MJE13002 MJE13003 Unit

Transcription

1 SEMONDUCTOR TECHNAL DATA Order this document by MJE3/D These devices are designed for high voltage, high speed power switching inductive circuits where fall time is critical. They are particularly suited for and V SWITCHMODE applications such as Switching Regulators, Inverters, Motor Controls, Solenoid/Relay drivers and Deflection circuits. SPECIFATION FEATURES: Reverse Biased SOA with Inductive TC = C Inductive Switching Matrix to. Amp, and C... A, C is 9 ns (Typ). 7 V Blocking Capability SOA and Switching Applications Information. *Motorola Preferred Device. AMPERE NPN SILON POWER TRANSISTORS 3 AND 4 VOLTS 4 WATTS ÎÎ MAXIMUM RATINGS ÎÎ Rating Symbol MJE3 MJE33 Unit ÎÎ Collector Emitter Voltage VCEO(sus) 3 4 Vdc ÎÎ Collector Emitter Voltage VCEV 6 7 Vdc ÎÎ Emitter Base Voltage VEBO 9 Vdc ÎÎ Collector Current Continuous. Adc ÎÎ Peak () M 3 Base Current Continuous ÎÎ IB.7 Adc Peak () IBM. Emitter Current Continuous Î IE. Adc ÎÎ Peak () IEM 4. ÎÎ Total Power TA = C PD.4 Watts ÎÎ Derate above C. mw/ C Total Power TC = C ÎÎ PD 4 Watts ÎÎ Derate above C 3 mw/ C Operating and Storage Junction Temperature Range TJ, ÎÎ Tstg 6 to + ÎÎ C ÎÎ THERMAL CHARACTERISTS Characteristic ÎÎ Symbol Max Unit Thermal Resistance, Junction to Case ÎÎ RθJC 3. C/W Thermal Resistance, Junction to Ambient ÎÎ RθJA 89 C/W Maximum Load Temperature for Soldering Purposes: TL 7 C /8 from Case for Seconds ÎÎ () Pulse Test: Pulse Width = ms, Duty Cycle %. CASE 77 8 TO AA TYPE Designer s Data for Worst Case Conditions The Designer s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves representing boundaries on device characteristics are given to facilitate worst case design. Preferred devices are Motorola recommended choices for future use and best overall value. Designer s and SWITCHMODE are trademarks of Motorola, Inc. REV 4 Motorola, Inc. 99 Motorola Bipolar Power Transistor Device Data

2 ÎÎ ELECTRAL CHARACTERISTS (TC = C unless otherwise noted) Characteristic Symbol Min Typ Max Unit ÎÎ OFF CHARACTERISTS () Collector Emitter Sustaining Voltage ( = ma, IB = ) MJE3 VCEO(sus) ÎÎ Vdc 3 MJE33 4 Collector Cutoff Current ÎÎ EV madc (VCEV = Rated Value, VBE(off) =. Vdc) (VCEV = Rated Value, VBE(off) =. Vdc, TC = C) Emitter Cutoff Current IEBO madc (VEB = 9 Vdc, = ) ÎÎ ÎÎ SECOND BREAKDOWN Second Breakdown Collector Current with bass forward biased IS/b ÎÎ See Figure Clamped Inductive SOA with base reverse biased RBSOAÎÎ See Figure ÎÎ ON CHARACTERISTS () DC Current Gain hfe ÎÎ ÎÎ ( = Adc, VCE = Vdc) 8 4 ( = Adc, VCE = Vdc) Collector Emitter Saturation Voltage VCE(sat) Vdc ( = Adc, IB =. Adc) ( = Adc, IB = Adc) ( =. Adc, IB = Adc) ÎÎ ( = Adc, IB = Adc, TC = C) 3 Base Emitter Saturation Voltage ( = Adc, IB =. Adc) ( = Adc, IB = Adc) VBE(sat) ÎÎ Vdc ÎÎ ( = Adc, IB = Adc, TC = C). ÎÎ. DYNAM CHARACTERISTS Current Gain Bandwidth Product ft 4 MHz ÎÎ ( = madc, VCE = Vdc, f = MHz) Output Capacitance Cob pf (VCB = Vdc, IE =, f =. MHz) ÎÎ ÎÎ SWITCHING CHARACTERISTS ÎÎ Resistive Load (Table ) Delay Time td. Rise Time Î (VCC = Vdc, = A, tr Storage Time Î IB = IB = A, tp =, Duty Cycle %) ts 4 Fall Time tf.4.7 ÎÎ Inductive Load, Clamped (Table, Figure 3) Storage Time tsv.7 4 Crossover Time Î ( = A, Vclamp = 3 Vdc, tc 9.7 IB = A, VBE(off) = Vdc, TC = C) Fall Time () Pulse Test: PW = 3, Duty Cycle %. tfi Motorola Bipolar Power Transistor Device Data

3 hfe, DC CURRENT GAIN V, VOLTAGE (VOLTS), COLLECTOR CURRENT ( µ A) VCE = V VCE = V Figure. DC Current Gain C, CAPACITANCE (pf) V, VOLTAGE (VOLTS) VCE, COLLECTOR EMITTER VOLTAGE (VOLTS) , COLLECTOR CURRENT (AMP) IB, BASE CURRENT (AMP) VCE = V TJ = C TJ = C C C, COLLECTOR CURRENT (AMP) Figure 3. Base Emitter Voltage C C 7 C C C TJ = C C C /IB = 3 VCE = V C REVERSE FORWARD VBE, BASE EMITTER VOLTAGE (VOLTS) =. A.3 A Figure. Collector Saturation Region /IB = 3, COLLECTOR CURRENT (AMP) TJ = C Figure 4. Collector Emitter Saturation Region Cib A A. A C TJ = C C VR, REVERSE VOLTAGE (VOLTS) TJ = C Cob Figure. Collector Cutoff Region Figure 6. Capacitance Motorola Bipolar Power Transistor Device Data 3

4 Table. Test Conditions for Dynamic Performance REVERSE BIAS SAFE OPERATING AREA AND INDUCTIVE SWITCHING RESISTIVE SWITCHING TEST CIRCUITS PW V DUTY CYCLE % tr, tf ns 68. µf k N4933 NOTE. µf 7 PW and V CC Adjusted for Desired I C R B Adjusted for Desired I B k + V N N4933 N k N V MJE RB IB MJE / W VBE(off) T.U.T. VCC L MR86* Vclamp *SELECTED FOR kv. k VCE + V RC TUT RB SCOPE D 4. V CIRCUIT VALUES Coil Data: Ferroxcube Core #666 Full Bobbin (~ Turns) # GAP for 3 mh/ A Lcoil = mh VCC = V Vclamp = 3 Vdc VCC = V RC = Ω D = N8 or Equiv. RB = 47 Ω TEST WAVEFORMS VCE (pk) TIME t VCE or Vclamp tf tf CLAMPED t t OUTPUT WAVEFORMS t t Adjusted to Obtain t L coil (pk) VCC t L coil (pk) Vclamp Test Equipment Scope Tektronics 47 or Equivalent +.3 V 8. V tr, tf < ns Duty Cycle =.% RB and RC adjusted for desired IB and VCE IB 9% IB tsv PK 9% Vclamp 9% trv tc tfi Vclamp % Vclamp % PK tti % Table. Typical Inductive Switching Performance ÎÎ TC t AMP sv t C rv tfi tti t c ÎÎ ÎÎ ÎÎ NOTE: All Data Recorded in the Inductive Switching Circuit in Table TIME Figure 7. Inductive Switching Measurements 4 Motorola Bipolar Power Transistor Device Data

5 SWITCHING TIMES NOTE In resistive switching circuits, rise, fall, and storage times have been defined and apply to both current and voltage waveforms since they are in phase. However, for inductive loads which are common to SWITCHMODE power supplies and hammer drivers, current and voltage waveforms are not in phase. Therefore, separate measurements must be made on each waveform to determine the total switching time. For this reason, the following new terms have been defined. tsv = Voltage Storage Time, 9% IB to % Vclamp trv = Voltage Rise Time, 9% Vclamp tfi = Current Fall Time, 9 % tti = Current Tail, % tc = Crossover Time, % Vclamp to % An enlarged portion of the inductive switching waveforms is shown in Figure 7 to aid in the visual identity of these terms. For the designer, there is minimal switching loss during storage time and the predominant switching power losses occur during the crossover interval and can be obtained using the standard equation from AN : PSWT = / VCC(tc)f In general, trv + tfi tc. However, at lower test currents this relationship may not be valid. As is common with most switching transistors, resistive switching is specified at C and has become a benchmark for designers. However, for designers of high frequency converter circuits, the user oriented specifications which make this a SWITCHMODE transistor are the inductive switching speeds (tc and tsv) which are guaranteed at C. RESISTIVE SWITCHING PERFORMANCE t, TIME ( µ s) tr VBE(off) = V VCC = V /IB = TJ = C , COLLECTOR CURRENT (AMP) t, TIME ( µ s) 7 VCC = V ts /IB = TJ = C tf , COLLECTOR CURRENT (AMP) Figure 8. Turn On Time Figure 9. Turn Off Time r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) D =. SINGLE PULSE. ZθJC(t) = r(t) RθJC RθJC = 3. C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t TJ(pk) TC = P(pk) RθJC(t) t, TIME OR PULSE WIDTH (ms) Figure. Thermal Response P(pk) t t DUTY CYCLE, D = t/t Motorola Bipolar Power Transistor Device Data

6 The Safe Operating Area figures shown in Figures and are specified ratings for these devices under the test conditions shown., COLLECTOR CURRENT (AMP), COLLECTOR CURRENT (AMP) TJ C IB = A TC = C VBE(off) = 9 V dc VCE, COLLECTOR EMITTER VOLTAGE (VOLTS). ms THERMAL LIMIT (SINGLE PULSE) BONDING WIRE LIMIT SECOND BREAKDOWN LIMIT CURVES APPLY BELOW RATED VCEO MJE3 MJE33 3 Figure. Active Region Safe Operating Area V 3 V. V. ms MJE3 MJE33 VCEV, COLLECTOR EMITTER CLAMP VOLTAGE (VOLTS) 8 SAFE OPERATING AREA INFORMATION FORWARD BIAS There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure is based on TC = C; TJ(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to % but must be derated when TC C. Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the voltages shown on Figure may be found at any case temperature by using the appropriate curve on Figure 3. TJ(pk) may be calculated from the data in Figure. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. REVERSE BIAS For inductive loads, high voltage and high current must be sustained simultaneously during turn off, in most cases, with the base to emitter junction reverse biased. Under these conditions the collector voltage must be held to a safe level at or below a specific value of collector current. This can be accomplished by several means such as active clamping, RC snubbing, load line shaping, etc. The safe level for these devices is specified as Reverse Bias Safe Operating Area and represents the voltage current conditions during reverse biased turn off. This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode. Figure gives RBSOA characteristics. Figure. Reverse Bias Safe Operating Area POWER DERATING FACTOR THERMAL DERATING SECOND BREAKDOWN DERATING TC, CASE TEMPERATURE ( C) Figure 3. Forward Bias Power Derating 6 Motorola Bipolar Power Transistor Device Data

7 PACKAGE DIMENSIONS H Q B U 3 V G S F A K D PL M J C R (.) M A M B M (.) M A M B M NOTES:. DIMENSIONING AND TOLERANCING PER ANSI Y4.M, 98.. CONTROLLING DIMENSION: INCH. INCHES MILLIMETERS DIM MIN MAX MIN MAX A B C D F G.94 BSC.39 BSC H J K M TYP TYP Q R S U V.4. STYLE 3: PIN. BASE. COLLECTOR 3. EMITTER CASE 77 8 TO AA TYPE ISSUE V Motorola Bipolar Power Transistor Device Data 7

8 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Typical parameters can and do vary in different applications. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. How to reach us: USA / EUROPE: Motorola Literature Distribution; JAPAN: Nippon Motorola Ltd.; Tatsumi SPD JLDC, Toshikatsu Otsuki, P.O. Box 9; Phoenix, Arizona F Seibu Butsuryu Center, 3 4 Tatsumi Koto Ku, Tokyo 3, Japan MFAX: RMFAX@ .sps.mot.com TOUCHTONE (6) HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, INTERNET: NET.com Ting Kok Road, Tai Po, N.T., Hong Kong Motorola Bipolar Power Transistor Device Data MJE3/D