BTA16-xxxSW BTB16-xxxSW
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1 BTA16-xxxSW BTB16-xxxSW HIGH PERFORMANCE LOGIC LEVEL TRIACS FEATURES IT(RMS) = 16A LOGIC LEVEL TRIGGERING: IGT ma HIGH SURGE CAPABILITY DESCRIPTION The BTA/BTB16-xxxSW triacs are using a high performance glass passivated technology. These triacs are designed for applications requiring high inrush current performances such as fridge motor control, magnetron supply of microwave ovens, halogen range cookers, etc...). The high gate sensitivity makes them perfectly suited for direct gate triggering by microcontrollers and other logic circuits. TO22AB G A2 A1 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit I T(RMS) RMS on-state current BTA Tc = 8 C 16 A (36 conduction angle) BTB Tc = C I TSM Non repetitive surge peak on-state current tp = 8.3 ms 17 A ( Tj initial = 2 C ) tp = ms 16 I 2 t I 2 t value for fusing tp = ms 128 A 2 s di/dt Critical rate of rise of on-state current Repetitive A/µs Gate supply : I G = 2mA, tr ns F = Hz Tstg Tj Tl Storage and operating junction temperature range - 4 to to + 12 Maximum lead temperature for soldering during s at 4.mm from case C C 26 C Symbol Parameter BTA / BTB16-xxxSW Unit 6 7 V DRM V RRM V DSM Repetitive peak off-state voltage Tj = 12 C Non repetitive surge peak off-state voltage Tj = 12 C Tp µs 6 7 V 7 8 V May Ed: 4C 1/
2 THERMAL RESISTANCES Symbol Parameter Value Unit Rth (j-a) Junction to ambient 6 C/W Rth (j-c) DC Junction to case for DC BTA 2.8 C/W BTB 1.6 Rth (j-c) AC Junction to case for AC 36 conduction angle ( F= Hz) BTA 2.1 C/W BTB 1.2 GATE CHARACTERISTICS (maximum values) P G (AV) = 1W P GM = W (tp = 2 µs) I GM = 4A (tp = 2 µs). ELECTRICAL CHARACTERISTICS Symbol Test Conditions Quadrant BTA/BTB16-xxxSW Unit Value I GT VD=12V (DC) R L=33Ω Tj=2 C I-II-III MAX ma V GT VD =12V (DC) R L =33Ω Tj=2 C I-II-III MAX 1.3 V V GD VD =V DRM R L =3.3kΩ Tj=12 C I-II-III MIN.2 V I L IG =1.2 I GT Tj=2 C I-III MAX 3 ma II MAX 4 I H * I T= ma gate open Tj=2 C MAX ma V TM * I TM= 22.A tp= 38µs Tj=2 C MAX 1. V I DRM I RRM V D = V DRM Tj=2 C MAX µa V R = V RRM Tj=12 C MAX 2 ma dv/dt * V D=67%V DRM Tj=12 C MIN 2 V/µs gate open (di/dt)c * (dv/dt)c =.1V/µs Tj=12 C MIN 3. A/ms Without snubber Tj=12 C MIN 1 * For either polarity of electrode A2 voltage with reference to electrode A1. ORDERING INFORMATION BTB 16-6 S W TRIAC : BTB : UNINSULATED BTA : INSULATED CURRENT VOLTAGE SENSITIVITY 3 QUADRANTS 2/
3 Fig.1 : Maximum power dissipation versus RMS on-state current (resistive load). Fig.2-1 : Correlation between maximum power dissipation and maximum allowable temperatures (T amb and T case ) for different thermal resistances (BTA). 2 P(W) α = 18 P(W) Tcase ( C) 2 Rth=2 C/W Rth=1 C/W Rth= C/W 8 α = 12 Rth=4 C/W 9 α = 9 α = 6 α α = 3 α I T(RMS) (A) α =18 Tamb( C) Fig.2-2 : Correlation between maximum power dissipation and maximum allowable temperatures (T amb and T case ) for different thermal resistances heatsink + contact (BTB). P(W) 2 Rth=4 C/W Rth=2 C/W Rth=1 C/W Rth= C/W Tcase ( C) 1 α =18 Tamb( C) Fig.3 : RMS on-state current versus case temperature. I T(RMS) (A) α =18 BTB BTA Tcase( C) Fig.4 : Relative variation of thermal impedance versus pulse duration. Fig. : Relative variation of gate trigger current and holding current versus junction temperature (typical values). 1. K=[Zth/Rth] 2. I GT,I H [Tj]/I GT,I H [Tj=2 C] Zth(j-c) 2.. Zth(j-a) IH IGT tp(s).1 1E-3 1E-2 1E-1 1E+ 1E+1 1E+2 E+2. Tj( C) /
4 Fig.6 : Non Repetitive surge peak on-state current versus number of cycles. Fig 7 : Non repetitive surge peak on-state current for a sinusoidal pulse with width : tp ms, and corresponding value of I 2 t. I (A) 14 TSM Tj initial=2 C F=Hz 2 I TSM(A),I²t(A²s) ITSM Tj initial=2 C 2 Number of cycles 1 I²t tp(ms) 1 2 Fig.8 : On-state characteristics (maximum values). 2 I TM(A) Tj=Tj max. Tj max.: Vto=.8V Rt=2m Ω Tj=2 C V TM(V) /
5 PACKAGE MECHANICAL DATA TO22AB Plastic DIMENSIONS B b2 C REF. Millimeters Inches Min. Typ. Max. Min. Typ. Max. A I L F a a B A b b l4 C c a1 c2 c e l3 l2 a2 F I I L b1 e M c1 l l M MARKING Type BTA16-6SW BTA16-7SW BTB16-6SW BTB16-7SW Weight : 2.1g Marking BTA16 6SW BTA16 7SW BTB16 6SW BTB16 7SW Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics 1999 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. /
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Distributed by: www.jameco.com 1-800-831-4242 The content and copyrights of the attached material are the property of its owner. BTA16, BTB16 and T16 Series SNUBBERLESS, LOGIC LEVEL & STANDARD 16A TRIACS
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查询 2BL2 供应商 捷多邦, 专业 PCB 打样工厂,24 小时加急出货 STANDARD 0.8A TRIAC Table 1: Main Features Symbol Value Unit I T(RMS) 0.8 A V DRM /V RRM 600 V I GT (Q1 ) 5 ma G A2 A1 DESCRIPTION The is suitable for low power AC
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STTH33CW HIGH FREQUENCY SECONDARY RECTIFIER MAJOR PRODUCT CHARACTERISTICS IF(AV) x 15 A VRRM 3 V Tj (max) 175 C VF (max) 1 V trr (max) ns FEATURES AND BENEFITS COMBINES HIGHEST RECOVERY AND REVERSE VOLTAGE
L4940 series VERY LOW DROP 1.5 A REGULATORS
L4940 series VERY LOW DROP 1.5 A REGULATORS PRECISE 5 V, 8.5 V, 10 V, 12 V OUTPUTS LOW DROPOUT VOLTAGE (500 typ at 1.5A) VERY LOW QUIESCENT CURRENT THERMAL SHUTDOWN SHORT CIRCUIT PROTECTION REVERSE POLARITY
T1610H. 16 A Triac, high temperature and logic level. Applications. Description. Features. Electric heater
T16H 16 A Triac, high temperature and logic level Datasheet production data A Applications Electric heater G A1 A Water heater, room heater Coffee machine Hand dryer Thermostat Features A1 A Junction temperature
DTV32(F)-1200A DTV32(F)-1500A
DTV32(F)-1200A DTV32(F)-1500A (CRT HORIZONTAL DEFLECTION) HIGH VOLTAGE DAMPER DIODE HIGH BREAKDOWN VOLTAGE CAPABILITY. LOW AND MEDIUM FREQUENCY OPERATION SPECIFIED TURN ON SWITCHING CHARAC-. TERISTICS
LCP1511D PROGRAMMABLE TRANSIENT VOLTAGE SUPPRESSOR FOR SLIC PROTECTION. Application Specific Discretes A.S.D. TIP GND GND RING
Application Specific Discretes A.S.D. LCP111D PROGRAMMABLE TRANSIENT VOLTAGE SUPPRESSOR FOR SLIC PROTECTION FEATURES DUAL PROGRAMMABLE TRANSIENT SUP- PRESSOR. WIDE NEGATIVE FI VOLTAGE RANGE : VMGL = -0V
ACST1635-8FP. Overvoltage protected AC switch. Description. Features. Applications
Overvoltage protected AC switch Description Datasheet production data Features OUT COM TO-220FPAB Enables equipment to meet IEC 61000-4-5 surge with overvoltage crowbar technology High noise immunity against
STPR620CT/CF/CFP ULTRA FAST RECOVERY RECTIFIER DIODES MAIN PRODUCT CHARACTERISTICS. 2x3A 200 V. T j(max) 150 C. V F(max ) 0.99 V.
STPR620CT/CF/CFP ULTRA FAST RECOVERY RECTIFIER DIODES MAIN PRODUCT CHARACTERISTICS I F(AV) V RRM 2x3A 200 V FEATURES Suited for SMPS Low losses Low forward and reverse recovery time High surge current
STPR620CT/CF/CFP ULTRA FAST RECOVERY RECTIFIER DIODES MAIN PRODUCT CHARACTERISTICS. 2x3A 200 V. T j(max) 150 C. V F(max ) 0.99 V.
STPR620CT/CF/CFP ULTRA FAST RECOVERY RECTIFIER DIODES MAIN PRODUCT CHARACTERISTICS I F(AV) V RRM 2x3A 200 V T j(max) 150 C V F(max ) t rr(max) 0.99 V 30 ns FEATURES Suited for SMPS Low losses Low forward
STPS0540Z / STPS0560Z
/ SCHOKY RECIFIER MAIN PRODUC CHARACERISICS I F(AV) V RRM 0.5 A 40 / 60V V F (max) 0.40 / 0.50V FEAURES AND BENEFIS Very small conduction losses Negligible switching losses Extremely fast switching DESCRIPION
N - CHANNEL 100V mω - 180A - ISOTOP POWER MOSFET
STE180N10 N - CHANNEL 100V - 5.5 mω - 180A - ISOTOP POWER MOSFET TYPE V DSS R DS(on) I D STE180N10 100 V < 7 mω 180 A TYPICAL RDS(on) = 5.5 mω 100% AVALANCHE TESTED LOW INTRINSIC CAPACITANCE GATE CHARGE
ACST310-8B. Overvoltage protected AC switch. Description. Features. Applications. Benefits
Overvoltage protected AC switch Datasheet production data Features AC switch with self over voltage protection Microcontroller direct driven (low gate current max. 10 ma) Three quadrants (Q1, Q2 and Q3)
IRF830. N - CHANNEL 500V Ω - 4.5A - TO-220 PowerMESH MOSFET
N - CHANNEL 500V - 1.35Ω - 4.5A - TO-220 PowerMESH MOSFET TYPE V DSS R DS(on) I D 500 V < 1.5 Ω 4.5 A TYPICAL R DS(on) = 1.35 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC
STPS2045CT/CF/CG/CFP/CR
STPS245CT/CF/CG/CFP/CR MAIN PRODUCT CHARACTERISTICS I F(AV) 2x1A V RRM 45 V Tj (max) 175 C V F (max).57 V FEATURES AND BENEFITS VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES EXTREMELY FAST SWITCHING
STTH6003TV/CW HIGH FREQUENCY SECONDARY RECTIFIER MAJOR PRODUCT CHARACTERISTICS. 2 x 30 A 300 V Tj (max) 175 C V F (max)
STTH63TV/CW MAJOR PRODUCT CHARACTERISTICS HIGH FREQUENCY SECONDARY RECTIFIER IF(AV) VRRM 2 x 3 A 3 V Tj (max) 175 C V F (max) 1 V K1 K1 K2 K trr (max) 55 ns FEATURES AND BENEFITS COMBINES HIGHEST RECOVERY
STW9NB80. N-CHANNEL 800V Ω - 9.3A - TO-247 PowerMESH MOSFET
STW9NB80 N-CHANNEL 800V - 0.85Ω - 9.3A - TO-247 PowerMESH MOSFET TYPE V DSS R DS(on) I D STW9NB80 800 V < 1 Ω 9.3 A TYPICAL RDS(on) = 0.85 Ω EXTREMELY HIGH dv/dt CAPABILITY ± 30V GATE TO SOURCE VOLTAGE
9.5 A 6.4 A. Symbol Parameter Value Unit
STW9NA60 STH9NA60FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE V DSS R DS(on) I D STW9NA60 STH9NA60FI 600 V 600 V
TN1625 TYN616, TYN816
TN1625 TYN616, TYN816 16 standard SCRs Features I T(RMS) =16 V DRM /V RRM = 600 to 00 V I GT = 25 m G K Description The standard TN16 / TYNx16 16 SCRs series is suitable for general purpose applications.
Symbol Parameter Conditions Ratings Unit. 600 V Sine wave, 50/60Hz, Gate open V RRM Repetitive Peak Reverse Voltage 600 V I T(AV)
3 Quadrants Standard TRIAC V DRM = 6V I T(RMS) = 4 A I TSM = 4 A I GT = 5mA FEATURES Repetitive Peak Off-State Voltage : 6V R.M.S On State Current (I T(RMS) = 4A) Gate Trigger Current : 5mA High commutation
BYT30G-400 HIGH EFFICIENCY FAST RECOVERY DIODES MAIN PRODUCT CHARACTERISTICS IF(AV) VRRM 30 A 400 V 1.4 V
BY3G-4 HIGH EFFICIENCY FAS RECOVERY DIODES MAIN PRODUC CHARACERISICS IF(AV) VRRM trr VF 3 A 4 V 5 ns 1.4 V 1 & 3 4 4 FEAURES AND BENEFIS VERY LOW REVERSE RECOVERY IME VERY LOW SWICHING LOSSES LOW NOISE
STD10NF10 N-CHANNEL 100V Ω - 13A IPAK/DPAK LOW GATE CHARGE STripFET II POWER MOSFET
N-CHANNEL 100V - 0.115 Ω - 13A IPAK/DPAK LOW GATE CHARGE STripFET II POWER MOSFET TYPE V DSS R DS(on) I D STD10NF10 100 V
STPS20120D POWER SCHOTTKY RECTIFIER. Table 1: Main Product Characteristics I F(AV) 20 A V RRM. 120 V T j (max) 175 C V F (typ) 0.
STPS22D POWER SCHOTTKY RECTIFIER Table : Main Product Characteristics I F(AV) 2 A V RRM 2 V T j (max) 75 C V F (typ).54 V FEATURES AND BENEFITS High junction temperature capability Avalanche rated Low
P0102AL. Sensitive high immunity 0.25 A SCR Thyristor. Description. Features. Applications
Sensitive high immunity 0.25 A SCR Thyristor Datasheet - production data Features IT(RMS) 0.25 A Low 200 µa gate current High noise immunity 200 V/µs ECOPACK 2 compliant component Description Thanks to
STTH6003TV/CW HIGH FREQUENCY SECONDARY RECTIFIER MAJOR PRODUCT CHARACTERISTICS. 2 x 30 A 300 V FEATURES AND BENEFITS
STTH63TV/CW MAJOR PRODUCT CHARACTERISTICS HIGH FREQUENCY SECONDARY RECTIFIER IF(AV) VRRM VF (max) trr (max) 2 x 3 A 3 V 1 V 55 ns K1 K1 K2 K FEATURES AND BENEFITS COMBINES HIGHEST RECOVERY AND VOLTAGE
LCP1511D PROGRAMMABLE TRANSIENT VOLTAGE SUPPRESSOR FOR SLIC PROTECTION. Application Specific Discretes A.S.D. TIP TIP GATE GND GND RING FEATURES SO-8
Application Specific Discretes A.S.D. LCP111D PROGRAMMABLE TRANSIENT VOLTAGE SUPPRESSOR FOR SLIC PROTECTION FEATURES n DUAL PROGRAMMABLE TRANSIENT SUP- PRESSOR. n WIDE NEGATIVE FI VOLTAGE RANGE : V MGL
- 65 to TL Maximum lead temperature for soldering during 10 s. 260 C
SMAJ5.0A-TR,CA-TR SMAJ188A-TR,CA-TR TRANSIL TM FEATURES PEAK PULSE POWER : 400 W (10/0µs) STAND OFF VOLTAGE RANGE : From 5V to 188V. UNI AND BIDIRECTIONAL TYPES LOW CLAMPING FACTOR FAST RESPONSE TIME JEDEC
TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIER
STTH22TV TURBO 2 ULTRAAST HIGH VOLTAGE RECTIIER MAIN PRODUCT CHARACTERISTICS I (AV) Up to 2 x 12 A V RRM 2 V T j 15 C V (typ).75 V t rr (typ) 41 ns EATURES AND BENEITS Suited for SMPS Very Low orward Losses
TPP OVERVOLTAGE and OVERCURRENT PROTECTION for TELECOM LINE. Application Specific Discretes A.S.D.
Application Specific Discretes A.S.D. OVERVOLTAGE and OVERCURRENT PROTECTION for TELECOM LINE FEATURES UNIDIRECTIONAL FUNCTION PROGRAMMABLE BREAKDOWN VOLTAGE UP TO 250 V PROGRAMMABLE CURRENT LIMITATION
Symbol Parameter Value Unit V RRM Repetitive peak reverse voltage 20 V I F(RMS) RMS forward current 2 A I F(AV) Average forward current
SPS0520Z SCHOKY RECIFIERS MAIN PRODUC CHARACERISICS I F(AV) V RRM V F (max) A 20 V 0.32 V FEAURES AND BENEFIS VERY SMALL CONDUCION LOSSES NEGLIGIBLE SWICHING LOSSES EXREMELY FAS SWICHING DESCRIPION Single
TN5015H-6G. High temperature 50 A SCRs. Description. Features. Applications
TN515H-6G High temperature 5 SCRs Datasheet - production data Features G K K G D²PK High junction temperature: Tj = 15 C High noise immunity dv/dt = 5 V/µs up to 15 C Gate triggering current IGT = 15 m
t p = 10 ms T j initial = T amb
P6KE TRANSIL FEATURES Peak pulse power: 600 W (/0 µs ) Stand-off voltage range 6.8 to 440V Unidirectional and Bidirectional types Low clamping factor Fast response time UL recognized DESCRIPTION Transil