TIP120, TIP121, TIP122,

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1 ... designed for general purpose amplifier and low speed switching applications. High DC Current Gain h FE = 2500 I C = 4.0 Adc Collector Emitter Sustaining 100 madc V CEO(sus) = 60 Vdc (Min) TIP120, TIP125 = 80 Vdc (Min) TIP121, TIP126 = 100 Vdc (Min) TIP122, TIP127 Low Collector Emitter Saturation Voltage V CE(sat) = 2.0 Vdc I C = 3.0 Adc = 4.0 Vdc I C = 5.0 Adc Monolithic Construction with Built In Base Emitter Shunt Resistors TO 220AB Compact Package *MAXIMUM RATINGS ÎÎ TIP120, TIP121, TIP122, Rating Î Symbol TIP125 Î TIP126Î TIP127 Unit Collector Emitter Voltage Î V CEO 60 Î 80 Î 100 Vdc Collector Base Voltage Î V CB 60 Î 80 Î 100 Vdc Emitter Base Voltage V EB 5.0 Vdc ÎÎ Collector Current Continuous I Peak Î C 5.0 Adc Î 8.0 Base Current Î I B Î 120 madc Total Power T C = 25 CÎ P D Î 65 Watts Derate above 25 C 0.52 W/ C ÎÎ Total Power T A = 25 C P Derate above 25 C Î D 2.0 Watts Î W/ C Unclamped Inductive Load Energy (1)Î E Î 50 mj Operating and Storage Junction, Î T J, T stg Î 65 to C Temperature Range ÎÎ THERMAL CHARACTERISTICS ÎÎ Characteristic Symbol Max Unit ÎÎ Thermal Resistance, Junction to Case R θjc Î 1.92 C/W ÎÎ Thermal Resistance, Junction to Ambient R θja Î 62.5 C/W (1) I C = 1 A, L = 100 mh, P.R.F. = 10 Hz, V CC = 20 V, R BE = 100 Ω. *ON Semiconductor Preferred Device DARLINGTON 5 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS VOLTS 65 WATTS CASE 221A 09 TO 220AB Preferred devices are ON Semiconductor recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 April, 2001 Rev. 4 1 Publication Order Number: TIP120/D

2 Figure 1. Power Derating 2

3 ELECTRICAL CHARACTERISTICS (T C = 25 C unless otherwise noted) Characteristic Symbol Min Î Max Unit OFF CHARACTERISTICS Collector Emitter Sustaining Voltage (1) V CEO(sus) Vdc (I C = 100 madc, I B = 0) TIP120, TIP125 ÎÎ 60 Î TIP121, TIP TIP122, TIP127 ÎÎ 100 Î Î Collector Cutoff Current I CEO madc (V CE = 30 Vdc, I B = 0) TIP120, TIP125 ÎÎ (V CE = 40 Vdc, I B = 0) TIP121, TIP126 (V CE = 50 Vdc, I B = 0) TIP122, TIP127 ÎÎ Î Î 0.5 Î Collector Cutoff Current I CBO madc (V CB = 60 Vdc, I E = 0) TIP120, TIP125 (V CB = 80 Vdc, I E = 0) TIP121, TIP126 (V CB = 100 Vdc, I E ÎÎ 0.2 Î 0.2 = 0) TIP122, TIP Î Emitter Cutoff Current I (V BE = 5.0 Vdc, I C = 0) EBO Î 2.0 madc Î ON CHARACTERISTICS (1) DC Current Gain h FE (I C = 0.5 Adc, V CE = 3.0 Vdc) ÎÎ 1000Î (I C = 3.0 Adc, V CE = 3.0 Vdc) 1000 Collector Emitter Saturation Voltage V (I C = 3.0 Adc, I B = 12 madc) CE(sat) Vdc (I C = 5.0 Adc, I B = 20 madc) ÎÎ 2.0 Î 4.0 Base Emitter On Voltage V BE(on) (I C = 3.0 Adc, V CE = 3.0 Vdc) ÎÎ Î 2.5 Î Vdc DYNAMIC CHARACTERISTICS Small Signal Current Gain h (I C = 3.0 Adc, V CE = 4.0 Vdc, f = 1.0 MHz) fe 4.0 Î Î Output Capacitance C ob pf (V CB = 10 Vdc, I E = 0, f = 0.1 MHz TIP125, TIP126, TIP127 TIP120, TIP121, TIP Î (1) Pulse Test: Pulse Width 300 µs, Duty Cycle 2%. µ Figure 2. Switching Times Test Circuit for t d and t r, D 1 is disconnected and V 2 = 0 For NPN test circuit reverse all polarities. µ Figure 3. Switching Times 3

4 θ θ θ θ Figure 4. Thermal Response µ µ Figure 5. Active Region Safe Operating Area There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate I C V CE limits of the transistor that must be observed for reliable operation, i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 5 is based on T J(pk) = 150 C; T C is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided T J(pk) < 150 C. T J(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown Figure 6. Small Signal Current Gain Figure 7. Capacitance 4

5 NPN TIP120, TIP121, TIP122 PNP TIP125, TIP126, TIP127 Figure 8. DC Current Gain Figure 9. Collector Saturation Region Figure 10. On Voltages 5

6 PACKAGE DIMENSIONS TO 220AB CASE 221A 09 ISSUE AA H Q Z L V G B N D A K F T U S R J C T 6

7 Notes 7

8 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. PUBLICATION ORDERING INFORMATION NORTH AMERICA Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado USA Phone: or Toll Free USA/Canada Fax: or Toll Free USA/Canada ONlit@hibbertco.com Fax Response Line: or Toll Free USA/Canada N. American Technical Support: Toll Free USA/Canada EUROPE: LDC for ON Semiconductor European Support German Phone: (+1) (Mon Fri 2:30pm to 7:00pm CET) ONlit german@hibbertco.com French Phone: (+1) (Mon Fri 2:00pm to 7:00pm CET) ONlit french@hibbertco.com English Phone: (+1) (Mon Fri 12:00pm to 5:00pm GMT) ONlit@hibbertco.com EUROPEAN TOLL FREE ACCESS*: *Available from Germany, France, Italy, UK, Ireland CENTRAL/SOUTH AMERICA: Spanish Phone: (Mon Fri 8:00am to 5:00pm MST) ONlit spanish@hibbertco.com Toll Free from Mexico: Dial for Access then Dial ASIA/PACIFIC: LDC for ON Semiconductor Asia Support Phone: (Tue Fri 9:00am to 1:00pm, Hong Kong Time) Toll Free from Hong Kong & Singapore: ONlit asia@hibbertco.com JAPAN: ON Semiconductor, Japan Customer Focus Center Nishi Gotanda, Shinagawa ku, Tokyo, Japan Phone: r14525@onsemi.com ON Semiconductor Website: For additional information, please contact your local Sales Representative. 8 TIP120/D

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