Watts W/ C Storage Temperature Range Tstg 65 to +150 C Operating Junction Temperature TJ 200 C
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1 SEMICONDUCTOR TECHNICAL DATA Order this document by MRF184/D The RF MOSFET Line N Channel Enhancement Mode Lateral MOSFETs Designed for broadband commercial and industrial applications at frequencies to 1. GHz. The high gain and broadband performance of these devices makes them ideal for large signal, common source amplifier applications in 8 volt base station equipment. Guaranteed 945 MHz, 8 Volts Output Power = 6 Watts Power Gain = 11.5 db Efficiency = 5% Characterized with Series Equivalent Large Signal D Impedance Parameters S Parameter Characterization at High Bias Levels Excellent Thermal Stability Capable of Handling :1 8 Vdc, 945 MHz G 6 W, 1. GHz LATERAL N CHANNEL BROADBAND RF POWER MOSFETs CASE 6B 1, STYLE 1 (MRF184) CASE 6C, STYLE 1 (MRF184S) MAXIMUM RATINGS S Rating Symbol Value Unit Drain Source Voltage VDSS 65 Vdc Gate Source Voltage VGS ± Vdc Drain Current Continuous ID 7 Adc Total Device TC = 7 C Derate above 7 C PD Watts W/ C Storage Temperature Range Tstg 65 to +15 C Operating Junction Temperature TJ C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Case RθJC 1.1 C/W ELECTRICAL CHARACTERISTICS (TC = 5 C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain Source Breakdown Voltage (VGS = V, ID = 1 Adc) Zero Gate Voltage Drain Current (VDS = 8 V, VGS = V) Gate Source Leakage Current (VGS = V, VDS = V) V(BR)DSS 65 Vdc IDSS 1 µadc IGSS 1 µadc NOTE CAUTION MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV MOTOROLA Motorola, Inc RF DEVICE DATA 1
2 ELECTRICAL CHARACTERISTICS continued (TC = 5 C unless otherwise noted) Characteristic Symbol Min Typ Max Unit ON CHARACTERISTICS Gate Threshold Voltage VGS(th) 4 Vdc (VDS = 1 V, ID = µa) Gate Quiescent Voltage (VDS = 8 V, ID = 1 ma) Drain Source On Voltage (VGS = 1 V, ID = A) Forward Transconductance (VDS = 1 V, ID = A) DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 8 V, VGS = V, f = 1 MHz) Output Capacitance (VDS = 8 V, VGS = V, f = 1 MHz) Reverse Transfer Capacitance (VDS = 8 V, VGS = V, f = 1 MHz) FUNCTIONAL CHARACTERISTICS Common Source Power Gain (VDD = 8 V, Pout = 6 W, f = 945 MHz, IDQ = 1 ma) Drain Efficiency (VDD = 8 V, Pout = 6 W, f = 945 MHz, IDQ = 1 ma) VGS(Q) 4 5 Vdc VDS(on).65.8 Vdc gfs..6 s Ciss 8 pf Coss 44 pf Crss 4. pf Gps db η 5 6 % Load Mismatch (VDD = 8 V, Pout = 6 W, IDQ = 1 ma, f = 945 MHz, Load VSWR 5:1 at all Phase Angles) ψ No Degradation in Output Power VGG R1 R C5 R C6 C7 C8 C C9 L1 R4 B1 C1 C11 C1 C1 VDD RF INPUT TL1 C1 TL DUT TL C4 TL4 RF OUTPUT C B1 Short RF Bead Fair Rite C1 18 pf Chip Capacitor C, C, C6, C9 4 pf Chip Capacitor C4 1 pf Chip Capacitor C5, C1 1 µf, 5 Vdc Electrolytic Capacitor C7, C1 1 pf Chip Capacitor C8, C11.1 µf, 5 Vdc Chip Capacitor C1 5 µf, 5 Vdc Electrolytic Capacitor L1 5 Turns, AWG, IDIA.16 R1 1 kω, 1/4 W Resistor R 1 kω, 1/4 W Resistor R 1. kω, 1/4 W Chip Resistor R4 4 x 9 Ω, 1/8 W Chip Resistor TL1 TL4 Microstrip Line See Photomaster Ckt Board 1/ Glass Teflon, εr =.55 ARLON GX 55 Figure 1. MRF184 Test Circuit Schematic
3 TYPICAL CHARACTERISTICS IMD, INTERMODULATION DISTORTION (dbc) 4 5 rd ORDER 6 VDD = 8 Vdc f1 = 945 MHz 7 f = MHz IDQ = 4 ma Pout, OUTPUT POWER (WATTS PEP) 5th 7th IMD, INTERMODULATION DISTORTION (dbc) IDQ = 1 ma 5 ma 6 ma 45 VDD = 8 Vdc 4 ma f1 = 945 MHz f = MHz Pout, OUTPUT POWER (WATTS PEP) Figure. Intermodulation Distortion versus Output Power Figure. Intermodulation Distortion versus Output Power Gpe, POWER GAIN (db) IDQ = 6 ma 5 ma 1 ma 4 ma Pout, OUTPUT POWER (WATTS) VDD = 8 Vdc f = 945 MHz Pout, OUTPUT POWER (WATTS) Gpe Pout VDS = 8 Vdc 1 IDQ = 4 ma f = 945 MHz Pin, INPUT POWER (WATTS) 15 Gpe, POWER GAIN (db) Figure 4. Power Gain versus Output Power Figure 5. Output Power versus Input Power Pout, OUTPUT POWER (WATTS) Pin = 4. W. W 1. W 1 IDQ = 4 ma f = 945 MHz VDD, SUPPLY VOLTAGE (VOLTS) Pout, OUTPUT POWER (WATTS) TYPICAL DEVICE SHOWN VDS = 8 Vdc 1 Pin =. W f = 945 MHz VGS, GATE SOURCE VOLTAGE (VOLTS) Figure 6. Output Power versus Supply Voltage Figure 7. Output Power versus Gate Voltage
4 TYPICAL CHARACTERISTICS 9 4 Pout, OUTPUT POWER (WATTS) VDD = 8 Vdc IDQ = 4 ma SINGLE TONE Pin =.5 W 1. W.5 W f, FREQUENCY (MHz) ID, DRAIN CURRENT (ma).5.5 TYPICAL DEVICE SHOWN VDS = 8 Vdc VGS, GATE VOLTAGE (VOLTS) Figure 8. Output Power versus Frequency Figure 9. Drain Current versus Gate Voltage C, CAPACITANCE (pf) VGS = Vdc f = 1. MHz VDS, DRAIN SOURCE VOLTAGE (VOLTS) Figure 1. Capacitance versus Voltage Ciss Coss Crss, DRAIN CURRENT (AMPS) ID TJ = 15 C.5 TF = 7 C VDS, DRAIN VOLTAGE (Vdc) Figure 11. DC Safe Operating Area ID, DRAIN CURRENT (AMPS) TJ = 175 C.5 TF = 7 C VDS, DRAIN VOLTAGE (Vdc) Gpe, POWER GAIN (db) Gpe VDD = 8 Vdc IDQ = 4 ma VSWR Pout = 6 W (CW) f, FREQUENCY (MHz) η η, EFFICIENCY (%) INPUT VSWR Figure 1. DC Safe Operating Area Figure 1. Performance in Broadband Circuit 4
5 P out, OUTPUT POWER (dbm) FUNDAMENTAL rd ORDER VDS = 6 Vdc ID =.1 A f1 = 945 MHz f = MHz Pin, INPUT POWER (dbm) Figure 14. Class A Third Order Intercept Point R1 C1 R C5 R C8 C7 C6 C C9 L1 B1 R4 C11 C1 C1 C1 C4 TL TL TL1 TL4 C XRF184 Figure 15. Component Parts Layout 5
6 Zin f = 1 MHz f = 1 MHz 95 9 Z = 1 Ω 85 8 ZOL* VDD = 8 Vdc, IDQ = 1 ma, Pout = 6 W f MHz Zin Ohms ZOL* Ohms j j j j j j j j j j.4 Zin = Conjugate of source impedance. Zout = Conjugate of the load impedance at given output ZOL* = power, voltage, frequency and efficiency. Note: ZOL* was chosen based on tradeoffs between gain, drain efficiency and device stability. Figure 16. Series Equivalent Input and Output Impedance 6
7 Table 1. Common Source S Parameters (VDS = 1.5 V) ID =. A f S11 S1 S1 S MHz S11 φ S1 φ S1 φ S φ
8 Table. Common Source S Parameters (VDS = 8 V) ID =. A f S11 S1 S1 S MHz S11 φ S1 φ S1 φ S φ
9 PACKAGE DIMENSIONS G NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, CONTROLLING DIMENSION: INCH. B K H E D 1 N A F Q PL.5 (.1) M T A M B M C T SEATING PLANE CASE 6B 1 ISSUE O (MRF184) INCHES MILLIMETERS DIM MIN MAX MIN MAX A B C D E F G.56 BSC 14.7 BSC H K N Q STYLE 1: PIN 1. DRAIN. GATE. SOURCE B 1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, CONTROLLING DIMENSION: INCH. H K E D N A F C T SEATING PLANE INCHES MILLIMETERS DIM MIN MAX MIN MAX A B C D E F H K N STYLE 1: PIN 1. DRAIN. GATE. SOURCE CASE 6C ISSUE B (MRF184S) Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Typical parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Mfax is a trademark of Motorola, Inc. How to reach us: USA / EUROPE / Locations Not Listed: Motorola Literature Distribution; JAPAN: Nippon Motorola Ltd.: SPD, Strategic Planning Office, 4 1, P.O. Box 545, Denver, Colorado or Nishi Gotanda, Shinagawa ku, Tokyo 141, Japan Mfax : RMFAX@ .sps.mot.com TOUCHTONE ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, US & Canada ONLY Ting Kok Road, Tai Po, N.T., Hong Kong INTERNET: MRF184/D 9
10 This datasheet has been download from: Datasheets for electronics components.
PD Storage Temperature Range Tstg 65 to +200 C Operating Junction Temperature TJ 200 C
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