MD9 (PNP) MD3 (NPN) ÎÎ ELECTRICAL CHARACTERISTICS (T C = C unless otherwise noted) ÎÎÎ Characteristic Symbol Min Max Unit ÎÎ OFF CHARACTERISTICS Î Col

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1 MD9 (PNP) MD3 (NPN) Complementary Power Transistors For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) Straight Lead ersion in Plastic Sleeves ( Suffix) Electrically Similar to ME9 and ME3 DC Current Gain Specified to Amperes High Current Gain Bandwidth Product f T =. MHz I C = madc Epoxy Meets UL in ESD Ratings: Human Body Model, 3B 8 Machine Model, C Pb Free Packages are Available Collector Emitter oltage CEO 6 dc Collector Base oltage CB 7 dc Emitter Base oltage EB dc Collector Current I C Adc Base Current I B 6 Adc Total Power T C = C Derate above C Total Power Dissipation T A = C Derate above C Operating and Storage unction Temperature Range P D.6 P D.7. Safe Area Curves are indicated by Figure. Both limits are applicable and must be observed.. These ratings are applicable when surface mounted on the minimum pad sizes recommended. Semiconductor Components Industries, LLC, 6 Publication Order Number: anuary, 6 Rev. 8 MD9/D W W/ C W W/ C T, T stg to + C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, unction to Case R C 6. C/W Thermal Resistance, unction to Ambient R A 7. C/W (Note) Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. SILICON POWER TRANSISTORS AMPERES 6 OLTS, WATTS 3 CASE 369C STYLE MAXIMUM RATINGS Rating Symbol Max Unit 3 3 CASE 369D STYLE MARKING DIAGRAMS YWW xxg Y = Year WW = Work Week xx = Device Code x = 9 or 3 G = Pb Free Package YWW xxg ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page of this data sheet.

2 MD9 (PNP) MD3 (NPN) ÎÎ ELECTRICAL CHARACTERISTICS (T C = C unless otherwise noted) ÎÎÎ Characteristic Symbol Min Max Unit ÎÎ OFF CHARACTERISTICS Î Collector Emitter Sustaining oltage (Note ) (I C = 3 madc, I B = ) CEO(sus) ÎÎÎ 6 ÎÎÎ ÎÎ dc Collector Cutoff Current ( CE = 3 dc, I B = ) I CEO ÎÎÎ ÎÎÎ Adc ÎÎÎ Collector Cutoff Current I CEX madc ( CE = 7 dc, EB(off) =. dc) ÎÎ. ÎÎÎ ( CE = 7 dc, EB(off) =. dc, T C = C) ÎÎ Collector Cutoff Current I ( CB = 7 dc, I E = ) CBO madc ( CB = 7 dc, I E =, T C = C) ÎÎ. ÎÎÎ Emitter Cutoff Current ( BE = dc, I C = ) I EBO ÎÎÎ ÎÎÎ madc ÎÎ ON CHARACTERISTICS DC Current Gain (Note ) h FE (I C = Adc, CE = dc) (I C = Adc, CE = dc) ÎÎ ÎÎÎ ÎÎ Collector Emitter Saturation oltage (Note ) (I C = Adc, I B =. Adc) CE(sat) dc ÎÎ (I C = Adc, I B = 3.3 Adc) ÎÎ. ÎÎÎ 8 ÎÎ Base Emitter On oltage (Note ) (I C = Adc, CE BE(on) ÎÎÎ.8 ÎÎÎ dc = dc) ÎÎ DYNAMIC CHARACTERISTICS Î Current Gain Bandwidth Product f (I C = madc, CE = dc, f = khz) T ÎÎÎ ÎÎÎ ÎÎ MHz. Pulse Test: Pulse Width 3 s, Duty Cycle %. ORDERING INFORMATION MD9 MD9G MD9 MD9 G Device Package Type Package Shipping 3 369C 369D 7 Units / Rail MD9T MD9TG Tape & Reel MD3 MD3G 369C 7 Units / Rail MD3T MD3TG Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8/D.

3 MD9 (PNP) MD3 (NPN) TYPICAL CHARACTERISTICS T A. T C P D, POWER DISSIPATION (WATTS). T C T A SURFACE MOUNT 7 T, TEMPERATURE ( C) Figure. Power Derating h FE, DC CURRENT GAIN 3 CE = T = C T = C.7 CC = 3 I C /I B = C.3 t r C t BE(off) t, TIME ( s) μ Figure. DC Current Gain Figure 3. Turn On Time, OLTAGE (OLTS) T = C I C /I B = CE = t, TIME ( s) μ t s t f T = C CC = 3 I C /I B = I B = I B. I C /I B = Figure. On oltages, MD Figure. Turn Off Time 3

4 MD9 (PNP) MD3 (NPN), OLTAGE (OLTS) T = C I C /I B = CE = 3 I C /I B = s t r, t f ns DUTY CYCLE = % R B D CC + 3 R B and R C ARIED TO OBTAIN DESIRED CURRENT LEELS R C SCOPE D MUST BE FAST RECOERY TYPE, eg: МN8 USED ABOE I B ma МMSD6 USED BELOW I B ma Figure 6. On oltages, MD9 Figure 7. Switching Time Test Circuit r(t), EFFECTIE TRANSIENT THERMAL RESISTANCE (NORMALIZED) D =. P R C(t) = r(t) R (pk). C R C = 6. C/W MAX D CURES APPLY FOR POWER. PULSE TRAIN SHOWN t READ TIME AT t t. T (pk) T C = P (pk) C(t) DUTY CYCLE, D = t /t SINGLE PULSE t, TIME (ms) Figure 8. Thermal Response k IC, COLLECTOR CURRENT (AMP) T = C s ms ms WIRE BOND LIMIT THERMAL LIMIT T C = C (D =.) SECOND BREAKDOWN LIMIT CE, COLLECTOR EMITTER OLTAGE (OLTS) Figure 9. Maximum Forward Bias Safe Operating Area s dc FORWARD BIAS SAFE OPERATING AREA INFORMATION There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate I C CE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 9 is based on T (pk) = C; T C is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to % provided T (pk) C. T (pk) may be calculated from the data in Figure 8. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown.

5 MD9 (PNP) MD3 (NPN) PACKAGE DIMENSIONS CASE 369C ISSUE O B C T SEATING PLANE NOTES:. DIMENSIONING AND TOLERANCING PER ANSI Y.M, 98.. CONTROLLING DIMENSION: INCH. S F R 3 G L A K D PL H.3 (.) M T E U Z INCHES MILLIMETERS DIM MIN MAX MIN MAX A B C D E F G.8 BSC.8 BSC H K L.9 BSC.9 BSC R.8.7. S..63. U Z 3.93 STYLE : PIN. BASE. COLLECTOR 3. EMITTER. COLLECTOR SOLDERING FOOTPRINT* SCALE 3: mm inches *For additional information on our Pb Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

6 MD9 (PNP) MD3 (NPN) PACKAGE DIMENSIONS 3 CASE 369D ISSUE B B R C E NOTES:. DIMENSIONING AND TOLERANCING PER ANSI Y.M, 98.. CONTROLLING DIMENSION: INCH. S T SEATING PLANE F 3 G A K D 3 PL.3 (.) M T H Z INCHES MILLIMETERS DIM MIN MAX MIN MAX A B C D E F G.9 BSC.9 BSC H K R.8.. S Z 3.93 STYLE : PIN. BASE. COLLECTOR 3. EMITTER. COLLECTOR ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 63, Phoenix, Arizona 88 3 USA Phone: or Toll Free USA/Canada Fax: or Toll Free USA/Canada orderlit@onsemi.com N. American Technical Support: Toll Free USA/Canada apan: ON Semiconductor, apan Customer Focus Center 9 Kamimeguro, Meguro ku, Tokyo, apan 3 Phone: ON Semiconductor Website: Order Literature: For additional information, please contact your local Sales Representative. MD9/D

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