S1VM02600A TO-92 (TO-226AA) SCRs 1.5 AMPERES RMS 600 VOLTS. Sensitive Gate Sillicon Controlled Rectifiers Reverse Blocking Thyristors FEATURES
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1 LITE-ON SEMICONDUCTOR Sensitive Gate Sillicon Controlled Rectifiers Reverse Blocking Thyristors SCRs 1.5 AMPERES RMS 6 VOLTS FEATURES Sensitive Gate Allows Triggering by Microcontrollers and Other Logic Circuits Blocking Voltage to 6 Volts On State Current Rating of 1.5 Amperes RMS at Tc=8 High Surge Current Capability 15 Amperes Glass-Passivated Surface for Reliability and Uniformity TO-92 (TO-226AA) TO-92 DIM. MIN. MAX. A B C D E F G I All Dimensions in millimeter PIN ASSIGNMENT 1 Cathode 2 Gate 3 Anode MAXIMUM RATINGS (Tj= 25 unless otherwise noticed) Rating Symbol Value Unit Peak Repetitive Off State Voltage (TJ= -4 to 11, Sine Wave, 5 to 6 Hz; Gate Open) VDRM, VRRM 6 Volts On-State RMS Current (TC = 8 ) 18 Conduction Angles IT(RMS) 1.5 Amps Peak Non-Repetitive Surge Current TA=25 (1/2 Cycle, Sine Wave, 6 Hz, TJ = 25 ) ITSM 15 Amps Circuit Fusing Consideration (t = 8.3 ms) 2 I t.9 A 2 s Forward Peak Gate Power (TA = 25, Pulse Width 1. us) PGM.5 Watt Forward Average Gate Power (TA = 25, t = 8.3 ms) PG(AV).1 Watt Forward Peak Gate Current (TA = 25, Pulse Width 1. us) IGM Amp Reverse Peak Gate Voltage (TA = 25, Pulse Width 1. ms) VGRM 5. Volts Operating Junction Temperature Rate VRRM and VDRM TJ -4 to +11 Storage Temperature Range Tstg -4 to +15 Notice: (1) VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded Rev. 4, May-216, KTXD16
2 THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Thermal Resistance - Junction to Case - Junction to Ambient RthJC RthJA 5 16 /W Maximum Lead Temperature for Soldering Purposes 1/16" from Case for 1 Seconds TL 26 ELECTRICAL CHARACTERISTICS (unless otherwise noted) Characteristics Symbol Min Typ Max Unit OFF CHARACTERISTICS Peak Reptitive Forward or Reverse Blocking Current (VAK=Rated VDRM and VRRM; RGK =1K Ohms) TJ=11 IDRM IRRM 1 2 ua ON CHARACTERISTICS Peak Forward On-State (ITM=± 3.A Peak, Pulse Width 1. ms, Duty Cycle 1%) VTM Volts Gate Trigger Current (VAK = 6. Vdc; RL = 1 Ohms) IGT TJ= ua Holding Current TJ= 25 (VAK = 12 V, Gate Open, Initiating Current = 2 ma) TJ=-4 IH ma Gate Trigger Voltage (VD = 7 V; RL =1 Ohms) TJ= 25 TJ=-4 VGT Volts Gate Non-Trigger Voltage (Pulse Width = 1.ms, Duty Cycle 1%) VAK = 12 vdc, Gate Open) VGD.1 Volts DYNAMIC CHARACTERISTICS Critical Rate of Rise of Off-State Voltage (VD=Rated VDRM,Exponential Waveform, RGK=1K Ohms, TJ=11 dv/dt 25 V/us (1) RGK Current not included in measurement.
3 IT,INSTANTANEOUS ON-STATE CURRENT (AMP) 1 1 TJ= VT,INSTANTANEOUS ON-STATE VOLTAGE(VOLT) Figure 1.On-State Characteristics
4 .8.8 IH, HOLDING CURRENT IGT, GATE TRIGGER CURRENT Figure 2. Typical IGT versus TJ IL, LATCHING CURRENT VGT, GATE TRIGGER VOLTAGE Figure 3. Typical VGT versus TJ Figure 4. Typical IH versus TJ.1 Figure 5. Typical IL versus TJ IT(RMS),RMS ON-STATE CURRENT (AMP) TC, CASE TEMPERATURE( ) Figure 6. On-State Current Derating Curve P(AV),AVERAGE POWER DISSIPATION (WATTS) IT(AV), AVERAGE ON-STATE CURRENT (AMP) Figure 7. Power Dissipation versus IT
5 Legal Disclaimer Notice Important Notice and Disclaimer LSC reserves the right to make changes to this document and its products and specifications at any time without notice. Customers should obtain and confirm the latest product information and specifications before final design, purchase or use. LSC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does LSC assume any liability for application assistance or customer product design. LSC does not warrant or accept any liability with products which are purchased or used for any unintended or unauthorized application. No license is granted by implication or otherwise under any intellectual property rights of LSC. LSC products are not authorized for use as critical components in life support devices or systems without express written approval of LSC.
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More information2N6344. Silicon Bidirectional Thyristors. TRIACS 8 AMPERES RMS 600 thru 800 VOLTS
Preferred Device Triacs Silicon Bidirectional Thyristors Designed primarily for full-wave ac control applications, such as light dimmers, motor controls, heating controls and power supplies; or wherever
More informationBTB08-600BW3G, BTB08-800BW3G
BTB08-600BW3G, BTB08-800BW3G Pb Description Designed for high performance full-wave ac control applications where high noise immunity and high commutating di/dt are required. Features Blocking oltage to
More informationMAC08BT1, MAC08MT1. Thyristors. Surface Mount 200V - 600V > MAC08BT1, MAC08MT1. Description
MAC08BT1, MAC08 Pb Description Designed for high volume, low cost, industrial and consumer applications such as motor control; process control; temperature, light and speed control. Features Sensitive
More informationMAC12D, MAC12M, MAC12N
MAC12D, MAC12M, MAC12N Pb Description Designed for high performance full wave ac control applications where high noise immunity and commutating di/dt are required. Features Blocking Voltage to 800 Volts
More informationP10V45SP. PFC Device Corporation. 10A 45V MOS Schottky Rectifier TO-277 P10V45SP. Major ratings and characteristics. Features. Typical Applications
PFC Device Corporation 0A 45V MOS Schottky Rectifier Major ratings and characteristics Characteristics Values Units TO-77 I F(AV) Rectangular Waveform 0 A V RRM 45 V V F @ 0A, Tj=5 o C 0.39 V, typ. T J
More information2N6344. Thyristors. Surface Mount V > 2N6344. Description
2N6344 Pb Description Designed primarily for full-wave AC control applications, such as light dimmers, motor controls, heating controls and power supplies; or wherever full-wave silicon gate controlled
More informationSilicon Bidirectional Thyristors
Preferred Device Silicon Bidirectional Thyristors Designed for use in solid state relays, MPU interface, TTL logic and any other light industrial or consumer application. Supplied in an inexpensive TO92
More informationBTB16-600BW3G, BTB16-700BW3G, BTB16-800BW3G. Triacs. Silicon Bidirectional Thyristors. TRIACS 16 AMPERES RMS 600 thru 800 VOLTS
BTB-BW3G, BTB-7BW3G, BTB-8BW3G Triacs Silicon Bidirectional Thyristors Designed for high performance full-wave ac control applications where high noise immunity and high commutating di/dt are required.
More informationMAXIMUM ALLOWABLE RATINGS
PROTON-ELECTROTEX RUSSIA Phase Control Thyristor High power cycling capability Low on-state and switching losses Designed for traction and industrial applications Mean on-state current ITA Repetitive peak
More informationBTA16-600BW3G, BTA16-800BW3G,
BTA6-600BW3G, BTA6-800BW3G, Pb Description Designed for high performance full wave ac control applications where high noise immunity and high commutating di/dt are required. Features Blocking oltage to
More informationPINNING - SOT82 PIN CONFIGURATION SYMBOL
BT series D GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated, sensitive gate SYMBOL PARAMETER MAX. MAX. UNIT triacs in a plastic envelope, intended for use in general purpose BT D 6D bidirectional
More informationMAC16D, MAC16M, MAC16N. Triacs. Silicon Bidirectional Thyristors. TRIACS 16 AMPERES RMS 400 thru 800 VOLTS
MAC6D, MAC6M, MAC6N Triacs Preferred Device Silicon Bidirectional Thyristors Designed for high performance full-wave ac control applications where high noise immunity and high commutating di/dt are required.
More informationBTA16-600CW3G, BTA16-800CW3G. Triacs Silicon Bidirectional Thyristors. TRIACS 16 AMPERES RMS 600 thru 800 VOLTS
BTA6-600CW3G, BTA6-800CW3G Triacs Silicon Bidirectional Thyristors Designed for high performance fullwave ac control applications where high noise immunity and high commutating di/dt are required. Features
More informationBTA12-600C4G, BTA12-800C4G. Triacs Silicon Bidirectional Thyristors. TRIACS 12 AMPERES RMS 600 thru 800 VOLTS
BTA12-6C4G, BTA12-8C4G Triacs Silicon Bidirectional Thyristors Designed for high performance full-wave ac control applications where high noise immunity and high commutating di/dt are required. Features
More information2N6344A, 2N6348A, 2N6349A
2N6344A, 2N6348A, 2N6349A Pb Description Designed primarily for full-wave AC control applications, such as light dimmers, motor controls, heating controls and power supplies; or wherever full-wave silicon
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