PNP Silicon. MAXIMUM RATINGS MARKING DIAGRAMS. THERMAL CHARACTERISTICS (Note 1.) ORDERING INFORMATION

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1 Preferred Device PNP Silicon MAXIMUM RATINGS Rating Symbol Value Unit CollectorEmitter Voltage VCEO 40 Vdc CollectorBase Voltage VCBO 40 Vdc EmitterBase Voltage VEBO 5.0 Vdc Collector Current Continuous IC 200 madc Total Device TA = 25 C Derate above 25 C Total Power TA = 60 C Total Device TC = 25 C Derate above 25 C Operating and Storage Junction Temperature Range PD mw mw/ C PD 250 mw PD TJ, Tstg to +150 Watts mw/ C THERMAL CHARACTERISTICS (Note 1.) Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RθJA 200 C/W Thermal Resistance, Junction to Case 1. Indicates Data in addition to JEDEC Requirements. C RθJC 83.3 C/W STYLE 1 TO92 CASE 29 STYLE 1 MARKING DIAGRAMS Y WW 2N 3906 YWW = Year = Work Week ORDERING INFORMATION Device Package Shipping 2N3906 TO Units/Box 2N3906RLRA TO /Tape & Reel 2N3906RLRE TO /Tape & Reel 2N3906RLRM TO /Ammo Pack 2N3906RLRP TO /Ammo Pack 2N3906RL1 TO /Tape & Reel 2N3906ZL1 TO /Ammo Pack Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 November, 2001 Rev. 0 1 Publication Order Number: 2N3906/D

2 ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Breakdown Voltage (Note 2.) (IC = 1.0 madc, IB = 0) V(BR)CEO 40 Vdc CollectorBase Breakdown Voltage (IC = 10 Adc, IE = 0) V(BR)CBO 40 Vdc EmitterBase Breakdown Voltage (IE = 10 Adc, IC = 0) V(BR)EBO 5.0 Vdc Base Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) IBL 50 nadc Collector Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) ICEX 50 nadc ON CHARACTERISTICS (Note 2.) DC Current Gain (IC = 0.1 madc, VCE = 1.0 Vdc) (IC = 1.0 madc, VCE = 1.0 Vdc) (IC = 10 madc, VCE = 1.0 Vdc) (IC = 50 madc, VCE = 1.0 Vdc) (IC = 100 madc, VCE = 1.0 Vdc) hfe CollectorEmitter Saturation Voltage (IC = 10 madc, IB = 1.0 madc) (IC = 50 madc, IB = 5.0 madc VCE(sat) Vdc BaseEmitter Saturation Voltage (IC = 10 madc, IB = 1.0 madc) (IC = 50 madc, IB = 5.0 madc) VBE(sat) Vdc SMALLSIGNAL CHARACTERISTICS CurrentGain Bandwidth Product (IC = 10 madc, VCE = 20 Vdc, f = 100 MHz) ft 250 MHz Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Cobo 4.5 pf Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Cibo 10 pf Input Impedance (IC = 1.0 madc, VCE = 10 Vdc, f = 1.0 khz) hie kω Voltage Feedback Ratio (IC = 1.0 madc, VCE = 10 Vdc, f = 1.0 khz) hre X 104 SmallSignal Current Gain (IC = 1.0 madc, VCE = 10 Vdc, f = 1.0 khz) hfe Output Admittance (IC = 1.0 madc, VCE = 10 Vdc, f = 1.0 khz) hoe mhos Noise Figure (IC = 100 Adc, VCE = 5.0 Vdc, RS = 1.0 kω, f = 1.0 khz) SWITCHING CHARACTERISTICS NF 4.0 Delay Time = = td 35 ns (VCC 3.0 Vdc, VBE 0.5 Vdc, Rise Time IC = 10 madc, IB1 = 1.0 madc) tr 35 ns Storage Time (VCC = 3.0 Vdc, IC = 10 madc, IB1 = IB2 = 1.0 madc) ts 225 db ns Fall Time (VCC = 3.0 Vdc, IC = 10 madc, IB1 = IB2 = 1.0 madc) tf 75 ns 2. Pulse Test: Pulse Width 300 s; Duty Cycle 2%. 2

3 2N3906 * Total shunt capacitance of test jig and connectors Figure 1. Delay and Rise Time Equivalent Test Circuit Figure 2. Storage and Fall Time Equivalent Test Circuit TYPICAL TRANSIENT CHARACTERISTICS Figure 3. Capacitance Figure 4. Charge Data Figure 5. TurnOn Time Figure 6. Fall Time 3

4 TYPICAL AUDIO SMALLSIGNAL CHARACTERISTICS NOISE FIGURE VARIATIONS (VCE = 5.0 Vdc, TA = 25 C, Bandwidth = 1.0 Hz) Figure 7. Figure 8. h PARAMETERS (VCE = 10 Vdc, f = 1.0 khz, TA = 25 C) Figure 9. Current Gain Figure 10. Output Admittance Figure 11. Input Impedance Figure 12. Voltage Feedback Ratio 4

5 TYPICAL STATIC CHARACTERISTICS Figure 13. DC Current Gain Figure 14. Collector Saturation Region Figure 15. ON Voltages Figure 16. Temperature Coefficients 5

6 PACKAGE DIMENSIONS TO92 TO226AA CASE 2911 A ISSUE AL B R P L K X X D G H J V C N SECTION XX N 6

7 Notes 7

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