2N3055A MJ AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60, 120 VOLTS 115, 180 WATTS *MAXIMUM RATINGS THERMAL CHARACTERISTICS

Transcription

1 ... PowerBase complementary transistors designed for high power audio, stepping motor and other linear applications. These devices can also be used in power switching circuits such as relay or solenoid drivers, dc to dc converters, inverters, or for inductive loads requiring higher safe operating area than the 2N3055 and MJ2955. Current Gain Bandwidth I C = 1.0 Adc f T = 0.8 MHz (Min) NPN = 2.2 MHz (Min) PNP Safe Operating Area Rated to 60 V and 120 V, Respectively ÎÎ *MAXIMUM RATINGS ÎÎ 2N3055A MJ15015 ÎÎÎ Rating Î Symbol MJ2955A MJ15016 ÎÎÎ Unit ÎÎÎ Collector Emitter Voltage Î V CEO ÎÎÎ Vdc ÎÎÎ Collector Base Voltage Î V CBO ÎÎÎ Vdc ÎÎÎ Collector Emitter Voltage Base V CEV ÎÎ ÎÎÎ Reversed Biased Î Vdc ÎÎÎ Emitter Base Voltage Î V EBO ÎÎÎ 7.0 ÎÎÎ Vdc ÎÎÎ Collector Current Continuous Î I C ÎÎÎ 15 ÎÎÎ Adc ÎÎÎ Base Current I B Î 7.0 Adc ÎÎ Total Device T ÎÎÎ C = 25C P Derate above 25C Î D Watts ÎÎÎ W/C ÎÎÎ Operating and Storage Junction Î T J, T stg ÎÎÎ 65 to +200 ÎÎÎ ÎÎÎ Temperature Range Î C ÎÎ THERMAL CHARACTERISTICS ÎÎ Characteristic Symbol Max Max Unit ÎÎ Thermal Resistance, Junction to Case R ÎÎÎ θjc C/W ÎÎ *Indicates JEDEC Registered Data. (2N3055A) *ON Semiconductor Preferred Device 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60, 120 VOLTS 115, 180 WATTS CASE 1 07 TO 204AA (TO 3) Preferred devices are ON Semiconductor recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 March, 2001 Rev. 3 1 Publication Order Number: 2N3055A/D

2 Figure 1. Power Derating 2

3 Î ELECTRICAL CHARACTERISTICS (T C = 25 C unless otherwise noted) ÎÎÎ Characteristic Symbol Min Max Unit Î OFF CHARACTERISTICS (1) Î *Collector Emitter Sustaining Voltage 2N3055A, MJ2955A V (I C = 200 madc, I B Î CEO(sus) 60 Vdc = 0) MJ15015, MJ Î Collector Cutoff Current I (V CE = 30 Vdc, V BE(off) = 0 Vdc) 2N3055A, MJ2955A Î CEO madc 0.7 (V Î CE = 60 Vdc, V BE(off) = 0 Vdc) MJ15015, MJ ÎÎ *Collector Cutoff Current 2N3055A, MJ2955A Î I CEV 5.0 madc (V CEV = Rated Value, V BE(off) = 1.5 Vdc) MJ15015, MJ Î Collector Cutoff Current I (V CEV = Rated Value, V BE(off) = 1.5 Vdc, 2N3055A, MJ2955A Î CEV madc 30 Î T C = 150C) MJ15015, MJ Emitter Cutoff Current 2N3055A, MJ2955A Î I EBO 5.0 madc (V EB = 7.0 Vdc, I C = 0) MJ15015, MJ Î *SECOND BREAKDOWN Î Second Breakdown Collector Current with Base Forward Biased Î I S/b Adc (t = 0.5 s non repetitive) 2N3055A, MJ2955A 1.95 (V CE = 60 Vdc) MJ15015, MJ Î *ON CHARACTERISTICS (1) DC Current Gain h FE (I C = 4.0 Adc, V CE = 2.0 Vdc) (I Î C = 4.0 Adc, V CE = 4.0 Vdc) (I C = 10 Adc, V CE = 4.0 Vdc) 5.0 Collector Emitter Saturation Voltage V CE(sat) Vdc (I C = 4.0 Adc, I B = 400 madc) 1.1 (I Î C = 10 Adc, I B = 3.3 Adc) 3.0 (I C = 15 Adc, I B ÎÎ = 7.0 Adc) 5.0 ÎÎÎ Base Emitter On Voltage V (I C = 4.0 Adc, V CE = 4.0 Vdc) Î BE(on) Vdc Î *DYNAMIC CHARACTERISTICS Current Gain Bandwidth Product 2N3055A, MJ15015 f T MHz (I C = 1.0 Adc, V CE = 4.0 Vdc, f = 1.0 MHz) MJ2955A, MJ Output Capacitance Î C ob pf (V CB = 10 Vdc, I E = 0, f = 1.0 MHz) ÎÎ Î *SWITCHING CHARACTERISTICS (2N3055A only) Î RESISTIVE LOAD Î Delay Time 0.5 µs Î Rise Time Î Storage Time Î Fall Time (1) Pulse Test: Pulse Width = 300 µs, Duty Cycle 2%. *Indicates JEDEC Registered Data. (2N3055A) t d Î (V CC = 30 Vdc, I C = 4.0 Adc, Î t r 4.0 µs Î I B1 =I B2 =04Adc 0.4 Adc, Î t p = 25 µs Duty Cycle 2% t s 3.0 µs 6.0 µs t f 3

4 Figure 2. DC Current Gain Figure 3. Collector Saturation Region Figure 4. On Voltages Figure 5. Current Gain Bandwidth Product µ Ω Ω µ Figure 6. Switching Times Test Circuit (Circuit shown is for NPN) Figure 7. Turn On Time 4

5 µ Figure 8. Turn Off Times Figure 9. Capacitances µ NPN COLLECTOR CUT OFF REGION µ PNP Figure 10. 2N3055A, MJ15015 Figure 11. MJ2955A, MJ15016 µ µ Figure 12. Forward Bias Safe Operating Area 2N3055A, MJ2955A Figure 13. Forward Bias Safe Operating Area MJ15015, MJ

6 7There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe Operating area curves indicate I C V CE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figures 12 and 13 is based on T C = 25C; T J(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated for temperature according to Figure 1. 6

7 PACKAGE DIMENSIONS CASE 1 07 TO 204AA (TO 3) ISSUE Z V H E 2 1 A N U C D 2 PL K L G Q T Y B 7

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