TIP31, TIP31A, TIP31B, TIP31C, (NPN), TIP32, TIP32A, TIP32B, TIP32C, (PNP) Complementary Silicon Plastic Power Transistors

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TIP31, TIP31A, TIP31B, TIP31C, (NPN), TIP32, TIP32A, TIP32B, TIP32C, (PNP) Complementary Silicon Plastic Power Transistors Designed for use in general purpose amplifier and switching applications.

1 TIP31, TIP31A, TIP31B, TIP31C, (NPN), TIP32, TIP32A, TIP32B, TIP32C, (PNP) Complementary Silicon Plastic Power Transistors Designed for use in general purpose amplifier and switching applications. CollectorEmitter Saturation Voltage V CE(sat) = 1.2 Vdc I C = 3. Adc CollectorEmitter Sustaining Voltage V CEO(sus) = 4 Vdc (Min) TIP31, TIP32 = 6 Vdc (Min) TIP31A, TIP32A = 8 Vdc (Min) TIP31B, TIP32B = 1 Vdc (Min) 3 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 4681 VOLTS 4 WATTS High Current Gain Bandwidth Product f T = 3. MHz I C = 5 madc Compact TO22 AB Package 4 MARKING DIAGRAM MAXIMUM RATINGS Rating Symbol Value Unit Î CollectorEmitter Voltage TIP31, TIP32 V TIP31A, TIP32A CEO 4 Vdc Î 6 TIP31B, TIP32B 8 1 Î CollectorBase Voltage TIP31, TIP32 V TIP31A, TIP32A CB 4 Vdc Î 6 TIP31B, TIP32B 8 1 ÎÎ EmitterBase Voltage V EB 5. Vdc Î Collector Current Continuous Peak I C Î Adc ÎÎ Base Current IB Î Adc ÎÎ Total Power T C = 25 C P D Î 4 Watts Derate above 25 C.32 W/ C Î Total Power Dissipation T A = 25 C D Derate above 25 C.16 Watts W/ C ÎÎ Unclamped Inductive E Î 32 mj Load Energy (Note 1) ÎÎ Î Operating and Storage Junction T ÎÎ J, T stg 65 to C Temperature Range I C = 1.8 A, L = 2 mh, P.R.F. = 1 Hz, V CC = 1 V, R BE = 1 Ω xxx A Y WW STYLE 1: PIN 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR TO22AB CASE 221A9 STYLE 1 AYWW TIPxxx = Specific Device Code: 31, 31A, 31B, 31C, 32, 32A, 32B, 32C = Assembly Location = Year = Work Week ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 6 of this data sheet. Semiconductor Components Industries, LLC, 23 January, 23 Rev. 8 1 Publication Order Number: TIP31A/D

2 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit ÎÎ Thermal Resistance, Junction to Ambient R θja ÎÎ 62.5 C/W ÎÎ ÎÎ Î Thermal Resistance, Junction to Case R θjc Î C/W ELECTRICAL CHARACTERISTICS (T C = 25 C unless otherwise noted) Î Characteristic ÎÎ Symbol Min Î Max Unit OFF CHARACTERISTICS Î CollectorEmitter Sustaining Voltage (Note 2) TIP31, TIP32 ÎÎ V CEO(sus) 4 Î Vdc (I Î C = 3 madc, I B = ) TIP31A, TIP32A 6 TIP31B, TIP32B Î 8 Î Î Î 1Î Collector Cutoff Current (V CE = 3 Vdc, I B = ) TIP31, TIP32, TIP31A, TIP32A I CEO.3 madc Î Î Collector Cutoff Current (V CE = 6 Vdc, I B = ) TIP31B, TIP31C, TIP32B, TIP32C Î.3 ÎÎ Collector Cutoff Current I CES ÎÎ µadc Î (V CE = 4 Vdc, V EB = ) TIP31, TIP32 Î Î 2 (V CE = 6 Vdc, V EB = ) TIP31A, TIP32A 2 (V CE = 8 Vdc, V EB = ) TIP31B, TIP32B 2 (V CE = 1 Vdc, V EB = ) Î Î 2 Î Emitter Cutoff Current (V BE = 5. Vdc, I C = ) ÎÎ I EBO Î madc ON CHARACTERISTICS (Note 2) DC Current Gain (I Î C = Adc, V CE = 4. Vdc) h DC Current Gain (I C = 3. Adc, V CE = 4. Vdc) ÎÎ FE 25 1 Î 5 Î CollectorEmitter Saturation Voltage (I C = 3. Adc, I B = 375 madc) ÎÎ V CE(sat) Î 1.2 Vdc Î BaseEmitter On Voltage (I C = 3. Adc, V CE = 4. Vdc) ÎÎ V BE(on) Î 1.8 Vdc DYNAMIC CHARACTERISTICS CurrentGain Bandwidth Product (I C = 5 madc, V CE = 1 Vdc, f test = MHz) f T 3. MHz Î SmallSignal Current Gain (I C =.5 Adc, V CE = 1 Vdc, f = khz) 2 Î 2. Pulse Test: Pulse Width 3 µs, Duty Cycle %. h fe 2

3 P D, POWER DISSIPATION (WATTS) T C T A 4. T C 3. T A T, TEMPERATURE ( C) Figure 1. Power Derating 16 TURNON PULSE APPROX +11 V V in V EB(off) t 1 APPROX +11 V V in t 3 V CC V in t 1 7. ns 1 < t 2 < 5 µs t 3 < 15 ns t 2 DUTY CYCLE % TURNOFF PULSE APPROX 9. V R B and R C VARIED TO OBTAIN DESIRED CURRENT LEVELS. R B R C C jd << C eb 4. V Figure 2. Switching Time Equivalent Circuit SCOPE t, TIME ( s) t V CC = 3 V t V CC = 1 V Figure 3. TurnOn Time I C /I B = 1 t V EB(off) = V 3

4 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) D = SINGLE PULSE t, TIME (ms) Figure 4. Thermal Response Z θjc(t) = r(t) R θjc R θjc (t) = C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t 1 T J(pk) T C = P (pk) Z θjc(t) P (pk) t 1 t 2 DUTY CYCLE, D = t 1 /t 2 k ms 1 µs ms SECONDARY BREAKDOWN T J 15 C.5 THERMAL T C = 25 C (SINGLE PULSE) BONDING WIRE LIMIT.2 CURVES APPLY TIP31A, TIP32A BELOW RATED V TIP31B, TIP32B CEO V CE, COLLECTOREMITTER VOLTAGE (VOLTS) There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate I C V CE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 5 is based on T J(pk) = 15 C; T C is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 1% provided T J(pk) 15 C. T J(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. Figure 5. Active Region Safe Operating Area t, TIME ( s) µ t V CC = 3 V t V CC = 1 V t s I B1 = I B2 I C /I B = 1 t s = t s 1/8 t f CAPACITANCE (pf) V R, REVERSE VOLTAGE (VOLTS) C eb T J = + 25 C C cb Figure 6. TurnOff Time Figure 7. Capacitance 4

5 hfe, DC CURRENT GAIN T J = 15 C V CE = V 25 C 55 C VCE, COLLECTOR EMITTER VOLTAGE (VOLTS) I C =.3 A A 3. A I B, BASE CURRENT (ma) Figure 8. DC Current Gain Figure 9. Collector Saturation Region V, VOLTAGE (VOLTS) V I C /I B = 1.6 V V CE = V.4.2 V I C /I B = I C, COLLECTOR CURRENT (AMPS) Figure 1. On Voltages V, TEMPERATURE COEFFICIENTS (mv/ C) θ *APPLIES FOR I C /I B h FE /2 T J = 65 C TO + 15 C *θ VC FOR V CE(sat) θ VB FOR V BE Figure 11. Temperature Coefficients, COLLECTOR CURRENT ( A) µ IC V CE = 3 V T J = 15 C 1 C REVERSE FORWARD 25 C I CES R BE, EXTERNAL BASE EMITTER RESISTANCE (OHMS) I C I CES I C = 2 x I CES I C = 1 x I CES (TYPICAL I CES VALUES OBTAINED FROM FIGURE 12) V CE = 3 V V BE, BASEEMITTER VOLTAGE (VOLTS) T J, JUNCTION TEMPERATURE ( C) Figure 12. Collector CutOff Region Figure 13. Effects of BaseEmitter Resistance 5

6 ORDERING INFORMATION Device Package Shipping TIP31 TO22AB 5 Units/Rail TIP31A TO22AB 5 Units/Rail TIP31B TO22AB 5 Units/Rail TIP31C TO22AB 5 Units/Rail TIP32 TO22AB 5 Units/Rail TIP32A TO22AB 5 Units/Rail TIP32B TO22AB 5 Units/Rail TIP32C TO22AB 5 Units/Rail PACKAGE DIMENSIONS TO22AB CASE 221A9 ISSUE AA H Q Z L V G B N D A K F T U S R J C T SEATING PLANE STYLE 1: PIN 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. INCHES MILLIMETERS DIM MIN MAX MIN MAX A B C D F G H J K L N Q R S T U V Z.8 4 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. PUBLICATION ORDERING INFORMATION Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 8217 USA Phone: or Toll Free USA/Canada Fax: or Toll Free USA/Canada ONlit@hibbertco.com N. American Technical Support: Toll Free USA/Canada JAPAN: ON Semiconductor, Japan Customer Focus Center 291 Kamimeguro, Meguroku, Tokyo, Japan Phone: r14525@onsemi.com ON Semiconductor Website: For additional information, please contact your local Sales Representative. 6 TIP31A/D

1 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 40, 60, VOLTS 30 WATTS

1 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 40, 60, VOLTS 30 WATTS ... designed for use in general purpose amplifier and switching applications. Compact TO220 AB package. ÎÎ MAXIMUM RATINGS TIP29 TIP29A TIP29B TIP29C Rating Symbol 9 Î TIP30 TIP30A TIP30B TIP30C Unit CollectorEmitter