TN1625 TYN616, TYN816

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1 TN1625 TYN616, TYN standard SCRs Features I T(RMS) =16 V DRM /V RRM = 600 to 00 V I GT = 25 m G K Description The standard TN16 / TYNx16 16 SCRs series is suitable for general purpose applications. Using clip assembly technology, they provide a superior performance in surge current capabilities. K G K G D 2 PK (TN1625-x00G) TO-220B (TYNx16RG) Table 1. Device summary Parameter TN G TYN616RG TYN816RG TN G Unit V DRM /V RRM V Sensitivity m November 2007 Rev 6 1/9 9

2 Characteristics TN1625, TYN616, TYN816 1 Characteristics Table 2. bsolute ratings (limiting values) Symbol Parameter Value Unit I T(RMS) RMS on-state current (180 Conduction angle) T c = 1 C 16 I T(V) verage on-state current (180 Conduction angle) T c = 1 C I TSM Non repetitive surge peak on-state current t p = 8.3 ms 200 T j = 25 C t p = ms 190 I 2 t I 2 t Value for fusing t p = ms T j = 25 C S di/dt Critical rate of rise of on-state current I G = 2 x I GT, t r 0 ns F = 60 Hz T j = 125 C 50 /µs I GM Peak gate current t p = 20 µs T j = 125 C 4 P G(V) verage gate power dissipation T j = 125 C 1 W T stg T j Storage junction temperature range Operating junction temperature range - 40 to to V RGM Maximum peak reverse gate voltage 5 V Table 3. Electrical characteristics (T j = 25 C, unless otherwise specified) Symbol Test Conditions Value Unit I GT MIN. 2 V D = 12 V R L = 33 Ω MX. 25 m V GT MX. 1.3 V V GD V D = V DRM R L = 3.3 kω T j = 125 C MIN. 0.2 V I H I T = 500 m Gate open MX. 40 m I L I G = 1.2 x I GT MX. 60 m dv/dt V D = 67 % V DRM Gate open T j = 125 C MIN. 500 V/µs V TM I TM = 32 t p = 380 µs T j = 25 C MX. 1.6 V V t0 Threshold voltage T j = 125 C MX V R d Dynamic resistance T j = 125 C MX. 23 mω I DRM T j = 25 C 5 µ V I DRM = V RRM MX. RRM T j = 125 C 2 m Table 4. Thermal resistance Symbol Parameter Value Unit R th(j-c) Junction to case (DC) 1.1 C/W C R th(j-a) Junction to ambient (DC) S = 01 cm 2 D 2 PK 45 TO-220B 60 C/W S = copper surface under tab 2/9

3 TN1625, TYN616, TYN816 Characteristics Figure 1. Maximum average power dissipation versus average on-state current Figure 2. verage and D.C. on-state current versus case temperature P(W) α = I T(V) () D.C α = I T(V) () α T case( C) Figure 3. verage and D.C. on-state current versus ambient temperature (copper surface under tab: S=1cm 2 ) (D 2 PK) Figure 4. Relative variation of thermal impedance versus pulse duration 4.0 I T(V) () 1.00 K=[Z th/rth] 3.5 Zth(j-c) D.C. 2.0 α = Zth(j-a) T amb( C) t p(s) E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2 Figure 5. Relative variation of gate trigger current, holding current and latching current versus junction temperature Figure 6. Surge peak on-state current versus number of cycles I GT,I H,I L[T] j / I GT,I H,I L[T j=25 C] IH & IL IGT 0.5 T j( C) I TSM() Repetitive T C=1 C Non repetitive Tj initial=25 C Number of cycles t p=ms One cycle /9

4 Characteristics TN1625, TYN616, TYN816 Figure 7. Non-repetitive surge peak on-state current for a sinusoidal pulse with width t p < ms, and corresponding values of I 2 t Figure 8. On-state characteristics (maximum values) I TSM(), I t ( s) ITSM Tj initial = 25 C I TM() Tj max.: V t0=0.77v R d=23mω di/dt limitation 2 I t Tj=max 0 T j=25 C t p(ms) V TM(V) Figure 9. Thermal resistance junction to ambient versus copper surface under tab (epoxy printed circuit board FR4, copper thickness: 35 µm) (D 2 PK) 80 R th(j-a) ( C/W) S(cm²) /9

5 TN1625, TYN616, TYN816 Ordering information scheme 2 Ordering information scheme Figure. TN1625 TN G (-TR) Standard SCR series Current 16 = 16 Sensitivity 25 = 25 m Voltage 600 = 600 V 00 = 00 V Package G = D 2 PK Packing mode Blank = Tube -TR = Tape and reel Figure 11. TYNx16 TYN 6 16 RG Standard SCR series Voltage 6 = 600 V 8 = 800 V Current 16 = 16 Packing mode RG = Tube 5/9

6 Package information TN1625, TYN616, TYN816 3 Package information Epoxy meets UL94,V0 Cooling method: C Recommended torque value: N m In order to meet environmental requirements, ST offers these devices in ECOPCK packages. These packages have a lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPCK is an ST trademark. ECOPCK specifications are available at: Table 5. TO-220B dimensions Ref. Millimeters Dimensions Inches Min. Typ. Max. Min. Typ. Max a B Ø I L b2 C F a B b b I4 l3 l2 a1 a2 c2 C c c e e b1 M c1 F ØI I L l l M /9

7 TN1625, TYN616, TYN816 Package information Table 6. D 2 PK dimensions Dimensions Ref. Millimeters Inches Min. Typ. Max. Min. Typ. Max L2 E C B L D B L3 B2 B 1 C R C C D G E mm min. FLT ZONE 2 G L V2 L L R V Figure 12. Footprint (dimensions in mm) /9

8 Ordering information TN1625, TYN616, TYN816 4 Ordering information Table 7. Ordering information Order code (1) Marking (1) Package Weight Base qty Delivery mode TN1625-x00G TN1625x00G D 2 PK 1.5 g 50 Tube TN1625-x00G-TR TN1625x00G D 2 PK 1.5 g 00 Tape and reel TYNx16RG TYNx16 TO-220B 2.3 g 50 Tube 1. x indicates votage, 6, 8 or for 600, 800 and 00 V respectively 5 Revision history Table 8. Document revision history Date Revision Changes pr Last update. 13-Feb Nov TO-220B delivery mode changed from bulk to tube. ECOPCK statement added. Reformatted to current standards. Table 2.: I T(RMS) value corrected from 12 to 16 8/9

9 TN1625, TYN616, TYN816 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ( ST ) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. ll ST products are sold pursuant to ST s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST S TERMS ND CONDITIONS OF SLE ST DISCLIMS NY EXPRESS OR IMPLIED WRRNTY WITH RESPECT TO THE USE ND/OR SLE OF ST PRODUCTS INCLUDING WITHOUT LIMITTION IMPLIED WRRNTIES OF MERCHNTBILITY, FITNESS FOR PRTICULR PURPOSE (ND THEIR EQUIVLENTS UNDER THE LWS OF NY JURISDICTION), OR INFRINGEMENT OF NY PTENT, COPYRIGHT OR OTHER INTELLECTUL PROPERTY RIGHT. UNLESS EXPRESSLY PPROVED IN WRITING BY N UTHORIZED ST REPRESENTTIVE, ST PRODUCTS RE NOT RECOMMENDED, UTHORIZED OR WRRNTED FOR USE IN MILITRY, IR CRFT, SPCE, LIFE SVING, OR LIFE SUSTINING PPLICTIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FILURE OR MLFUNCTION MY RESULT IN PERSONL INJURY, DETH, OR SEVERE PROPERTY OR ENVIRONMENTL DMGE. ST PRODUCTS WHICH RE NOT SPECIFIED S "UTOMOTIVE GRDE" MY ONLY BE USED IN UTOMOTIVE PPLICTIONS T USER S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. ll other names are the property of their respective owners STMicroelectronics - ll rights reserved STMicroelectronics group of companies ustralia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of merica 9/9

X A sensitive gate SCR. Features. Applications. Description I T(RMS) = 0.8 A V DRM, V RRM = 600 V. I GT 30 to 200 µa

X A sensitive gate SCR. Features. Applications. Description I T(RMS) = 0.8 A V DRM, V RRM = 600 V. I GT 30 to 200 µa 0.8 sensitive gate SCR Datasheet production data Features I T(RMS) = 0.8 V DRM, V RRM = 600 V I GT = 30 to 200 µ pplications Limited gate current topologies Ground fault circuit interrupters Overvoltage