DPAK Surface Mount Package
|
|
|
- Judith Ray
- 5 years ago
- Views:
Transcription
1 MBRD620CT, MBRD640CT and MBRD660CT are Preferred Devices DPAK Surface Mount Package...in switching power supplies, inverters and as free wheeling diodes, these state of the art devices have the following features: Extremely Fast Switching Extremely Low Forward Drop Platinum Barrier with Avalanche Guardrings Mechanical Characteristics: Case: Epoxy, Molded Weight: 0.4 gram (approximately) Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead and Mounting Surface Temperature for Soldering Purposes: 260 C Max. for 10 Seconds Shipped 75 units per plastic tube Available in 16 mm Tape and Reel, 2500 units per reel, by adding a T4 suffix to the part number Marking: B620T, B630T, B640T, B650T, B660T MAXIMUM RATINGS Please See the Table on the Following Page 1 3 DPAK CASE 369A PLASTIC SCHOTTKY BARRIER RECTIFIERS 6.0 AMPERES 20 TO 60 VOLTS 4 MARKING DIAGRAM ORDERING INFORMATION B6x0T B6x0T = Device Code x = 2, 3, 4, 5 or 6 Device Package Shipping MBRD620CTT4 DPAK 2500/Tape & Reel MBRD630CTT4 DPAK 2500/Tape & Reel MBRD640CTT4 DPAK 2500/Tape & Reel MBRD650CT DPAK 75 Units/Rail MBRD650CTT4 DPAK 2500/Tape & Reel MBRD660CT DPAK 75 Units/Rail MBRD660CTRL DPAK 1800/Tape & Reel MBRD660CTT4 DPAK 2500/Tape & Reel Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2000 October, 2000 Rev. 2 1 Publication Order Number: MBRD620CT/D
2 MAXIMUM RATINGS Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Rating Average Rectified Forward Current T C = 130 C (Rated V R ) Peak Repetitive Forward Current, T C = 130 C (Rated V R, Square Wave, 20 khz) Per Diode Per Diode Per Device Symbol V RRM V RWM V R MBRD 620CT 630CT 640CT 650CT 660CT Unit Volts I F(AV) 3 6 Amps I FRM 6 Amps Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) I FSM 75 Amps Peak Repetitive Reverse Surge Current (2 µs, 1 khz) I RRM 1 Amp Operating Junction Temperature T J 65 to +150 C Storage Temperature T stg 65 to +175 C Voltage Rate of Change (Rated V R ) dv/dt 10,000 V/µs THERMAL CHARACTERISTICS PER DIODE Maximum Thermal Resistance, Junction to Case R θjc 6 C/W Maximum Thermal Resistance, Junction to Ambient (Note 1.) R θja 80 C/W ELECTRICAL CHARACTERISTICS PER DIODE Maximum Instantaneous Forward Voltage (Note 2.) i F = 3 Amps, T C = 25 C i F = 3 Amps, T C = 125 C i F = 6 Amps, T C = 25 C i F = 6 Amps, T C = 125 C Maximum Instantaneous Reverse Current (Note 2.) (Rated dc Voltage, T C = 25 C) (Rated dc Voltage, T C = 125 C) 1. Rating applies when surface mounted on the minimum pad size recommended. 2. Pulse Test: Pulse Width = 300 µs, Duty Cycle 2.0%. V F i R Volts ma 2
3 MBRD620CT, MBRD630CT, MBRD640CT, MBRD650CT, MBRD660CT TYPICAL CHARACTERISTICS *The curves shown are typical for the highest voltage device in the voltage grouping. Typical reverse current for lower voltage selections can be estimated from these curves if V R is sufficient below rated V R. Figure 2. Typical Reverse Current,* Per Leg Figure 1. Typical Forward Voltage, Per Leg Figure 3. Average Power Dissipation, Per Leg 3
4 Figure 4. Current Derating, Case, Per Leg Figure 5. Current Derating, Ambient, Per Leg Figure 6. Typical Capacitance, Per Leg 4
5 PACKAGE DIMENSIONS DPAK PLASTIC CASE 369A 13 ISSUE AA V S F B R G L A K D 2 PL J H C T E U Z 5
6 Notes 6
7 Notes 7
8 SWITCHMODE is a trademark of Semiconductor Components Industries, LLC. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. PUBLICATION ORDERING INFORMATION NORTH AMERICA Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado USA Phone: or Toll Free USA/Canada Fax: or Toll Free USA/Canada ONlit@hibbertco.com Fax Response Line: or Toll Free USA/Canada N. American Technical Support: Toll Free USA/Canada EUROPE: LDC for ON Semiconductor European Support German Phone: (+1) (Mon Fri 2:30pm to 7:00pm CET) ONlit german@hibbertco.com French Phone: (+1) (Mon Fri 2:00pm to 7:00pm CET) ONlit french@hibbertco.com English Phone: (+1) (Mon Fri 12:00pm to 5:00pm GMT) ONlit@hibbertco.com EUROPEAN TOLL FREE ACCESS*: *Available from Germany, France, Italy, UK, Ireland CENTRAL/SOUTH AMERICA: Spanish Phone: (Mon Fri 8:00am to 5:00pm MST) ONlit spanish@hibbertco.com Toll Free from Mexico: Dial for Access then Dial ASIA/PACIFIC: LDC for ON Semiconductor Asia Support Phone: (Tue Fri 9:00am to 1:00pm, Hong Kong Time) Toll Free from Hong Kong & Singapore: ONlit asia@hibbertco.com JAPAN: ON Semiconductor, Japan Customer Focus Center Nishi Gotanda, Shinagawa ku, Tokyo, Japan Phone: r14525@onsemi.com ON Semiconductor Website: For additional information, please contact your local Sales Representative. 8 MBRD620CT/D
ULTRAFAST RECTIFIERS 8.0 AMPERES VOLTS
Preferred Devices... designed for use in switching power supplies, inverters and as free wheeling diodes, these state of the art devices have the following features: Ultrafast 25, 50 and 75 Nanosecond
MBRB20200CT. Dual Schottky Rectifier SCHOTTKY BARRIER RECTIFIER 20 AMPERES 200 VOLTS
Preferred Device Dual Schottky Rectifier... using Schottky Barrier technology with a platinum barrier metal. This state of the art device is designed for use in high frequency switching power supplies
50 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS VOLTS 300 WATTS MAXIMUM RATINGS (1) THERMAL CHARACTERISTICS (1) Figure 1.
... designed for use in high power amplifier and switching circuit applications. High Current Capability I C Continuous = 50 Amperes. DC Current Gain h FE = 15 60 @ I C = 25 Adc Low Collector Emitter Saturation
DARLINGTON 10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS VOLTS 70 WATTS MAXIMUM RATINGS THERMAL CHARACTERISTICS. Collector Emitter Voltage
...designed for general purpose and low speed switching applications. High DC Current Gain h FE = 2500 (typ.) at I C = 4.0 Collector Emitter Sustaining Voltage at 100 madc V CEO(sus) = 80 Vdc (min.) BDX33B,
2N3771, 2N and 30 AMPERE POWER TRANSISTORS NPN SILICON 40 and 60 VOLTS 150 WATTS *MAXIMUM RATINGS THERMAL CHARACTERISTICS
... designed for linear amplifiers, series pass regulators, and inductive switching applications. Forward Biased Second Breakdown Current Capability I S/b = 3.75 Adc @ V CE = 40 2N3771 = 2.5 Adc @ V CE
TIP120, TIP121, TIP122,
... designed for general purpose amplifier and low speed switching applications. High DC Current Gain h FE = 2500 (Typ) @ I C = 4.0 Adc Collector Emitter Sustaining Voltage @ 100 madc V CEO(sus) = 60 Vdc
2N3055A MJ AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60, 120 VOLTS 115, 180 WATTS *MAXIMUM RATINGS THERMAL CHARACTERISTICS
... PowerBase complementary transistors designed for high power audio, stepping motor and other linear applications. These devices can also be used in power switching circuits such as relay or solenoid
25 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS VOLTS 200 WATTS MAXIMUM RATINGS (1) THERMAL CHARACTERISTICS
... designed for general purpose power amplifier and switching applications. Low Collector Emitter Saturation Voltage V CE(sat) = 1.0 Vdc, (max) at I C = 15 Adc Low Leakage Current I CEX = 1.0 madc (max)
30 AMPERE POWER TRANSISTOR NPN SILICON 100 VOLTS 200 WATTS MAXIMUM RATINGS THERMAL CHARACTERISTICS. Figure 1. Power Temperature Derating Curve
... for use as an output device in complementary audio amplifiers to 100 Watts music power per channel. High DC Current Gain h FE = 25 100 @ I C = 7.5 A Excellent Safe Operating Area Complement to the
P D P D mw mw/ C Watts mw/ C T J, T stg 55 to +150 C (1) 200 C/W. Characteristic Symbol Min Typ Max Unit.
NPN Silicon ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V CEO 45 Vdc Collector Base Voltage V CBO 45 Vdc Emitter Base Voltage V EBO 6.5 Vdc Collector
500 mw SOD 123 Surface Mount
500 mw SOD 123 Surface Mount Three complete series of Zener diodes are offered in the convenient, surface mount plastic SOD 123 package. These devices provide a convenient alternative to the leadless 34
MC33064DM 5 UNDERVOLTAGE SENSING CIRCUIT
The MC34064 is an undervoltage sensing circuit specifically designed for use as a reset controller in microprocessor-based systems. It offers the designer an economical solution for low voltage detection
30 AMPERE POWER TRANSISTOR PNP SILICON 100 VOLTS 200 WATTS MAXIMUM RATINGS MAXIMUM RATINGS. Figure 1. Power Temperature Derating Curve
... for use as an output device in complementary audio amplifiers to 100 Watts music power per channel. High DC Current Gain h FE = 25 100 @ I C = 7.5 A Excellent Safe Operating Area Complement to the
MBRB20200CT. SWITCHMODE Power Rectifier. Dual Schottky Rectifier SCHOTTKY BARRIER RECTIFIER 20 AMPERES, 200 V
MBRBCT SWITCHMODE Power Rectifier Dual Schottky Rectifier This device uses the Schottky Barrier technology with a platinum barrier metal. This state of the art device is designed for use in high frequency
BC546, B BC547, A, B, C BC548, A, B, C
NPN Silicon MAXIMUM RATINGS Rating Symbol BC546 BC547 Unit Collector Emitter oltage CEO 65 45 30 dc Collector Base oltage CBO 80 50 30 dc Emitter Base oltage EBO 6.0 dc Collector Current Continuous I C
MJ10015 MJ AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 400 AND 500 VOLTS 250 WATTS MAXIMUM RATINGS THERMAL CHARACTERISTICS
The MJ10015 and MJ10016 Darlington transistors are designed for high voltage, high speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line operated
MBRD835LT4G. SWITCHMODE Power Rectifier. DPAK Surface Mount Package SCHOTTKY BARRIER RECTIFIER 8.0 AMPERES, 35 VOLTS
MBRD8L Preferred Device SWITCHMODE Power Rectifier Surface Mount Package This SWITCHMODE power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use
N Channel Depletion MAXIMUM RATINGS. ELECTRICAL CHARACTERISTICS (T A = 25 C unless otherwise noted) OFF CHARACTERISTICS ON CHARACTERISTICS
N Channel Depletion MAXIMUM RATINGS Rating Symbol Value Unit Drain Source Voltage V DS 25 Vdc Drain Gate Voltage V DG 25 Vdc Gate Source Voltage V GS 25 Vdc Gate Current I G 10 madc Total Device Dissipation
MBR735, MBR745. SWITCHMODE Power Rectifiers. SCHOTTKY BARRIER RECTIFIERS 7.5 AMPERES 35 and 45 VOLTS
MBR735, MBR75 SWITCHMODE Power Rectifiers Features and Benefits Low Forward Voltage Low Power Loss/High Efficiency High Surge Capacity 75 C Operating Junction Temperature PbFree Packages are Available*
Reverse Blocking Thyristors
Preferred Device Reverse Blocking Thyristors Designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supply crowbar circuits. Glass Passivated Junctions
TMOS E FET. Power Field Effect Transistor MTP8N50E. N Channel Enhancement Mode Silicon Gate
TMOS E FET. Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate MTP8N5E This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage blocking capability without
Ultrafast E Series with High Reverse Energy Capability
Ultrafast E Series with High Reverse Energy Capability... designed for use in switching power supplies, inverters and as free wheeling diodes, these state of the art devices have the following features:
Silicon Bidirectional Thyristors
Preferred Device Silicon Bidirectional Thyristors Designed for high performance full-wave ac control applications where high noise immunity and high commutating di/dt are required. Blocking Voltage to
MBRS320T3, MBRS330T3, MBRS340T3. Surface Mount Schottky Power Rectifier SCHOTTKY BARRIER RECTIFIERS 3.0 AMPERES 20, 30, 40 VOLTS
MBRS320T3, MBRS330T3, MBRS340T3 Preferred Devices Surface Mount Schottky Power Rectifier... employing the Schottky Barrier principle in a large area metal to silicon power diode. State of the art geometry
MBRA320T3G Surface Mount Schottky Power Rectifier
Surface Mount Schottky Power Rectifier Power Surface Mount Package Employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State of the art geometry features epitaxial construction
MARKING DIAGRAMS MAXIMUM RATINGS (Voltages Referenced to V SS ) (Note 1.) ORDERING INFORMATION PDIP 14 P SUFFIX CASE 646
The MC14106B hex Schmitt Trigger is constructed with MOS P channel and N channel enhancement mode devices in a single monolithic structure. These devices find primary use where low power dissipation and/or
MR2520LRL. Overvoltage Transient Suppressor OVERVOLTAGE TRANSIENT SUPPRESSOR VOLTS
Overvoltage Transient Suppressor Designed for applications requiring a low voltage rectifier with reverse avalanche characteristics for use as reverse power transient suppressors. Developed to suppress
MARKING DIAGRAM Mechanical Characteristics. B2E1 Epoxy Meets UL 94 V in
Surface Mount Schottky Power Rectifier Power Surface Mount Package This device employs the Schottky Barrier principle in a metal to silicon power rectifier. Features epitaxial construction with oxide passivation
POWER TRANSISTORS 5 AMPERES 1200 VOLTS 35 and 75 WATTS MAXIMUM RATINGS THERMAL CHARACTERISTICS. Symbol MJE18204 MJF18204 Unit
The MJE/MJF18204 have an application specific state of the art die dedicated to the electronic ballast ( light ballast ) and power supply applications. Improved Global Efficiency Due to Low Base Drive
MBR60H100CTG. SWITCHMODE Power Rectifier 100 V, 60 A SCHOTTKY BARRIER RECTIFIER 60 AMPERES 100 VOLTS
SWITCHMODE Power Rectifier 1 V, 6 A Features and Benefits Low Forward Voltage:.72 V @ 125 C Low Power Loss/High Efficiency High Surge Capacity 175 C Operating Junction Temperature 6 A Total (3 A Per Diode
MBR20200CT. Switch mode Power Rectifier. Dual Schottky Rectifier SCHOTTKY BARRIER RECTIFIER 20 AMPERES, 200 VOLTS
MBRCT Switch mode Power Rectifier Dual Schottky Rectifier Features and Benefits Low Forward Voltage Low Power Loss/High Efficiency High Surge Capacity 75 C Operating Junction Temperature A Total ( A Per
BYV SWITCHMODE Power Rectifier. ULTRAFAST RECTIFIER 16 AMPERES, 200 VOLTS t rr = 35 ns
BYV32-0 SWITCHMODE Power Rectifier Features and Benefits Low Forward Voltage Low Power Loss/High Efficiency High Surge Capacity 175 C Operating Junction Temperature A Total (8 A Per Diode Leg) PbFree Packages
I E I EM 24 P D
NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE13007 is designed for high voltage, high speed power switching inductive circuits where fall time is critical. It is particularly
Reverse Blocking Thyristors
Preferred Device Reverse Blocking Thyristors Glassivated PNPN devices designed for high volume consumer applications such as temperature, light, and speed control; process and remote control, and warning
MBRA320T3G Surface Mount Schottky Power Rectifier
Surface Mount Schottky Power Rectifier Power Surface Mount Package Employing the Schottky Barrier principle in a large area metal to silicon power diode. State of the art geometry features epitaxial construction
MARKING DIAGRAMS PIN CONNECTIONS ORDERING INFORMATION MC3x58P1 AWL YYWW PDIP 8 P1 SUFFIX CASE 626 SO 8 D SUFFIX CASE 751 3x58 ALYW
Utilizing the circuit designs perfected for the quad operational amplifiers, these dual operational amplifiers feature: low power drain, a common mode input voltage range extending to ground/v EE, and
MBRS360T3, MBRS360BT3G. Surface Mount Schottky Power Rectifier SCHOTTKY BARRIER RECTIFIERS 3.0 AMPERES, 60 VOLTS
Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal to silicon power diode. State of the art geometry features epitaxial construction with oxide
Watts T. W/ C Operating and Storage Junction. T J, T stg
The BUS98 and BUS98A transistors are designed for high voltage, high speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line operated SWITCHMODE
Unidirectional*
Unidirectional* Mosorb devices are designed to protect voltage sensitive components from high voltage, high energy transients. They have excellent clamping capability, high surge capability, low zener
1 kv SWITCHMODE Series
1 kv SWITCHMODE Series These transistors are designed for high voltage, high speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line operated SWITCHMODE
PERIPHERAL DRIVER ARRAYS
The seven NPN Darlington connected transistors in these arrays are well suited for driving lamps, relays, or printer hammers in a variety of industrial and consumer applications. Their high breakdown voltage
Bidirectional* PLASTIC SURFACE MOUNT ZENER OVERVOLTAGE TRANSIENT SUPPRESSORS VOLTS 600 WATT PEAK POWER
Bidirectional* The SMB series is designed to protect voltage sensitive components from high voltage, high energy transients. They have excellent clamping capability, high surge capability, low zener impedance
MBR120LSFT3G. Surface Mount Schottky Power Rectifier. Plastic SOD 123 Package SCHOTTKY BARRIER RECTIFIER 1.0 AMPERES 20 VOLTS
MBR12LSFT1 Surface Mount Schottky Power Rectifier Plastic SOD 123 Package This device uses the Schottky Barrier principle with a large area metal to silicon power diode. Ideally suited for low voltage,
MUR405, MUR410, MUR415, MUR420, MUR440, MUR460. SWITCHMODE Power Rectifiers ULTRAFAST RECTIFIERS 4.0 AMPERES, VOLTS
MUR45, MUR4, MUR415, MUR42, MUR44, MUR46 SWITCHMODE Power Rectifiers These state of the art devices are a series designed for use in switching power supplies, inverters and as free wheeling diodes. Features
MBR2045CT, MBRF2045CT. SWITCHMODE Power Rectifier SCHOTTKY BARRIER RECTIFIER 20 AMPERES, 45 VOLTS
SWITCHMODE Power Rectifier Features and Benefits Low Forward Voltage Low Power Loss / High Efficiency High Surge Capacity 175 C Operating Junction Temperature 2 A Total ( A Per Diode Leg) PbFree Package
MBR120VLSFT3G. Surface Mount Schottky Power Rectifier. Plastic SOD 123 Package SCHOTTKY BARRIER RECTIFIER 1.0 AMPERES 20 VOLTS
MBR12VLSFT1 Surface Mount Schottky Power Rectifier Plastic SOD 123 Package This device uses the Schottky Barrier principle with a large area metal to silicon power diode. Ideally suited for low voltage,
MRA4003T3G Series, NRVA4003T3G Series. Surface Mount Standard Recovery Power Rectifier. SMA Power Surface Mount Package
MRA43T3G Series, NRVA43T3G Series Surface Mount Standard Recovery Power Rectifier Power Surface Mount Package Features construction with glass passivation. Ideally suited for surface mounted automotive
ORDERING INFORMATION MAXIMUM RATINGS AXIAL LEAD CASE 41A PLASTIC MPTE 1N 63xx YYWW ICTE YYWW
Unidirectional* Mosorb devices are designed to protect voltage sensitive components from high voltage, high energy transients. They have excellent clamping capability, high surge capability, low zener
MC100EPT22/D. MARKING DIAGRAMS* ORDERING INFORMATION SO 8 D SUFFIX CASE 751 KPT22 ALYW TSSOP 8 DT SUFFIX CASE 948R KA22 ALYW
The MC00EPT22 is a dual LVTTL/LVCMOS to differential LVPECL translator. Because LVPECL (Positive ECL) levels are used only +3.3 V and ground are required. The small outline lead package and the single
MBR130LSFT1G. Surface Mount Schottky Power Rectifier. Plastic SOD 123 Package SCHOTTKY BARRIER RECTIFIER 1.0 AMPERES, 30 VOLTS
MBR3LSFTG Surface Mount Schottky Power Rectifier Plastic SOD 23 Package This device uses the Schottky Barrier principle with a large area metal to silicon power diode. Ideally suited for low voltage, high
MMBFJ309. N Channel MAXIMUM RATINGS THERMAL CHARACTERISTICS DEVICE MARKING. ELECTRICAL CHARACTERISTICS (T A = 25 C unless otherwise noted)
N Channel MAXIMUM RATINGS Rating Symbol Value Unit Drain Source Voltage V DS 25 Vdc Gate Source Voltage V GS 25 Vdc Gate Current I G 10 madc THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total
MUR8100E, MUR880E. SWITCHMODE Power Rectifiers. Ultrafast E Series with High Reverse Energy Capability ULTRAFAST RECTIFIERS 8.
MUR8E, MUR88E MUR8E is a Preferred Device SWITCHMODE Power Rectifiers Ultrafast E Series with High Reverse Energy Capability The MUR8 and MUR88E diodes are designed for use in switching power supplies,
MBRS2040LT3G. Surface Mount Schottky Power Rectifier. SMB Power Surface Mount Package SCHOTTKY BARRIER RECTIFIER 2.
MBRS24LT3 Surface Mount Schottky Power Rectifier Power Surface Mount Package... employing the Schottky Barrier principle in a metal to silicon power rectifier. Features epitaxial construction with oxide
10 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS VOLTS 125 WATTS MAXIMUM RATINGS THERMAL CHARACTERISTICS TIP141 TIP142
... designed for general purpose amplifier and low frequency switching applications. High DC Current Gain Min h FE = 1000 @ I C = 5 A, V CE = 4 V Collector Emitter Sustaining Voltage @ 30 ma V CEO(sus)
MC14521B. MARKING DIAGRAMS. MAXIMUM RATINGS (Voltages Referenced to V SS ) (Note 2.) ORDERING INFORMATION PDIP 16 P SUFFIX CASE 648
The MC452B consists of a chain of 24 flip flops with an input circuit that allows three modes of operation. The input will function as a crystal oscillator, an RC oscillator, or as an input buffer for
MURA160T3G SURA8160T3G. Surface Mount Ultrafast Power Rectifier ULTRAFAST RECTIFIER 1 AMPERE, 600 VOLTS
MURA6T3G, SURA86T3G Surface Mount Ultrafast Power Rectifier Ideally suited for high voltage, high frequency rectification, or as free wheeling and protection diodes in surface mount applications where
SEMICONDUCTOR TECHNICAL DATA
SEMICONDUCTOR TECHNICAL DATA Order this document by MUR/D... designed for use in switching power supplies, inverters and as free wheeling diodes, these state of the art devices have the following features:
PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network
Preferred Devices PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias
MURA105T3G MURA110T3G SURA8110T3G. Surface Mount Ultrafast Power Rectifiers ULTRAFAST RECTIFIERS 1 AMPERE, VOLTS
MURA5T3G, MURAT3G, SURA8T3G Preferred Devices Surface Mount Ultrafast Power Rectifiers Ideally suited for high voltage, high frequency rectification, or as free wheeling and protection diodes in surface
MURS320T3G, SURS8320T3G, MURS340T3G, SURS8340T3G, MURS360T3G, SURS8360T3G. Surface Mount Ultrafast Power Rectifiers
MURS32T3G, SURS832T3G, MURS34T3G, SURS834T3G, MURS36T3G, Surface Mount Ultrafast Power Rectifiers This series employs the state of the art epitaxial construction with oxide passivation and metal overlay
LOW DROPOUT DUAL VOLTAGE REGULATOR
The LM293 is a dual positive.0 low dropout voltage regulator, designed for standby power systems. The main output is capable of supplying 70 ma for microprocessor power, and can be turned on and off by
LOGIC DIAGRAM AND PINOUT ASSIGNMENT V CC TTL PECL 3. MARKING DIAGRAMS* ORDERING INFORMATION PIN DESCRIPTION HLT20 ALYW KLT20 ALYW
The MC0ELT/00ELT20 is a TTL to differential PECL translator. Because PECL (Positive ECL) levels are used, only +5 V and ground are required. The small outline -lead package and the single gate of the ELT20
GENERAL PURPOSE TRANSISTOR ARRAY
The MC3346 is designed for general purpose, low power applications for consumer and industrial designs. Guaranteed BaseEmitter Voltage Matching Operating Current Range Specified: 10 µa to 10 ma Five General
MBRM110LT3G NRVBM110LT1G NRVBM110LT3G. Surface Mount Schottky Power Rectifier. POWERMITE Power Surface Mount Package
MBRM11LT1G, NRVBM11LT1G, NRVBM11LT3G Surface Mount Schottky Power Rectifier Power Surface Mount Package The Schottky employs the Schottky Barrier principle with a barrier metal and epitaxial construction
MBRM120E. Surface Mount Schottky Power Rectifier. POWERMITE Power Surface Mount Package SCHOTTKY BARRIER RECTIFIER 1.0 AMPERES, 20 VOLTS
Surface Mount Schottky Power Rectifier Power Surface Mount Package The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward
MUR805G, MUR810G, MUR815G, MUR820G, MUR840G, MUR860G, MURF860G, SUR8820G, SUR8840G. Switch-mode Power Rectifiers
MUR85G, MUR8G, MUR815G, MUR82G, MUR84G, MUR86G, MURF86G, SUR882G, SUR884G Switch-mode Power Rectifiers This series is designed for use in switching power supplies, inverters and as free wheeling diodes.
MURS120T3G Series, SURS8120T3G Series. Surface Mount Ultrafast Power Rectifiers
MURS12T3G Series, SURS812T3G Series Surface Mount Ultrafast Power Rectifiers MURS5T3G, MURS1T3G, MURS115T3G, MURS12T3G, MURS14T3G, MURS16T3G, SURS85T3G, SURS81T3G, SURS8115T3G, SURS812T3G, SURS814T3G,
MJ16110 MJW SWITCHMODE Bridge Series
SWITCHMODE Bridge Series... specifically designed for use in half bridge and full bridge off line converters. Excellent Dynamic Saturation Characteristics Rugged RBSOA Capability Collector Emitter Sustaining
PIN CONNECTIONS Representative Schematic Diagram
The MC34063A Series is a monolithic control circuit containing the primary functions required for DC to DC converters. These devices consist of an internal temperature compensated reference, comparator,
APPLICATION NOTE. where Vundershoot = (Vref lower) Gnd. Hence the retrigger time is given by:
Prepared by: Douglas M. Buzard, Rodolfo E. Soto Introduction The MC74HC4538A is a monostable multivibrator commonly used as a one shot, or in applications that require a pulse width of reliable dimensions.
MBRM120ET1G NRVBM120ET1G MBRM120ET3G NRVBM120ET3G. Surface Mount Schottky Power Rectifier. POWERMITE Power Surface Mount Package
MBRM12ET1G, NRVBM12ET1G, MBRM12ET3G, NRVBM12ET3G Surface Mount Schottky Power Rectifier Power Surface Mount Package The Schottky employs the Schottky Barrier principle with a barrier metal and epitaxial
1 AMPERE GENERAL PURPOSE POWER TRANSISTORS VOLTS 30 WATTS *MAXIMUM RATINGS THERMAL CHARACTERISTICS (2)
...designed for driver circuits, switching, and amplifier applications. These high performance plastic devices feature: Low Saturation Voltage VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 Amp Excellent Power Dissipation
LOW POWER SCHOTTKY. GUARANTEED OPERATING RANGES ORDERING INFORMATION
The SN74LS64 is a high speed 8-Bit Serial-In Parallel-Out Shift Register. Serial data is entered through a 2-Input AN gate synchronous with the LOW to HIGH transition of the clock. The device features
MBRD620CTG Series, NRVBD640CTG Series. Switch Mode Power Rectifiers. DPAK 3 Surface Mount Package SCHOTTKY BARRIER RECTIFIERS 6.0 AMPERES, VOLTS
MBRD62CTG Series, NRVBD64CTG Series Switch Mode Power Rectifiers DPK 3 Surface Mount Package These state of the art devices are designed for use in switching power supplies, inverters and as free wheeling
MC14066BF. MARKING DIAGRAMS. MAXIMUM RATINGS (Voltages Referenced to V SS ) (Note 2.) ORDERING INFORMATION PDIP 14 P SUFFIX CASE 646
The MC14066B consists of four independent switches capable of controlling either digital or analog signals. This quad bilateral switch is useful in signal gating, chopper, modulator, demodulator and CMOS
TRA Volts, 32 Amperes
25 Volts, 32 Amperes Compact, highly efficient silicon rectifiers for medium current applications requiring: High Current Surge 5 Amperes @ T J = 75 C Peak Performance @ Elevated Temperature 32 Amperes
2N5194 2N for use in power amplifier and switching circuits, excellent safe area limits. Complement to NPN 2N5191, 2N5192
... for use in power amplifier and switching circuits, excellent safe area limits. Complement to NPN 2N5191, 2N5192 ÎÎ *MAXIMUM RATINGS ÎÎ Rating ÎÎ Symbol Î 2N5194 Î Unit ÎÎ Collector Emitter Voltage
LOW POWER SCHOTTKY. GUARANTEED OPERATING RANGES ORDERING INFORMATION
The SN74LS298 is a Quad 2-Port Register. It is the logical equivalent of a quad 2-input multiplexer followed by a quad 4-bit edge-triggered register. A Common Select input selects between two 4-bit input
Distributed by: www.jameco.com -8-83-4242 The content and copyrights of the attached material are the property of its owner. MUR5, MUR55, MUR5, MUR54, MUR56 Preferred Devices SWTCHMODE Power Rectifiers
100 Vdc Collector Base Voltage Emitter Base Voltage Collector Current Continuous. Adc Peak. Watts Derate above 25 C. Watts 25 C
... designed for low power audio amplifier and low current, high speed switching applications. High Collector Emitter Sustaining Voltage VCEO(sus) = 100 (Min) MJE243, MJE253 High DC Current Gain @ IC =
4 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60 VOLTS 15 WATTS MAXIMUM RATINGS THERMAL CHARACTERISTICS. Figure 1. Power Derating BD787
... designed for lower power audio amplifier and low current, high speed switching applications. Low Collector Emitter Sustaining Voltage VCEO(sus) 60 Vdc (Min) BD787, BD788 High Current Gain Bandwidth
NPN MPS650 PNP MPS750 MAXIMUM RATINGS THERMAL CHARACTERISTICS. ELECTRICAL CHARACTERISTICS (TC = 25 C unless otherwise noted) OFF CHARACTERISTICS
MAXIMUM RATINGS Rating Symbol MPS650 MPS750 MPS651 MPS751 Collector Emitter Voltage VCE 40 60 Vdc Collector Base Voltage VCB 60 80 Vdc Emitter Base Voltage VEB 5.0 Vdc Collector Current Continuous IC 2.0
MAC223A6, MAC223A8, MAC223A10. Triacs. Silicon Bidirectional Thyristors. TRIACS 25 AMPERES RMS 400 thru 800 VOLTS
MAC3A6, MAC3A8, MAC3A Triacs Preferred Device Silicon Bidirectional Thyristors Designed primarily for full-wave ac control applications such as lighting systems, heater controls, motor controls and power
N Channel SOT mamps 50 VOLTS RDS(on) = 3.5
Preferred Device NChannel SOT23 Typical applications are dcdc converters, power management in portable and batterypowered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.
P10V45SP. PFC Device Corporation. 10A 45V MOS Schottky Rectifier TO-277 P10V45SP. Major ratings and characteristics. Features. Typical Applications
PFC Device Corporation 0A 45V MOS Schottky Rectifier Major ratings and characteristics Characteristics Values Units TO-77 I F(AV) Rectangular Waveform 0 A V RRM 45 V V F @ 0A, Tj=5 o C 0.39 V, typ. T J
AN1404/D. ECLinPS Circuit Performance at Non-Standard V IH Levels APPLICATION NOTE
ECLinPS Circuit Performance at Non-Standard V IH Levels Prepared by Todd Pearson ECL Applications Engineering APPLICATION NOTE This application note explains the consequences of driving an ECLinPS device
MARKING DIAGRAMS 16 MAXIMUM RATINGS (Voltages Referenced to V SS ) (Note 1.) ORDERING INFORMATION PDIP 16 P SUFFIX CASE 648
查询 CD4553 供应商 The MC14553B 3 digit BCD counter coists of 3 negative edge triggered BCD counters that are cascaded synchronously. A quad latch at the output of each counter permits storage of any given
MBR7030WTG. Switch Mode Power Rectifier SCHOTTKY BARRIER RECTIFIER 70 AMPERES, 30 VOLTS
Switch Mode Power Rectifier The Switch Mode power rectifier, a state of the art device, employs the use of the Schottky Barrier principle with a Platinum barrier metal. Features Dual Diode Construction;
PFC Device Corporation
PFC Device Corporation CT CTF CTI CTB 20A 45V MOS Schottky Rectifier Major ratings and characteristics Characteristics Values Units I F(AV) Rectangular Waveform 2 A V RRM 45 V V F @ A, Tj=125 o C 0.46
PFC Device Corporation
PFC Device Corporation CT CTF CTI CTB 40A 60V MOS Schottky Rectifier Major ratings and characteristics Values Units I F(AV) Rectangular Waveform 20 2 A V RRM 60 V V F @ 20A, Tj=125 o C 0.56 V, typ. T J
MJE15028 MJE AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON VOLTS 50 WATTS MAXIMUM RATINGS THERMAL CHARACTERISTICS
... designed for use as high frequency drivers in audio amplifiers. DC Current Gain Specified to 4.0 Amperes hfe = 40 (Min) @ IC = 3.0 Adc = 20 (Min) @ IC = 4.0 Adc Collector Emitter Sustaining Voltage
N Channel Depletion MAXIMUM RATINGS. ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted) OFF CHARACTERISTICS ON CHARACTERISTICS
N Channel Depletion MAXIMUM RATINGS Rating Symbol Value Unit Drain Source Voltage VDS 25 Vdc Drain Gate Voltage VDG 25 Vdc Gate Source Voltage VGS 25 Vdc Gate Current IG 10 madc Total Device Dissipation
PFC Device Corporation
PFC Device Corporation F I B 20A 120V HPTR Single Schottky Rectifier Major ratings and characteristics Values Units I F(AV) Rectangular Waveform 20 A V RRM 120 V V F @ 20A, Tj=125 o C 0.73 V, typ. T J
Unidirectional* PLASTIC SURFACE MOUNT ZENER OVERVOLTAGE TRANSIENT SUPPRESSORS VOLTS 400 WATTS PEAK POWER
Unidirectional* The SMA series is designed to protect voltage sensitive components from high voltage, high energy transients. They have excellent clamping capability, high surge capability, low zener impedance
MMSZ5221BT1 Series. Zener Voltage Regulators. 500 mw SOD 123 Surface Mount
MMSZ5BT Series Preferred Device Zener Voltage Regulators 5 mw SOD 3 Surface Mount Three complete series of Zener diodes are offered in the convenient, surface mount plastic SOD 3 package. These devices
RURG8060-F085 80A, 600V Ultrafast Rectifier
RURG86F85 8A, 6V Ultrafast Rectifier Features High Speed Switching ( t rr =74ns(Typ.) @ I F =8A ) Low Forward Voltage( V F =.34V(Typ.) @ I F =8A ) Avalanche Energy Rated AECQ Qaulified Applications Automotive
1 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 40, 60, VOLTS 30 WATTS
... designed for use in general purpose amplifier and switching applications. Compact TO220 AB package. ÎÎ MAXIMUM RATINGS TIP29 TIP29A TIP29B TIP29C Rating Symbol 9 Î TIP30 TIP30A TIP30B TIP30C Unit CollectorEmitter
RHRP A, 1200 V, Hyperfast Diode. Features. Applications. Ordering Information. Packaging. Symbol. Data Sheet November 2013
RHRP2 Data Sheet November 23 A, 2 V, Hyperfast Diode Features Hyperfast Recovery = 7 ns (@ I F = A) The RHRP2 is a hyperfast diode with soft recovery characteristics. It has the half recovery time of ultrafast
PFC Device Corporation
PFC Device Corporation CT CTF CTI CTB 20A 80V HPTR Schottky Rectifier Major ratings and characteristics Characteristics Values Units I F(AV) Rectangular Waveform 10 2 A V RRM 80 V V F @ 10A, Tj=125 o C
TIP120, TIP121, TIP122,
... designed for general purpose amplifier and low speed switching applications. High DC Current Gain hfe = 2500 (Typ) @ IC = 4.0 Adc Collector Emitter Sustaining Voltage @ 100 madc VCEO(sus) = 60 Vdc