2N5400 2N5401. PNP Silicon SEMICONDUCTOR TECHNICAL DATA MAXIMUM RATINGS THERMAL CHARACTERISTICS

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1 SEMICONDUCTOR TECHNICAL DATA Order this document by /D PNP Silicon *Motorola Preferred Device COLLECTOR 3 2 BASE EMITTER MAXIMUM RATINGS Rating Symbol 2N540 Unit Collector Emitter Voltage VCEO Collector Base Voltage VCBO 60 Emitter Base Voltage VEBO 5.0 Collector Current Continuous IC 600 madc Total Device TA = 25 C Derate above 25 C PD mw mw/ C 2 3 CASE 29 04, STYLE TO 92 (TO 226AA) Total Device TC = 25 C Derate above 25 C PD.5 2 Watts mw/ C Operating and Storage Junction Temperature Range TJ, Tstg 55 to + C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient R JA C/W Thermal Resistance, Junction to Case R JC 83.3 C/W ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted) OFF CHARACTERISTICS Collector Emitter Breakdown Voltage() (IC =.0 madc, IB = 0) Collector Base Breakdown Voltage (IC = 00 Adc, IE = 0) Emitter Base Breakdown Voltage (IE = 0 Adc, IC = 0) Characteristic Symbol Min Max Unit 2N540 2N540 V(BR)CEO V(BR)CBO 60 V(BR)EBO 5.0 Collector Cutoff Current (VCB = 00, IE = 0) (VCB =, IE = 0) (VCB = 00, IE = 0, TA = 00 C) (VCB =, IE = 0, TA = 00 C) 2N540 2N540 ICBO nadc µadc Emitter Cutoff Current (VEB = 3.0, IC = 0) IEBO nadc. Pulse Test: Pulse Width = 0 s, Duty Cycle = 2.0%. Preferred devices are Motorola recommended choices for future use and best overall value. Motorola Small Signal Transistors, FETs and Diodes Device Data Motorola, Inc. 996

2 ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted) (Continued) ON CHARACTERISTICS() DC Current Gain (IC =.0 madc, VCE = 5.0 ) Characteristic Symbol Min Max Unit 2N540 hfe (IC = 0 madc, VCE = 5.0 ) 2N (IC = madc, VCE = 5.0 ) Collector Emitter Saturation Voltage (IC = 0 madc, IB =.0 madc) (IC = madc, IB = 5.0 madc) Base Emitter Saturation Voltage (IC = 0 madc, IB =.0 madc) (IC = madc, IB = 5.0 madc) SMALL SIGNAL CHARACTERISTICS Current Gain Bandwidth Product (IC = 0 madc, VCE = 0, f = 00 MHz) Output Capacitance (VCB = 0, IE = 0, f =.0 MHz) Small Signal Current Gain (IC =.0 madc, VCE = 0, f =.0 khz) Noise Figure (IC = 2 µadc, VCE = 5.0, RS =.0 kω, f =.0 khz). Pulse Test: Pulse Width = 0 s, Duty Cycle = 2.0%. 2N540 2N540 2N540 VCE(sat) VBE(sat) ft MHz Cobo 6.0 pf hfe 40 NF 8.0 db 2 Motorola Small Signal Transistors, FETs and Diodes Device Data

3 h FE, CURRENT GAIN C 25 C VCE =.0 V VCE = 5.0 V Figure. DC Current Gain VCE, COLLECTOR EMITTER VOLTAGE (VOLTS) IC =.0 ma 0 ma ma 00 ma IB, BASE CURRENT (ma) Figure 2. Collector Saturation Region, COLLECTOR CURRENT ( µ A) IC VCE = V 75 C REVERSE 25 C IC = ICES FORWARD VBE, BASE EMITTER VOLTAGE (VOLTS) Figure 3. Collector Cut Off Region Motorola Small Signal Transistors, FETs and Diodes Device Data 3

4 V, VOLTAGE (VOLTS) IC/IB = IC/IB = Figure 4. On Voltages V, TEMPERATURE COEFFICIENT (mv/ C) θ TJ = 55 C to 35 C θvc for VCE(sat) θvb for VBE(sat) Figure 5. Temperature Coefficients VBB V VCC V V Vin 0 µs INPUT PULSE tr, tf 0 ns DUTY CYCLE =.0% k 0.25 µf RB 5. k Vin 00 N94 RC Vout C, CAPACITANCE (pf) Cibo Cobo Values Shown are for 0 ma Figure 6. Switching Time Test Circuit VR, REVERSE VOLTAGE (VOLTS) Figure 7. Capacitances t, TIME (ns) IC/IB = 0 VBE(off) =.0 V VCC = V VCC = V VCC = V t, TIME (ns) IC/IB = 0 VCC = V VCC = V VCC = V Figure 8. Turn On Time Figure 9. Turn Off Time 4 Motorola Small Signal Transistors, FETs and Diodes Device Data

5 PACKAGE DIMENSIONS SEATING PLANE R A X X H V N F G P N B L K C D J SECTION X X NOTES:. DIMENSIONING AND TOLERANCING PER ANSI Y4.5M, CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSION D AND J APPLY BETWEEN L AND K MINIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. INCHES MILLIMETERS DIM MIN MAX MIN MAX A B C D F G H J K L N P R 2.93 V CASE (TO 226AA) ISSUE AD STYLE : PIN. EMITTER 2. BASE 3. COLLECTOR Motorola Small Signal Transistors, FETs and Diodes Device Data 5

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