TN805, TN815, TS820, TYN608

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1 Sensitive and standard 8 SCRs Datasheet - production data K G Features TO-220B IPK K On-state rms current, I T(RMS) 8 Repetitive peak off-state voltage, V DRM /V RRM 600 and 800 V Triggering gate current, I GT 0.2 to 15 m G G K K K G G TO-220FPB DPK TO-220B G K Description vailable either in sensitive (TS8) or standard (TN8 / TYN) gate triggering levels, the 8 SCR series is suitable to fit all modes of control found in applications such as overvoltage crowbar protection, motor control circuits in power tools and kitchen aids, inrush current limiting circuits, capacitive discharge ignition and voltage regulation circuits. vailable in through-hole or surface-mount packages, they provide an optimized performance in a limited space. Order code Table 1. Device summary Voltage (x00) V DRM /V RRM Sensitivity Package I GT 600 V 800 V TS B X 0.2 m DPK TS H X 0.2 m IPK TS T X 0.2 m TS FP X 0.2 m TO- 220B TO- 220FP B TN B X 5 m DPK TN815-x00B X X 15 m DPK TYN608RG X 15 m TO- 220B May 2014 DocID7476 Rev 8 1/17 This is information on a product in full production.

2 Characteristics TN805, TN815, TS820, TYN608 1 Characteristics Table 2. bsolute ratings (limiting values) Value Symbol Parameter TN805 TN815 TS820 TYN608 Unit I T(RMS) I T(V) I TSM On-state rms current (180 conduction angle) verage on-state current (180 conduction angle) Non repetitive surge peak on-state current T c = 110 C T0-220FPB, T c = 91 C T c = 110 C T0-220FPB, T c = 91 C 8 5 t p = 8.3 ms T j = 25 C t p = 10 ms I 2 t I 2 t value for fusing t p = 10 ms T j = 25 C S di/dt Critical rate of rise of on-state current I G = 2 x I GT, t r 100 ns F = 60 Hz T j = 125 C 50 /µs I GM Peak gate current t p = 20 µs T j = 125 C 4 P G(V) verage gate power dissipation T j = 125 C 1 W T stg T j Storage junction temperature range Operating junction temperature range - 40 to to V RGM Maximum peak reverse gate voltage (for TN8x5 and TYN608 only) 5 V C Table 3. Sensitive electrical characteristics (T j = 25 C, unless otherwise specified) Symbol Test conditions TS820 Unit I GT MX. 200 µ V D = 12 V, R L = 140 Ω V GT MX. 0.8 V V GD V D = V DRM, R L = 3.3 kω, R GK = 220 Ω T j = 125 C MIN. 0.1 V V RG I RG = 10 µ MIN. 8 V I H I T = 50 m, R GK = 1 kω MX. 5 m I L I G = 1 m,, R GK = 1 kω MX. 6 m dv/dt V D = 65% V DRM, R GK = 220 Ω T j = 125 C MIN. 5 V/µs V TM I TM = 16, t p = 380 µs T j = 25 C MX. 1.6 V V t0 Threshold voltage T j = 125 C MX V R d Dynamic resistance T j = 125 C MX. 46 mω I DRM T j = 25 C 5 µ V I DRM = V RRM, R GK = 220 Ω MX. RRM T j = 125 C 1 m 2/17 DocID7476 Rev 8

3 Characteristics Table 4. Standard electrical characteristics (T j = 25 C, unless otherwise specified) Symbol Test conditions TN805 TN815 TYN608 Unit I GT MIN V D = 12 V, R L = 33 Ω MX m V GT MX. 1.3 V V GD V D = V DRM, R L = 3.3 kω T j = 125 C MIN. 0.2 V I H I T = 100 m, gate open MX m I L I G = 1.2 I GT MX m dv/dt V D = 67% V DRM, gate open T j =125 C MIN V/µs V TM I TM = 16 t p = 380 µs T j = 25 C MX. 1.6 V V t0 Threshold voltage T j = 125 C MX V R d Dynamic resistance T j = 125 C MX. 46 mω I DRM T j = 25 C 5 µ V I DRM = V RRM MX. RRM T j = 125 C 2 m Table 5. Thermal resistance Symbol Parameter Value Unit R th(j-c) Junction to case (DC) DPK, IPK, TO-220B 1.3 TO-220FPB 4.6 C/W S (1) = 0.5 cm 2 DPK 70 R th(j-a) Junction to ambient (DC) IPK 100 C/W TO-220B, TO-220FPB S = Copper surface under tab Figure 1. Maximum average power dissipation versus average on-state current P(W) α = α I T(V) () Figure 2. verage and DC on-state current versus case temperature I T(V) () D.C. α = 180 TO-220FPB T case( C) DPK IPK TO-220B DocID7476 Rev 8 3/17 17

4 Characteristics TN805, TN815, TS820, TYN608 2,0 Figure 3. verage and DC on-state current versus ambient temperature I T(V) () 2,5 D.C. α = 180 Recommended pad layout, FR4 printed circuit board 1.0 Figure 4. Relative variation of thermal impedance junction to case versus pulse duration K=[Z th(j-c) /Rth(j-c)] 1,5 TO-220B TO-220FPB 0.5 1,0 0,5 0,0 DPK IPK T amb( C) t p(s) 0.1 1E-3 1E-2 1E-1 1E+0 Figure 5. Relative variation of thermal impedance junction to ambient versus pulse duration K=[Z th(j-a) /Rth(j-a)] Recommended pad layout, FR4 printed circuit board DPK TO-220B / IPK TO-220FPB t p(s) E-2 1E-1 1E+0 1E+1 1E+2 5E+2 Figure 7. Relative variation of gate trigger and holding current versus junction temperature I GT,I H,I L[T] j / I GT,I H,I L[T j=25 C] TN8 and TYNx8 IGT IH & IL T j( C) Figure 6. Relative variation of gate trigger current and holding current versus junction temperature for TS I GT,I H,I L[T] j / I GT,I H,I L[T j=25 C] IGT IH & IL R GK = 1kΩ T ( C) j Figure 8. Relative variation of holding current versus gate-cathode resistance (typical values) GK I H[R GK] / I H[ R =1k Ω] TS8 Tj = 25 C R GK(k Ω) 0.0 1E-2 1E-1 1E+0 1E+1 4/17 DocID7476 Rev 8

5 Characteristics Figure 9. Relative variation of dv/dt immunity versus gate-cathode resistance (typical values) for TS dv/dt[r GK] / dv/dt[ R GK =220 Ω] Tj = 125 C V D = 0.67 x VDRM Figure 10. Relative variation of dv/dt immunity versus gate-cathode capacitance (typical values) for TS dv/dt[c GK] / dv/dt[ R GK =220 Ω] V D = 0.67 x VDRM Tj = 125 C R GK = 220Ω R GK(k Ω) C GK(nF) Figure 11. Surge peak on-state current versus number of cycles I TSM() TN8 / TS8 TYN08 Repetitive T C=110 C Non repetitive Tj initial=25 C Number of cycles t p=10ms One cycle Figure 13. On-state characteristics (maximum values) I TM() Tj max.: V t0=0.85v R d=46mω Tj=max Figure 12. Non-repetitive surge peak on-state current and corresponding values of I 2 t I TSM(), I t ( s) di/dt limitation Sinusoidal pulse width tp < 10 ms TN8 / TS8 t p(ms) I t ITSM TN8 / TS8 Tj initial = 25 C TYN08 TYN08 Figure 14. Thermal resistance junction to ambient versus copper surface under tab (DPK) R th(j-a) ( C/W) Epoxy printed circuit board FR4 copper thickness = 35 µm 1.0 T j=25 C 40 V TM(V) S(cm²) DocID7476 Rev 8 5/17 17

6 Package information TN805, TN815, TS820, TYN608 2 Package information Epoxy meets UL94, V0 Lead-free packages Recommended torque: 0.4 to 0.6 N m In order to meet environmental requirements, ST offers these devices in different grades of ECOPCK packages, depending on their level of environmental compliance. ECOPCK specifications, grade definitions and product status are available at: ECOPCK is an ST trademark. Figure 15. DPK dimension definitions E b4 c2 E1 L2 D1 D H L4 D 1 E1 e1 b c 2 V2 L Note: this package drawing may slightly differ from the physical package. However, all the specified dimensions are guaranteed. 6/17 DocID7476 Rev 8

7 Package information Ref. Table 6. DPK dimension values Millimeters Dimensions Inches Min. Typ. Max. Min. Typ. Max b b c c D D E E e H L L L V Figure 16. Footprint (dimensions in mm) The device must be positioned within B 0.05 B 1.6 DocID7476 Rev 8 7/17 17

8 Package information TN805, TN815, TS820, TYN608 Figure 17. IPK dimension definitions L2 E b4 V1 c ±0.010 Top E-MRK D L1 e b2 L 1 H e1 b c Note: this package drawing may slightly differ from the physical package. However, all the specified dimensions are guaranteed. Ref. Table 7. IPK dimension values Millimeters Dimensions Inches Min. Typ. Max. Min. Typ. Max b b b c c D E e e H L L /17 DocID7476 Rev 8

9 Package information Table 7. IPK dimension values L V Figure 18. TO-220B dimension definitions E Resin gate 0.5 mm max. protrusion (1) P Q F H1 D D1 L20 L30 b1 L1 J1 b L e Resin gate 0.5 mm max. protrusion e1 (1) (1) Resin gate position accepted in each of the two position shown as well as the symmetrical opposites c DocID7476 Rev 8 9/17 17

10 Package information TN805, TN815, TS820, TYN608 Ref. Table 8. TO-220B dimension values Millimeters Dimensions Inches Min. Max. Min. Max b b c D D typ typ. E e e F H J L L L typ typ. L typ typ. P Q /17 DocID7476 Rev 8

11 Package information Figure 19. TO-220B (NIns. & Ins. 20-up) dimension definitions B C Ø I b2 L F I4 l3 a1 c2 l2 a2 e b1 M c1 DocID7476 Rev 8 11/17 17

12 Package information TN805, TN815, TS820, TYN608 Table 9. TO-220B (NIns. & Ins. 20-up) dimension values Dimensions Ref. Millimeters Inches Min. Typ. Max. Min. Typ. Max a a B b b C c c e F ØI I L l l M /17 DocID7476 Rev 8

13 Package information Figure 20. TO-220FPB dimension definitions H B Dia L6 L2 L7 L3 L5 F1 D L4 F2 G1 F E G DocID7476 Rev 8 13/17 17

14 Package information TN805, TN815, TS820, TYN608 Ref. Table 10. TO-220FPB dimension values Millimeters Dimensions Inches Min. Typ. Max. Min. Typ. Max B D E F F F G G H L L L L L L Dia /17 DocID7476 Rev 8

15 Ordering information 3 Ordering information Standard SCR series Current 8 = 8 Sensitivity 05 = 5 m 15 = 15 m Voltage 600 = 600 V 800 = 800 V Package B = DPK Packing mode -TR = Tape and reel Figure 21. TN8 series TN B -TR Figure 22. TS8 series TS B (-TR) Sensitive SCR series Current 8 = 8 Sensitivity 20 = 200 µ Voltage 600 = 600 V Package B = DPK H = IPK T = TO-220B FP = TO220FPB Packing mode Blank = Tube -TR = Tape and reel Figure 23. TYNx08 series TYN 6 08 RG Standard SCR series Voltage 6 = 600 V Current 8 = 8 Packing mode RG = Tube DocID7476 Rev 8 15/17 17

16 Revision history TN805, TN815, TS820, TYN608 Table 11. Ordering information Order code Marking Package Weight Base qty Delivery mode TN B-TR TN DPK 0.3 g 2500 Tape and reel TN B-TR TN DPK 0.3 g 2500 Tape and reel TN B-TR TN DPK 0.3 g 2500 Tape and reel TS B TS DPK 0.3 g 75 Tube TS B-TR TS DPK 0.3 g 2500 Tape and reel TS H TS IPK 0.4 g 75 Tube TS T TS820600T TO-220B 2.3 g 50 Tube TS FP TS TO-220FPB 2.0 g 50 Tube TYN608RG TYN608 TO-220B 2.3 g 50 Tube 4 Revision history Table 12. Document revision history Date Revision Changes pr Last update. 13-Feb Jan Oct May TO-220B delivery mode changed from bulk to tube. ECOPCK statement added. lpha definition updated in Figure 1. Thermal resistance, junction to case, updated in Table 5. dded TO-220FPB package. Removed 700 V and 1000 V products. Updated DPK and IPK package information and reformatted to current standard. 16/17 DocID7476 Rev 8

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TN1625 TYN616, TYN816

TN1625 TYN616, TYN816 16 standard SCRs Features I T(RMS) =16 V DRM /V RRM = 600 to 00 V I GT = 25 m G K Description The standard TN16 / TYNx16 16 SCRs series is suitable for general purpose applications.