LIFETIME BUY LAST ORDER: 25SEP01 LAST SHIP: 26MAR02 MMBR941 MRF947 SERIES. The RF Line SEMICONDUCTOR TECHNICAL DATA
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1 SEMICONDUCTOR TECHNICAL DATA Order this document by MMBR91LT1/D The RF Line Designed or use in high gain, low noise small signal ampliiers. This series eatures excellent broadband linearity and is oered in a variety o packages. Fully Implanted Base and Emitter Structure 9 Finger, Micron Geometry with Gold Top Metal Gold Sintered Back Metal Available in tape and reel packaging options: T1 suix = 3, units per reel T3 suix =, units per reel IC = 5 ma LOW NOISE HIGH FREQUENCY TRANSISTORS CASE 318 8, STYLE 6 SOT 3 LOW PROFILE MMBR91LT1, T3, MMBR91BLT1 CASE 19, STYLE 3 MRF97AT1, MRF97BT1, MRF97T1, T3 REV Motorola, Inc
2 MAXIMUM RATINGS Rating Symbol MMBR91LT1, T3 MRF97 Series Unit Collector Emitter Voltage VCEO Vdc Collector Base Voltage VCBO Vdc Emitter Base Voltage VEBO Vdc Power Dissipation (1) TC = C Derate linearly above Tcase = PDmax Collector Current Continuous () IC 5 5 ma Maximum Junction Temperature TJmax C Storage Temperature Tstg 55 to to +15 C Thermal Resistance, Junction to Case DEVICE MARKING Watts mw/ C RθJC 3 C/W MMBR91LT1 = 7Y MMBR91BLT1 = 7N MRF97T1, T3 = A MRF97BT1 = H MRF97AT1 = G ELECTRICAL CHARACTERISTICS (TA = 5 C unless otherwise noted) OFF CHARACTERISTICS (3) Collector Emitter Breakdown Voltage (IC =.1 ma, IB = ) Collector Base Breakdown Voltage (IC =.1 ma, IE = ) Emitter Cuto Current (VEB = 1. V, IC = ) Collector Cuto Current (VCB = V, IE = ) ON CHARACTERISTICS (3) DC Current Gain (VCE = 6. V, IC = 5. ma) Characteristic Symbol Min Typ Max Unit (MMBR91LT1) (MMBR91BLT1) All All All All V(BR)CEO 1 Vdc V(BR)CBO 3 Vdc IEBO.1 µadc ICBO.1 µadc DC Current Gain (VCE = 1. V, IC = 5 µa) MRF97T1, MRF97BT1 hfe1 5 DC Current Gain (VCE = 6. V, IC = 5. ma) DYNAMIC CHARACTERISTICS Collector Base Capacitance (VCB = V, IE =, = 1. MHz) Current Gain Bandwidth Product (VCE = 6. V, IC = 15 ma, = 1. GHz) MRF97T1, T3 MRF97AT1 MRF97BT1 All All hfe hfe hfe3 hfe Ccb.35 pf T 8. GHz NOTE: 1. To calculate the junction temperature use TJ = PD x RθJC + TCASE. Case temperature measured on collector lead immediately adjacent to body o package.. IC Continuous (MTBF years). 3. Pulse width 3 µs, duty cycle % pulsed.
3 PERFORMANCE CHARACTERISTICS Conditions Insertion Gain (VCE = 6. V, IC = 15 ma, = 1. GHz) (VCE = 6. V, IC = 15 ma, =. GHz) Maximum Unilateral Gain (1) (VCE = 6. V, IC = 15 ma, = 1. GHz) (VCE = 6. V, IC = 15 ma, =. GHz) Noise Figure Minimum (Figure 9) (VCE = 6. V, IC = 5. ma, = 1. GHz) (VCE = 6. V, IC = 5. ma, =. GHz) Associated Gain at Minimum NF (Figure 9) (VCE = 6. V, IC = 5. ma, = 1. GHz) (VCE = 6. V, IC = 5. ma, =. GHz) Noise Figure 5 ohm Source (VCE = 6. V, IC = 5. ma, = 1. GHz) NOTE: 1. Maximum Unilateral Gain is GUmax = CCB, CAPACITANCE (pf) T, GAIN BANDWIDTH PRODUCT (GHz) S1 (1 S11 )(1 S ) Figure 1. Collector Base Capacitance versus Voltage Figure 3. Gain Bandwidth Product versus Collector Current Symbol S1 GU max NFMIN GNF MMBR91LT1, T3 MRF97 Series Min Typ Max Min Typ Max Unit NF5 Ω db TYPICAL CHARACTERISTICS MMBR91LT1, T3; MMBR91BLT1 = 1 GHz = 1 MHz VCB, REVERSE VOLTAGE (V) IC, COLLECTOR CURRENT (ma) hfe, DC CURRENT GAIN S1, INSERTION GAIN (db) IC, COLLECTOR CURRENT (ma) Figure. DC Current Gain versus Collector Current MMBR91LT1, T3 = 1 GHz IC, COLLECTOR CURRENT (ma) Figure. Insertion Gain versus Collector Current db db db db 3
4 FORWARD INSERTION GAIN AND MAXIMUM UNILATERAL GAIN versus FREQUENCY S1, INSERTION GAIN (db) GUmax, MAXIMUM UNILATERAL GAIN (db) GUmax S , FREQUENCY, (GHz) RF INPUT Figure 5. MMBR91LT1, T3 NF, NOISE FIGURE (db) VBE BIAS NETWORK IC = 15 ma GHz IC, COLLECTOR CURRENT (ma) Figure 7. Minimum Noise Figure versus Collector Current *SLUG TUNER GNF, ASSOCIATED GAIN (db) DUT 1 GHz IC = 5 ma 16 MMBR91LT1, T3 MRF CIRCUIT FIGURE 9 3 NF5 Ω NFmin , FREQUENCY, (GHz) Figure 6. Noise Figure and Associated Gain versus Frequency *SLUG TUNER VCE BIAS NETWORK RF OUTPUT *MICROLAB/FXR **SF 11N < 1 GHz **SF 31IN 1 GHz NF, NOISE FIGURE (db) Figure 8. Functional Circuit Schematic (all devices)
5 C, CAPACITANCE (pf), GAIN BANDWIDTH PRODUCT (GHz) T 1.5. Cob Ccb REVERSE VOLTAGE (V) 8 6 Figure 9. Capacitance versus Voltage TYPICAL CHARACTERISTICS MRF97 SERIES h FE, DC CURRENT GAIN IC, COLLECTOR CURRENT (ma) Figure. DC Current Gain versus Collector Current IC, COLLECTOR CURRENT (ma) Figure 11. Gain Bandwidth Product versus Collector Current GAIN (db) MSG, ASSOCIATED GAIN (db) GNF , FREQUENCY (GHz) IC, COLLECTOR CURRENT (ma) Figure 1. Associated Gain and Minimum Noise Figure versus Collector Current MAG #S1# IC = 5 ma Figure 13. Forward Insertion Gain and Maximum Stable/Available Power Gain versus Frequency GNF = 1 GHz MSG NF N F (db) 5
6 6 VCE IC S11 S1 S1 S VCE (Volts) IC (ma) (MHz) Mag φ Mag φ Mag φ Mag φ Table 1. MMBR91LT1, T3 Common Emitter S Parameters
7 VCE IC S11 S1 S1 S (Volts) (ma) (MHz) Mag φ Mag φ Mag φ Mag φ Table 1. MMBR91LT1, T3 Common Emitter S Parameters (continued)
8 VCE (Vdc) IC (ma) (MHz) NFmin (db) 1. Table. MRF97 Series Typical Noise Parameters Γo (MAG, ANGLE) S11 S1 S1 S VCE IC (Volts) (ma) (MHz) Mag φ Mag φ Mag φ Mag φ Table 3. MRF97 Series Common Emitter S Parameters rn
9 9 VCE IC S11 S1 S1 S VCE (Volts) IC (ma) (MHz) Mag φ Mag φ Mag φ Mag φ Table 3. MRF97 Series Common Emitter S Parameters (continued)
10 +j1 + j. j. + j. j. + j.5 j.5 + j.5 j j j j (GHz) NF OPT (db) ΓMS NF OPT RN Figure 1. MMBR91LT1, T3 Constant Gain and Noise Figure Contours ( = 1. GHz) 8 +j1 j j j VCE = 1. V IC =.5 ma AREA OF INSTABILITY VCE = 1. V IC =.5 ma AREA OF INSTABILITY (GHz) NF OPT (db) ΓMS NF OPT RN Figure 15. MMBR91LT1, T3 Constant Gain and Noise Figure Contours ( =.5 GHz) K.8 K.51
11 +j1 + j. j. INPUT + j. j. + j.5 j.5 + j.5 16 j VCE = 6. V IC = 5. ma AREA OF INSTABILITY (GHz) NF OPT (db) ΓMS NF OPT RN Figure 16. MMBR91LT1, T3 Constant Gain and Noise Figure Contours ( =.5 GHz) 5. j1. +j1 3. j j j +j j OUTPUT VCE = 6. V IC = 5. ma AREA OF INSTABILITY (GHz) NF OPT (db) ΓMS NF OPT RN Figure 17. MMBR91LT1, T3 Constant Gain and Noise Figure Contours ( = 1. GHz) K.58 K.93 11
12 IC = 5 ma (GHz) NF OPT Γ o R N K 1. db j.5 INPUT j. j. AREA OF INSTABILITY j = 1 GHz Figure 18. MRF97 Series Constant Gain and Noise Figure Contours VCE = 1 V IC =.5 ma (GHz) NF OPT j1 13 j1 ΓMS NF OPT R N K db INPUT j. j. AREA OF INSTABILITY. 3.. j.5 j.5 5. j j 8. IC = 5 ma (GHz) NF OPT Γ o R N K 1. db j.5 OUTPUT AREA OF INSTABILITY..5 1 = GHz Figure 19. MRF97 Series Constant Gain and Noise Figure Contours..5 1 = 1 GHz Figure. MRF97 Series Constant Gain and Noise Figure Contours j1 8 7 j1 INPUT.1.3 j. j. j j j OUTPUT j j1 j j OUTPUT 1
13 PACKAGE DIMENSIONS V D.5 (.) V A L G 3 1 S H A 3 H L B 1 G S C K CASE ISSUE AF MMBR91LT1, T3, MMBR91BLT1 B C D R N CASE 19 ISSUE J MRF97AT1, MRF97BT1, MRF97T1, T3 J K NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI YM, CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. J INCHES MILLIMETERS DIM MIN MAX MIN MAX A B C D G H J K L S V STYLE 6: PIN 1. BASE. EMITTER 3. COLLECTOR NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI YM, CONTROLLING DIMENSION: INCH. INCHES MILLIMETERS DIM MIN MAX MIN MAX A B C D G H.... J....5 K.17 REF.5 REF L.6 BSC.65 BSC N.8 REF.7 REF R S V STYLE 3: PIN 1. BASE. EMITTER 3. COLLECTOR 13
14 Motorola reserves the right to make changes without urther notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability o its products or any particular purpose, nor does Motorola assume any liability arising out o the application or use o any product or circuit, and speciically disclaims any and all liability, including without limitation consequential or incidental damages. Typical parameters which may be provided in Motorola data sheets and/or speciications can and do vary in dierent applications and actual perormance may vary over time. All operating parameters, including Typicals must be validated or each customer application by customer s technical experts. Motorola does not convey any license under its patent rights nor the rights o others. Motorola products are not designed, intended, or authorized or use as components in systems intended or surgical implant into the body, or other applications intended to support or sustain lie, or or any other application in which the ailure o the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products or any such unintended or unauthorized application, Buyer shall indemniy and hold Motorola and its oicers, employees, subsidiaries, ailiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney ees arising out o, directly or indirectly, any claim o personal injury or death associated with such unintended or unauthorized use, even i such claim alleges that Motorola was negligent regarding the design or manuacture o the part. Motorola and are registered trademarks o Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Airmative Action Employer. Max is a trademark o Motorola, Inc. How to reach us: USA / EUROPE / Locations Not Listed: Motorola Literature Distribution; JAPAN: Motorola Japan Ltd.; SPD, Strategic Planning Oice, 11, P.O. Box 55, Denver, Colorado or Nishi Gotanda, Shinagawa ku, Tokyo, Japan Customer Focus Center: Max : RMFAX@ .sps.mot.com TOUCHTONE ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, Motorola Fax Back System US & Canada ONLY Ting Kok Road, Tai Po, N.T., Hong Kong HOME PAGE: 1 MOTOROLA RF DEVICE MMBR91/D DATA
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