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1 SCT616/816 Series 16A SCRs Circuit Diagram TO-B(Non-Ins) Description With high ability to withstand the shock loading of large current, SCT616/816 series of silicon controlled rectifiers provide high dv/dt rate with strong resistance to electromagnetic interference. They are especially recommended for use on solid state relay, motorcycle, power charger, T-tools etc. Maximum Ratings: Characteristics Symbol Condition Max. Units Storage junction temperature range TJ - -4 to +15 C Operating junction temperature range T stg - -4 to +15 C Repetitive peak off-state voltage VDRM - 6/8 V Repetitive peak reverse voltage V RRM - 6/8 V Non repetitive peak off-state voltage VDSM - VDRM +1 V Non repetitive peak reverse voltage V RSM - V RRM +1 V RMS on-state current I (TRMS) TO-B(Non-Ins)(T C=11 ) 16 A Non repetitive surge peak on-state current - I (tp=1ms) TSM 18 A I t value for fusing (tp=1ms) I t - 16 A s Critical rate of rise of on-state current (IG= IGT) di/dt - 5 A/μs Peak gate current IGM - 4 A Average gate power dissipation P G(AV) - 1 W Peak gate power PGM - 5 W
2 Electrical Characteristics(Tj=5 unless otherwise specified) Symbol Test Condition Value MIN. TYP. MAX. Unit IGT V D=1V R L=33Ω ma VGT V V GD VD=VDRM Tj=15 RL=3.3KΩ. - - V I L I G=1.I GT ma I H I T=5mA ma dv/dt VD=/3VDRM Gate Open Tj= V/μs Static Characteristics Symbol Condition Max. Units VTM I T=3A tp=38μs,tj= V I DRM V D=V DRM V R=V RRM, Tj=5 5 μa I RRM VD=VDRM VR=VRRM, Tj=15 ma Thermal Resistances Symbol Condition Value Units Rth(j-c) Junction to case(ac) TO-B(Non-Ins) 1.1 /W Ordering Information SMC Diode Solutions SCRs 6:VDRM/VRRM 6V 8:VDRM/VRRM 8V S CT 6 16 B B:TO-B(Non-Ins) I T(RMS):16A Device Package Shipping SCT616/816 Series TO-B(Non-Ins) 5pcs/ Tube
3 Marking Diagram Where XXXXX is YYWWL SCT616B YY WW L = Part name = Year = Week = Lot Number Mechanical Dimensions TO-B(Non-Ins) SYMBOL Millimeters Inches Min. Typ. Max. Min. Typ. Max. A B C C C D E F G H L L L V Ratings and Characteristics Curves FIG.1 Maximum power dissipation versus RMS on-state current P(w) 15 FIG.: RMS on-state current versus case temperature 4 16 IT(RMS) (A) α=18 TO-B (Non-Ins) IT(RMS) (A) Tc ( )
4 FIG.3: Surge peak on-state current versus number of cycles ITSM (A) tp=1ms One cycle Number of cycles FIG.4: On-state characteristics (maximum values) 1 ITM (A) Tj=5 Tj=15 VTM (V) FIG.5: Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp<1ms, and corresponging value of I t (di/dt<5a/μs) ITSM (A), I t (A s) 1 FIG.6: Relative variations of gate trigger current, holding current and latching current versus junction temperature IGT,IH,IL(Tj)/IGT,IH,IL(Tj=5 ) 3..5 ITSM. IGT 1 di/dt I t IH&IL.5 tp(ms) Tj( )
5 DISCLAIMER: 1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact the SMC Diode Solutions sales department for the latest version of the datasheet(s). - In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment, and safety equipment), safety should be ensured by using semiconductor devices that feature assured safety or by means of users fail-safe precautions or other arrangement. 3- In no event shall SMC Diode Solutions be liable for any damages that may result from an accident or any other cause during operation of the user s units according to the datasheet(s). SMC Diode Solution assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets. 4- In no event shall SMC Diode Solutions be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 5- No license is granted by the datasheet(s) under any patents or other rights of any third party or SMC Diode Solutions. 6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of SMC Diode Solutions. 7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations..
China - Germany - Korea - Singapore - United States - smc-diodes.com
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