N Channel Depletion MAXIMUM RATINGS. ELECTRICAL CHARACTERISTICS (T A = 25 C unless otherwise noted) OFF CHARACTERISTICS ON CHARACTERISTICS
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1 N Channel Depletion MAXIMUM RATINGS Rating Symbol Value Unit Drain Source Voltage V DS 25 Vdc Drain Gate Voltage V DG 25 Vdc Gate Source Voltage V GS 25 Vdc Gate Current I G 10 madc Total Device T A = 25 C Derate above 25 C P D mw mw/ C Junction Temperature Range T J 125 C Storage Temperature Range T stg 65 to +150 C CASE 29 11, STYLE 5 TO 92 (TO 226AA) ELECTRICAL CHARACTERISTICS (T A = 25 C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Gate Source Breakdown Voltage (I G = 10 µadc, V DS = 0) V (BR)GSS 25 Vdc Gate Reverse Current (V GS = 15 Vdc, V DS = 0) (V GS = 15 Vdc, V DS = 0, T A = 100 C) Gate Source Cutoff Voltage (V DS = 15 Vdc, I D = 2.0 nadc) Gate Source Voltage (V DS = 15 Vdc, I D = 0.2 madc) ON CHARACTERISTICS Zero Gate Voltage Drain Current (1) (V DS = 15 Vdc, V GS = 0 Vdc) SMALL SIGNAL CHARACTERISTICS Forward Transfer Admittance (1) (V DS = 15 Vdc, V GS = 0, f = 1.0 khz) (V DS = 15 Vdc, V GS = 0, f = 100 MHz) Input Admittance (V DS = 15 Vdc, V GS = 0, f = 100 MHz) Output Conductance (V DS = 15 Vdc, V GS = 0, f = 100 MHz) Input Capacitance (V DS = 15 Vdc, V GS = 0, f = 1.0 MHz) Reverse Transfer Capacitance (V DS = 15 Vdc, V GS = 0, f = 1.0 MHz) I GSS nadc µadc V GS(off) 8.0 Vdc V GS Vdc I DSS madc y fs mhos Re(y is ) 800 mhos Re(y os ) 200 mhos C iss 7.0 pf C rss 3.0 pf 1. Pulse Test; Pulse Width 630 ms, Duty Cycle 10%. Semiconductor Components Industries, LLC, 2001 March, 2001 Rev. 1 1 Publication Order Number: MPF102/D
2 POWER GAIN Figure 1. Effects of Drain Current Ω Adjust V GS for I D = 50 ma V GS < 0 Volts NOTE: Ω The noise source is a hot cold body (AIL type 70 or equivalent) with a test receiver (AIL type 136 or equivalent). Reference VALUE Designation 100 MHz 400 MHz C1 7.0 pf 1.8 pf C pf 17 pf C3 3.0 pf 1.0 pf C pf pf C pf pf C µf µf C µf µf L1 3.0 µh* 0.2 µh** L µh* 0.03 µh** L µh* µh** *L1 17 turns, (approx. depends upon circuit layout) AWG #28 enameled copper wire, close wound on 9/32 ceramic coil form. Tuning provided by a powdered iron slug. *L2 4 1/2 turns, AWG #18 enameled copper wire, 5/16 long, 3/8 I.D. (AIR CORE). *L3 3 1/2 turns, AWG #18 enameled copper wire, 1/4 long, 3/8 I.D. (AIR CORE). Figure MHz and 400 MHz Neutralized Test Circuit **L1 6 turns, (approx. depends upon circuit layout) AWG #24 enameled copper wire, close wound on 7/32 ceramic coil form. Tuning provided by an aluminum slug. **L2 1 turn, AWG #16 enameled copper wire, 3/8 I.D. (AIR CORE). **L3 1/2 turn, AWG #16 enameled copper wire, 1/4 I.D. (AIR CORE). 2
3 NOISE FIGURE (T channel = 25 C) Figure 3. Effects of Drain Source Voltage Figure 4. Effects of Drain Current INTERMODULATION CHARACTERISTICS Figure 5. Third Order Intermodulation Distortion 3
4 COMMON SOURCE CHARACTERISTICS ADMITTANCE PARAMETERS (V DS = 15 Vdc, T channel = 25 C) Figure 6. Input Admittance (y is ) Figure 7. Reverse Transfer Admittance (y rs ) Figure 8. Forward Transadmittance (y fs ) Figure 9. Output Admittance (y os ) 4
5 COMMON SOURCE CHARACTERISTICS S PARAMETERS (V DS = 15 Vdc, T channel = 25 C, Data Points in MHz) Figure 10. S 11s Figure 11. S 12s 5
6 COMMON GATE CHARACTERISTICS ADMITTANCE PARAMETERS (V DG = 15 Vdc, T channel = 25 C) Figure 14. Input Admittance (y ig ) Figure 15. Reverse Transfer Admittance (y rg ) Figure 16. Forward Transfer Admittance (y fg ) Figure 17. Output Admittance (y og ) 6
7 COMMON GATE CHARACTERISTICS S PARAMETERS (V DS = 15 Vdc, T channel = 25 C, Data Points in MHz) Figure 18. S 11g Figure 19. S 12g 7
8 PACKAGE DIMENSIONS TO 92 (TO 226AB) CASE ISSUE AL A B R P L K X X D G H J V C N SECTION X X N ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. PUBLICATION ORDERING INFORMATION NORTH AMERICA Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado USA Phone: or Toll Free USA/Canada Fax: or Toll Free USA/Canada ONlit@hibbertco.com Fax Response Line: or Toll Free USA/Canada N. American Technical Support: Toll Free USA/Canada EUROPE: LDC for ON Semiconductor European Support German Phone: (+1) (Mon Fri 2:30pm to 7:00pm CET) ONlit german@hibbertco.com French Phone: (+1) (Mon Fri 2:00pm to 7:00pm CET) ONlit french@hibbertco.com English Phone: (+1) (Mon Fri 12:00pm to 5:00pm GMT) ONlit@hibbertco.com EUROPEAN TOLL FREE ACCESS*: *Available from Germany, France, Italy, UK, Ireland CENTRAL/SOUTH AMERICA: Spanish Phone: (Mon Fri 8:00am to 5:00pm MST) ONlit spanish@hibbertco.com Toll Free from Mexico: Dial for Access then Dial ASIA/PACIFIC: LDC for ON Semiconductor Asia Support Phone: (Tue Fri 9:00am to 1:00pm, Hong Kong Time) Toll Free from Hong Kong & Singapore: ONlit asia@hibbertco.com JAPAN: ON Semiconductor, Japan Customer Focus Center Nishi Gotanda, Shinagawa ku, Tokyo, Japan Phone: r14525@onsemi.com ON Semiconductor Website: For additional information, please contact your local Sales Representative. 8 MPF102/D
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Overvoltage Transient Suppressor Designed for applications requiring a low voltage rectifier with reverse avalanche characteristics for use as reverse power transient suppressors. Developed to suppress
MARKING DIAGRAMS LOGIC DIAGRAM ORDERING INFORMATION DIP PIN ASSIGNMENT CDIP 16 L SUFFIX CASE 620 MC10124L AWLYYWW
The MC024 is a quad translator for interfacing data and control signals between a saturated logic section and the MECL section of digital systems. The MC024 has TTL compatible inputs, and MECL complementary
NTA4001N, NVA4001N. Small Signal MOSFET. 20 V, 238 ma, Single, N Channel, Gate ESD Protection, SC 75
Small Signal MOSFET V, 8 ma, Single, N Channel, Gate ESD Protection, SC 75 Features Low Gate Charge for Fast Switching Small.6 x.6 mm Footprint ESD Protected Gate AEC Q Qualified and PPAP Capable NVA4N
MARKING DIAGRAMS LOGIC DIAGRAM ORDERING INFORMATION DIP PIN ASSIGNMENT CDIP 16 L SUFFIX CASE 620 MC10216L AWLYYWW
The MC1016 is a high speed triple differential amplifier designed for use in sensing differential signals over long lines. The base bias supply (V BB ) is made available at pin 11 to make the device useful
ELECTRICAL CHARACTERISTICS (T C = 25 C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS (1) Drain Source Breakdown V
SEMICONDUCTOR TECHNICAL DATA Order this document by /D The RF MOSFET Line N Channel Enhancement Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 800
PIN CONNECTIONS MAXIMUM RATINGS (T J = 25 C unless otherwise noted) SC 75 (3 Leads) Parameter Symbol Value Unit Drain to Source Voltage V DSS 30 V
NTA7N, NVTA7N Small Signal MOSFET V, 4 ma, Single, N Channel, Gate ESD Protection, SC 7 Features Low Gate Charge for Fast Switching Small.6 x.6 mm Footprint ESD Protected Gate NV Prefix for Automotive
NPN Silicon. MAXIMUM RATINGS MARKING DIAGRAMS. THERMAL CHARACTERISTICS (Note 1.) ORDERING INFORMATION
is a Preferred Device NPN Silicon MAXIMUM RATINGS Rating Symbol Value Unit CollectorEmitter Voltage VCEO 40 Vdc CollectorBase Voltage VCBO 60 Vdc EmitterBase Voltage VEBO 6.0 Vdc Collector Current Continuous
NTGS3441BT1G. Power MOSFET. -20 V, -3.5 A, Single P-Channel, TSOP-6. Low R DS(on) in TSOP-6 Package 2.5 V Gate Rating This is a Pb-Free Device
Power MOSFET - V, -. A, Single P-Channel, TSOP- Features Low R DS(on) in TSOP- Package. V Gate Rating This is a Pb-Free Device Applications Battery Switch and Load Management Applications in Portable Equipment
Unidirectional*
Unidirectional* Mosorb devices are designed to protect voltage sensitive components from high voltage, high energy transients. They have excellent clamping capability, high surge capability, low zener
BAV70DXV6T1, BAV70DXV6T5 Preferred Device. Monolithic Dual Switching Diode Common Cathode. Lead-Free Solder Plating.
BAV70DXV6T1, BAV70DXV6T5 Preferred Device Monolithic Dual Switching Diode Common Cathode LeadFree Solder Plating MAXIMUM RATINGS (EACH DIODE) Rating Symbol Value Unit Reverse Voltage V R 70 Vdc Forward
1 Block HV2 LDMOS Device Number of fingers: 56, Periphery: 5.04 mm Frequency: 1 GHz, V DS. =26 v & I DS
Number of fingers: 56, Periphery: 5.4 mm =2. ma/mm 5 ohm Termination Output Power at Fundamental vs. 4 11 Transducer Gain vs. Output Power at Fundamental 3 1-1 Transducer Gain 1 9 7 6 - -3 - -1 1 3 4 5-3
MC14538B. MARKING DIAGRAMS. MAXIMUM RATINGS (Voltages Referenced to V SS ) (Note 2.) ORDERING INFORMATION
The MC14538B is a dual, retriggerable, resettable monostable multivibrator. It may be triggered from either edge of an input pulse, and produces an accurate output pulse over a wide range of widths, the
ORDERING INFORMATION MAXIMUM RATINGS AXIAL LEAD CASE 41A PLASTIC MPTE 1N 63xx YYWW ICTE YYWW
Unidirectional* Mosorb devices are designed to protect voltage sensitive components from high voltage, high energy transients. They have excellent clamping capability, high surge capability, low zener
NTNS3164NZT5G. Small Signal MOSFET. 20 V, 361 ma, Single N Channel, SOT 883 (XDFN3) 1.0 x 0.6 x 0.4 mm Package
NTNS36NZ Small Signal MOSFET V, 36 ma, Single N Channel, SOT 883 (XDFN3). x.6 x. mm Package Features Single N Channel MOSFET Ultra Low Profile SOT 883 (XDFN3). x.6 x. mm for Extremely Thin Environments
PNP Silicon. MAXIMUM RATINGS MARKING DIAGRAMS. THERMAL CHARACTERISTICS (Note 1.) ORDERING INFORMATION
Preferred Device PNP Silicon MAXIMUM RATINGS Rating Symbol Value Unit CollectorEmitter Voltage VCEO 40 Vdc CollectorBase Voltage VCBO 40 Vdc EmitterBase Voltage VEBO 5.0 Vdc Collector Current Continuous
MJE18008 MJF NPN Bipolar Power Transistor For Switching Power Supply Applications
NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE/MJF18008 have an applications specific state of the art die designed for use in 220 V line operated Switchmode Power supplies
pf, 30 Volts Voltage Variable Capacitance Diodes
6.8 100 pf, 30 Volts Voltage Variable Capacitance Diodes These devices are designed in popular plastic packages for the high volume requirements of FM Radio and TV tuning and AFC, general frequency control
NST3906DXV6T1, NST3906DXV6T5. Dual General Purpose Transistor
NST396DXV6T1, NST396DXV6T5 Dual General Purpose Transistor The NST396DXV6T1 device is a spin off of our popular SOT23/SOT323 threeleaded device. It is designed for general purpose amplifier applications
NTJS4405N, NVJS4405N. Small Signal MOSFET. 25 V, 1.2 A, Single, N Channel, SC 88
NTJSN, NVJSN Small Signal MOSFET V,. A, Single, N Channel, SC 88 Features Advance Planar Technology for Fast Switching, Low R DS(on) Higher Efficiency Extending Battery Life AEC Q Qualified and PPAP Capable
NVLJD4007NZTBG. Small Signal MOSFET. 30 V, 245 ma, Dual, N Channel, Gate ESD Protection, 2x2 WDFN Package
NVLJD7NZ Small Signal MOSFET V, 2 ma, Dual, N Channel, Gate ESD Protection, 2x2 WDFN Package Features Optimized Layout for Excellent High Speed Signal Integrity Low Gate Charge for Fast Switching Small
ELECTRICAL CHARACTERISTICS continued (T C = 25 C unless otherwise noted) ON CHARACTERISTICS Gate Threshold Voltage (V DS = 10 Vdc, I D = 100 µa) Chara
SEMICONDUCTOR TECHNICAL DATA Order this document by MRF182/D The RF MOSFET Line N Channel Enhancement Mode Lateral MOSFETs High Gain, Rugged Device Broadband Performance from HF to 1 GHz Bottom Side Source
NTS4172NT1G. Power MOSFET. 30 V, 1.7 A, Single N Channel, SC 70. Low On Resistance Low Gate Threshold Voltage Halide Free This is a Pb Free Device
Power MOSFET V,.7 A, Single N Channel, SC 7 Features Low On Resistance Low Gate Threshold Voltage Halide Free This is a Pb Free Device V (BR)DSS R DS(on) MAX I D MAX Applications Low Side Load Switch DC
NSTB1005DXV5T1, NSTB1005DXV5T5. Dual Common Base Collector Bias Resistor Transistors
NSTB005DXV5T, NSTB005DXV5T5 Preferred Devices Dual Common Base Collector Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor
NTMD4184PFR2G. Power MOSFET and Schottky Diode -30 V, -4.0 A, Single P-Channel with 20 V, 2.2 A, Schottky Barrier Diode Features
NTMDPF Power MOSFET and Schottky Diode -3 V, -. A, Single P-Channel with V,. A, Schottky Barrier Diode Features FETKY Surface Mount Package Saves Board Space Independent Pin-Out for MOSFET and Schottky
16 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 250 VOLTS 200 WATTS
Preferred Devices The MJW21193 and MJW21194 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. Total Harmonic
NTGD4167C. Power MOSFET Complementary, 30 V, +2.9/ 2.2 A, TSOP 6 Dual
Power MOSFET Complementary, 3 V, +.9/. A, TSOP 6 Dual Features Complementary N Channel and P Channel MOSFET Small Size (3 x 3 mm) Dual TSOP 6 Package Leading Edge Trench Technology for Low On Resistance
TIP31, TIP31A, TIP31B, TIP31C, (NPN), TIP32, TIP32A, TIP32B, TIP32C, (PNP) Complementary Silicon Plastic Power Transistors
TIP31, TIP31A, TIP31B, TIP31C, (NPN), TIP32, TIP32A, TIP32B, TIP32C, (PNP) Complementary Silicon Plastic Power Transistors Designed for use in general purpose amplifier and switching applications. CollectorEmitter
DEMONSTRATION NOTE. Figure 1. CS51411/3 Demonstration Board. 1 Publication Order Number: CS51411DEMO/D
DEMONSTRATION NOTE Description The CS51411 demonstration board is a 1.0 A/3.3 V buck regulator running at 260 khz (CS51411) or 520 khz (CS51413). The switching frequency can be synchronized to a higher
NTS4173PT1G. Power MOSFET. 30 V, 1.3 A, Single P Channel, SC 70
NTS17P Power MOSFET V, 1. A, Single P Channel, SC 7 Features V BV ds, Low R DS(on) in SC 7 Package Low Threshold Voltage Fast Switching Speed This is a Halide Free Device This is a Pb Free Device Applications