SEMICONDUCTOR TECHNICAL DATA

Transcription

1 SEMICONDUCTOR TECHNICAL DATA Order this document by BUL44D/D The BUL44D is state of art High Speed High gain BIPolar transistor (HBIP). High dynamic characteristics and lot to lot minimum spread (±5 ns on storage time) make it ideally suitable for light ballast applications. Therefore, there is no need to guarantee an hfe window. Main features: Low Base Drive Requirement High Peak DC Current Gain (55 IC = ma Extremely Low Storage Time Min/Max Guarantees Due to the HBIP Structure which Minimizes the Spread Integrated Collector Emitter Free Wheeling Diode Fully Characterized and Guaranteed Dynamic VCE(sat) 6 Sigma Process Providing Tight and Reproductible Parameter Spreads It s characteristics make it also suitable for PFC application. POWER TRANSISTORS AMPERES 7 VOLTS 5 WATTS ÎÎ MAXIMUM RATINGS Rating Symbol Value Unit ÎÎ Collector Emitter Sustaining Voltage VCEO 4 Vdc Collector Base Breakdown Voltage VCBO 7 Vdc Collector Emitter Breakdown Voltage VCES 7 Vdc Emitter Base Voltage VEBO Vdc Collector Current Continuous IC Adc Peak () ICM 5 ÎÎ Base Current Continuous IB Adc ÎÎ ÎÎ Base Current Peak () IBM *Total Device TC = 5 C PD 5 Watt ÎÎ ÎÎ *Derate above 5 C.4 W/ C Operating and Storage Temperature TJ, Tstg 65 to 5 C ÎÎ THERMAL CHARACTERISTICS ÎÎ Thermal Resistance Î C/W ÎÎ Junction to Case RθJC.5 Junction to Ambient ÎÎ RθJA 6.5 ÎÎ Maximum Lead Temperature for Soldering Purposes: ÎÎ TL 6 C ÎÎ /8 from case for 5 seconds () Pulse Test: Pulse Width = 5 ms, Duty Cycle %. Designer s and SWITCHMODE are trademarks of Motorola, Inc. CASE A 6 TO AB Designer s Data for Worst Case Conditions The Designer s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves representing boundaries on device characteristics are given to facilitate worst case design. Motorola, Inc. 995 Motorola Bipolar Power Transistor Device Data

2 ELECTRICAL CHARACTERISTICS (TC = 5 C unless otherwise noted) Characteristic Symbol Min OFF CHARACTERISTICS Collector Emitter Sustaining Voltage VCEO(sus) (IC = ma, L = 5 mh) Collector Base Breakdown Voltage VCBO (ICBO = ma) Typ Max Unit ÎÎ ÎÎ 4 47 ÎÎ Vdc 7 9 Vdc Emitter Base Breakdown Voltage VEBO 4.5 ÎÎ Vdc ÎÎ (IEBO = ma) Collector Cutoff TC = 5 C ICEO (VCE = Rated VCEO, IB = ) TC = 5 C µadc 5 Collector Cutoff Current (VCE = Rated VCES, VEB = ) TC = 5 C ICES ÎÎ 5 TC = 5 C 5 Collector Cutoff Current (VCE = 5 V, VEB = TC = 5 C ÎÎ Emitter Cutoff Current IEBO (VEB = Vdc, IC = ) µadc ÎÎ ON CHARACTERISTICS Base Emitter Saturation Voltage Î (IC =.4 Adc, IB = 4 TC = 5 C VBE(sat) ÎÎ Vdc TC = 5 C.65.8 (IC = Adc, IB =. TC = 5 C ÎÎ.87 TC = 5 C.76.9 Collector Emitter Saturation Voltage VCE(sat) (IC =.4 Adc, IB = 4 TC = 5 C ÎÎ Vdc TC = 5 C.7.5 (IC = Adc, IB =. TC = 5 C ÎÎ.8 TC = 5 C.5.6 (IC =.4 Adc, IB = madc) TC = 5 C.45 ÎÎ TC = 5 C.67 DC Current Gain Î hfe ÎÎ (IC =.4 Adc, VCE = TC = 5 TC = 5 C 8 6 (IC = Adc, VCE = Vdc) TC = 5 C TC = 5 C 7 ÎÎ ÎÎ 9.5 DIODE CHARACTERISTICS Forward Diode Voltage ÎÎ VEC. ÎÎ.5 V (IEC = TC = 5 C ÎÎ (IEC =.4 TC = 5 C.9. ÎÎ (IEC =. TC = 5 C.8 ÎÎ ÎÎ (IEC =. TC = 5 C.6 ÎÎ Forward Recovery Time (see Figure bis) Tfr (IF =. Adc, di/dt = A/µs) TC = 5 C 45 ÎÎ ns (IF =.4 Adc, di/dt = A/µs) TC = 5 C ÎÎ 9 ÎÎ (IF = Adc, di/dt = A/µs) TC = 5 C ÎÎ 4 ÎÎ Motorola Bipolar Power Transistor Device Data

3 ELECTRICAL CHARACTERISTICS (TC = 5 C unless otherwise noted) Characteristic Symbol Min Typ Max Unit ÎÎ DYNAMIC SATURATION Î IC =.4 A TC = 5 C VCE(dsat) ÎÎ. TC = 5 C 6.8 Dynamic Saturation Î IB = 4 ma Voltage: VCC = TC = 5 CÎ Î Î.5 V Determined µs TC = 5 C. µs respectively after rising IB TC = 5 C 4.4 V IC = TC = 5 C.8 ÎÎ 9% of final IB IB =. A Î VCC = TC = TC = 5 CÎ.5.8 ÎÎ V DYNAMIC CHARACTERISTICS Current Gain Bandwidth Î ft ÎÎ MHz (IC =.5 Adc, VCE = Vdc, f = MHz) Output Capacitance Î Cob 5 75 pf ÎÎ (VCB = Vdc, IE =, f = MHz) Input Capacitance Cib (VEB = 8 Vdc) 4 5 pf ÎÎ SWITCHING CHARACTERISTICS: Resistive Load (D.C. %, Pulse Width = 4 µs) Turn on TC = 5 CÎ ton IC =.5 Adc, IB = 5 madc TC = 5 C 6 ns IB = 5 madc Turn off Time VCC = TC = TC = 5 C 7 ns Turn on TC = 5 C ton IC = Adc, IB =. Adc Î TC = 5 C 5 5 ns Turn off Time IB =.5 Adc Î VCC = TC = 5 CÎ toff Î..5 TC = 5 C.5 ÎÎ SWITCHING CHARACTERISTICS: Inductive Load (Vclamp = V, VCC = 5 V, L = µh) Fall TC = TC = 5 CÎÎ 5 ns 5 Storage Time IC =.4 Adc Î IB = 4 TC = 5 C ts TC = 5 C.7 µs IB =. Adc Crossover TC = 5 CÎ tc 85 5 TC = 5 C 8 Fall Time TC = 5 C tf ÎÎ 5 TC = 5 C 9 Storage Time IC = Adc Î IB =. TC = ts TC = 5 C µs IB =.5 Adc Crossover TC = tc 75 TC = 5 C Fall Time TC = 5 C tf ÎÎ 5 TC = 5 C 8 Storage Time IC =.8 Adc Î Î IB = 6 TC = 5 C ts.5.5 TC = 5 C Î.8 IB = 6 madc Crossover Time TC = 5 C Î tc 8 ns Î TC = 5 C 4 Fall Time TC = 5 C Î tf 5 5 ns Î TC = 5 C 75 Storage Time IC =.4 Adc IB = 4 TC = 5 C ts TC = 5 C IB = 4 madc Î. Crossover TC = 5 C tc 5 5 TC = 5 C ÎÎ Motorola Bipolar Power Transistor Device Data

4 TYPICAL STATIC CHARACTERISTICS hfe, DC CURRENT GAIN VCE = V TJ = C hfe, DC CURRENT GAIN VCE = 5 V TJ = C Figure. DC Current Volt Figure. DC Current 5 Volt 4 IC/IB = 5 VCE, VOLTAGE (VOLTS) A 4 ma.5 A A VCE, VOLTAGE (VOLTS) IC = ma IB, BASE CURRENT (ma).. TJ = C.. Figure. Collector Saturation Region Figure 4. Collector Emitter Saturation Voltage IC/IB = IC/IB = VCE, VOLTAGE (VOLTS) VCE, VOLTAGE (VOLTS) TJ = C TJ = C Figure 5. Collector Emitter Saturation Voltage Figure 6. Collector Emitter Saturation Voltage 4 Motorola Bipolar Power Transistor Device Data

5 TYPICAL STATIC CHARACTERISTICS IC/IB = 5 IC/IB = VBE, VOLTAGE (VOLTS) TJ = C VBE, VOLTAGE (VOLTS) TJ = C Figure 7A. Base Emitter Saturation Region Figure 7B. Base Emitter Saturation Region VBE, VOLTAGE (VOLTS) IC/IB = TJ = C FORWARD DIODE VOLTAGE (VOLTS) 5 C 5 C REVERSE EMITTER COLLECTOR CURRENT (AMPS) Figure 7C. Base Emitter Saturation Region Figure 8. Forward Diode Voltage Motorola Bipolar Power Transistor Device Data 5

6 TYPICAL SWITCHING CHARACTERISTICS C, CAPACITANCE (pf) Cib (pf) f(test) = MHz Cob (pf) t, TIME (ns) VCC = V PW = 4 µs IC/IB = 5 IC/IB =..8.4 VR, REVERSE VOLTAGE (VOLTS) Figure 9. Capacitance Figure. Resistive Switch Time, ton 4 5 IC/IB = VCC = V PW = 4 µs.5 t, TIME ( µ s) 5 t, TIME ( µ s).5 5 IC/IB = 5.5 VCC = 5 V VZ = V LC = µh Figure. Resistive Switch Time, toff Figure. Inductive Storage Time, IC/IB = IC/IBon = 5 4 t, TIME (ns) 5 4 VCC = 5 V VZ = V LC = µh.5.5 tc tfi t si, STORAGE TIME ( µs) IC = A IC =. A 6 9 VCC = 5 V VZ = V LC = µh 5 hfe, FORCED GAIN Figure. Inductive Switching, tc & IC/IB = 5 Figure 4. Inductive Storage Time 6 Motorola Bipolar Power Transistor Device Data

7 TYPICAL SWITCHING CHARACTERISTICS t fi, FALL TIME (ns) IBoff = IBon VCC = 5 V VZ = V LC = µh IC = A hfe, FORCED GAIN IC =. A 5 tc, CROSSOVER TIME (ns) VCC = 5 V VZ = V LC = µh 6 9 hfe, FORCED GAIN IC = A IC =. A 5 Figure 5. Inductive Fall Time Figure 6. Inductive Crossover Time IC/IB = 5 IBoff = IC/ VCC = 5 V VZ = V LC = µh IC/IB = t, TIME (ns) 5 4 IC/IB = t, TIME (ns) 5.4 VCC = 5 V.8..6 VZ = V LC = µh.4 IC/IB =.8..6 Figure 7. Inductive Switching, tfi Figure 8. Inductive Switching, tc t, TIME (ns) IC/IB = 5 IB = 5 ma IB = ma.5.5 IB = ma IB = 5 ma VCC = 5 V VZ = V LC = µh.5 t, TIME (ns) VCC = 5 V VZ = V LC = µh.5 IC/IB = IC/IB =.5 Figure 9. Inductive Storage Time, tsi Figure. Inductive Storage Time, tsi Motorola Bipolar Power Transistor Device Data 7

8 TYPICAL SWITCHING CHARACTERISTICS VCE dyn µs 9 8 IC 9% IC tfi dyn µs 7 tsi 6 V 5 Vclamp % Vclamp % IC 4 tc 9% IB IB 9% IB µs IB µs TIME TIME Figure. Dynamic Saturation Voltage Measurements Figure. Inductive Switching Measurements VF VFRM tfr VFR (. VF unless otherwise specified) VF. VF IF % IF Figure bis. tfr Measurements Table. Inductive Load Switching Drive Circuit +5 V IC PEAK µf 5 Ω W Ω W MTP8P µf VCE PEAK + V MPF9 MPF9 MUR5 MTP8P RB Iout VCE IB IB A COMMON Voff 5 Ω 5 µf 5 Ω W MJE MTPN RB µf V(BR)CEO(sus) L = mh RB = VCC = Volts IC(pk) = ma IB Inductive Switching L = µh RB = VCC = 5 Volts RB selected for desired IB RBSOA L = 5 µh RB = VCC = 5 Volts RB selected for desired IB 8 Motorola Bipolar Power Transistor Device Data

9 TYPICAL CHARACTERISTICS.5.. µs 5 ms ms DC µs EXTENDED SOA.5.5 V.5 V 5 V TC 5 C GAIN 4 LC = 5 µh VCE, COLLECTOR EMITTER VOLTAGE (VOLTS) VCE, COLLECTOR EMITTER VOLTAGE (VOLTS) Figure. Forward Bias Safe Operating Area Figure 4. Reverse Bias Safe Operating Area POWER DERATING FACTOR THERMAL DERATING SECOND BREAKDOWN DERATING TC, CASE TEMPERATURE ( C) Figure 5. Forward Bias Power Derating 6 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure is based on TC = 5 C; TJ(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to % but must be derated when TC > 5 C. Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the voltages shown on Figure may be found at any case temperature by using the appropriate curve on Figure 5. TJ(pk) may be calculated from the data in Figure 6. At any case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. For inductive loads, high voltage and current must be sustained simultaneously during turn off with the base to emitter junction reverse biased. The safe level is specified as a reverse biased safe operating area (Figure 4). This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode. Motorola Bipolar Power Transistor Device Data 9

10 TYPICAL THERMAL RESPONSE r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) SINGLE PULSE P(pk) t t DUTY CYCLE, D = t/t RθJC(t) = r(t) RθJC RθJC =.5 C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t TJ(pk) TC = P(pk) RθJC(t)... t, TIME (ms) Figure 6. Typical Thermal Response (ZθJC(t)) for BUL44D TYPICAL STATIC CHARACTERISTICS 44 BVCER (VOLTS) ma BVCER ma t fr, FORWARD RECOVERY TIME (ns) di/dt = A/µs TC = 5 C 4 RBE (Ω).5.5 IF, FORWARD CURRENT (AMP) Figure 7. BVCER Figure 8. Forward Recovery Time tfr Motorola Bipolar Power Transistor Device Data

11 PACKAGE DIMENSIONS H Q Z L V G B 4 N D A K F T U R S J C T SEATING PLANE NOTES:. DIMENSIONING AND TOLERANCING PER ANSI Y4.5M, 98.. CONTROLLING DIMENSION: INCH.. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. INCHES MILLIMETERS DIM MIN MAX MIN MAX A B C D F G H J K L N Q R S T U V.45.5 Z.8.4 STYLE : PIN. BASE. COLLECTOR. EMITTER 4. COLLECTOR CASE A 6 TO AB ISSUE Y Motorola Bipolar Power Transistor Device Data

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