N Channel Depletion MAXIMUM RATINGS. ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted) OFF CHARACTERISTICS ON CHARACTERISTICS

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1 N Channel Depletion MAXIMUM RATINGS Rating Symbol Value Unit Drain Source Voltage VDS 25 Vdc Drain Gate Voltage VDG 25 Vdc Gate Source Voltage VGS 25 Vdc Forward Gate Current IGF 10 madc Total Device TC = 25 C Derate above 25 C PD mw mw/ C Junction Temperature Range TJ 65 to +150 C Storage Temperature Range Tstg 65 to +150 C CASE 29 11, STYLE 5 TO 92 (TO 226AA) ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Gate Source Breakdown Voltage (IG = 10 µadc, VDS = 0) V(BR)GSS 25 Vdc Gate Reverse Current (VGS = 15 Vdc, VDS = 0) IGSS 1.0 nadc Drain Cutoff Current (VDS = 12 Vdc, VGS = 10 V) Drain Cutoff Current (VDS = 12 Vdc, VGS = 10 V, TA = 100 C) ON CHARACTERISTICS Zero Gate Voltage Drain Current(1) (VDS = 15 Vdc, VGS = 0) Gate Source Forward Voltage (IG(f) = 1.0 madc, VDS = 0) Drain Source On Voltage (ID = 7.0 madc, VGS = 0) Static Drain Source On Resistance (ID = 0.1 madc, VGS = 0) 1. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 3.0%. SMALL SIGNAL CHARACTERISTICS Small Signal Drain Source ON Resistance (VGS = 0, ID = 0, f = 1.0 khz) Input Capacitance (VDS = 15 Vdc, VGS = 0, f = 1.0 MHz) Reverse Transfer Capacitance (VDS = 0, VGS = 10 Vdc, f = 1.0 MHz) SWITCHING CHARACTERISTICS ID(off) nadc µadc IDSS 15 madc VGS(f) 1.0 Vdc VDS(on) 1.5 Vdc rds(on) 150 Ohms rds(on) 150 Ohms Ciss 5.0 pf Crss 1.2 pf Turn On Delay Time (VDD = 10 Vdc, ID(on) = 7.0 madc, td(on) 5.0 ns Rise Time VGS(on) = 0, VGS(off) = 10 Vdc) (See Figure 1) tr 5.0 ns Turn Off Delay Time (VDD = 10 Vdc, ID(on) = 7.0 madc, td(off) 15 ns Fall Time VGS(on) = 0, VGS(off) = 10 Vdc) (See Figure 1) tf 10 ns Semiconductor Components Industries, LLC, 2001 November, 2001 Rev. 3 1 Publication Order Number: 2N5555/D

2 Figure 1. Switching Times Test Circuit COMMON SOURCE CHARACTERISTICS ADMITTANCE PARAMETERS (VDS = 15 Vdc, Tchannel = 25 C) Figure 2. Input Admittance (yis) Figure 3. Reverse Transfer Admittance (yrs) Figure 4. Forward Transadmittance (yfs) Figure 5. Output Admittance (yos) 2

3 COMMON SOURCE CHARACTERISTICS S PARAMETERS (VDS = 15 Vdc, Tchannel = 25 C, Data Points in MHz) Figure 6. S11s Figure 7. S12s Figure 8. S21s Figure 9. S22s 3

4 COMMON GATE CHARACTERISTICS ADMITTANCE PARAMETERS (VDG = 15 Vdc, Tchannel = 25 C) Figure 10. Input Admittance (yig) Figure 11. Reverse Transfer Admittance (yrg) Figure 12. Forward Transfer Admittance (yfg) Figure 13. Output Admittance (yog) 4

5 COMMON GATE CHARACTERISTICS S PARAMETERS (VDS = 15 Vdc, Tchannel = 25 C, Data Points in MHz) Figure 14. S11g Figure 15. S12g Figure 16. S21g Figure 17. S22g 5

6 PACKAGE DIMENSIONS TO 92 (TO 226AA) CASE ISSUE AL A B R P L K X X D G H J V C N SECTION X X N 6

7 Notes 7

8 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. PUBLICATION ORDERING INFORMATION Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado USA Phone: or Toll Free USA/Canada Fax: or Toll Free USA/Canada ONlit@hibbertco.com N. American Technical Support: Toll Free USA/Canada JAPAN: ON Semiconductor, Japan Customer Focus Center Nishi Gotanda, Shinagawa ku, Tokyo, Japan Phone: r14525@onsemi.com ON Semiconductor Website: For additional information, please contact your local Sales Representative. 8 2N5555/D

N Channel Depletion MAXIMUM RATINGS. ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted) OFF CHARACTERISTICS ON CHARACTERISTICS

N Channel Depletion MAXIMUM RATINGS Rating Symbol Value Unit Drain Source Voltage VDS 25 Vdc Drain Gate Voltage VDG 25 Vdc Gate Source Voltage VGS 25 Vdc Gate Current IG 10 madc Total Device Dissipation