GENERAL PURPOSE TRANSISTOR ARRAY

Transcription

1 The MC3346 is designed for general purpose, low power applications for consumer and industrial designs. Guaranteed BaseEmitter Voltage Matching Operating Current Range Specified: 10 µa to 10 ma Five General Purpose Transistors in One Package GENERAL PURPOSE TRANSISTOR ARRAY SEMICONDUCTOR TECHNICAL DATA 14 1 P SUFFIX PLASTIC PACKAGE CASE 646 MAXIMUM RATINGS Rating Symbol Value Unit CollectorEmitter Voltage V CEO 15 Vdc CollectorBase Voltage V CBO 20 Vdc EmitterBase Voltage V EB 5.0 Vdc CollectorSubstrate Voltage V CIO 20 Vdc Collector Current Continuous I C 50 madc Total Power T A = 25 C Derate above 25 C P D W mw/ C Operating Temperature Range T A 40 to +85 C Storage Temperature Range T stg 65 to +150 C Device MC3346D MC3356P 14 1 D SUFFIX PLASTIC PACKAGE CASE 751A (SO14) ORDERING INFORMATION Operating Temperature Range T A = 40 to +85 C Package SO14 Plastic DIP PIN CONNECTIONS Semiconductor Components Industries, LLC, 2001 May, 2001 Rev. 1 1 Publication Order Number: MC3346/D

2 ELECTRICAL CHARACTERISTICS (T A = +25 C, unless otherwise noted.) Characteristics Symbol Min Typ Max Unit STATIC CHARACTERISTICS CollectorBase Breakdown Voltage (I C = 10 µadc) CollectorEmitter Breakdown Voltage (I C = 1.0 madc) CollectorSubstrate Breakdown Voltage (I C = 10 µa) EmitterBase Breakdown Voltage (I E = 10 µadc) CollectorBase Cutoff Current (V CB = 10 Vdc, I E = 0) DC Current Gain (I C = 10 madc, V CE = 3.0 Vdc) (I C = 1.0 madc, V CE = 3.0 Vdc) (I C = 10 µadc, V CE = 3.0 Vdc) BaseEmitter Voltage (V CE = 3.0 Vdc, I E = 1.0 madc) (V CE = 3.0 Vdc, I E = 10 madc) Input Offset Current for Matched Pair Q1 and Q2 Magnitude of Input Offset Voltage Temperature Coefficient of BaseEmitter Voltage Temperature Coefficient CollectorEmitter Cutoff Current (V CE = 10 Vdc, I B = 0) DYNAMIC CHARACTERISTICS Low Frequency Noise Figure (V CE = 3.0 Vdc, I C = 100 µadc, R S = 1.0 kω, f = 1.0 khz) Forward Current Transfer Ratio (V CE = 3.0 Vdc, I C = 1.0 madc, f = 1.0 khz) Short Circuit Input Impedance Open Circuit Output Impedance Reverse Voltage Transfer Ratio Forward Transfer Admittance (V CE = 3.0 Vdc, I C = 1.0 madc, f = 1.0 MHz) Input Admittance (V CE = 3.0 Vdc, I C = 1.0 madc, f = 1.0 MHz) Output Admittance (V CE = 3.0 Vdc, I C = 1.0 madc, f = 1.0 MHz) CurrentGain Bandwidth Product (V CE = 3.0 Vdc, I C = 3.0 madc) EmitterBase Capacitance (V EB = 3.0 Vdc, I E = 0) CollectorBase Capacitance (V CB = 3.0 Vdc, I C = 0) CollectorSubstrate Capacitance (V CS = 3.0 Vdc, I C = 0) V (BR)CBO Vdc V (BR)CEO 15 Vdc V (BR)CIO Vdc V (BR)EBO Vdc I CBO 40 nadc h FE 40 V BE Vdc I IO1 I IO µadc mvdc V BE 1.9 mv/ C V IO 1.0 µv/ C I CEO 0.5 µadc NF 3.25 db h FE 110 h ie 3.5 kω h oe 15.6 µmhos h re 1.8 x10 4 y fe 31j1.5 y ie j0.04 y oe j0.03 f T MHz C eb 0.6 pf C cb 0.58 pf C CI 2.8 pf 2

3 Figure 1. Collector Cutoff Current versus Temperature (Each Transistor) Figure 2. Collector Cutoff Current versus Temperature (Each Transistor) µ Figure 3. Input Offset Characteristics for Q1 and Q2 Figure 4. BaseEmitter and Input Offset Voltage Characteristics Figure 5. DC Current Gain 3

4 PACKAGE DIMENSIONS P SUFFIX PLASTIC PACKAGE CASE ISSUE M T N B A F L C K J H G D 14 PL M 4

5 PACKAGE DIMENSIONS T G A B D 14 PL K P 7 PL C D SUFFIX PLASTIC PACKAGE CASE 751A03 (SO8) ISSUE F R X 45 M J F 5

6 Notes 6

7 Notes 7

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9 This datasheet has been download from: Datasheets for electronics components.