MC3456 DUAL TIMING CIRCUIT

Save this PDF as:
 WORD  PNG  TXT  JPG

Size: px
Start display at page:

Download "MC3456 DUAL TIMING CIRCUIT"

Transcription

1 Order this document by /D The dual timing circuit is a highly stable controller capable of producing accurate time delays, or oscillation. Additional terminals are provided for triggering or resetting if desired. In the time delay mode of operation, the time is precisely controlled by one external resistor and capacitor per timer. For astable operation as an oscillator, the free running frequency and the duty cycle are both accurately controlled with two external resistors and one capacitor per timer. The circuit may be triggered and reset on falling waveforms, and the output structure can source or sink up to 2 ma or drive MTTL circuits. Direct Replacement for NE6/SE6 Timers Timing from Microseconds through Hours Operates in Both Astable and Monostable Modes Adjustable Duty Cycle High Current can Source or Sink 2 ma can Drive MTTL Temperature Stability of.% per C Normally On or Normally Off Dual Version of the Popular MC4 Timer DUAL TIMING CIRCUIT P SUFFIX PLASTIC PACKAGE CASE 646 SEMICONDUCTOR TECHNICAL DATA PIN CONNECTIONS D SUFFIX PLASTIC PACKAGE CASE (SO4) Figure. 22 Second Solid State Time Delay Relay Circuit k µf Figure 3. General Test Circuit Test circuit for measuring DC parameters (to set output and measure parameters): a) When V S 2/3, V O is low. b) When V S /3, V O is high. c) When V O is low, Pin sinks current. To test for, set V O high, c) apply voltage, and test for current flowing into Pin. When c) is not in use, it should be tied to. k MOTOROLA ANALOG IC DEVICE DATA 4 2 t =.; R and C = 22 sec Time delay (t) is variable by changing R and C (see Figure 6). + V O µf C MT2 2 M G MT N44 V R I CC 4 8 Voltage 3 I Sink I Source R Load V N43 6 I th 2. k V S 2 3. k 2 V µf + Vac/6 Hz 2 (2) 3 () Voltage 6 (8) A A A VCC 3 B 2 B A 4 B A B A B B Device P NE6D (Top View) ORDERING INFORMATION Operating Temperature Range to + C Package Plastic DIP SO4 Figure 2. Block Diagram ( Shown) k k k 4 + Comp A + Comp B R S Flip Flop Q Inhibit/ 4 () (3) (9) Motorola, Inc. 996 Rev 2

2 MAXIMUM RATINGS (TA = +, unless otherwise noted.) Rating Symbol Value Unit Power Supply Voltage +8 Vdc Current I dis 2 ma Power Dissipation (Package Limitation) P Suffix, Plastic Package, Case 646 Derate above T A = + D Suffix, Plastic Package, Case Derate above T A = + P D mw mw/ C W mw/ C Operating Ambient Temperature Range T A to + C Storage Temperature Range T stg 6 to + C ELECTRICAL CHARACTERISTICS (TA = +, VCC = + V, unless otherwise noted.) Characteristics Symbol Min Typ Max Unit Supply Voltage 4. 6 V Supply Current =. V, R L = = V, R L = Low State, (Note ) I CC ma Timing Error (Note 2) Monostable Mode (R A = 2. kω; C = µf) Initial Accuracy Drift with Temperature Drift with Supply Voltage Astable Mode (R A = R B = 2. kω to kω; C = ) Initial Accuracy Drift with Temperature Drift with Supply Voltage % PPM/ C %/V % PPM/ C %/V Voltage V th 2/3 x Voltage V T V = V =. V..6 Current I T. µa Voltage V R.4. V Current I R ma Current (Note 3) I th.3 µa Voltage Level V CL V = V =. V Voltage Low ( = V) I Sink = ma I Sink = ma I Sink = ma I Sink = 2 ma ( =. V) I Sink =. ma Voltage High (I Source = 2 ma) = V (I Source = ma) = V =. V Toggle Rate R A = 3.3 kω, R B = 6.8 kω, C =.3 µf (Figure, 9) khz Leakage Current I dis 2 na Rise Time of t OLH ns Fall Time of t OHL ns Matching Characteristics Between Sections Monostable Mode Initial Timing Accuracy Timing Drift with Temperature Drift with Supply Voltage V OL V OH NOTES:. Supply current is typically ma less for each output which is high. 2. Tested at =. V and = V. 3. This will determine the maximum value of R A + R B for V operation. The maximum total R = 2 mω ± V V % ppm/ C %/V 2 MOTOROLA ANALOG IC DEVICE DATA

3 Figure 4. Pulse Width Figure. Supply Current PW, PULSE WIDTH (ns MIN) 2 2 C C I CC, SUPPLY CURRENT (ma) VT (min), MINIMUM TRIGGER VOLTAGE (X VCC = Vdc).4. VCC, SUPPLY VOLTAGE (Vdc) 2. Figure 6. High Voltage Figure. Low Voltage VCC =. Vdc).8 V OH (Vdc) V VCC V V OL, (Vdc) ISource (ma) ISink (ma) Figure 8. Low Voltage VCC = Vdc) Figure 9. Low Voltage VCC = Vdc) V OL, (Vdc) V OL, (Vdc) ISink (ma) ISink (ma) MOTOROLA ANALOG IC DEVICE DATA 3

4 Figure. Delay Time versus Supply Voltage Figure. Delay Time versus Temperature td, DELAY TIME NORMALIZED td, DELAY TIME NORMALIZED VCC, SUPPLY VOLTAGE (Vdc) TA, AMBIENT TEMPERATURE ( C) Figure 2. Propagation Delay versus Voltage 3 tpd, PROPAGATION DELAY TIME (ns) 2 2 C C VT (min), MINIMUM TRIGGER VOLTAGE (x VCC = Vdc) 4 MOTOROLA ANALOG IC DEVICE DATA

5 Figure 3. Representative Circuit Schematic Voltage VCC Comparator Comparator FlipFlop 4. k k k 6.8 k. k. k 3.9 k k c b. k e 4. k c b 22 k. k 4. k GENERAL OPERATION The is a dual timing circuit which uses as its timing elements an external resistor/capacitor network. It can be used in both the monostable (one shot) and astable modes with frequency and duty cycle, controlled by the capacitor and resistor values. While the timing is dependent upon the external passive components, the monolithic circuit provides the starting circuit, voltage comparison and other functions needed for a complete timing circuit. Internal to the integrated circuit are two comparators, one for the input signal and the other for capacitor voltage; also a flipflop and digital output are included. The comparator reference voltages are always a fixed ratio of the supply voltage thus providing output timing independent of supply voltage. Monostable Mode In the monostable mode, a capacitor and a single resistor are used for the timing network. Both the threshold terminal and the discharge transistor terminal are connected together in this mode (refer to circuit Figure ). When the input voltage to the trigger comparator falls below /3 VCC the comparator output triggers the flipflop so that it s output sets low. This turns the capacitor discharge transistor off and drives the digital output to the high state. This condition allows the capacitor to charge at an exponential rate which is set by the RC time constant. When the capacitor voltage reaches 2/3 VCC the threshold comparator resets the flipflop. This action discharges the timing capacitor and returns the digital output to the low state. Once the flipflop has been triggered by an input signal, it cannot be retriggered until the present timing period has been completed. The time that the output is high is given by the equation t =. RA C. Various combinations of R and C and their associated times are shown in Figure 4. The trigger pulse width must be less than the timing period. A reset pin is provided to discharge the capacitor thus interrupting the timing cycle. As long as the reset pin is low, the capacitor discharge transistor is turned on and prevents the capacitor from charging. While the reset voltage is applied the digital output will remain the same. The reset pin should be tied to the supply voltage when not in use. C, CAPACITANCE ( µ F). Figure 4. Time Delay. µs µs ms ms ms td, TIME DELAY (s) MOTOROLA ANALOG IC DEVICE DATA

6 Figure. Monostable Circuit + (. V to V) Figure 6. Monostable Waveforms R L R L (9) 6 (8) 4 () Pin numbers in parenthesis ( ) indicate BChannel 4 (3) 2 (2) 3 () Voltage R A C t = µs/cm (R A = kω, C =, R L = kω, = V) Figure. Astable Circuit + (. to V) Figure 8. Astable Waveforms R L 4 () 4 R A (3) R L (9) 6 (8) 2 (2) 3 () Voltage R B C t = 2 µs/cm (R A =. kω, C =. µf, R L = kω, R B = 3.9 kω, = V) Astable Mode In the astable mode the timer is connected so that it will retrigger itself and cause the capacitor voltage to oscillate between /3 VCC and 2/3 VCC (see Figure ). The external capacitor charges to 2/3 VCC through RA and RB and discharges to /3 VCC through RB. By varying the ratio of these resistors the duty cycle can be varied. The charge and discharge times are independent of the supply voltage. The charge time (output high) is given by: t =.69 (RA+RB) C The discharge time (output low) by: t2 =.69 (RB) C Thus the total period is given by: T = t + t2 =.69 (RA + 2RB) C The frequency of oscillation is then: f = T =.44 (RA +2RB) C and may be easily found as shown in Figure 9. The duty cycle is given by: DC = RB RA +2RB To obtain the maximum duty cycle, RA must be as small as possible; but it must also be large enough to limit the discharge current (Pin current) within the maximum rating of the discharge transistor (2 ma). The minimum value of RA is given by: C, CAPACITANCE ( µ F). RA (Vdc) I (A) (Vdc).2 Figure 9. Free Running Frequency (RA + 2 RB). k k k f, FREE RUNNING FREQUENCY (Hz) 6 MOTOROLA ANALOG IC DEVICE DATA

7 Tone Burst Generator For a tone burst generator, the first timer is used as a monostable and determines the tone duration when triggered by a positive pulse at Pin 6. The second timer is enabled by the high output of the monostable. It is connected as an astable and determines the frequency of the tone. APPLICATIONS INFORMATION Dual Astable Multivibrator This dual astable multivibrator provides versatility not available with single timer circuits. The duty cycle can be adjusted from % to 9%. The two outputs provide two phase clock signals often required in digital systems. It can also be inhibited by use of either reset terminal. Figure 2. Tone Burst Generator R T 4 4 R A + V R B C. mf C2 t =. R T C f =.44 (R A + 2R B ) C Figure 2. Dual Astable Multivibrator + V R 4 4 k N94 N94 k R C Voltage 3 Voltage C2 f =.9 R2 (R + R2) C for C = C2 Duty Cycle R + R2 MOTOROLA ANALOG IC DEVICE DATA

8 Pulse Width Modulation If the timer is triggered with a continuous pulse train in the monostable mode of operation, the charge time of the capacitor can be varied by changing the control voltage at Pin 3. In this manner, the output pulse width can be modulated by applying a modulating signal that controls the threshold voltage. Test Sequences Several timers can be connected to drive each other for sequential timing. An example is shown in Figure 24 where the sequence is started by triggering the first timer which runs for ms. The output then switches low momentarily and starts the second timer which runs for ms and so forth. Figure 22. Pulse Width Modulation Waveforms Figure 23. Pulse Width Modulation Circuit + (. V to V) Modulation Input Voltage. V/cm Clock Input Voltage. V/cm Voltage. V/cm Capacitor Voltage. V/cm R L 4 () 4 (9) Clock 6 (8) Input (3) 2 (2) 3 () R A Modulation Input C t =. ms/cm (RA = kw, C =.2 mf, VCC = V) Figure 24. Sequential Timing Circuit (. V to V) 9. k 2 k 9. k 2 k k. µf. µf µf. µf. µf Load Load Load 8 MOTOROLA ANALOG IC DEVICE DATA

9 4 8 A F H G D N B SEATING PLANE C K OUTLINE DIMENSIONS P SUFFIX PLASTIC PACKAGE CASE 6466 ISSUE L L M J NOTES:. LEADS WITHIN 3 (.) RADIUS OF TRUE POSITION AT SEATING PLANE AT MAXIMUM MATERIAL CONDITION. 2. DIMENSION L TO CENTER OF LEADS WHEN FORMED PARALLEL. 3. DIMENSION B DOES NOT INCLUDE MOLD FLASH. 4. ROUNDED CORNERS OPTIONAL. INCHES MILLIMETERS DIM MIN MAX MIN MAX A B C D F G. BSC 2.4 BSC H J K L.3 BSC.62 BSC M N A 4 B 4X P.2 (.) M B M D SUFFIX PLASTIC PACKAGE CASE (SO4) ISSUE N NOTES:. DIMENSIONING AND TOLERANCING PER ANSI Y4.M, CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSIONS A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION (.6) PER SIDE.. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 2 (.) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. T G 8X D K C SEATING PLANE.2 (.) M T B S A S M R X 4 J F MILLIMETERS INCHES DIM MIN MAX MIN MAX A B C D F G.2 BSC. BSC J K M P R MOTOROLA ANALOG IC DEVICE DATA 9

10 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Typical parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. How to reach us: USA / EUROPE / Locations Not Listed: Motorola Literature Distribution; JAPAN: Nippon Motorola Ltd.; TatsumiSPDJLDC, 6F SeibuButsuryuCenter, P.O. Box 292; Phoenix, Arizona or Tatsumi KotoKu, Tokyo 3, Japan MFAX: TOUCHTONE ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, INTERNET: Ting Kok Road, Tai Po, N.T., Hong Kong MOTOROLA ANALOG IC DEVICE /D DATA

LOW POWER FM IF SEMICONDUCTOR TECHNICAL DATA PIN CONNECTIONS. Figure 1. Representative Block Diagram ORDERING INFORMATION

LOW POWER FM IF SEMICONDUCTOR TECHNICAL DATA PIN CONNECTIONS. Figure 1. Representative Block Diagram ORDERING INFORMATION Order this document by MC7/D... includes Oscillator, Mixer, Limiting Amplifier, Quadrature Discriminator, Active, Squelch, Scan Control, and Mute Switch. The MC7 is designed for use in FM dual conversion

More information

MC1488 QUAD MDTL LINE DRIVER EIA 232D

MC1488 QUAD MDTL LINE DRIVER EIA 232D Order this document by MC/D The MC is a monolithic quad line driver designed to interface data terminal equipment with data communications equipment in conformance with the specifications of EIA Standard

More information

STEPPER MOTOR DRIVER SEMICONDUCTOR TECHNICAL DATA PIN CONNECTIONS. Figure 1. Representative Block Diagram ORDERING INFORMATION

STEPPER MOTOR DRIVER SEMICONDUCTOR TECHNICAL DATA PIN CONNECTIONS. Figure 1. Representative Block Diagram ORDERING INFORMATION Order this document by SAA4/D The SAA4 drives a two phase stepper motor in the bipolar mode. The device contains three input stages, a logic section and two output stages. The IC is contained in a pin

More information

Freescale Semiconductor, I

Freescale Semiconductor, I nc. Order this document by MC3393/D The MC3393 is a new generation industry standard UAA04 Flasher. It has been developed for enhanced EMI sensitivity, system reliability, and improved wiring simplification.

More information

ARCHIVE INFORMATION LOW POWER NARROWBAND FM IF

ARCHIVE INFORMATION LOW POWER NARROWBAND FM IF Order this document by MC6C/D The MC6C includes an Oscillator, Mixer, Limiting Amplifier, Quadrature Discriminator, Active Filter, Squelch, Scan Control and Mute Switch. This device is designed for use

More information

TIP120, TIP121, TIP122,

TIP120, TIP121, TIP122, SEMICONDUCTOR TECHNICAL DATA Order this document by TIP120/D... designed for general purpose amplifier and low speed switching applications. High DC Current Gain hfe = 2500 (Typ) @ IC = 4.0 Adc Collector

More information

PRODUCT DATASHEET. is brought to you by. SOS electronic distribution of electronic components

PRODUCT DATASHEET. is brought to you by. SOS electronic distribution of electronic components PRODUCT DATASHEET is brought to you by SOS electronic distribution of electronic components Click to view availability, pricing and lifecycle information. Visit https://www.soselectronic.com/ Datasheet

More information

NPN Silicon SEMICONDUCTOR TECHNICAL DATA MAXIMUM RATINGS THERMAL CHARACTERISTICS. ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted)

NPN Silicon SEMICONDUCTOR TECHNICAL DATA MAXIMUM RATINGS THERMAL CHARACTERISTICS. ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted) SEMICONDUCTOR TECHNICAL DATA Order this document by /D NPN Silicon COLLECTOR 2 BASE 3 EMITTER MAXIMUM RATINGS Rating Symbol BC 546 BC 547 BC 548 Unit Collector Emitter oltage CEO 65 45 3 dc Collector Base

More information

2N2369 2N2369A. NPN Silicon SEMICONDUCTOR TECHNICAL DATA MAXIMUM RATINGS THERMAL CHARACTERISTICS

2N2369 2N2369A. NPN Silicon SEMICONDUCTOR TECHNICAL DATA MAXIMUM RATINGS THERMAL CHARACTERISTICS SEMICONDUCTOR TECHNICAL DATA Order this document by N69/D NPN Silicon COLLECTOR *Motorola Preferred Device BASE EMITTER MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage VCEO 5 Vdc Collector

More information

HIGH PERFORMANCE VOLTAGE COMPARATORS

HIGH PERFORMANCE VOLTAGE COMPARATORS Order this document by LM/D The ability to operate from a single power supply of. V to V or ± V split supplies, as commonly used with operational amplifiers, makes the LM/LM a truly versatile comparator.

More information

COLLECTOR BASE EMITTER BC 557 BC556. mw mw/ C PD PD Characteristic Symbol Min Typ Max Unit V(BR)CEO BC557 BC558 V(BR)CBO BC557 BC558

COLLECTOR BASE EMITTER BC 557 BC556. mw mw/ C PD PD Characteristic Symbol Min Typ Max Unit V(BR)CEO BC557 BC558 V(BR)CBO BC557 BC558 SEMICONDUCTOR TECHNICAL DATA Order this document by /D PNP Silicon COLLECTOR 2 BASE 3 EMITTER MAXIMUM RATINGS Rating Symbol BC 556 BC 557 BC 558 Unit Collector Emitter oltage CEO 65 45 3 dc Collector Base

More information

Amplifiers JFET INPUT OPERATIONAL AMPLIFIERS

Amplifiers JFET INPUT OPERATIONAL AMPLIFIERS Order this document by TLC/D These lowcost JFET input operational amplifiers combine two stateof theart linear technologies on a single monolithic integrated circuit. Each internally compensated operational

More information

SEMICONDUCTOR TECHNICAL DATA

SEMICONDUCTOR TECHNICAL DATA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N355/D... designed for general purpose switching and amplifier applications. DC Current Gain hfe = 7 @ IC = 4 Adc Collector Emitter Saturation Voltage

More information

COLLECTOR BASE EMITTER. mw mw/ C PD PD Watt. Characteristic Symbol Min Typ Max Unit V(BR)CEO BC338 V(BR)CES BC338. V(BR)EBO 5.

COLLECTOR BASE EMITTER. mw mw/ C PD PD Watt. Characteristic Symbol Min Typ Max Unit V(BR)CEO BC338 V(BR)CES BC338. V(BR)EBO 5. SEMICONDUCTOR TECHNICAL DATA Order this document by /D NPN Silicon COLLECTOR 2 BASE EMITTER MAXIMUM RATINGS Rating Symbol Unit Collector Emitter Voltage VCEO 45 25 Vdc Collector Base Voltage VCBO 5 Vdc

More information

CMOS Micro-Power Comparator plus Voltage Follower

CMOS Micro-Power Comparator plus Voltage Follower Freescale Semiconductor Technical Data Rev 2, 05/2005 CMOS Micro-Power Comparator plus Voltage Follower The is an analog building block consisting of a very-high input impedance comparator. The voltage

More information

Watts W/ C Storage Temperature Range Tstg 65 to +150 C Operating Junction Temperature TJ 200 C

Watts W/ C Storage Temperature Range Tstg 65 to +150 C Operating Junction Temperature TJ 200 C SEMICONDUCTOR TECHNICAL DATA Order this document by MRF184/D The RF MOSFET Line N Channel Enhancement Mode Lateral MOSFETs Designed for broadband commercial and industrial applications at frequencies to

More information

PD Characteristic Symbol Max Unit Thermal Resistance, Junction to Case RθJC 25 C/W. Characteristic Symbol Min Typ Max Unit.

PD Characteristic Symbol Max Unit Thermal Resistance, Junction to Case RθJC 25 C/W. Characteristic Symbol Min Typ Max Unit. SEMICONDUCTOR TECHNICAL DATA Order this document by /D The RF Line Designed primarily for wideband large signal predriver stages in the UHF frequency range. Specified @.5 V, 7 MHz Characteristics @ Pout

More information

SUBCARRIER PHASE LOCKED LOOP

SUBCARRIER PHASE LOCKED LOOP Order this document by C/D The C is a gated phaselocked loop intended for, but not restricted to, video applications. The integrated circuit contains a gated phase detector, voltage controlled crystal

More information

MC34119 LOW POWER AUDIO AMPLIFIER

MC34119 LOW POWER AUDIO AMPLIFIER Order this document by MC349/D The MC349 is a low power audio amplifier intergrated circuit intended (primarily) for telephone applications, such as in speakerphones. It provides differential speaker outputs

More information

SN54/74LS195A UNIVERSAL 4-BIT SHIFT REGISTER UNIVERSAL 4-BIT SHIFT REGISTER FAST AND LS TTL DATA 5-366

SN54/74LS195A UNIVERSAL 4-BIT SHIFT REGISTER UNIVERSAL 4-BIT SHIFT REGISTER FAST AND LS TTL DATA 5-366 UNIVERSAL 4-BIT SHIFT REGISTER The SN54 / 74LS95A is a high speed 4-Bit Shift Register offering typical shift frequencies of 39 MHz. It is useful for a wide variety of register and counting applications.

More information

ARCHIVE INFORMATION MMBR951 MRF957. Freescale Semiconductor, I. The RF Line SEMICONDUCTOR TECHNICAL DATA

ARCHIVE INFORMATION MMBR951 MRF957. Freescale Semiconductor, I. The RF Line SEMICONDUCTOR TECHNICAL DATA nc. SEMICONDUCTOR TECHNICAL DATA Order this document by MMBR9/D The RF Line Designed for use in high gain, low noise small signal amplifiers. This series features excellent broadband linearity and is offered

More information

MPSL51. Amplifier Transistor PNP Silicon MAXIMUM RATINGS. THERMAL CHARACTERISTICS

MPSL51. Amplifier Transistor PNP Silicon MAXIMUM RATINGS.  THERMAL CHARACTERISTICS Amplifier Transistor PNP Silicon MAXIMUM RATINGS Rating Symbol alue Unit Collector Emitter oltage CEO dc Collector Base oltage CBO dc Emitter Base oltage EBO 4. dc Collector Current Continuous I C 6 madc

More information

N Channel Depletion SEMICONDUCTOR TECHNICAL DATA MAXIMUM RATINGS. ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted) OFF CHARACTERISTICS

N Channel Depletion SEMICONDUCTOR TECHNICAL DATA MAXIMUM RATINGS. ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted) OFF CHARACTERISTICS SEMICONDUCTOR TECHNICAL DATA Order this document by MPF2/D N Channel Depletion 1 DRAIN 3 GATE MAXIMUM RATINGS Rating Symbol Value Unit Drain Source Voltage VDS 25 Vdc Drain Gate Voltage VDG 25 Vdc Gate

More information

Advance Information MC MOTOROLA. EIA 232 E and CCITT V.28 SEMICONDUCTOR TECHNICAL DATA

Advance Information MC MOTOROLA. EIA 232 E and CCITT V.28 SEMICONDUCTOR TECHNICAL DATA SEMICONDUCTOR TECHNICAL DATA Order this document by /D Advance Information EIA E and CCITT. The is a silicon gate CMOS IC that combines three drivers and three receivers to fulfill the electrical specifications

More information

NSTB1002DXV5T1G, NSTB1002DXV5T5G

NSTB1002DXV5T1G, NSTB1002DXV5T5G NSTB002DXV5TG, NSTB002DXV5T5G Preferred Devices Dual Common BaseCollector Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor

More information

ELECTRICAL CHARACTERISTICS continued (T C = 25 C unless otherwise noted) Characteristic Symbol Min Typ Max Unit ON CHARACTERISTICS DC Current Gain (I

ELECTRICAL CHARACTERISTICS continued (T C = 25 C unless otherwise noted) Characteristic Symbol Min Typ Max Unit ON CHARACTERISTICS DC Current Gain (I SEMICONDUCTOR TECHNICAL DATA Order this document by /D The RF Line The is designed for output stages in band IV and V TV transmitter amplifiers. It incorporates high value emitter ballast resistors, gold

More information

SEMICONDUCTOR TECHNICAL DATA

SEMICONDUCTOR TECHNICAL DATA SEMICONDUCTOR TECHNICAL DATA Order this document by BUH/D The BUH has an application specific state of art die designed for use in Watts HALOGEN electronic transformers and switchmode applications. This

More information

ARCHIVE INFORMATION. Cellular Band RF Linear LDMOS Amplifier MHL9838. Freescale Semiconductor. Technical Data MHL9838. Rev.

ARCHIVE INFORMATION. Cellular Band RF Linear LDMOS Amplifier MHL9838. Freescale Semiconductor. Technical Data MHL9838. Rev. Technical Data Rev. 4, 1/2005 Replaced by N. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead-free terminations. Cellular

More information

ARCHIVE INFORMATION. Cellular Band RF Linear LDMOS Amplifier MHL9236MN. Freescale Semiconductor. Technical Data

ARCHIVE INFORMATION. Cellular Band RF Linear LDMOS Amplifier MHL9236MN. Freescale Semiconductor. Technical Data Technical Data Cellular Band RF Linear LDMOS Amplifier Designed for ultra- linear amplifier applications in ohm systems operating in the cellular frequency band. A silicon FET Class A design provides outstanding

More information

NTMD4184PFR2G. Power MOSFET and Schottky Diode -30 V, -4.0 A, Single P-Channel with 20 V, 2.2 A, Schottky Barrier Diode Features

NTMD4184PFR2G. Power MOSFET and Schottky Diode -30 V, -4.0 A, Single P-Channel with 20 V, 2.2 A, Schottky Barrier Diode Features NTMDPF Power MOSFET and Schottky Diode -3 V, -. A, Single P-Channel with V,. A, Schottky Barrier Diode Features FETKY Surface Mount Package Saves Board Space Independent Pin-Out for MOSFET and Schottky

More information

MARKING DIAGRAMS Figure 1. Logic Diagram ORDERING INFORMATION Figure 2. Dip Pin Assignment CDIP 16 L SUFFIX CASE 620A

MARKING DIAGRAMS Figure 1. Logic Diagram ORDERING INFORMATION Figure 2. Dip Pin Assignment CDIP 16 L SUFFIX CASE 620A The MC0H6 is a functional/pinout duplication of the MC06, with 00% improvement in propagation delay and no increase in power supply current. Propagation Delay,.0 ns Typical Power Dissipation 85 mw Typ/Pkg

More information

Distributed by: www.jameco.com 1-800-831-4242 The content and copyrights of the attached material are the property of its owner. Preferred Device Small Signal MOSFET 500 ma, 60 Volts N Channel Features

More information

NSVEMD4DXV6T5G. Dual Bias Resistor Transistors. NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network

NSVEMD4DXV6T5G. Dual Bias Resistor Transistors. NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network Dual Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias

More information

Distributed by: www.jameco.com 1-800-831-4242 The content and copyrights of the attached material are the property of its owner. LM555 Timer General Description The LM555 is a highly stable device for

More information

NTMD4820NR2G. Power MOSFET 30 V, 8 A, Dual N Channel, SOIC 8

NTMD4820NR2G. Power MOSFET 30 V, 8 A, Dual N Channel, SOIC 8 NTMDN Power MOSFET V, A, Dual N Channel, SOIC Features Low R DS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Dual SOIC

More information

ELECTRICAL CHARACTERISTICS continued (T C = 25 C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Emitter Base Break

ELECTRICAL CHARACTERISTICS continued (T C = 25 C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Emitter Base Break SEMICONDUCTOR TECHNICAL DATA Order this document by /D The RF Sub Micron Bipolar Line Designed for broadband commercial and industrial applications at frequencies from 1800 to 2000 MHz. The high gain and

More information

MMSZ2V4T1 Series. Zener Voltage Regulators. 500 mw SOD 123 Surface Mount

MMSZ2V4T1 Series. Zener Voltage Regulators. 500 mw SOD 123 Surface Mount MMSZVT Series Zener Voltage Regulators 5 mw SOD 3 Surface Mount Three complete series of Zener diodes are offered in the convenient, surface mount plastic SOD 3 package. These devices provide a convenient

More information

NTMD4840NR2G. Power MOSFET 30 V, 7.5 A, Dual N Channel, SOIC 8

NTMD4840NR2G. Power MOSFET 30 V, 7.5 A, Dual N Channel, SOIC 8 NTMDN Power MOSFET 3 V, 7. A, Dual N Channel, SOIC Features Low R DS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Dual

More information

MJD44H11 (NPN) MJD45H11 (PNP)

MJD44H11 (NPN) MJD45H11 (PNP) MJDH (NPN) MJD5H (PNP) Preferred Device Complementary Power Transistors For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such

More information

NCP304A. Voltage Detector Series

NCP304A. Voltage Detector Series Voltage Detector Series The NCP0A is a second generation ultralow current voltage detector. This device is specifically designed for use as a reset controller in portable microprocessor based systems where

More information

MJE13002 MJE13003 Unit

MJE13002 MJE13003 Unit SEMONDUCTOR TECHNAL DATA Order this document by MJE3/D These devices are designed for high voltage, high speed power switching inductive circuits where fall time is critical. They are particularly suited

More information

ELECTRICAL CHARACTERISTICS (T C = 25 C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS (1) Drain Source Breakdown V

ELECTRICAL CHARACTERISTICS (T C = 25 C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS (1) Drain Source Breakdown V SEMICONDUCTOR TECHNICAL DATA Order this document by /D The RF MOSFET Line N Channel Enhancement Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 800

More information

MBR20200CT. Switch mode Power Rectifier. Dual Schottky Rectifier SCHOTTKY BARRIER RECTIFIER 20 AMPERES, 200 VOLTS

MBR20200CT. Switch mode Power Rectifier. Dual Schottky Rectifier SCHOTTKY BARRIER RECTIFIER 20 AMPERES, 200 VOLTS MBRCT Switch mode Power Rectifier Dual Schottky Rectifier Features and Benefits Low Forward Voltage Low Power Loss/High Efficiency High Surge Capacity 75 C Operating Junction Temperature A Total ( A Per

More information

ASM1232LP/LPS 5V μp Power Supply Monitor and Reset Circuit

ASM1232LP/LPS 5V μp Power Supply Monitor and Reset Circuit 5V μp Power Supply Monitor and Reset Circuit General Description The ASM1232LP/LPS is a fully integrated microprocessor Supervisor. It can halt and restart a hung-up microprocessor, restart a microprocessor

More information

7WB Bit Bus Switch. The 7WB3126 is an advanced high speed low power 2 bit bus switch in ultra small footprints.

7WB Bit Bus Switch. The 7WB3126 is an advanced high speed low power 2 bit bus switch in ultra small footprints. 2-Bit Bus Switch The WB326 is an advanced high speed low power 2 bit bus switch in ultra small footprints. Features High Speed: t PD = 0.25 ns (Max) @ V CC = 4.5 V 3 Switch Connection Between 2 Ports Power

More information

SN54/74LS196 SN54/74LS197 4-STAGE PRESETTABLE RIPPLE COUNTERS 4-STAGE PRESETTABLE RIPPLE COUNTERS FAST AND LS TTL DATA 5-372

SN54/74LS196 SN54/74LS197 4-STAGE PRESETTABLE RIPPLE COUNTERS 4-STAGE PRESETTABLE RIPPLE COUNTERS FAST AND LS TTL DATA 5-372 4-STAGE PRESETTABLE RIPPLE COUNTERS The SN54/74LS196 decade counter is partitioned into divide-by-two and divide-by-five sectio which can be combined to count either in BCD (8, 4, 2, 1) sequence or in

More information

LOW POWER JFET INPUT OPERATIONAL AMPLIFIERS

LOW POWER JFET INPUT OPERATIONAL AMPLIFIERS These JFET input operational amplifiers are designed for low power applications. They feature high input impedance, low input bias current and low input offset current. Advanced design techniques allow

More information

MPSA44. High Voltage Transistor. NPN Silicon MAXIMUM RATINGS. MARKING DIAGRAM THERMAL CHARACTERISTICS ORDERING INFORMATION

MPSA44. High Voltage Transistor. NPN Silicon MAXIMUM RATINGS.  MARKING DIAGRAM THERMAL CHARACTERISTICS ORDERING INFORMATION Preferred Device High Voltage Transistor NPN Silicon MAXIMUM RATINGS Rating Symbol Value Unit CollectorEmitter Voltage V CEO 400 Vdc CollectorBase Voltage V CBO 500 Vdc EmitterBase Voltage V EBO 6.0 Vdc

More information

BS107, BS107A. Small Signal MOSFET 250 mamps, 200 Volts N Channel TO ma, 200 V R DS(on) = 14 (BS107) R DS(on) = 6.

BS107, BS107A. Small Signal MOSFET 250 mamps, 200 Volts N Channel TO ma, 200 V R DS(on) = 14 (BS107) R DS(on) = 6. Preferred Device Small Signal MOSFET 250 mamps, 200 Volts NChannel Features PbFree Package is Available* 250 ma, 200 V R DS(on) = 14 (BS107) R DS(on) = 6.4 (BS107A) MAXIMUM RATINGS Rating Symbol Value

More information

MPSA20. Amplifier Transistor. NPN Silicon. Pb Free Package is Available* Features. MAXIMUM RATINGS THERMAL CHARACTERISTICS

MPSA20. Amplifier Transistor. NPN Silicon. Pb Free Package is Available* Features.  MAXIMUM RATINGS THERMAL CHARACTERISTICS MPSA Amplifier Transistor NPN Silicon Features Pb Free Package is Available* MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V CEO 4 Vdc Collector Base Voltage V CBO 4. Vdc Collector

More information

MMUN2211LT1 Series. NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network

MMUN2211LT1 Series. NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network MMUNLT Series Preferred Devices Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single

More information

SEMICONDUCTOR TECHNICAL DATA

SEMICONDUCTOR TECHNICAL DATA SEMICONDUCTOR TECHNICAL DATA Order this document by MPX200/D The MPX200 series device is a silicon piezoresistive pressure sensors provide a very accurate and linear voltage output directly proportional

More information

EMC2DXV5T1G, EMC3DXV5T1G, EMC4DXV5T1G, EMC5DXV5T1G. Dual Common Base-Collector Bias Resistor Transistors

EMC2DXV5T1G, EMC3DXV5T1G, EMC4DXV5T1G, EMC5DXV5T1G. Dual Common Base-Collector Bias Resistor Transistors EMCDXV5TG, EMCDXV5TG, EMCDXV5TG, EMC5DXV5TG Dual Common Base-Collector Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor

More information

NVLJD4007NZTBG. Small Signal MOSFET. 30 V, 245 ma, Dual, N Channel, Gate ESD Protection, 2x2 WDFN Package

NVLJD4007NZTBG. Small Signal MOSFET. 30 V, 245 ma, Dual, N Channel, Gate ESD Protection, 2x2 WDFN Package NVLJD7NZ Small Signal MOSFET V, 2 ma, Dual, N Channel, Gate ESD Protection, 2x2 WDFN Package Features Optimized Layout for Excellent High Speed Signal Integrity Low Gate Charge for Fast Switching Small

More information

MUN5216DW1, NSBC143TDXV6. Dual NPN Bias Resistor Transistors R1 = 4.7 k, R2 = k. NPN Transistors with Monolithic Bias Resistor Network

MUN5216DW1, NSBC143TDXV6. Dual NPN Bias Resistor Transistors R1 = 4.7 k, R2 = k. NPN Transistors with Monolithic Bias Resistor Network MUN526DW, NSBC43TDXV6 Dual NPN Bias Resistor Transistors R = 4.7 k, R2 = k NPN Transistors with Monolithic Bias Resistor Network This series of digital transistors is designed to replace a single device

More information

LOW NOISE, JFET INPUT OPERATIONAL AMPLIFIERS

LOW NOISE, JFET INPUT OPERATIONAL AMPLIFIERS Order this document by TL7/D These low noise JFET input operational amplifiers combine two stateoftheart analog technologies on a single monolithic integrated circuit. Each internally compensated operational

More information

SN54/74LS390 SN54/74LS393 DUAL DECADE COUNTER; DUAL 4-STAGE BINARY COUNTER DUAL DECADE COUNTER; DUAL 4-STAGE BINARY COUNTER FAST AND LS TTL DATA 5-544

SN54/74LS390 SN54/74LS393 DUAL DECADE COUNTER; DUAL 4-STAGE BINARY COUNTER DUAL DECADE COUNTER; DUAL 4-STAGE BINARY COUNTER FAST AND LS TTL DATA 5-544 DUA DECADE ER; DUA -STAGE BINARY ER The SN5/7S and SN5/7S each contain a pair of high-speed -stage ripple counters. Each half of the S is partitioned into a divide-by-two section and a divide-by five section,

More information

NTD5865NL. N-Channel Power MOSFET 60 V, 46 A, 16 m

NTD5865NL. N-Channel Power MOSFET 60 V, 46 A, 16 m N-Channel Power MOSFET 6 V, 6 A, 6 m Features Low Gate Charge Fast Switching High Current Capability % Avalanche Tested These Devices are Pb Free, Halogen Free and are RoHS Compliant MAXIMUM RATINGS (

More information

Freescale Semiconductor, I

Freescale Semiconductor, I nc. SEMICONDUCTOR TECHNICAL DATA Order this document by MPX200/D The MPX200 series device is a silicon piezoresistive pressure sensors provide a very accurate and linear voltage output directly proportional

More information

MC34063A, MC33063A, NCV33063A. 1.5 A, Step Up/Down/ Inverting Switching Regulators

MC34063A, MC33063A, NCV33063A. 1.5 A, Step Up/Down/ Inverting Switching Regulators MC3403A, MC3303A, NCV3303A.5 A, Step Up/Down/ Inverting Switching Regulators The MC3403A Series is a monolithic control circuit containing the primary functions required for DC to DC converters. These

More information

2N3055A (NPN), MJ15015 (NPN), MJ15016 (PNP) Complementary Silicon High Power Transistors

2N3055A (NPN), MJ15015 (NPN), MJ15016 (PNP) Complementary Silicon High Power Transistors (NPN), MJ (NPN), MJ6 (PNP) MJ and MJ6 are Preferred Devices Complementary Silicon HighPower Transistors These PowerBase complementary transistors are designed for high power audio, stepping motor and other

More information

LM393, LM293, LM2903, LM2903V, NCV2903, NCV2903V. Low Offset Voltage Dual Comparators

LM393, LM293, LM2903, LM2903V, NCV2903, NCV2903V. Low Offset Voltage Dual Comparators , LM293, LM293, LM293V, NCV293, NCV293V Low Offset Voltage Dual Comparators The series are dual independent precision voltage comparators capable of single or split supply operation. These devices are

More information

NTLJD4116NT1G. Power MOSFET. 30 V, 4.6 A, Cool Dual N Channel, 2x2 mm WDFN Package

NTLJD4116NT1G. Power MOSFET. 30 V, 4.6 A, Cool Dual N Channel, 2x2 mm WDFN Package NTLJDN Power MOSFET V,. A, Cool Dual N Channel, x mm WDFN Package Features WDFN Package Provides Exposed Drain Pad for Excellent Thermal Conduction x mm Footprint Same as SC 88 Lowest R DS(on) Solution

More information

N-Channel 700-V (D-S) MOSFET

N-Channel 700-V (D-S) MOSFET AMN7P N-Channel 7-V (D-S) MOSFET Key Features: Low r DS(on) trench technology Low thermal impedance Fast switching speed PRODUCT SUMMARY r DS(on) (Ω) ID (A) 7 @ V GS = V a VDS (V) Typical Applications:

More information

L M 5 5 5/N E 5 5 5/S A 5 5 5

L M 5 5 5/N E 5 5 5/S A 5 5 5 L M 5 5 5/N E 5 5 5/S A 5 5 5 S i n g l e T i m e r www.fairchildsemi.com Features High Current Drive Capability (00mA) Adjustable Duty Cycle Temperature Stability of 0.005%/ C Timing From µsec to Hours

More information

NE555, SA555, SE555 PRECISION TIMERS

NE555, SA555, SE555 PRECISION TIMERS Timing From Microseconds to Hours Astable or Monostable Operation Adjustable Duty Cycle TTL-Compatible Output Can Sink or Source up to 00 ma Designed To Be Interchangeable With Signetics NE, SA, and SE

More information

2N6387, 2N6388. Plastic Medium-Power Silicon Transistors DARLINGTON NPN SILICON POWER TRANSISTORS 8 AND 10 AMPERES 65 WATTS, VOLTS

2N6387, 2N6388. Plastic Medium-Power Silicon Transistors DARLINGTON NPN SILICON POWER TRANSISTORS 8 AND 10 AMPERES 65 WATTS, VOLTS Plastic Medium-Power Silicon Transistors These devices are designed for generalpurpose amplifier and lowspeed switching applications. Features High DC Current Gain h FE = 2500 (Typ) @ I C = 4.0 Adc CollectorEmitter

More information

MJD31, MJD31C (NPN), MJD32, MJD32C (PNP)

MJD31, MJD31C (NPN), MJD32, MJD32C (PNP) MJD, MJDC (NPN), MJD, MJDC (PNP) MJDC and MJDC are Preferred Devices Complementary Power Transistors For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications.

More information

LV8400V. Forward/Reverse Motor Driver. Bi-CMOS IC

LV8400V. Forward/Reverse Motor Driver. Bi-CMOS IC Ordering number : ENA1385A Bi-CMOS IC Forward/Reverse Motor Driver http://onsemi.com Overview The is a 1-channel motor driver IC using D-MOS FET for output stage and operates in one of the four modes under

More information

LA1654C. Function RF amplifier, rectifier, detector, time code output, and standby circuit.

LA1654C. Function RF amplifier, rectifier, detector, time code output, and standby circuit. Ordering number : ENA0205A Monolithic Linear IC Time Code Reception IC http://onsemi.com Overview The time code reception IC receives long-wave time standard broadcasts (such as the Japanese JJY and German

More information

RF Power Field Effect Transistor Array N-Channel Enhancement-Mode Lateral MOSFET

RF Power Field Effect Transistor Array N-Channel Enhancement-Mode Lateral MOSFET Technical Data Document Number: Rev. 6, 7/2005 Will be replaced by MRF9002NR2 in Q305. N suffix indicates 260 C reflow capable. The PFP-16 package has had lead-free terminations from its initial release.

More information

NTD5867NL. N-Channel Power MOSFET 60 V, 20 A, 39 m

NTD5867NL. N-Channel Power MOSFET 60 V, 20 A, 39 m N-Channel Power MOSFET 6 V, A, 39 m Features Low R DS(on) High Current Capability % Avalanche Tested These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS ( unless otherwise

More information

P D Storage Temperature Range T stg 65 to +150 C. Characteristic Symbol Max Unit Thermal Resistance, Junction to Case R θjc 1.

P D Storage Temperature Range T stg 65 to +150 C. Characteristic Symbol Max Unit Thermal Resistance, Junction to Case R θjc 1. SEMICONDUCTOR TECHNICAL DATA Order this document by /D The RF Line Designed for 24 Volt UHF large signal, common emitter, class AB linear amplifier applications in industrial and commercial FM/AM equipment

More information

BTA08-800CW3G. Triacs. Silicon Bidirectional Thyristors TRIACS 8 AMPERES RMS 800 VOLTS

BTA08-800CW3G. Triacs. Silicon Bidirectional Thyristors TRIACS 8 AMPERES RMS 800 VOLTS BTA8-8CW3G Triacs Silicon Bidirectional Thyristors Designed for high performance full-wave ac control applications where high noise immunity and high commutating di/dt are required. Features Blocking oltage

More information

MC14532B. 8-Bit Priority Encoder

MC14532B. 8-Bit Priority Encoder MC4532B 8-Bit Priority Encoder The MC4532B is cotructed with complementary MOS (CMOS) enhancement mode devices. The primary function of a priority encoder is to provide a binary address for the active

More information

NTHD2102PT1G. Power MOSFET. 8.0 V, 4.6 A Dual P Channel ChipFET

NTHD2102PT1G. Power MOSFET. 8.0 V, 4.6 A Dual P Channel ChipFET NTHDP Power MOSFET. V,. A Dual PChannel ChipFET Features Offers an Ultra Low R DS(on) Solution in the ChipFET Package Miniature ChipFET Package % Smaller Footprint than TSOP making it an Ideal Device for

More information

2N6400 Series. Silicon Controlled Rectifiers. Reverse Blocking Thyristors. SCRs 16 AMPERES RMS 50 thru 800 VOLTS

2N6400 Series. Silicon Controlled Rectifiers. Reverse Blocking Thyristors. SCRs 16 AMPERES RMS 50 thru 800 VOLTS Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supplies; or wherever halfwave silicon

More information

P-Channel 20-V (D-S) MOSFET

P-Channel 20-V (D-S) MOSFET AM3PE P-Channel -V (D-S) MOSFET Key Features: Low r DS(on) trench technology Low thermal impedance Fast switching speed VDS (V) - PRODUCT SUMMARY r DS(on) (mω) 8 @ V GS = -.5V @ V GS = -.5V ID (A) -5.6

More information

TIP120, TIP121, TIP122 (NPN); TIP125, TIP126, TIP127 (PNP) Plastic Medium-Power Complementary Silicon Transistors

TIP120, TIP121, TIP122 (NPN); TIP125, TIP126, TIP127 (PNP) Plastic Medium-Power Complementary Silicon Transistors TIP120, TIP121, TIP122 (); TIP125, TIP126, TIP127 () Preferred Devices Plastic MediumPower Complementary Silicon Transistors Designed for generalpurpose amplifier and lowspeed switching applications. Features

More information

BTB16-600CW3G, BTB16-800CW3G. Triacs Silicon Bidirectional Thyristors. TRIACS 16 AMPERES RMS 600 thru 800 VOLTS

BTB16-600CW3G, BTB16-800CW3G. Triacs Silicon Bidirectional Thyristors. TRIACS 16 AMPERES RMS 600 thru 800 VOLTS BTB-CW3G, BTB-8CW3G Triacs Silicon Bidirectional Thyristors Designed for high performance full-wave ac control applications where high noise immunity and high commutating di/dt are required. Features Blocking

More information

Using a Pulse Width Modulated Output with Semiconductor Pressure Sensors

Using a Pulse Width Modulated Output with Semiconductor Pressure Sensors Freescale Semiconductor Application Note Rev 2, 05/2005 Using a Pulse Width Modulated Output with Semiconductor Pressure by: Eric Jacobsen and Jeff Baum Sensor Design and Applications Group, Phoenix, AZ

More information

Is Now Part of To learn more about ON Semiconductor, please visit our website at

Is Now Part of To learn more about ON Semiconductor, please visit our website at Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC

More information

MBRB20200CT. SWITCHMODE Power Rectifier. Dual Schottky Rectifier SCHOTTKY BARRIER RECTIFIER 20 AMPERES, 200 V

MBRB20200CT. SWITCHMODE Power Rectifier. Dual Schottky Rectifier SCHOTTKY BARRIER RECTIFIER 20 AMPERES, 200 V MBRBCT SWITCHMODE Power Rectifier Dual Schottky Rectifier This device uses the Schottky Barrier technology with a platinum barrier metal. This state of the art device is designed for use in high frequency

More information

MC34064, MC33064, NCV33064

MC34064, MC33064, NCV33064 MC3464, MC3364, NCV3364 Undervoltage Sensing Circuit The MC3464 is an undervoltage sensing circuit specifically designed for use as a reset controller in microprocessorbased systems. It offers the designer

More information

NTLUF4189NZ Power MOSFET and Schottky Diode

NTLUF4189NZ Power MOSFET and Schottky Diode NTLUF89NZ Power MOSFET and Schottky Diode V, N Channel with. A Schottky Barrier Diode,. x. x. mm Cool Package Features Low Qg and Capacitance to Minimize Switching Losses Low Profile UDFN.x. mm for Board

More information

PCS3P8103A General Purpose Peak EMI Reduction IC

PCS3P8103A General Purpose Peak EMI Reduction IC General Purpose Peak EMI Reduction IC Features Generates a 4x low EMI spread spectrum clock Input Frequency: 16.667MHz Output Frequency: 66.66MHz Tri-level frequency Deviation Selection: Down Spread, Center

More information

Built-in low voltage reset and thermal shutdown circuit Compact TSSOP-24 package

Built-in low voltage reset and thermal shutdown circuit Compact TSSOP-24 package Ordering number : ENA1134A Bi-CMOS LSI Forward/Reverse Motor Driver http://onsemi.com Overview is a 2ch forward/reverse motor driver IC using D-MOS FET for output stage. As MOS circuit is used, it supports

More information

MPSA92, MPSA93. High Voltage Transistors. PNP Silicon MAXIMUM RATINGS. MARKING DIAGRAM THERMAL CHARACTERISTICS ORDERING INFORMATION

MPSA92, MPSA93. High Voltage Transistors. PNP Silicon MAXIMUM RATINGS.  MARKING DIAGRAM THERMAL CHARACTERISTICS ORDERING INFORMATION MPSA9, MPSA9 is a Preferred Device High Voltage Transistors PNP Silicon MAXIMUM RATINGS CollectorEmitter Voltage CollectorBase Voltage Rating Symbol Value Unit MPSA9 MPSA9 V CEO V CBO 00 00 00 00 EmitterBase

More information

MJD112 (NPN) MJD117 (PNP) Complementary Darlington Power Transistors. DPAK For Surface Mount Applications

MJD112 (NPN) MJD117 (PNP) Complementary Darlington Power Transistors. DPAK For Surface Mount Applications MJD (NPN) MJD7 (PNP) Preferred Device Complementary Darlington Power Transistors DPAK For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in

More information

EFC2J013NUZ/D. Power MOSFET for 1-Cell Lithium-ion Battery Protection 12 V, 5.8 mω, 17 A, Dual N-Channel

EFC2J013NUZ/D. Power MOSFET for 1-Cell Lithium-ion Battery Protection 12 V, 5.8 mω, 17 A, Dual N-Channel Power MOSFET for 1-Cell Lithium-ion Battery Protection 12 V, 5.8 mω, 17 A, Dual N-Channel This Power MOSFET features a low on-state resistance. This device is suitable for applications such as power switches

More information

NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network

NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network SEMICONDUCTOR TECHNICAL DATA Order this document by MMUN22LT/D NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a

More information

EB W (PEP) AMATEUR RADIO LINEAR AMPLIFIER

EB W (PEP) AMATEUR RADIO LINEAR AMPLIFIER MOTOROLA Order this document by EB63/D SEMICONDUCTOR ENGINEERING BULLETIN EB63 140 W (PEP) AMATEUR RADIO LINEAR AMPLIFIER 2 30 MHz The popularity of 2 30 MHz, SSB, Solid State, linear amplifiers is increasing

More information

MUR405, MUR410, MUR415, MUR420, MUR440, MUR460. SWITCHMODE Power Rectifiers ULTRAFAST RECTIFIERS 4.0 AMPERES, VOLTS

MUR405, MUR410, MUR415, MUR420, MUR440, MUR460. SWITCHMODE Power Rectifiers ULTRAFAST RECTIFIERS 4.0 AMPERES, VOLTS MUR45, MUR4, MUR415, MUR42, MUR44, MUR46 SWITCHMODE Power Rectifiers These state of the art devices are a series designed for use in switching power supplies, inverters and as free wheeling diodes. Features

More information

RoHS Compliant Product

RoHS Compliant Product RoHS Compliant Product Description The SMSNE555 is a highly stable timer IC that can be operated in astable mode and monostable mode. For monostable mode: time delay is controlled by one external and one

More information

MMSZxxxET1G Series, SZMMSZxxxET1G Series. Zener Voltage Regulators. 500 mw SOD 123 Surface Mount

MMSZxxxET1G Series, SZMMSZxxxET1G Series. Zener Voltage Regulators. 500 mw SOD 123 Surface Mount MMSZxxxETG Series, SZMMSZxxxETG Series Zener Voltage Regulators mw SOD Surface Mount Three complete series of Zener diodes are offered in the convenient, surface mount plastic SOD package. These devices

More information

BTA25H-600CW3G, BTA25H-800CW3G. Triacs Silicon Bidirectional Thyristors. TRIACS 25 AMPERES RMS 600 thru 800 VOLTS

BTA25H-600CW3G, BTA25H-800CW3G. Triacs Silicon Bidirectional Thyristors. TRIACS 25 AMPERES RMS 600 thru 800 VOLTS BTAH-600CW3G, BTAH-800CW3G Triacs Silicon Bidirectional Thyristors Designed for high performance full-wave ac control applications where high noise immunity and high commutating di/dt are required. Features

More information

N-Channel 100-V (D-S) MOSFET

N-Channel 100-V (D-S) MOSFET AM744NA N-Channel -V (D-S) MOSFET Key Features: Low r DS(on) trench technology Low thermal impedance Fast switching speed VDS (V) PRODUCT SUMMARY r DS(on) (mω) 5 @ V GS = V 7 @ V GS = 4.5V ID (A) 5 4 Typical

More information

PIN CONNECTIONS

PIN CONNECTIONS Utilizing the circuit designs perfected for Quad Operational Amplifiers, these dual operational amplifiers feature low power drain, a common mode input voltage range extending to ground/v EE, and single

More information

MJD31, MJD31C (NPN), MJD32, MJD32C (PNP) Complementary Power Transistors. DPAK For Surface Mount Applications

MJD31, MJD31C (NPN), MJD32, MJD32C (PNP) Complementary Power Transistors. DPAK For Surface Mount Applications MJD, MJDC (NPN), MJD, MJDC (PNP) Complementary Power Transistors For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features Lead Formed for Surface

More information

1SMB59xxBT3 Series, SZ1SMB59xxT3G Series. 3 Watt Plastic Surface Mount Zener Voltage Regulators

1SMB59xxBT3 Series, SZ1SMB59xxT3G Series. 3 Watt Plastic Surface Mount Zener Voltage Regulators 9xxBT Series, SZ9xxTG Series Watt Plastic Surface Mount Zener Voltage Regulators This complete new line of W Zener diodes offers the following advantages. Features Zener Voltage Range. V to V ESD Rating

More information