненты радиодетали e:mail MAXIMUM DEVICE RATINGS (continued) (TJ = unless otherwise noted) BRAKE CIRCUIT Rating Symbol Value Unit IGBT Reverse Voltage VCES 6 V Gate-Emitter Voltage VGES ± 2 V Continuous IGBT Collector Current IC 3 A Peak IGBT Collector Current (PW = 1. ms) (2) IC(pk) 6 A IGBT Power Dissipation PD 8 W Diode Reverse Voltage VRRM 6 V Continuous Output Diode Current IF 3 A Peak Output Diode Current (PW = 1. ms) (2) IF(pk) 6 A TOTAL MODULE Isolation Voltage (4763 Hz, 1. Minute Duration) VISO VAC Ambient Operating Temperature Range TA 4 to + 8 C Operating Case Temperature Range TC 4 to + 9 C Storage Temperature Range Tstg 4 to +1 C Mounting Torque 6. lbin ELECTRICAL CHARACTERISTICS (TJ = unless otherwise noted) INPUT RECTIFIER BRIDGE Characteristic Symbol Min Typ Max Unit Reverse Leakage Current (VRRM = 6 V) IR µa Forward Voltage (IF = 3 A) VF V Thermal Resistance (Each Die) RθJC 2.7 C/W OUTPUT INVERTER Gate-Emitter Leakage Current (VCE = V, VGE = ± 2 V) IGES ± 2 µa Collector-Emitter Leakage Current (VCE = 6 V, VGE = V) TJ = Gate-Emitter Threshold Voltage (VCE = VGE, IC = 1. ma) VGE(th) V Collector-Emitter Breakdown Voltage (IC = ma, VGE = ) V(BR)CES 6 7 V Collector-Emitter Saturation Voltage (IC = 3 A, ) VCE(SAT) V Input Capacitance (VGE = V, VCE = V, f = 1. MHz) Cies 66 pf Input Gate Charge (VCE = 3 V, IC = 3 A, ) QT 22 nc Fall Time Inductive Load (VCE = 3 V, IC = 3 A,, RG = 1 Ω) ICES tfi 2. µa ma 3 ns Turn-On Energy (VCE = 3 V, IC = 3 A,, RG = 1 Ω) Turn-Off Energy (VCE = 3 V, IC = 3 A,, RG = 1 Ω) E(on) 2. mj E(off) 2. mj Diode Forward Voltage (IF = 3 A, VGE = V) VF V Diode Reverse Recovery Time (IF = 3 A, V = 3 V, di/dt = A/µs) trr 1 2 ns Diode Stored Charge (IF = 3 A, V = 3 V, di/dt = A/µs) Qrr 7 9 nc Thermal Resistance IGBT (Each Die) RθJC 1.2 C/W Thermal Resistance Free-Wheeling Diode (Each Die) RθJC 2.7 C/W (2) 1. ms = 1.% duty cycle MHPM7B3A6B 2 Беларусь г.минск тел./факс 8(17) e:mail minsk17@tut.by

3 Беларусь г.минск тел./факс 8(17) электронные компоненты радиодетали e:mail ELECTRICAL CHARACTERISTICS (continued) (TJ = unless otherwise noted) Characteristic Symbol Min Typ Max Unit BRAKE CIRCUIT Gate-Emitter Leakage Current (VCE = V, VGE = ± 2 V) IGES ± 2 µa Collector-Emitter Leakage Current (VCE = 6 V, VGE = V) TJ = ICES 2. µa ma Gate-Emitter Threshold Voltage (VCE = VGE, IC = 1. ma) VGE(th) V Collector-Emitter Breakdown Voltage (IC = ma, VGE = ) V(BR)CES 6 7 V Collector-Emitter Saturation Voltage (, IC = 3 A) VCE(SAT) V Input Capacitance (VGE = V, VCE = V, f = 1. MHz) Cies 66 pf Input Gate Charge (VCE = 3 V, IC = 3 A, ) QT 22 nc Fall Time Inductive Load (VCE = 3 V, IC = 3 A,, RG = 1 Ω) Turn-On Energy (VCE = 3 V, IC = 3 A,, RG = 1 Ω) Turn-Off Energy (VCE = 3 V, IC = 3 A,, RG = 1 Ω) tfi E(on) E(off) 3 ns 2. mj 2. mj Diode Forward Voltage (IF = 3 A) VF V Diode Reverse Leakage Current IR µa Thermal Resistance IGBT RθJC 1.2 C/W Thermal Resistance Diode RθJC 2.7 C/W MHPM7B3A6B 3 Беларусь г.минск тел./факс 8(17) e:mail minsk17@tut.by

4 Беларусь г.минск тел./факс 8(17) электронные компоненты радиодетали e:mail R S T N1 B 21 Q7 1 G7 N2 6 = PIN NUMBER IDENTIFICATION 1 7 P1 P2 Q1 Q3 Q G1 E1 8 D G3 E3 D3 G E D U 2 V 19 W 18 Q2 Q4 Q D2 D4 D6 G2 G4 G6 NC 2 DEVICE INTEGRATION NC NC NC 3 4 These pins are physical terminations but not connected internally. 3Phase Input Rectifier Bridge Brake IGBT/ Diode 3Phase Output IGBT/Diode Bridge Figure 1. Integrated Power Stage Schematic MHPM7B3A6B 4 Беларусь г.минск тел./факс 8(17) e:mail minsk17@tut.by

5 Беларусь г.минск тел./факс 8(17) электронные компоненты радиодетали e:mail Typical Characteristics 4 TJ = VGE = 18 V 9 V 4 VGE = 18 V 9 V V 12 V V 12 V VCE, COLLECTOREMITTER VOLTAGE (V) Figure 2. Output Inverter Collector Current IC versus CollectorEmitter Voltage VCE VCE, COLLECTOREMITTER VOLTAGE (V) Figure 3. Output Inverter Collector Current IC versus CollectorEmitter Voltage VCE VCE, COLLECTOREMITTER VOLTAGE (V) IC = 1 A 3 A 6 A TJ = VCE = 3 V RG = Ω TJ = t(off) td tf 8 VGE, GATEEMITTER VOLTAGE (V) 3 Figure 4. Inverter CollectorEmitter Voltage VCE versus GateEmitter Voltage VGE Figure. Inverter Switching Time td, tf, t(off) versus Collector Current IC VCE = 3 V RG = Ω tf td t(off) VCE = 3 V IC = 3 A TJ = t(off) td tf Figure 6. Inverter Switching Time td, tf, t(off) versus Collector Current IC RG, GATE RESISTANCE (Ω) Figure 7. Inverter Switching Time td, tf, t(off) versus Gate Resistance RG MHPM7B3A6B Беларусь г.минск тел./факс 8(17) e:mail minsk17@tut.by

6 Беларусь г.минск тел./факс 8(17) электронные компоненты радиодетали e:mail Typical Characteristics VCE = 3 V IC = 3 A t(off) td VCE = 3 V RG = Ω tf RG, GATE RESISTANCE (Ω) Figure 8. Inverter Switching Time td, tf, t(off) versus Gate Resistance RG Figure 9. Inverter Switching Time tr versus Collector Current IC VCE = 3 V IC = 3 A SWITCHING ENERGY ( µ J) VCE = 3 V RG = Ω RG, GATE RESISTANCE (Ω) Figure. Inverter Switching Time tr versus Gate Resistance RG Figure 11. Inverter Switching Energy E(off) versus Collector Current IC SWITCHING ENERGY ( µ J) VCE = 3 V IC = 3 A RG, GATE RESISTANCE (Ω) VCE, COLLECTOREMITTER VOLTAGE (V) V 2 V 4 V QG, GATE CHARGE (nc) V GE, GATEEMITTER VOLTAGE (V) Figure 12. Inverter Switching Energy E(off) versus Gate Resistance RG Figure 13. GatetoEmitter Voltage versus Gate Charge MHPM7B3A6B 6 Беларусь г.минск тел./факс 8(17) e:mail minsk17@tut.by

7 Беларусь г.минск тел./факс 8(17) электронные компоненты радиодетали e:mail Typical Characteristics 4 CAPACITANCE (pf) Cies Coes IF, FORWARD CURRENT (A) Cres VCE, COLLECTOREMITTER VOLTAGE (V) VF, FORWARD VOLTAGE (V) Figure 14. Output Inverter Capacitance versus Collector Voltage VCE Figure 1. Input Bridge Forward Current IF versus Forward Voltage VF IF, FORWARD CURRENT (A) PEAK REVERSE RECOVERY CURRENT Irr (A) REVERSE RECOVERY TIME trr (ns) trr Irr di/dt = A/µs VF, FORWARD VOLTAGE (V) IF, FORWARD CURRENT (A) Figure 16. Output Inverter Forward Current IF versus Forward Voltage VF Figure 17. Output Inverter Reverse Recovery trr, Irr versus Forward Current IF 1 + VGE = V RG = 1 Ω TJ = VCE, COLLECTOREMITTER VOLTAGE (V) Figure 18. Output Inverter Reversed Biased Safe Operating Area r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) IGBT DIODE.1 t, TIME (ms) Figure 19. Transient Thermal Resistance MHPM7B3A6B 7 Беларусь г.минск тел./факс 8(17) e:mail minsk17@tut.by

8 Беларусь г.минск тел./факс 8(17) электронные компоненты радиодетали e:mail PACKAGE DIMENSIONS E C K AB AC AD AE AF 3 PL AA 9 PL A W 2 PL N 1 G AH 2 PL 17 Q 2 PL V L M S R B DETAIL Z Y 4 PL H 7 PL 18 AG P U F D DETAIL Z J PL STYLE 1: PIN 1. P1 PIN 6. N2 PIN 11. G3 PIN 16. G2 PIN 21. B 2. T 7. P2 12. K 17. G4 22. T 3. T+ 8. K1 13. G 18. W 23. S 4. I+ 9. G1 14. G6 19. V 24. R. I. K3 1. G7 2. U. N1 CASE 44A1 ISSUE O X 4 PL NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.M, CONTROLLING DIMENSION: MILLIMETER. 3. LEAD LOCATION DIMENSIONS (ie: M, G, AA...) ARE TO THE CENTER OF THE LEAD. T MILLIMETERS INCHES DIM MIN MAX MIN MAX A B C D E F G H J K L M N P Q R S T U V W X Y AA AB AC AD AE AF AG AH.8.2 MHPM7B3A6B 8 Беларусь г.минск тел./факс 8(17) e:mail minsk17@tut.by

9 Беларусь г.минск тел./факс 8(17) электронные компоненты радиодетали e:mail Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Typical parameters can and do vary in different applications. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. MHPM7B3A6B 9 Беларусь г.минск тел./факс 8(17) e:mail minsk17@tut.by

10 Беларусь г.минск тел./факс 8(17) электронные компоненты радиодетали e:mail How to reach us: USA/EUROPE: Motorola Literature Distribution; JAPAN: Nippon Motorola Ltd.; TatsumiSPDJLDC, Toshikatsu Otsuki, P.O. Box 2912; Phoenix, Arizona F SeibuButsuryuCenter, 3142 Tatsumi KotoKu, Tokyo 13, Japan MFAX: TOUCHTONE (62) HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, INTERNET: 1 Ting Kok Road, Tai Po, N.T., Hong Kong MHPM7B3A6B CODELINE TO BE PLACED HERE MHPM7B3A6B/D Беларусь г.минск тел./факс 8(17) e:mail minsk17@tut.by

For Isolated Package Applications

SEMONDUCTOR TECHNAL DATA Order this document by BUT11AF/D For Isolated Package Applications The BUT11AF was designed for use in line operated switching power supplies in a wide range of end use applications.