Reverse Blocking Thyristors
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- Horace Pierce
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1 Preferred Device Reverse Blocking Thyristors Glassivated PNPN devices designed for high volume consumer applications such as temperature, light, and speed control; process and remote control, and warning systems where reliability of operation is important. Glassivated Surface for Reliability and Uniformity Power Rated at Economical Prices Practical Level Triggering and Holding Characteristics Flat, Rugged, Thermopad Construction for Low Thermal Resistance, High Heat Dissipation and Durability Sensitive Gate Triggering Device Marking: Device Type, e.g., C6B, Date Code MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) Rating Symbol Value Unit Peak Repetitive Off State Voltage(1) (Sine Wave, Hz, RGK = 1 kω, TC = 40 to 1 C) C6B C6D, C6D1 C6M, C6M1 On-State RMS Current (180 Conduction Angles, TC = 80 C) Average On State Current (180 Conduction Angles, TC = 80 C) Peak Non-Repetitive Surge Current (1/2 Cycle, Sine Wave, 60 Hz, TJ = +1 C) VDRM, VRRM Volts IT(RMS) 4.0 Amps IT(AV) 2.55 Amps ITSM 20 Amps Circuit Fusing Considerations (t = 8.3 ms) I2t 1.65 A2s Forward Peak Gate Power (Pulse Width 1.0 µsec, TC = 80 C) Forward Average Gate Power (Pulse Width 1.0 µsec, TC = 80 C) Forward Peak Gate Current (Pulse Width 1.0 µsec, TC = 80 C) PGM 0.5 Watt PG(AV) 0.1 Watt IGM 0.2 Amp Operating Junction Temperature Range TJ 40 to +1 Storage Temperature Range Tstg 40 to +150 Mounting Torque(2) 6.0 in. lb. (1) VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. (2) Torque rating applies with use of compression washer (B52200F006). Mounting torque in excess of 6 in. lb. does not appreciably lower case-to-sink thermal resistance. Anode lead and heatsink contact pad are common. C C SCRs 4 AMPERES RMS 200 thru 600 VOLTS ORDERING INFORMATION Device Package Shipping C6B TO225AA 500/Box C6D A TO225AA G TO 225AA (formerly TO 126) CASE 077 STYLE 2 PIN ASSIGNMENT Cathode Anode Gate K 500/Box C6D1 TO225AA 500/Box C6M TO225AA 500/Box C6M1 TO225AA 500/Box Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2000 May, 2000 Rev. 3 1 Publication Order Number: C6/D
2 THERMAL CHARACTERISTICS (TC = 25 C unless otherwise noted.) Characteristic Symbol Max Unit Thermal Resistance, Junction to Case RθJC 3.0 C/W Thermal Resistance, Junction to Ambient RθJA 75 C/W Maximum Lead Temperature for Soldering Purposes 1/8 from Case for Seconds TL 260 C ELECTRICAL CHARACTERISTICS (TC = 25 C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Peak Repetitive Forward or Reverse Blocking Current (VAK = Rated VDRM or VRRM, RGK = 00 Ohms) TJ = 25 C TJ = 1 C ON CHARACTERISTICS Peak Forward On State Voltage(1) (IFM = 1 A Peak for C6B, D, & M) (IFM = 4 A Peak for C6D1, & M1) Gate Trigger Current (Continuous dc)(2) (VAK = 6 Vdc, RL = 0 Ohms) TJ = 25 C TJ = 40 C IDRM, IRRM 0 µa µa VTM 2.2 Volts Peak Reverse Gate Voltage (IGR = µa) VGRM 6.0 Volts Gate Trigger Voltage (Continuous dc)(2) (VAK = 6 Vdc, RL = 0 Ohms) TJ = 25 C TJ = 40 C Gate Non Trigger Voltage (Continuous dc)(2) (VAK = 12 V, RL = 0 Ohms, TJ = 1 C) Latching Current (VAK = 12 V, IG = 20 ma) TJ = 25 C TJ = 40 C Holding Current (VD = 12 Vdc) (Initiating Current = 20 ma, Gate Open) TJ = 25 C TJ = 40 C TJ = +1 C DYNAMIC CHARACTERISTICS Critical Rate of Rise of Off State Voltage (VAK = Rated VDRM, Exponential Waveform, RGK = 00 Ohms, TJ = 1 C) (1) Pulse Test: Pulse Width 2.0 ms, Duty Cycle 2%. (2) RGK is not included in measurement. IGT VGT µa Volts VGD 0.2 Volts IL IH ma ma dv/dt 8.0 V/µs 2
3 Voltage Current Characteristic of SCR + Current Anode + Symbol VDRM IDRM VRRM IRRM VTM IH Parameter Peak Repetitive Off State Forward Voltage Peak Forward Blocking Current Peak Repetitive Off State Reverse Voltage Peak Reverse Blocking Current Peak On State Voltage Holding Current IRRM at VRRM on state Reverse Blocking Region (off state) Reverse Avalanche Region VTM IH + Voltage IDRM at VDRM Forward Blocking Region (off state) Anode T C, CASE TEMPERATURE ( C) HALF SINE WAVE RESISTIVE OR INDUCTIVE LOAD. 50 to 400 Hz IT(AV) AVERAGE ON-STATE CURRENT (AMPERES) DC Figure 1. Average Current Derating P (AV), AVERAGE ON-STATE POWER DISSIPATION (WATTS) HALF SINE WAVE RESISTIVE OR INDUCTIVE LOAD 50 TO 400Hz. JUNCTION TEMPERATURE 1 C IT(AV) AVERAGE ON-STATE CURRENT (AMPERES) Figure 2. Maximum On State Power Dissipation DC 3
4 0 00 I GT, GATE TRIGGER CURRENT ( A) I H, HOLDING CURRENT ( A) TJ, JUNCTION TEMPERATURE ( C) TJ, JUNCTION TEMPERATURE ( C) Figure 3. Typical Gate Trigger Current versus Junction Temperature Figure 4. Typical Holding Current versus Junction Temperature , GATE TRIGGER VOLTAGE (V) I L, LATCHING CURRENT ( A) 0 VGT TJ, JUNCTION TEMPERATURE ( C) TJ, JUNCTION TEMPERATURE ( C) 95 1 Figure 5. Typical Gate Trigger Voltage versus Junction Temperature Figure 6. Typical Latching Current versus Junction Temperature 4
5 Package Interchangeability The dimensional diagrams below compare the critical dimensions of the ON Semiconductor C-6 package with competitive devices. It has been demonstrated that the smaller dimensions of the ON Semiconductor package make it compatible in most lead-mount and chassis-mount applications. The user is advised to compare all critical dimensions for mounting compatibility DIA TYP BSC ON Semiconductor C-6 Package Competitive C-6 Package 5
6 PACKAGE DIMENSIONS TO 225AA (formerly TO 126) CASE ISSUE W H Q B U F A K V G S D 2 PL M C J R 0.25 (0.0) M A M B M 0.25 (0.0) M A M B M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, CONTROLLING DIMENSION: INCH. INCHES MILLIMETERS DIM MIN MAX MIN MAX A B C D F G BSC 2.39 BSC H J K M 5 TYP 5 TYP Q R S U V STYLE 2: PIN 1. CATHODE 2. ANODE 3. GATE 6
7 Notes 7
8 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. PUBLICATION ORDERING INFORMATION NORTH AMERICA Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado USA Phone: or Toll Free USA/Canada Fax: or Toll Free USA/Canada ONlit@hibbertco.com Fax Response Line: or Toll Free USA/Canada N. American Technical Support: Toll Free USA/Canada EUROPE: LDC for ON Semiconductor European Support German Phone: (+1) (M F 1:00pm to 5:00pm Munich Time) ONlit german@hibbertco.com French Phone: (+1) (M F 1:00pm to 5:00pm Toulouse Time) ONlit french@hibbertco.com English Phone: (+1) (M F 12:00pm to 5:00pm UK Time) ONlit@hibbertco.com EUROPEAN TOLL FREE ACCESS*: *Available from Germany, France, Italy, England, Ireland CENTRAL/SOUTH AMERICA: Spanish Phone: (Mon Fri 8:00am to 5:00pm MST) ONlit spanish@hibbertco.com ASIA/PACIFIC: LDC for ON Semiconductor Asia Support Phone: (Tue Fri 9:00am to 1:00pm, Hong Kong Time) Toll Free from Hong Kong & Singapore: ONlit asia@hibbertco.com JAPAN: ON Semiconductor, Japan Customer Focus Center Nishi Gotanda, Shinagawa ku, Tokyo, Japan Phone: r14525@onsemi.com ON Semiconductor Website: For additional information, please contact your local Sales Representative. 8 C6/D
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N Channel Depletion MAXIMUM RATINGS. ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted) OFF CHARACTERISTICS ON CHARACTERISTICS
N Channel Depletion MAXIMUM RATINGS Rating Symbol Value Unit Drain Source Voltage VDS 25 Vdc Drain Gate Voltage VDG 25 Vdc Gate Source Voltage VGS 25 Vdc Gate Current IG 10 madc Total Device Dissipation
T12M50T600B TRIACS 12 AMPERES RMS 600 VOLTS. Triacs Sillicon Bidirectional Thyristors TO-220AB FEATURES MECHANICAL DATA
LITE-ON SEMICONDUCTOR Triacs Sillicon Bidirectional Thyristors TRIACS 12 AMPERES RMS VOLTS FEATURES Blocking Voltage to Volts On-state Current Rating of 12 Amperes RMS at 9 Uniform Gate Trigger Currents
MBRS2040LT3G. Surface Mount Schottky Power Rectifier. SMB Power Surface Mount Package SCHOTTKY BARRIER RECTIFIER 2.
MBRS24LT3 Surface Mount Schottky Power Rectifier Power Surface Mount Package... employing the Schottky Barrier principle in a metal to silicon power rectifier. Features epitaxial construction with oxide
BYV SWITCHMODE Power Rectifier. ULTRAFAST RECTIFIER 16 AMPERES, 200 VOLTS t rr = 35 ns
BYV32-0 SWITCHMODE Power Rectifier Features and Benefits Low Forward Voltage Low Power Loss/High Efficiency High Surge Capacity 175 C Operating Junction Temperature A Total (8 A Per Diode Leg) PbFree Packages
MMBFJ309. N Channel MAXIMUM RATINGS THERMAL CHARACTERISTICS DEVICE MARKING. ELECTRICAL CHARACTERISTICS (T A = 25 C unless otherwise noted)
N Channel MAXIMUM RATINGS Rating Symbol Value Unit Drain Source Voltage V DS 25 Vdc Gate Source Voltage V GS 25 Vdc Gate Current I G 10 madc THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total
MBRM110LT3G NRVBM110LT1G NRVBM110LT3G. Surface Mount Schottky Power Rectifier. POWERMITE Power Surface Mount Package
MBRM11LT1G, NRVBM11LT1G, NRVBM11LT3G Surface Mount Schottky Power Rectifier Power Surface Mount Package The Schottky employs the Schottky Barrier principle with a barrier metal and epitaxial construction
1 kv SWITCHMODE Series
1 kv SWITCHMODE Series These transistors are designed for high voltage, high speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line operated SWITCHMODE
BAV70DXV6T1, BAV70DXV6T5 Preferred Device. Monolithic Dual Switching Diode Common Cathode. Lead-Free Solder Plating.
BAV70DXV6T1, BAV70DXV6T5 Preferred Device Monolithic Dual Switching Diode Common Cathode LeadFree Solder Plating MAXIMUM RATINGS (EACH DIODE) Rating Symbol Value Unit Reverse Voltage V R 70 Vdc Forward
MBRA320T3G Surface Mount Schottky Power Rectifier
Surface Mount Schottky Power Rectifier Power Surface Mount Package Employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State of the art geometry features epitaxial construction
MAC16D, MAC16M, MAC16N. Triacs. Silicon Bidirectional Thyristors. TRIACS 16 AMPERES RMS 400 thru 800 VOLTS
MAC6D, MAC6M, MAC6N Triacs Preferred Device Silicon Bidirectional Thyristors Designed for high performance full-wave ac control applications where high noise immunity and high commutating di/dt are required.
GENERAL PURPOSE TRANSISTOR ARRAY
The MC3346 is designed for general purpose, low power applications for consumer and industrial designs. Guaranteed BaseEmitter Voltage Matching Operating Current Range Specified: 10 µa to 10 ma Five General
MBR20200CT. Switch mode Power Rectifier. Dual Schottky Rectifier SCHOTTKY BARRIER RECTIFIER 20 AMPERES, 200 VOLTS
MBRCT Switch mode Power Rectifier Dual Schottky Rectifier Features and Benefits Low Forward Voltage Low Power Loss/High Efficiency High Surge Capacity 75 C Operating Junction Temperature A Total ( A Per
Unidirectional*
Unidirectional* Mosorb devices are designed to protect voltage sensitive components from high voltage, high energy transients. They have excellent clamping capability, high surge capability, low zener
MARKING DIAGRAM Mechanical Characteristics. B2E1 Epoxy Meets UL 94 V in
Surface Mount Schottky Power Rectifier Power Surface Mount Package This device employs the Schottky Barrier principle in a metal to silicon power rectifier. Features epitaxial construction with oxide passivation
LOGIC DIAGRAM AND PINOUT ASSIGNMENT V CC TTL PECL 3. MARKING DIAGRAMS* ORDERING INFORMATION PIN DESCRIPTION HLT20 ALYW KLT20 ALYW
The MC0ELT/00ELT20 is a TTL to differential PECL translator. Because PECL (Positive ECL) levels are used, only +5 V and ground are required. The small outline -lead package and the single gate of the ELT20
ORDERING INFORMATION MAXIMUM RATINGS AXIAL LEAD CASE 41A PLASTIC MPTE 1N 63xx YYWW ICTE YYWW
Unidirectional* Mosorb devices are designed to protect voltage sensitive components from high voltage, high energy transients. They have excellent clamping capability, high surge capability, low zener
2N5194 2N for use in power amplifier and switching circuits, excellent safe area limits. Complement to NPN 2N5191, 2N5192
... for use in power amplifier and switching circuits, excellent safe area limits. Complement to NPN 2N5191, 2N5192 ÎÎ *MAXIMUM RATINGS ÎÎ Rating ÎÎ Symbol Î 2N5194 Î Unit ÎÎ Collector Emitter Voltage
T12M5T-B SERIES TRIACS 12 AMPERES RMS 600 VOLTS. Sensitive Gate Triacs Sillicon Bidirectional Thyristors FEATURES TO-220AB MECHANICAL DATA
LITE-ON SEMICONDUCTOR Sensitive Gate Triacs Sillicon Bidirectional Thyristors TRIACS 2 AMPERES RMS 600 VOLTS FEATURES Sensitive Gate Allows Triggering by Microcontrollers and other Blocking Voltage to
MAC4DCM, MAC4DCN. Triacs. Silicon Bidirectional Thyristors TRIACS 4.0 AMPERES RMS VOLTS
Preferred Device Triacs Silicon Bidirectional Thyristors Designed for high volume, low cost, industrial and consumer applications such as motor control; process control; temperature, light and speed control.
MC14066BF. MARKING DIAGRAMS. MAXIMUM RATINGS (Voltages Referenced to V SS ) (Note 2.) ORDERING INFORMATION PDIP 14 P SUFFIX CASE 646
The MC14066B consists of four independent switches capable of controlling either digital or analog signals. This quad bilateral switch is useful in signal gating, chopper, modulator, demodulator and CMOS
N Channel Depletion MAXIMUM RATINGS. ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted) OFF CHARACTERISTICS ON CHARACTERISTICS
N Channel Depletion MAXIMUM RATINGS Rating Symbol Value Unit Drain Source Voltage VDS 25 Vdc Drain Gate Voltage VDG 25 Vdc Gate Source Voltage VGS 25 Vdc Forward Gate Current IGF 10 madc Total Device Dissipation
C106 Series. Thyristors. Surface Mount > V > C106 Series TO 225AA CASE 77 STYLE 2. Description
C106 Series Pb Description Glassivated PNPN devices designed for high volume consumer applications such as temperature, light, and speed control; process and remote control, and warning systems where reliability
SEMICONDUCTOR TECHNICAL DATA
SEMICONDUCTOR TECHNICAL DATA Order this document by MJL3281A/D The MJL3281A and MJL132A are PowerBase power transistors for high power audio, disk head positioners and other linear applications. Designed
MAC15 Series. Triacs. Silicon Bidirectional Thyristors. TRIACS 15 AMPERES RMS 400 thru 800 VOLTS
MAC5 Series Triacs Silicon Bidirectional Thyristors Designed primarily for full-wave ac control applications, such as solidstate relays, motor controls, heating controls and power supplies; or wherever
100 Vdc Collector Base Voltage Emitter Base Voltage Collector Current Continuous. Adc Peak. Watts Derate above 25 C. Watts 25 C
... designed for low power audio amplifier and low current, high speed switching applications. High Collector Emitter Sustaining Voltage VCEO(sus) = 100 (Min) MJE243, MJE253 High DC Current Gain @ IC =
Unidirectional* PLASTIC SURFACE MOUNT ZENER OVERVOLTAGE TRANSIENT SUPPRESSORS VOLTS 400 WATTS PEAK POWER
Unidirectional* The SMA series is designed to protect voltage sensitive components from high voltage, high energy transients. They have excellent clamping capability, high surge capability, low zener impedance
MBRS320T3, MBRS330T3, MBRS340T3. Surface Mount Schottky Power Rectifier SCHOTTKY BARRIER RECTIFIERS 3.0 AMPERES 20, 30, 40 VOLTS
MBRS320T3, MBRS330T3, MBRS340T3 Preferred Devices Surface Mount Schottky Power Rectifier... employing the Schottky Barrier principle in a large area metal to silicon power diode. State of the art geometry
MBRA320T3G Surface Mount Schottky Power Rectifier
Surface Mount Schottky Power Rectifier Power Surface Mount Package Employing the Schottky Barrier principle in a large area metal to silicon power diode. State of the art geometry features epitaxial construction
Four Transistors Equal Power Each. Watts mw/ C Watts mw/ C TJ, Tstg 55 to +150 C. Characteristic Symbol Min Max Unit
PNP/NPN Silicon Voltage and current are negative for PNP transistors MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage VCEO 40 Vdc Collector Base Voltage VCB 40 Vdc Emitter Base Voltage
NGD18N40CLBT4G. Ignition IGBT 18 Amps, 400 Volts N Channel DPAK. 18 AMPS 400 VOLTS V CE(on) 2.0 I C = 10 A, V GE 4.5 V
NGD8NCLB Ignition IGBT 8 Amps, Volts N Channel DPAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over Voltage clamped protection for use in
MJW0281A (NPN) MJW0302A (PNP) Complementary NPN PNP Power Bipolar Transistors 15 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 260 VOLTS 150 WATTS
MJW28A (NPN) MJW32A (PNP) Preferred Devices Complementary NPN PNP Power Bipolar Transistors These complementary devices are lower power versions of the popular MJW328A and MJW32A audio output transistors.
MBRM120ET1G NRVBM120ET1G MBRM120ET3G NRVBM120ET3G. Surface Mount Schottky Power Rectifier. POWERMITE Power Surface Mount Package
MBRM12ET1G, NRVBM12ET1G, MBRM12ET3G, NRVBM12ET3G Surface Mount Schottky Power Rectifier Power Surface Mount Package The Schottky employs the Schottky Barrier principle with a barrier metal and epitaxial
MBRM120E. Surface Mount Schottky Power Rectifier. POWERMITE Power Surface Mount Package SCHOTTKY BARRIER RECTIFIER 1.0 AMPERES, 20 VOLTS
Surface Mount Schottky Power Rectifier Power Surface Mount Package The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward