1 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 40, 60, VOLTS 30 WATTS

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1 ... designed for use in general purpose amplifier and switching applications. Compact TO220 AB package. ÎÎ MAXIMUM RATINGS TIP29 TIP29A TIP29B TIP29C Rating Symbol 9 Î TIP30 TIP30A TIP30B TIP30C Unit CollectorEmitter Î V CEO Voltage ÎÎ 100 CollectorBaseÎ V CB 40 Î Voltage EmitterBase V EB 5.0 Voltage Collector Current Î I C Adc Continuous 1.0 Peak Î 3.0 Base Current Î I B Î 0.4 Adc Total Power Î P D T C = 25 C Î 30 Derate above Î 0.24 Watts W/ C 25 C Total Power P D T A = 25 C 2.0 Watts Derate above W/ C 25 C Unclamped Î E Î 32 Inductive Load Energy (Note 1) Î mj Operating and Î T J, T stg Î 65 to +150 C Storage Junction ÎÎ Temperature Range ÎÎ THERMAL CHARACTERISTICS Î Characteristic Î Symbol Max Unit Î Thermal Resistance, JunctiontoAmbient Î R θja Î Thermal Resistance, JunctiontoCase Î R θjc 62.5 C/W C/W 1. This rating based on testing with L C = 20 mh, R BE = 100 Ω, V CC = 10 V, I C = 1.8 A, P.R.F = 10 Hz. 1 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 40, 60, VOLTS 30 WATTS TO220AB CASE 221A09 STYLE 1 xxx A Y WW MARKING DIAGRAM AYWW TIPxxx = Specific Device Code: 29, 29A, 29B, 29C, 30, 30A, 30B, 30C = Assembly Location = Year = Work Week ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2 June, 2 Rev. 7 1 Publication Order Number: TIP29B/D

2 ELECTRICAL CHARACTERISTICS (T C = 25 C unless otherwise noted) Î Characteristic Symbol Min Î Max Î Unit OFF CHARACTERISTICS Î CollectorEmitter Sustaining Voltage (I C = 30 madc, I B = 0) (Note 2) V CEO(sus) TIP29, TIP30 40 Î TIP29A, TIP30A 60 Î Î Î TIP29B, TIP30B 80 Î Î TIP29C, TIP30C 100 Collector Cutoff Current I CEO madc Î (V CE = 30, I B = 0) TIP29, TIP29A, TIP30, TIP30A Î 0.3 Î (V CE = 60, I B = 0) TIP29B, TIP29C, TIP30B, TIP30C 0.3 Collector Cutoff Current I Î (V CE = 40, V EB = 0) TIP29, TIP30 CES µadc Î (V CE = 60, V EB = 0) TIP29A, TIP30A Î Î (V Î CE = 80, V EB = 0) TIP29B, TIP30B (V CE = 100, V EB = 0) TIP29C, TIP30C Î Emitter Cutoff Current (V BE = 5.0, I C = 0) I EBO Î 1.0 Î madc ON CHARACTERISTICS (Note 2) Î DC Current Gain (I C = 0.2 Adc, V CE = 4.0 ) h FE 40 Î Î DC Current Gain (I C = 1.0 Adc, V CE = 4.0 ) CollectorEmitter Saturation Voltage (I C = 1.0 Adc, I B = 125 madc) V CE(sat) 0.7 BaseEmitter On Voltage (I C = 1.0 Adc, V CE = 4.0 ) V BE(on) 1.3 DYNAMIC CHARACTERISTICS Î CurrentGain Bandwidth Product (Note 3) f T 3.0 Î Î MHz Î (I C = madc, V CE = 10, f test = 1.0 MHz) Î SmallSignal Current Gain (I C = 0.2 Adc, V CE = 10, f = 1.0 khz) h fe 20 Î Î 2. Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%. 3. f T = h fe f test. TIP29 TIP29A TIP29B TIP29C TIP30 TIP30A TIP30B TIP30C ORDERING INFORMATION Device Package Shipping TO220AB 50 Units/Rail 2

3 µ Figure 1. DC Current Gain Figure 2. TurnOff Time µ µ Figure 3. Switching Time Equivalent Circuit Figure 4. TurnOn Time There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate I C V CE operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 5 is based on T J(pk) = 150 C; T C is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided T J(pk) 150 C. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. Figure 5. Active Region Safe Operating Area 3

4 PACKAGE DIMENSIONS TO220AB CASE 221A09 ISSUE AA H Q Z L V G B N D A K F T U S R J C T ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. PUBLICATION ORDERING INFORMATION Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado USA Phone: or Toll Free USA/Canada Fax: or Toll Free USA/Canada ONlit@hibbertco.com N. American Technical Support: Toll Free USA/Canada JAPAN: ON Semiconductor, Japan Customer Focus Center 4321 NishiGotanda, Shinagawaku, Tokyo, Japan Phone: r14525@onsemi.com ON Semiconductor Website: For additional information, please contact your local Sales Representative. 4 TIP29B/D

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